SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20¡ (nominal) acceptance angle • Consistent optical properties Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes INFRA-22.TIF DESCRIPTION OUTLINE DIMENSIONSin inches (mm) The SDP8405 is an NPN silicon phototransistor transfer Tolerance 3 plc decimals ±0.005(0.12) molded in a T-1 clear plastic package. Transfer molding 2 plc decimals ±0.020(0.51) of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method .200(5.08) of polarity identification. .180(4.57) .03(.76) .020SQ.LEADTYP .05(1.27) (.51) COLLECTOR .050 (1.27) EMITTER .125(3.18) .115(2.92)DIA. .155 DIA. .500 (3.94) (12.7)MIN. .250 (6.35) MAX. DIM_100.ds4 h Honeywell reserves the right to make 116 changes in order to improve design and supply the best products possible. •

SDP8405 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Power Dissipation 70 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C. Honeywell reserves the right to make h changes in order to improve design and 117 supply the best products possible.

SDP8405 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT SWITCHING WAVEFORM cir_015.cdr cir_004.cdr Fig. 1 Responsivity vs Fig. 2 Collector Current vs Angular Displacement gra_047.ds4 Ambient Temperature gra_039.ds4 1.0 2.0 0.9 e 0.8 ro 1.6 lit rvsseaeepon 00000.....34567 li lltzccaedoemt rrcuen 01..82 R 0.2 roN 0.4 0.1 0.0 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 0 10 20 30 40 50 60 70 80 Angular displacement - degrees Ambient temperature - °C Fig. 3 Dark Current vs Fig. 4 Non-Saturated Switching Time vs Temperature gra_301.cdr Load Resistance gra_041.ds4 100 s µ - e m i te 10 s n o p s e R 1 10 100 1000 10000 Load resistance - Ohms h Honeywell reserves the right to make 118 changes in order to improve design and supply the best products possible.

SDP8405 Silicon Phototransistor Fig. 5 Spectral Responsivity Fig. 6 Coupling Characteristics gra_036.ds4 with SEP8505 gra_029.ds4 1.0 10 0.9 7 sspone 000...678 t -nAm 24 ITFVA =C =E 2 =25 5 5m °VCA lit rveaeeR 0000....2345 it rrcLghue 000...1247 0.1 0.1 400 600 800 1000 1200 0.01 0.02 0.04 0.1 0.2 0.4 0.7 1 Wavele ngth - nm Lens-to-lens separation - inches All Performance Curves Show Typical Values Honeywell reserves the right to make h changes in order to improve design and 119 supply the best products possible.