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  • 型号: SFH601-3X009
  • 制造商: Vishay
  • 库位|库存: xxxx|xxxx
  • 要求:
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ICGOO电子元器件商城为您提供SFH601-3X009由Vishay设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SFH601-3X009价格参考¥3.83-¥7.55。VishaySFH601-3X009封装/规格:光隔离器 - 晶体管,光电输出, 光隔离器 有基极的晶体管 输出 5300Vrms 1 通道 6-SMD。您可以下载SFH601-3X009参考资料、Datasheet数据手册功能说明书,资料中有SFH601-3X009 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

隔离器

描述

OPTOISO 5.3KV TRANS W/BASE 6SMD晶体管输出光电耦合器 Phototransistor Out Single CTR>100-200%

产品分类

光隔离器 - 晶体管,光电输出

品牌

Vishay Semiconductor Opto DivisionVishay Semiconductors

产品手册

http://www.vishay.com/doc?83663

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

光耦合器/光电耦合器,晶体管输出光电耦合器,Vishay Semiconductors SFH601-3X009-

数据手册

点击此处下载产品Datasheet点击此处下载产品Datasheet

产品型号

SFH601-3X009SFH601-3X009

Vce饱和值(最大值)

400mV

上升/下降时间(典型值)

3µs, 14µs

产品种类

晶体管输出光电耦合器

供应商器件封装

6-SMD

包装

管件

商标

Vishay Semiconductors

安装类型

表面贴装

封装

Tube

封装/外壳

6-SMD,鸥翼型

封装/箱体

PDIP-6 Gull Wing

工作温度

-55°C ~ 100°C

工厂包装数量

2000

打开/关闭时间(典型值)

4.2µs, 23µs

最大功率耗散

150 mW

最大反向二极管电压

6 V

最大工作温度

+ 100 C

最大正向二极管电压

1.65 V

最大输入二极管电流

60 mA

最大集电极/发射极电压

100 V

最大集电极/发射极饱和电压

0.4 V

最大集电极电流

100 mA

最小工作温度

- 55 C

标准包装

2,000

每芯片的通道数量

1 Channel

电压-正向(Vf)(典型值)

1.25V

电压-输出(最大值)

100V

电压-隔离

5300Vrms

电流-DC正向(If)

60mA

电流-输出/通道

50mA

电流传输比(最大值)

200% @ 10mA

电流传输比(最小值)

100% @ 10mA

电流传递比

200 %

绝缘电压

5300 Vrms

输入类型

DCDC

输出类型

DC有基极的晶体管

输出设备

NPN Phototransistor

通道数

1

配置

1 Channel

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PDF Datasheet 数据手册内容提取

SFH601 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection FEATURES • Isolation test voltage, 5000 V RMS • Low coupling capacitance • High common mode transient immunity • Storage temperature, -55 ° to +150 °C A 1 6 B • Material categorization: for definitions of compliance please se e C 2 5 C www.vishay.com/doc?99912 NC 3 4 E APPLICATIONS • Telecom • Industrial controls • Battery powered equipment • Office machines • Programmable controllers 23030 AGENCY APPROVALS DESIGN SUPPORT TOOLS AVAILABLE • UL 3DD 33D • cUL 3D Models Design Tools Related Documents • DIN EN 60747-5-5 (VDE 0884-5) available with option 1 • CQC DESCRIPTION  The SFH601 has a GaAs infrared emitting diode emitter,  which is optically coupled to a silicon planar phototransistor  detector, and is incorporated in a plastic DIP-6 package.  It features a high current transfer ratio, low couplin g  capacitance, and high isolation voltage.  The coupling device is designed for signal transmissio n between two electrically separated circuits. ORDERING INFORMATION S F H 6 0 1 - # X 0 # # # PART NUMBER CTR PACKAGE OPTION TAPE AND BIN REEL AGENCY CERTIFIED/PACKAGE CTR (%) UL, cUL, CQC 40 to 80 63 to 125 100 to 200 160 to 320 DIP-6 SFH601-1 SFH601-2 SFH601-3 - SMD-6, option 7 SFH601-3X007T SFH601-4X007T SMD-6, option 9 - - SFH601-3X009 - VDE, UL, cUL, CQC 40 to 80 63 to 125 100 to 200 160 to 320 DIP-6, 400 mil, option 6 - SFH601-2X016 SFH601-3X016 - SMD-6, option 7 - - SFH601-3X017T - Note • Additional options may be possible, please contact sales office   Rev. 1.7, 28-Feb-2019 1 Document Number: 83663 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SFH601 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6 V R Forward current I 60 mA F Total power dissipation P 100 mW diss OUTPUT Collector emitter voltage V 100 V CEO Emitter base voltage V 7 V EBO Collector current I 50 mA C Power dissipation P 150 mW diss COUPLER Storage temperature range T -55 to +150 °C stg Ambient temperature range T -55 to +100 °C amb Soldering temperature t = 10 s T 260 °C sld Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolut e maximum ratings for extended periods of the time can adversely affect reliability Axis Title Axis Title 200 10000 70 10000 W) 60 m Phototransistor on ( 150 mA) 50 wer Dissipati 100 IR diode 1000 1st line2nd line 2nd lineard Current ( 3400 1000 1st line2nd line o w P 100 or 100 - F 20 Pdiss 50 I-F 10 0 10 0 10 0 20 40 60 80 100 120 0 20 40 60 80 100 120 T -Ambient Temperature (°C) T -Ambient Temperature (°C) amb amb Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Maximum Forward Current vs. Ambient Temperature ELECTRICAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 60 mA V - 1.45 1.65 V F F Breakdown voltage I = 10 μA V 6 - - V R BR Reverse current V = 6 V I - 0.01 10 μA R R Capacitance V = 0 V, f = 1 kHz C - - 100 pF F I OUTPUT Collector emitter leakage current V =10 V I - 2 50 nA CE CEO COUPLER Collector emitter saturation voltage I = 10 mA, I = 2.5 mA V - 0.125 0.4 V F C CEsat Coupling capacitance V = 0, f = 1 MHz C - 0.6 - pF I-O IO Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements Rev. 1.7, 28-Feb-2019 2 Document Number: 83663 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SFH601 www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT SFH601-1 CTR 40 - 80 % SFH601-2 CTR 63 - 125 % I /I I = 10 mA, V = 5 V C F F CE SFH601-3 CTR 100 - 200 % SFH601-4 CTR 160 - 320 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Turn-on time VCC = 5 V, IC = 2 mA, RL = 100  ton - 3 - μs Turn-off time VCC = 5 V, IC = 2 mA, RL = 100  toff - 3 - μs V = 5 V CC Input pulse Input R L V 5 V OUT 90 % Output pulse 10 % tr tf 23029 ton toff 22986 Fig. 3 - Test Circuit for Switching Characteristics Fig. 4 - Parameter and Limit Definition SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Climatic classification According to IEC 68 part 1 55 / 115 / 21 Pollution degree According to DIN VDE 0109 2 Comparative tracking index Insulation group IIIa CTI 175 Maximum rated withstanding isolation voltage According to UL1577, t = 1 min V 5000 V ISO RMS Maximum transient isolation voltage According to DIN EN 60747-5-5 V 8000 V IOTM peak Maximum repetitive peak isolation voltage According to DIN EN 60747-5-5 V 890 V IORM peak Isolation resistance Tamb = 25 °C, VIO = 500 V RIO 1012  Tamb = 100 °C, VIO = 500 V RIO 1011  Output safety power P 700 mW SO Input safety current I 400 mA SI Input safety temperature T 175 °C SI Creepage distance DIP-6, SMD-6  7 mm Clearance distance  7 mm Creepage distance DIP-6, 400 mil  8 mm Clearance distance  8 mm Insulation thickness DTI  0.4 mm Note • As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance wit h the safety ratings shall be ensured by means of protective circuits Rev. 1.7, 28-Feb-2019 3 Document Number: 83663 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SFH601 www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb Axis Title Axis Title 10000 10 000 10000 I = 0 mA T = 25 °C F amb 1000 nt (mA) 10 Tamb= 75 °C 1000 ent (nA) 100 VCE= 40 V 1000 2nd lineard Curre Tamb= 100°C 1st line2nd line 2nd linekage Curr 10 VCE= 10 V 1st line2nd line orw 1 Tamb= 0 °C 100 Lea 1 VCE= 20 V 100 F - I-F ICEO 0.1 VCE= 30 V T = -55 °C amb 0.1 10 0.01 10 0.6 1.1 1.6 25 45 65 85 V -Forward Voltage (V) T -Ambient Temperature (°C) F amb Fig. 5 - Forward Current vs. Forward Voltage Fig. 8 - Leakage Current vs. Ambient Temperature Axis Title Axis Title 25 10000 1.2 10000 I = 20 mA I = 10 mA, V = 5 V F F CE 20 at.) 1.0 A) n-s m o 2nd linector Current ( 1105 IF= 10 mA 1000 1st line2nd line 2nd linealized CTR (n 00..68 1000 1st line2nd line Colle I = 5 mA 100 Norm 0.4 100 I-C 5 IFF= 2 mA IF= 1 mA N-CTR 0.2 Normalizedto IF = 10 mA, V = 5 V, T = 25 °C CE amb 0 10 0 10 0 1 2 3 4 5 -55 -35 -15 5 25 45 65 85 V -Collector Emitter Voltage (V) T -Ambient Temperature (°C) CE amb Fig. 6 - Collector Current vs. Collector Emitter Voltage Fig. 9 - Normalized CTR vs. Ambient Temperature (non-saturated) (non-saturated) Axis Title Axis Title 15 10000 1.0 10000 I = 10 mA, F IF= 20 mA at.) 0.8 VCE= 0.4 V mA) R (s 2nd lineI-Collector Current (C 105 IF=I F5 =m 1A0 mAIF= 1 mA 1100000 1st line2nd line 2nd lineN-Normalized CTCTR 000...246 1100000 1st line2nd line IF= 2 mA Normalizedto IF = 10 mA, V = 5 V, T = 25 °C CE amb 0 10 0 10 0 0.1 0.2 0.3 0.4 -55 -35 -15 5 25 45 65 85 V -Collector Emitter Voltage (V) T -Ambient Temperature (°C) CE amb Fig. 7 - Collector Current vs. Collector Emitter Voltage Fig. 10 - Normalized CTR vs. Ambient Temperature (saturated) (saturated) Rev. 1.7, 28-Feb-2019 4 Document Number: 83663 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SFH601 www.vishay.com Vishay Semiconductors Axis Title Axis Title 1.2 10000 0 10000 R = 75 Ω L sat.) 1.0 Tamb= 0 °C -2 n- 2nd linealized CTR (no 00..68 Tamb= 50T °aCmb= 25 °C Tamb= 75 °C 1000 1st line2nd line 2nd linge Gain (dB) --64 RL= 150 Ω 1000 1st line2nd line Norm 0.4 Tamb= 100 °C 100 Volta RL= 200Ω 100 -CTR 0.2 Normalized to CTR value: -8 N IF= 10 mA, VCE= 5 V, VCE= 5 V T = 25 °C 0 amb 10 -10 10 0.1 1 10 0.01 0.1 1 10 100 1000 I -Forward Current (mA) f -Frequency (kHz) F Fig. 11 - Normalized CTR vs. Forward Current Fig. 13 - Voltage Gain vs. Frequency (non-saturated) Axis Title Axis Title 1.0 10000 1000 10000 T = 0 °C CTR (sat.) 0.8 Tamb= 25 °aCmb 1000 me (μs) 100 1000 2nd lineNormalized 00..46 Tamb= 50 °C Tamb= 75 °C 1st line2nd line 2nd lineSwitching Ti tOFF 1st line2nd line - T = 100 °C 100 - 10 100 NCTR 0.2 Normalized toam CbTR value: , tONOFF tON I = 10 mA, V = 5 V, t F CE T = 25 °C 0 amb 10 1 10 0.1 1 10 0.1 1 10 I -Forward Current (mA) R -Load Resistance (kΩ) F L Fig. 12 - Normalized CTR vs. Forward Current Fig. 14 - Switching Time vs. Load Resistance (saturated) Rev. 1.7, 28-Feb-2019 5 Document Number: 83663 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SFH601 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 6 Pin Package 6 5 4 6.5 ± 0.5 1 2 3 7.3 ± 0.5 7.62 ± 0.3 1.1 ± 0.1 3.5 ± 0.3 0.5 typ. 2.8 ± 0.5 3.3 ± 0.5 0.5 ± 0.1 0.26 2.54 ± 0.25 7.62 to 9.98 22530 Option 6 Option 7 Option 9 7.62 typ. 7.62 typ. 7.62 typ. 3.5 ± 0.3 5 3.5 0.1 ± 0.1 3.5 ± 0.3 2 ± 0.3 0. 2.7 0.1 min. 35 ± 01..625 min. 0. 0.6 min. 8.16 ± 0.8 10.16 typ. 8 min. 10.16 ± 0.3 10.3 max. 0.76 0.76 R 0.25 R 0.25 2.54 2.54 1.78 1.78 8 min. 1.52 8 min. 1.52 20802-52 11.05 11.05 PACKAGE MARKING SFH601 Pin 1 I.D. V YWW 25 Fig. 15 - Example of SFH601 Notes • “YWW” is the date code marking (Y = year code, WW = week code) • VDE logo is only marked on VDE option parts • Tape and reel suffix (T) is not part of the package marking Rev. 1.7, 28-Feb-2019 6 Document Number: 83663 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SFH601 www.vishay.com Vishay Semiconductors PACKAGING INFORMATION (in millimeters) DEVICES PER TUBE TYPE UNITS/TUBE TUBES/BOX UNITS/BOX DIP-6 50 40 2000 DIP-6, option 6 50 40 2000 SMD-6, option 9 50 40 2000 DIP-6 5 1 0.2 5.15 ± 0.5.00 ± 0.104.6.1 ±5 +0- 00.1..1055 7.0 ± 0.1 8.4 ± 0.1 0 ± CANITTAITSSTIATTNICA 5 4. 1 1.85 ± 0.1 Msuarfrakcineg ± 0.1 5.35 ± 0.2 250.7 20 10.35 ± 0.2 518 ± 1 4. 23010 Spec for China only Fig. 16 - DIP-6 SMD-6 Ø 1.55 ± 0.05 2 ± 0.1 4 ± 0.1 1.75 ± 0.1 1 0. 7.5 ± ± 0.3 6 1 12 ± 0.1 0.3 ± 0.05 23031 Fig. 17 - SMD-6 Rev. 1.7, 28-Feb-2019 7 Document Number: 83663 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SFH601 www.vishay.com Vishay Semiconductors Reel + 0.2 1.8 - 0 8 0. 21 ± + 0.53- 0.2 330.0 ± 2 100.0 ± 0.3 1 5 0. ± 0 2. + 1 16.4- 0 23012 Fig. 18 - Tape and Reel Shipping Medium SOLDER PROFILES IR Reflow Soldering (JEDEC® J-STD-020C compliant) One time soldering reflow is recommended within th e Axis2 T0 istle 10000 10000 condition of temperature and time profile shown below. D o Ramp-up Tp (260 °C) not solder more than three times. TL (217 °C) PROFILE ITEM CONDITIONS C) 1000 TS max. (200 °C) Ramp-down 1000 P r--e TTheeemamtppeerraattuurree mmainximimuumm (T(TSS m mina.x).) 125000 °°CC 2nd lineemperarure (° 100 T(1S5 m0i n°.C) tL (so6l0d esring) 100 1st line2nd line - Time (min. to max.) (t ) 90 s ± 30 s T S Soldering zone - Temperature (T ) 217 °C L - Time (tL) 60 s 25 10 0 20 40 60 80 Time (s) Peak temperature (Tp) 260 °C 60 s to 120 s 35 s to 70 s Ramp-up rate 3 °C/s max. 23016 tS (preheat) Time (s) Ramp-down rate 3 °C/s to 6 °C/s Fig. 19 Rev. 1.7, 28-Feb-2019 8 Document Number: 83663 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SFH601 www.vishay.com Vishay Semiconductors Wave Soldering (JEDEC JESD22-A111 compliant) Hand Soldering by Soldering Iron One time soldering is recommended within the condition of Allow single lead soldering in every single process. One tim e temperature. soldering is recommended. Temperature: 260 °C + 0 °C / - 5 °C Temperature: 380 °C + 0 °C / - 5 °C Time: 10 s Time: 3 s max. Preheat temperature: 25 °C to 140 °C Preheat time: 30 s to 80 s Axis Title 300 10000 260 °C + 0 °C / - 5 °C wave temperature 250 First wave Second wave C) 200 1000 2nd lineperature (° 150 +200 °C/s -5 °C/s 1st line2nd line m e 100 +2 °C/s 100 T Preheat zone 50 0 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 23017 Time (min) Fig. 20 Rev. 1.7, 28-Feb-2019 9 Document Number: 83663 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DIP-6A www.vishay.com Vishay Semiconductors DIP-6A PACKAGE DIMENSIONS in inches (millimeters) Pin one ID 3 2 1 6.4 ± 0.1 4 5 6 ISO method A 8.6 ± 0.1 7.62 typ. 1.2 ± 0.1 1 min. 3.555 ± 0.255 18° 4° typ. 0.8 min. 2.95 ± 0.5 0.85 ± 0.05 3° to 9° 0.25 typ. 0.5 ± 0.05 7.62 to 8.81 i178004 2.54 typ. Note The information in this document provides generic information but for specific information on a product the appropriate product datasheet should be used. Rev. 1.2, 24-Aug-15 1 Document Number: 83263 For technical questions, contact: optocoupler.answers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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