4V Drive Nch+Nch MOSFET SH8K4 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) (8) (7) (6) (5) Type Code TB Basic ordering unit (pieces) 2500 SH8K4 ∗2 ∗2 (1) (2) (3) (4) (1) Tr1 Source Absolute maximum ratings (Ta=25C) ∗1 ∗1 (2) Tr1 Gate (3) Tr2 Source <It is the same ratings for the Tr1 and Tr2.> (4) Tr2 Gate (5) Tr2 Drain Parameter Symbol Limits Unit (1) (2) (3) (4) (6) Tr2 Drain Drain-source voltage VDSS 30 V ∗1 ESD PROTECTION DIODE (7) Tr1 Drain Gate-source voltage VGSS ±20 V ∗A∗ 2p rBoOteDcYtio Dn IdOioDdEe is included between the (g8a) tTer 1a nDdrain Continuous ID ±9.0 A the source terminals to protect the diode against static Drain current Pulsed IDP ∗1 ±36 A ecilreccutirti cwithy ewnh tehne tfhixee pdr voodlutacgt eiss ina rues eex. cUeseed ethde. protection Source current Continuous IS 1.6 A (Body diode) Pulsed ISP ∗1 6.4 A Total power dissipation PD ∗2 2 W Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Pw 10μs, Duty cycle 1% ∗2 MOUNTED ON A CERAMIC BOARD. Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a)∗ 62.5 °C / W ∗MOUNTED ON A CERAMIC BOARD. www.rohm.com 1/3 2009.12 - Rev.A ○c 2009 ROHM Co., Ltd. All rights reserved.

SH8K4 Data Sheet Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 μA VGS=±20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 − − V ID=1mA, VGS=0V Zero gate voltage drain current IDSS − − 1 μA VDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 − 2.5 V VDS=10V, ID=1mA − 12 17 ID=9.0A, VGS=10V Sretsaitsicta dnrcaein-source on-state RDS (on∗) − 16 23 mΩ ID=9.0A, VGS=4.5V − 17 24 ID=9.0A, VGS=4V Forward transfer admittance Yfs ∗ 7.0 − − S ID=9.0A, VDS=10V Input capacitance Ciss − 1190 − pF VDS=10V Output capacitance Coss − 340 − pF VGS=0V Reverse transfer capacitance Crss − 190 − pF f=1MHz Turn-on delay time td (on)∗ − 10 − ns ID=4.5A, VDD 15V Rise time tr ∗ − 15 − ns VGS=10V Turn-off delay time td (off)∗ − 55 − ns RL=3.33Ω Fall time tf ∗ − 22 − ns RG =10Ω Total gate charge Qg ∗ − 15 21 nC VDD 15V Gate-source charge Qgs ∗ − 3.0 − nC VGS=5V Gate-drain charge Qgd ∗ − 6.1 − nC ID=9.0A ∗Pulsed Body diode characteristics (Source-Drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD∗ − − 1.2 V IS=6.4A, VGS=0V ∗Pulsed www.rohm.com 2/3 2009.12 - Rev.A ○c 2009 ROHM Co., Ltd. All rights reserved.

SH8K4 Data Sheet Electrical characteristic curves 10000 10000 10 Ta=25°C Ta=25°C Ta=25°C CAPACITANCE : C(pF) 1010000 Vf=G1SM=0HCCCVzoirssssss SWITCHING TIME : t(ns) 101100000 ttdd ((tootrffnf)) VVRPDGuGDSl=s==1e110d50ΩVV E-SOURCE VOLTAGE : V(V) GS 23456789 VIRPDDuG=Dl=9s=1Ae10d5ΩV AT 1 G 10 1 0 0.01 0.1 1 10 100 0.01 0.1 1 10 0 5 10 15 20 25 30 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics vs. Drain-Source Voltage N CURRENT : I(A) D 01.110 TTTTaaaa==== 271−5522°°55CC°°CC VPuDSls=e1d0V AIN-SOURCEΩRESISTANCE : R (m)DS (on)112050000 IIDD==94A.5A TPau=ls2e5d°C CE CURRENT : I(A) s 01.110 TTTTaaaa==== 271−5522°°55CC°°CC VPGuSls=e0dV DRAI0.01 TIC DRSTATE 50 SOUR 0.001 STAON- 0 0.01 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14 16 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source Fig.6 Source Current vs. On-State Resistance vs. Source-Drain Voltage Gate-Source Voltage Ωm)1000 VGS=10V Ωm)1000 VGS=4.5V Ωm)1000 VGS=4V RCENCE : R (DS (on) 100 TTTTaaaa==== 271−5522°°55CC°°CC Pulsed RCENCE : R (DS (on) 100 TTTTaaaa==== 271−5522°°55CC°°CC Pulsed RCENCE : R (DS (on) 100 TTTTaaaa==== 271−5522°°55CC°°CC Pulsed AIN-SOURESISTA 10 AIN-SOURESISTA 10 AIN-SOURESISTA 10 TIC DRSTATE TIC DRSTATE TIC DRSTATE STAON- 1 STAON- 1 STAON- 1 0.1 1 10 0.1 1 10 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source Fig.8 Static Drain-Source Fig.9 Static Drain-Source On-State Resistance On-State Resistance On-State Resistance vs. Drain Current (Ι) vs. Drain Current (ΙΙ) vs. Drain Current (ΙΙΙ) www.rohm.com 3/3 2009.12 - Rev.A ○c 2009 ROHM Co., Ltd. All rights reserved.

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