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  • 型号: SD57060
  • 制造商: STMicroelectronics
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SD57060产品简介:

ICGOO电子元器件商城为您提供SD57060由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SD57060价格参考。STMicroelectronicsSD57060封装/规格:晶体管 - FET,MOSFET - 射频, 射频 Mosfet LDMOS 28V 100mA 945MHz 15dB 60W M243。您可以下载SD57060参考资料、Datasheet数据手册功能说明书,资料中有SD57060 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANSISTOR RF PWR LDMOST M243

产品分类

RF FET

品牌

STMicroelectronics

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

SD57060

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

产品目录页面

点击此处下载产品Datasheet

供应商器件封装

M243

其它名称

497-5479
SD57060-ND

其它有关文件

http://www.st.com/web/catalog/sense_power/FM1987/CL1989/SC1829/PF64197?referrer=70071840

功率-输出

60W

包装

散装

噪声系数

-

增益

15dB

封装/外壳

M243

晶体管类型

LDMOS

标准包装

25

电压-测试

28V

电压-额定

65V

电流-测试

100mA

频率

945MHz

额定电流

7A

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PDF Datasheet 数据手册内容提取

SD57060 RF power transistor the LdmoST family Features ■ Excellent thermal stability ■ Common source configuration ■ P = 60W with 13dB gain @ 945MHz OUT ■ BeO free package ■ In compliance with the 2002/95/EC european directive Description M243 The SD57060 is a common source N-Channel Epoxy sealed enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to Figure 1. Pin connection 1.0 GHz. The SD57060 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high linearity. 1 3 2 1. Drain 3. Source 2. Gate Table 1. Device summary Order code Package Branding SD57060 M243 SD57060 August 2007 Rev 7 1/16 www.st.com 16

Contents SD57060 Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.1 SD57060 (VDS = 13.5V IDS = 2A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.2 SD57060 (VDS = 28V IDS = 2A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 7 Text circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/16

SD57060 Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (T = 25°C) CASE Symbol Parameter Value Unit V Drain-source voltage 65 V (BR)DSS V Gate-source voltage ± 20 V GS I Drain current 7 A D P Power dissipation (@ Tc = 70°C) 108 W DISS T Max. operating junction temperature 200 °C J T Storage temperature -65 to + 150 °C STG 1.2 Thermal data Table 3. Thermal data Symbol Parameter Value Unit R Junction - case thermal resistance 1.2 °C/W thJC 3/16

Electrical characteristics SD57060 2 Electrical characteristics T = +25 oC CASE 2.1 Static Table 4. Static Symbol Test conditions Min Typ Max Unit V V = 0 V I = 1 mA 65 V (BR)DSS GS DS I V = 0 V V = 28 V 1 µA DSS GS DS I V = 20 V V = 0 V 1 µA GSS GS DS V V = 28 V I = 250 mA 2.0 5.0 V GS(Q) DS D V V = 10 V I = 3 A 0.7 0.8 V DS(ON) GS D G V = 10 V I = 3 A 2.5 S FS DS D C (1) V = 0 V V = 28 V f = 1 MHz 88 pF ISS GS DS C V = 0 V V = 28 V f = 1 MHz 44 pF OSS GS DS C V = 0 V V = 28 V f = 1 MHz 1.7 pF RSS GS DS 1. Includes Internal Input Moscap. 2.2 Dynamic Symbol Test conditions Min Typ Max Unit P V = 28 V I = 100 mA f = 945MHz 60 W OUT DD DQ G V = 28 V I = 100 mA P = 60 Wf = 945MHz 13 15 dB PS DD DQ OUT h V = 28 V I = 100 mA P = 60 Wf = 945MHz 53 60 % D DD DQ OUT Load VDD = 28 V IDQ = 100 mA POUT = 60 Wf = 945MHz 5:1 VSW mismatch All phase angles R 4/16

SD57060 Impedance 3 Impedance Figure 2. Current conventions Table 5. Impedance data Freq. (MHz) Z (Ω) Z (Ω) IN DL 925 MHz 0.8 - j 0.095 1.5 + j 0.48 945 MHz 0.7 - j 0.05 1.6 + j 0.25 960 MHz 0.7 + j 0.1 1.7 + j 0.130 5/16

Typical performance SD57060 4 Typical performance Figure 3. Output power and power gain vs Figure 4. Output power and power gain vs input power input power 80 18 80 16 70 GP POUT 70 Gain Pout 17 60 15 60 16 Pout (W) 345000 VDD= 28 V 14 Pgain (dB) Pout (W) 345000 Vdd= 32V 111345 Gain (dB) 20 f = 945 MHz 13 20 f= 945MHz 12 IDQ= 100mA Idq= 100mA 10 10 11 0 12 0 10 0 1 2 3 4 0 0.5 1 1.5 2 2.5 3 Pin (W) Pin (W) Figure 5. Efficiency vs output power Figure 6. Efficiency vs output power 70 70 60 60 50 50 Nc (%) 3400 f = 945 MHz Efficiency (%)3400 f = 945 MHz 20 VDD= 28 V 20 VDD= 32 V 10 IDQ= 100 mA 10 IDQ= 100 mA 0 0 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 Pout (W) Output Power (W) 6/16

SD57060 Typical performance Figure 7. O utput power vs drain-source Figure 8. Intermodulation distortion vs voltage output power 90 -15 f1 = 945 MHz Pin = 3 W f2 = 945.1 MHz 80 Pin = 2 W -20 VDD= 28 V 70 -25 IDQ= 100 mA Pout (W)456000 Pin = 1 W MD3 (-dBc)--3350 IDQ= 250 mA I-40 30 IDQ= 400 mA -45 20 IDQ = 100 mA 10 f = 1945 MHz -50 0 -55 10 15 20 25 30 35 1 10 100 Drain-Source Voltage (V) Pout, PEP (W) Figure 9. Power gain vs output power Figure 10. Safe operating area 10 30 B) Tc=70°C POWER GAIN (d22226789 fV =D D30 = M 5H0z V Id, Drain Current (A) Tc=100°C G, 25 IDQ = 250 mA Tj=200°C P 24 0 40 80 120 160 200 1 Pout, OUTPUT POWER (W) 1 10 100 Vds, Drain Source Voltage (V) 7/16

Typical performance SD57060 Figure 11. Capacitance vs drain-source voltage 1000 f = 1MHz Ciss F) 100 p e ( anc Coss acit p a C 10 Crss 1 0 10 20 30 40 50 Drain-Source Voltage (V) 8/16

SD57060 Common source s-parameter 5 Common source s-parameter 5.1 SD57060 (V = 13.5V I = 2A) DS DS Table 6. S-parameter Freq s11 MAG s11 ang s21 MAG s21 ang s12 MAG s12 ang s22 MAG s22 ang (MHz) 50 0.896 -168.86 15.679 85.012 0.0116 -5.1128 0.796 -170.27 60 0.896 -169.3 14.859 84.592 0.0116 -5.4369 0.796 -170.49 70 0.869 -169.76 14.004 84.14 0.0116 -5.7912 0.797 -170.7 80 0.869 -170.23 13.122 83.644 0.0115 -60658 0.797 -170.9 90 0.897 -170.71 12.213 83.074 0.0115 -6.3789 0.798 -171.1 100 0.897 -171.19 11.285 82.404 0.0114 -6.8198 0.799 -171.29 150 0.9 -173.39 6.9575 76.841 0.0111 -9.6817 0.808 -171.96 200 0.905 -174.29 4.751 71.951 0.0103 -11.87 0.821 -171.79 250 0.912 -174.64 3.637 68.471 0.0097 -12.957 0.836 -171.36 300 0.92 .-174.9 2.889 64.839 0.0089 -13.493 0.851 -171.03 350 0.927 -175.08 2.428 62.538 0.0083 -11.937 0.866 -170.76 400 0.934 -175.3 2.077 58.748 0.0077 -11.228 0.881 -170.6 450 0.941 -175.5 1.802 56.081 0.0071 -8.7753 0.894 -170.49 500 0.947 -175.73 1.592 51.84 0.0066 -7.5009 0.907 -170.47 550 0.952 -176.02 1.379 48.632 0.0059 -4.8834 0.917 -170.55 600 0.956 -176.29 1.221 45.777 0.0053 0.12909 0.927 -170.67 650 0.96 -176.6 1.049 42.778 0.0048 5.0249 0.936 -170.82 700 0.962 -176.9 0.924 42.212 0.0043 13.591 0.943 -170.94 750 0.965 -177.22 0.814 40.376 0.0039 22.729 0.95 -171.05 800 0.968 177.51 0.723 41.348 0.0036 37.954 0.956 -171.14 850 0.97 -177.83 0.662 40.788 0.0037 51.305 0.961 -171.16 900 0.972 -178.19 0.6 41.719 0.0041 63.188 0.966 -171.24 950 0.974 -178.56 0.566 41.469 0.0047 73.463 0.971 -171.24 1000 0.975 -178.96 0.523 41.747 0.0055 80.707 0.974 -171.25 1050 0.976 -179.28 0.504 41.439 0.0064 88.27 0.977 -171.26 1100 0.978 -179.62 0.477 40.692 0.0074 92.504 0.979 -171.36 1150 0.979 -179.85 0.466 39.239 0.0084 96.743 0.981 -171.43 1200 0.981 179.9 0.444 36.775 0.0097 98.282 0.982 171.5 1250 0.982 179.68 0.431 34.788 0.011 99.121 0.983 -171.58 1300 0.983 179.52 0.408 31.862 0.0125 98.773 0.983 -171.71 1350 0.984 179.35 0.395 30.219 0.0136 97.973 0.983 -171.86 1400 0.985 179.24 0.382 26.465 0.0148 97.464 0.984 -171.94 1450 0.987 179.13 0.365 23.869 0.0157 95.39 0.984 -171.98 1500 0.988 179.09 0.351 21.267 0.0165 93.871 0.985 -171.98 9/16

Common source s-parameter SD57060 5.2 SD57060 (V = 28V I = 2A) DS DS Table 7. S-parameter Freq s11 MAG s11 ang s21 MAG s21 ang s12 MAG s12 ang s22 MAG s22 ang (MHz) 50 0.857 -159.69 22.757 85.934 0.0114 -3.8342 0.67 -161.72 60 0.86 -160.69 21.547 85.328 0.0113 -4.4852 0.672 -162.07 70 0.862 -161.73 20.287 84.672 0.0112 -5.1512 0.674 -162.41 80 0.865 -162.8 18.987 83.933 0.0111 -5.8379 0.677 -162.74 90 0.869 -163.89 17.65 83.083 0.011 -6.5533 0.679 -163.07 100 0.872 -164.98 16.286 82.083 0.011 -7.4226 0.683 -163.39 150 0.891 -169.66 9.9447 74.03 0.0103 -12.13 0.708 -164.66 200 0.905 -171.43 6.719 67.256 0.0094 -15.548 0.74 -164.87 250 0.915 -172.29 5.074 62.268 0.0086 -17.236 0.774 -164.99 300 0.926 -172.84 3.978 57.533 0.0077 -18.625 0.806 -163.35 350 0.935 -173.34 3.297 54.035 0.0069 -17.313 0.834 -165.82 400 0.943 -173.79 2.775 49.488 0.0061 -16.81 0.86 -166.35 450 0.951 -174.24 2.376 46.121 0.0054 -13.006 0.881 -166.85 500 0.957 -174.67 2.061 41.541 0.0048 -9.175 0.898 -167.35 550 0.962 -175.11 1.766 38.23 0.0041 -2.5323 0.913 -167.83 600 0.966 -175.53 1.546 35.173 0.0035 -7.641 0.925 -168.25 650 0.969 -175.95 1.32 32.548 0.0031 19.501 0.937 -168.57 700 0.972 -176.34 1.162 31.674 0.0031 34.423 0.946 -168.81 750 0.974 -176.75 1.021 29.983 0.0032 48.345 0.954 -168.93 800 0.976 -177.15 0.91 30.341 0.0035 62.927 0.96 -168.98 850 0.977 -177.57 0.826 29.318 0.004 74.982 0.967 -168.95 900 0.978 -177.98 0.749 29.508 0.0047 81.962 0.973 -168.88 950 0.979 -178.41 0.696 28.477 0.0054 87.332 0.978 -168.77 1000 0.979 -178.85 0.639 27.949 0.0063 90.913 0.982 -168.72 1050 0.98 -179.24 0.601 26.768 0.0072 95.707 0.984 -168.75 1100 0.981 -179.61 0.561 25.598 0.0082 98.95 0.985 -168.87 1150 0.981 -179.95 0.533 23.746 0.0094 101.25 0.986 -169.13 1200 0.982 179.72 0.498 21.331 0.011 102.03 0.985 -169.64 1250 0.983 179.44 0.472 19.005 0.012 102.21 0.981 -170.42 1300 0.984 179.23 0.44 16.272 0.0131 101.78 0.976 -171.5 1350 0.985 179.02 0.417 14.424 0.0143 100.61 0.969 -172.89 1400 0.986 178.85 0.394 11.161 0.0156 99.505 0.96 -174.72 1450 0.986 178.7 0.372 8.789 0.0163 97.699 0.949 -176.87 1500 0.986 178.6 0.354 6.5533 0.0168 96.68 0.94 -178.58 10/16

SD57060 Test circuit 6 Test circuit Figure 12. Test circuit schematic Ref. 7143566A 1 Dimensions at component symbols are reference for component placement. 2 Gap between ground & transmission line = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] typ. 3 Dimensions of input and output component from edge of transmission lines. 11/16

Test circuit SD57060 Table 8. Test circuit component part list Component Description INDUCTOR, 5 TURNS AIR WOUND #18 AWG, ID = 0.125 [3.18] NYLON L1 COATED MAGNET WIRE FB1 SHIELD BEAD SURFACE MOUNT EMI R1 1 K Ohm, SURFACE MOUNT CHIP RESISTOR R2 18 K Ohm, SURFACE MOUNT CHIP RESISTOR R3 10 K Ohm, SURFACE MOUNT CHIP RESISTOR C1 36 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C2,C8 0.8-8.0 pF GIGA TRIM VARIABLE CAPACITOR C3 4.7 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C4 11 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C5 1.3 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C6 7.5 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C7 8.2 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C9 100 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C10,C14 47 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C11,C15 10000 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C12,C16 0.1 µF / 500 V SURFACE MOUNT CERAMIC CHIP CAPACITOR C13,C17 10 µF / 50 V ALUMINIUM ELECTROLITIC RADIAL LEAD CAPACITOR C18 220 µF / 63 V V ALUMINIUM ELECTROLITIC RADIAL LEAD CAPACITOR ULTRALAM 2000, WOVEN FIBERGLASS REINFORCED PTFE. PCB 0.030” THK, εr= 2.55, 2 OZ ED CU BOTH SIDES 12/16

SD57060 Text circuit layout 7 Text circuit layout Figure 13. Test fixture Ref. 7143566A Figure 14. Test circuit photomaster s e h c n 4 i 6.4 inches Ref. 7143566A 13/16

Package mechanical data SD57060 8 Package mechanical data T able 9. M243 (.230 x .360 2L N/HERM W/FLG) mechanical data Dim. mm. Inch Min Typ Max Min Typ Max A 5.21 5.72 0.205 0.225 B 5.46 6.48 0.215 0.255 C 5.59 6.10 0.220 0.240 D 14.27 0.562 E 20.07 20.57 0.790 0.810 F 8.89 9.40 0.350 0.370 G 0.10 0.15 0.004 0.006 H 3.18 4.45 0.125 0.175 I 1.83 2.24 0.072 0.088 J 1.27 1.78 0.050 0.070 Figure 15. Package dimensions Controlling dimension: Inches 1022142E 14/16

SD57060 Revision history 9 Revision history Table 10. Document revision history Date Revision Changes 24-Mar-2003 5 First Issue. 23-Jul-2007 6 Document reformatted, added lead free info 24-Aug-2007 7 Cover page title updated 15/16

SD57060 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16