TVS Diode Arrays (SPA ® Diodes) SESD Series Enhanced ESD Diode Arrays SESD Series Ultra Low Capacitance Discrete TVS RoHS Pb GREEN ELV Description The SESD Series Ultra Low Capacitance Discrete TVS provides unidirectional and bidirectional ESD protection for the world’s most challenging high speed serial interfaces. Ultra low capacitance permits excellent signal integrity on the most challenging consumer electronics interfaces, such as USB 3.1, HDMI 2.0, DisplayPort, and V-by-One®. Providing in excess of 20kV contact ESD protection (IEC61000-4-2) while maintaining extremely low leakage and dynamic resistance, offered in the industry’s most popular footprints (0402 and 0201), the SESD series sets higher standards for signal integrity and usability. Pinout Features • 0.13pF MAX bidirectional • Low profile 0201 and 0402 DFN • 0.25pF MAX unidirectional 0402 DFN packages 0201DFN • ESD, IEC61000-4-2, • Facilitates excellent signal 1 integrity 1 ±20kV contact, ±20kV air • AEC-Q101 qualified • Low clamping voltage of 10V @ I =2A • ELV Compliant PP (Bidirectional) (t =8/20μs) P 2 2 Applications Bottom View • Ultra-high speed data • Consumer, mobile and lines portable electronics Functional Block Diagram • USB 3.1, 3.0, 2.0 • Tablet PC and external • HDMI 2.0, 1.4a, 1.3 storage with high speed interfaces 1 • DisplayPort(TM) 1 • Applications requiring • Thunderbolt (Light Peak) high ESD performance in • V-by-One® small packages • LVDS interfaces 2 2 Unidirectional Bidirectional © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/26/15

TVS Diode Arrays (SPA ® Diodes) SESD Series Enhanced ESD Diode Arrays Absolute Maximum Ratings Thermal Information Symbol Parameter Value Units Parameter Rating Units I Peak Current (t=8/20μs) 2.0 A Storage Temperature Range -55 to 150 °C PP p T Operating Temperature -55 to 125 °C Maximum Junction Temperature 150 °C OP Maximum Lead Temperature T Storage Temperature -55 to 150 °C 260 °C STOR (Soldering 20-40s) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Unidirectional Electrical Characteristics - (T =25°C) OP Parameter Test Conditions Min Typ Max Units Input Capacitance @ V = 0V, f = 3GHz 0.20 0.25 pF R Breakdown Voltage V @ I=1mA 9.00 V BR T Reverse Working Voltage 7.0 V Reverse Leakage Current I @ V =5.0V 25 50 nA L RWM Clamping Voltage V @ I =2.0A 9.20 V CL PP IEC61000-4-2 (Contact) ±20 ESD Withstand Voltage kV IEC61000-4-2 (Air) ±20 Bidirectional Electrical Characteristics - (T =25°C) OP Parameter Test Conditions Min Typ Max Units Input Capacitance @ V = 0V, f = 3GHz 0.10 0.13 pF R Breakdown Voltage V @ I=1mA 9.80 V BR T Reverse Working Voltage -7.0 7.0 V Reverse Leakage Current I @ V =5.0V 25 50 nA L RWM Clamping Voltage V @ I =2.0A 10.0 V CL PP IEC61000-4-2 (Contact) ±20 ESD Withstand Voltage kV IEC61000-4-2 (Air) ±20 Insertion Loss Diagram - Unidirectional Insertion Loss Diagram - Bidirectional 0 0 -5.0 -5.0 S21 Insertion Loss (dB) ----12120505....0000 S21 Insertion Loss (dB) ----12120505....0000 -30.0 -30.0 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 Frequency (Hz) Frequency (Hz) © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/26/15

TVS Diode Arrays (SPA ® Diodes) SESD Series Enhanced ESD Diode Arrays Device IV Curve - Unidirectional Device IV Curve - Bidirectional 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 )Am 0.0 )Am 0.0 ( tnerruC --00..24 ( tnerruC --00..24 -0.6 -0.6 -0.8 -0.8 -1.0 -1.0 -2 -1 0 1 2 3 4 5 6 7 8 9 10 -10 -8 -6 -4 -2 0 2 4 6 8 10 Voltage (V) Voltage (V) USB3.0 Eye Diagram 5.0 Gb/s, 1000mV differential, CPO Compliant Test Pattern Without SESD Device With SESD Device Soldering Parameters Reflow Condition Pb – Free assembly tP - Temperature Min (T ) 150°C TP CCrriittiiccaall ZZoonnee Pre Heat - Temperature Max (Ts(min)) 200°C e RRaammpp--uupp TTLL ttoo TTPP - Time (min to max) (tss()max) 60 – 180 secs rutare TS(mTaxL) tL Average ramp up rate (Liquidus) Temp (TL) 3°C/second max pm RRaammpp--ddoown to peak eT PPrreehheeaatt TS(min) TS(max) to TL - Ramp-up Rate 3°C/second max tS - Temperature (T) (Liquidus) 217°C Reflow L 25 - Temperature (tL) 60 – 150 seconds time to peak temperature Time Peak Temperature (T) 260+0/-5 °C P Time within 5°C of actual peak 20 – 40 seconds Product Characteristics of 0402 DFN Package Temperature (t) p Ramp-down Rate 6°C/second max Lead Plating Pre-Plated Frame Time 25°C to peak Temperature (T) 8 minutes Max. Lead Material Copper Alloy P Do not exceed 260°C Lead Coplanarity 0.0004 inches (0.102mm) Substrate material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/26/15

TVS Diode Arrays (SPA ® Diodes) SESD Series Enhanced ESD Diode Arrays Package Dimensions — 0201 DFN Millimeters Inches A3 Symbol Min Typ Max Min Typ Max A 0.28 0.30 0.32 0.011 0.012 0.013 END VIEW A1 0 - 0.05 0 - 0.002 D b A3 0.102 ref. 0.004 ref. 2 D 0.25 0.30 0.35 0.010 0.012 0.014 L1 E 0.55 0.60 0.65 0.022 0.024 0.026 E K e PCI0N.0 15 ID K 0.11 0.17 0.22 0.004 0.007 0.009 L2 1 b 0.20 0.25 0.30 0.008 0.010 0.012 L1 0.13 0.18 0.23 0.005 0.008 0.009 SIDE VIEW 1 TOP VIEW SIDE VIEW 2 BOTTOM VIEW L2 0.14 0.19 0.24 0.006 0.007 0.009 e 0.356 BSC 0.014 BSC A M 0.32 0.013 A1 N 0.24 0.009 END VIEW O 0.62 0.024 P 0.14 0.006 M P O N Package Dimensions — 0402 DFN A3 Millimeters Inches Symbol Min Typ Max Min Typ Max END VIEW A 0.33 0.38 0.43 0.013 0.015 0.017 A1 0 - 0.05 0 - 0.002 D b A3 0.13 ref. 0.005 ref. L D 0.55 0.60 0.65 0.022 0.024 0.026 E K e E 0.95 1.00 1.05 0.037 0.039 0.041 K 0.35 0.40 0.45 0.014 0.016 0.018 PIN 1 ID b 0.45 0.50 0.55 0.018 0.020 0.022 0.125 x 45° SIDE VIEW1 TOP VIEW SIDE VIEW2 BOTTOM VIEW L 0.20 0.25 0.30 0.008 0.010 0.012 e 0.65 BSC 0.026 BSC M 0.60 0.024 A N 0.35 0.014 A1 O 1.00 0.039 END VIEW P 0.30 0.012 M P O N © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/26/15

TVS Diode Arrays (SPA ® Diodes) SESD Series Enhanced ESD Diode Arrays Part Numbering System Part Marking System SESD xxxx X 1xN00x0–xxx Breakdown Voltage C C C C SESD product 090:9.0V (TYP) Package 098: 9.8V (TYP) 0201 Input Capacitance Unidirectional Bidirectional 0402 0010: 0.1pF (TYP) DFN Package 0020: 0.2pF (TYP) No Common pin 1: one channel Directional U: Unidirectional B: Bidirectional Ordering Information Part Number Package Marking Ordering Part Number Components/Reel Quantity SESD0201X1UN-0020-090 0201 DFN I C RF2192-000 15000 SESD0201X1BN-0010-098 0201 DFN C RF2193-000 15000 SESD0402X1UN-0020-090 0402 DFN I C RF2943-000 10000 SESD0402X1BN-0010-098 0402 DFN C RF2945-000 10000 Embossed Carrier Tape & Reel Specification — 0201 DFN T D0 P2 P0 Symbol Millimeters Y E1 A0 0.36+/-0.03 D1 B0 0.66+/-0.03 F W D0 ø 1.50 + 0.10/-0 B0 D1 ø 0.20 +/- 0.05 E1 1.75+/-0.10 K0 Section Y - Y A0 Y P1 F 3.50+/-0.05 K0 0.33+/-0.03 P0 4.00+/-0.10 P1 2.00+/-0.10 P2 2.00+/-0.05 W 8.00 +/-0.10 T 0.23+/-0.02 Embossed Carrier Tape & Reel Specification — 0402 DFN T D0 Y P2 P0 E1 Symbol Millimeters A0 0.70+/-0.05 D1 B0 1.15+/-0.05 F W B0 D0 ø 1.55 + 0.05 D1 ø 0.40 +/- 0.05 K0 E1 1.75+/-0.10 Section Y - Y A0 Y P1 F 3.50+/-0.05 K0 0.47+/-0.05 P0 4.00+/-0.10 P1 2.00+/-0.10 P2 2.00+/-0.05 W 8.00 +/-0.10 T 0.20+/-0.05 © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/26/15