Si1011X Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) (cid:129) Typical ESD protection: 700 V (HBM) 0.640 at VGS = - 4.5 V - 0.48 (cid:129) Fast Switching Speed 0.880 at VGS = - 2.5 V - 0.41 (cid:129) Material categorization: For definitions of compliance please see - 12 1.200 at VGS = - 1.8 V - 0.35 1.15 nC www.vishay.com/doc?99912 1.443 at VGS = - 1.5 V - 0.10 2.475 at VGS = - 1.2 V - 0.05 APPLICATIONS (cid:129) Portable Devices such as Smart Phones, Tablet PCs and Mobile Computing - Load Switch for Low Voltage Gate Drive - Load Switch for 1.2 V Power Line SC-89 (3-LEADS) S G 1 Marking Code K XXY Y 3 D Lot Traceability and Date Code G Part # Code S 2 Top View D Ordering Information: Si1011X-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS - 12 V Gate-Source Voltage VGS ± 5 TA = 25 °C - 0.48b, c Continuous Drain Current (T = 150 °C) I J D TA = 70 °C - 0.38b, c A Pulsed Drain Current (t = 300 µs) IDM - 1.5 Continuous Source-Drain Diode Current TA = 25 °C IS - 0.16b, c TA = 25 °C 0.19b, c Maximum Power Dissipation PD W TA = 70 °C 0.12b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s 440 530 Maximum Junction-to-Ambienta, b RthJA °C/W Steady State 540 650 Notes: a. Maximum under steady state conditions is 650 °C/W. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. Document Number: 62660 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S12-2732-Rev. B, 12-Nov-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si1011X Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = - 250 µA - 12 V VDS Temperature Coefficient VDS/TJ - 7 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ 1.7 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.35 - 0.8 V VDS = 0 V, VGS = ± 5 V ± 10 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 1 µA VDS = - 12 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V, TJ = 85 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 4.5 V - 1.5 A VGS = - 4.5 V, ID = - 0.4 A 0.530 0.640 VGS = - 2.5 V, ID = - 0.2 A 0.730 0.880 Drain-Source On-State Resistancea RDS(on) VGS = - 1.8 V, ID = - 0.1 A 0.920 1.200  VGS = - 1.5 V, ID = - 0.05 A 1.100 1.443 VGS = - 1.2 V, ID = - 0.05 A 1.650 2.475 Forward Transconductance gfs VDS = - 6 V, ID = - 0.4 A 1 S Dynamicb Input Capacitance Ciss 62 Output Capacitance Coss VDS = - 6 V, VGS = 0 V, f = 1 MHz 26 pF Reverse Transfer Capacitance Crss 20 Total Gate Charge Qg VDS = - 6 V, VGS = - 4.5 V, ID = - 0.4 A 2 4 1.15 2 nC Gate-Source Charge Qgs VDS = - 6 V, VGS = - 2.5 V, ID = - 0.4 A 0.37 Gate-Drain Charge Qgd 0.43 Gate Resistance Rg f = 1 MHz 12  Turn-On Delay Time td(on) 4 8 Rise Time tr VDD = - 6 V, RL = 20  11 20 ns Turn-Off DelayTime td(off) ID  - 0.3 A, VGEN = - 5 V, Rg = 1  9 18 Fall Time tf 9 18 Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM - 1.5 A Body Diode Voltage VSD IS = - 0.3 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr 12 20 ns Body Diode Reverse Recovery Charge Qrr 5 10 nC I = - 0.3 A, dI/dt = 100 A/µs F Reverse Recovery Fall Time ta 7 ns Reverse Recovery Rise Time tb 5 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 62660 2 S12-2732-Rev. B, 12-Nov-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si1011X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 0.004 10-4 T = 25 °C J mA) 0.003 A) 10-5 Current ( 0.002 Current ( 10-6 TJ = 150 °C - Gate IGSS 0.001 I - Gate GSS 10-7 TJ = 25 °C 0.000 10-8 0 2 4 6 8 10 0 2 4 6 8 10 VGS - Gate-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 1.5 0.2 V = 5 V thru 2.5 V GS 1.2 Drain Current (A) 00..69 VGS = 2 V Drain Current (A) 0.01.51 TC= 25 °C I - D VGS = 1.5 V I - D 0.05 0.3 T = 125 °C C T = - 55 °C V = 1 V C GS 0 0 0 0.4 0.8 1.2 1.6 0 0.5 1 1.5 2 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) GS DS Output Characteristics Transfer Characteristics 2.5 125 VGS = 1.2 V 2 100 Ω) e ( F) c p Resistan 1.5 VGS = 1.5 V VGS = 1.8 V citance ( 75 Ciss R - On-DS(on)0.51 VVGGSS == 24..55 VV C - Capa 2550 Coss C rss 0 0 0 3 6 9 12 0 0.3 0.6 0.9 1.2 1.5 V - Drain-to-Source Voltage (V) I - Drain Current (A) DS D On-Resistance vs. Drain Current Capacitance Document Number: 62660 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S12-2732-Rev. B, 12-Nov-12 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si1011X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 5 1.3 V = 2.5 V GS ID = 0.5 A ID = 0.5 A e Voltage (V) 34 VDS = 6 V (Normalized)e 11..12 VGS= 4.5 V c c Sour VDS= 3 V stan Gate-to- 2 VDS = 9.6 V On-Resi 1.0 V - GS 1 - DS(on) 0.9 R 0 0.8 0 0.55 1.1 1.65 2.2 - 50 - 25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J Gate Charge On-Resistance vs. Junction Temperature 10 1.5 I = 0.5 A D ent (A) TJ = 150 °C ance (Ω) 1.2 e Curr 1 Resist 0.9 urc On- I - SoS T = 25 °C R - DS(on) 0.6 TJ = 125 °C J T = 25 °C J 0.1 0.3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 2 3 4 5 V - Source-to-Drain Voltage (V) V - Gate-to-Source Voltage (V) SD GS Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.75 10 I = 250 μA D 8 0.65 V) W) 6 V (GS(th) 0.55 Power ( 4 0.45 2 0.35 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 62660 4 S12-2732-Rev. B, 12-Nov-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si1011X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 10 0.25 Limited by R * DS(on) 0.2 Drain Current (A) 1 110 m mss Power (W) 0.01.51 I - D0.1 100 ms 0.05 1 s T = 25 °C A DC, 10 s Single Pulse BVDSS Limited 0.01 0 0.1 1 10 100 0 25 50 75 100 125 150 VDS - Drain-to-Source Voltage (V) T - Ambient Temperature (°C) * V > minimum V at which R is specified A GS GS DS(on) Safe Operating Area, Junction-to-Ambient Power Derating, Junction-to-Ambient 1 Duty Cycle = 0.5 nt e si Trannce 0.2 e da ectivmpe 0.1 0.1 alized EffThermal I 0.05 m or 0.02 N Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62660. Document Number: 62660 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S12-2732-Rev. B, 12-Nov-12 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information Vishay Siliconix (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6) X E D A C H L 3 DETAIL X (cid:7)(cid:8)(cid:9)(cid:9)(cid:8)(cid:7)(cid:10)(cid:11)(cid:10)(cid:12)(cid:1) (cid:8)(cid:13)(cid:2)(cid:14)(cid:10)(cid:1) Dim Min Max Min Max A 0.60 0.80 0.024 0.031 b 0.23 0.33 0.009 0.013 C 0.10 0.20 0.004 0.008 1 2 D 1.50 1.70 0.059 0.067 E 0.75 0.95 0.030 0.037 e 1.00 BSC 0.040 BSC e1 b e1 0.50 BSC 0.020 BSC e H 1.50 1.70 0.059 0.067 L 0.30 0.50 0.012 0.020 ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5869 Document Number: 71377 www.vishay.com 06-Jul-01 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 3-Lead RECOMMENDED MINIMUM PADS FOR SC-89: 3-LEAD 0.0200 0.0150 (0.51) (0.38) ) ) 0690 )1.75) 0170 )0.43) 0. ( 0. ( 0260 )0.66) 0. ( 0.0250 0.0150 (0.64) (0.38) ) ) 0.0550 (1.40) ) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72604 20 Revision: 21-Jan-08

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