SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet - production data • P = 150 W min. with 14 dB gain @ 175 MHz OUT • Thermally enhanced packaging for lower junction temperatures Description The SD2931-10 is a gold metalized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large M174 signal applications up to 230 MHz. Epoxy sealed The SD2931-10 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25% lower thermal resistance), Figure 1. Pin connection representing the best-in-class transistors for ISM applications, where reliability and ruggedness are 4 1 critical factors. 3 2 1. Drain 3. Gate 2. Source 4. Source Features • Gold metalization • Excellent thermal stability • Common source configuration Table 1. Device summary Order code Marking Base qty. Package Packaging(1) SD2931-10W SD2931-10 25 pcs M174 Plastic tray 1. For more details please refer to Chapter11: Marking, packing and shipping specifications. July 2016 DocID7076 Rev 10 1/19 This is information on a product in full production. www.st.com

Contents SD2931-10 Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Transient thermal impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Typical performance @ 175 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 8 Typical performance @ 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 Test circuit @ 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 10 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 11 Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 17 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 DocID7076 Rev 10

SD2931-10 Electrical data 1 Electrical data 1.1 Maximum ratings (T = 25 °C). CASE Table 2. Absolute maximum ratings Symbol Parameter Value Unit V (1) Drain source voltage 125 V (BR)DSS V Drain-gate voltage (R = 1 MΩ) 125 V DGR GS V Gate-source voltage ±40 V GS I Drain current 20 A D P Power dissipation 389 W DISS T Max. operating junction temperature 200 °C J T Storage temperature -65 to +150 °C STG 1. T = 150°C J 1.2 Thermal data Table 3. Thermal data Symbol Parameter Value Unit R Junction - case thermal resistance 0.45 °C/W thJC DocID7076 Rev 10 3/19 19

Electrical characteristics SD2931-10 2 Electrical characteristics (T = 25 °C). CASE 2.1 Static Table 4. Static (per side) Symbol Test conditions Min Typ Max Unit V V = 0 I = 100 mA 125 V (BR)DSS GS DS I V = 0 V = 50 V 50 μA DSS GS DS V = 20 V = 0 250 nA IGSS GS DS V (1) V = 10 V I = 250 mA See table below V GS(Q) DS D V V = 10 V I = 10 A 3.0 V DS(ON) GS D G V = 10 V I = 5 A 5 6 mho FS DS D C V = 0 V = 50 V f = 1 MHz 480 pF ISS GS DS C V = 0 V = 50 V f = 1 MHz 190 pF OSS GS DS V = 0 V = 50 V f = 1 MHz 18 pF CRSS GS DS 1. V sorted with alpha/numeric code marked on unit. GS(Q) 2.2 Dynamic Table 5. Dynamic Symbol Test conditions Min Typ Max Unit P V = 50 V I = 250 mA f = 175 MHz 150 W OUT DD DQ G V = 50 V I = 250 mA P 150 W f = 175 MHz 14 15 dB PS DD DQ OUT = n V = 50 V I = 250 mA P = 150 W f = 175 MHz 55 65 % D DD DQ OUT Load VDD = 50 V IDQ = 250 mA POUT = 150 Wf = 175 MHz 10:1 VSWR mismatch All phase angles 4/19 DocID7076 Rev 10

SD2931-10 Electrical characteristics Table 6. V sorts GS Symbol Value Symbol Value A 2.0 - 2.1 K 2.9 - 3.0 B 2.1 - 2.2 L 3.0 - 3.1 C 2.2 - 2.3 M 3.1 - 3.2 D 2.3 - 2.4 N 3.2 - 3.3 E 2.4 - 2.5 P 3.3 - 3.4 F 2.5 - 2.6 Q 3.4 - 3.5 G 2.6 - 2.7 R 3.5 - 3.6 H 2.7 - 2.8 S 3.6 - 3.7 J 2.8 - 2.9 DocID7076 Rev 10 5/19 19

Transient thermal impedance SD2931-10 3 Transient thermal impedance Figure 2. Transient thermal impedance (cid:54)(cid:76)(cid:81)(cid:74)(cid:79)(cid:72)(cid:3)(cid:16)(cid:3)(cid:85)(cid:72)(cid:83)(cid:72)(cid:87)(cid:76)(cid:87)(cid:76)(cid:89)(cid:72)(cid:3)(cid:83)(cid:88)(cid:79)(cid:86)(cid:72) (cid:19)(cid:17)(cid:24)(cid:19) (cid:86)(cid:76)(cid:81)(cid:74)(cid:79)(cid:72)(cid:3)(cid:83)(cid:88)(cid:79)(cid:86)(cid:72) (cid:12) (cid:58) (cid:19)(cid:17)(cid:23)(cid:24) (cid:20)(cid:19)(cid:8) (cid:38)(cid:3)(cid:18)(cid:3) (cid:21)(cid:19)(cid:8) (cid:11)(cid:3)(cid:131) (cid:19)(cid:17)(cid:23)(cid:19) (cid:22)(cid:19)(cid:8) (cid:3) (cid:38) (cid:23)(cid:19)(cid:8) (cid:16) (cid:19)(cid:17)(cid:22)(cid:24) (cid:45) (cid:24)(cid:19)(cid:8) (cid:43) (cid:25)(cid:19)(cid:8) (cid:55) (cid:19)(cid:17)(cid:22)(cid:19) (cid:61) (cid:26)(cid:19)(cid:8) (cid:16) (cid:72)(cid:3) (cid:19)(cid:17)(cid:21)(cid:24) (cid:27)(cid:19)(cid:8) (cid:70) (cid:28)(cid:19)(cid:8) (cid:81) (cid:68) (cid:19)(cid:17)(cid:21)(cid:19) (cid:71) (cid:72) (cid:83) (cid:19)(cid:17)(cid:20)(cid:24) (cid:80) (cid:3)(cid:76) (cid:68)(cid:79) (cid:19)(cid:17)(cid:20)(cid:19) (cid:80) (cid:85) (cid:72) (cid:19)(cid:17)(cid:19)(cid:24) (cid:75) (cid:55) (cid:19)(cid:17)(cid:19)(cid:19) (cid:20)(cid:17)(cid:40)(cid:16)(cid:19)(cid:23) (cid:20)(cid:17)(cid:40)(cid:16)(cid:19)(cid:22) (cid:20)(cid:17)(cid:40)(cid:16)(cid:19)(cid:21) (cid:20)(cid:17)(cid:40)(cid:16)(cid:19)(cid:20) (cid:20)(cid:17)(cid:40)(cid:14)(cid:19)(cid:19) (cid:20)(cid:17)(cid:40)(cid:14)(cid:19)(cid:20) (cid:53)(cid:72)(cid:70)(cid:87)(cid:68)(cid:81)(cid:74)(cid:88)(cid:79)(cid:68)(cid:85)(cid:3)(cid:83)(cid:82)(cid:90)(cid:72)(cid:85)(cid:3)(cid:83)(cid:88)(cid:79)(cid:86)(cid:72)(cid:3)(cid:90)(cid:76)(cid:71)(cid:87)(cid:75)(cid:3)(cid:11)(cid:86)(cid:72)(cid:70)(cid:12) (cid:36)(cid:48)(cid:19)(cid:28)(cid:21)(cid:27)(cid:19)(cid:57)(cid:20) 6/19 DocID7076 Rev 10

SD2931-10 Transient thermal impedance Figure 3. Transient thermal impedance model (cid:38) (cid:39)(cid:76)(cid:86)(cid:86)(cid:76)(cid:83)(cid:68)(cid:87)(cid:72)(cid:71)(cid:51)(cid:82)(cid:90)(cid:72)(cid:85)(cid:66)(cid:58)(cid:68)(cid:87)(cid:87)(cid:86) (cid:53)(cid:20) (cid:38)(cid:20) (cid:53)(cid:32)(cid:19)(cid:17)(cid:19)(cid:21)(cid:22)(cid:3)(cid:50)(cid:75)(cid:80) (cid:38)(cid:32)(cid:17)(cid:19)(cid:19)(cid:21)(cid:19)(cid:28)(cid:26)(cid:27)(cid:3)(cid:41) (cid:53) (cid:38) (cid:53)(cid:21) (cid:38)(cid:21) (cid:53)(cid:32)(cid:17)(cid:19)(cid:26)(cid:21)(cid:3)(cid:50)(cid:75)(cid:80) (cid:38)(cid:32)(cid:17)(cid:19)(cid:19)(cid:21)(cid:20)(cid:27)(cid:22)(cid:21)(cid:3)(cid:41) (cid:53) (cid:38) (cid:53)(cid:22) (cid:38)(cid:22) (cid:53)(cid:32)(cid:17)(cid:21)(cid:19)(cid:19)(cid:3)(cid:50)(cid:75)(cid:80) (cid:38)(cid:32)(cid:17)(cid:19)(cid:21)(cid:23)(cid:23)(cid:26)(cid:24)(cid:27)(cid:3)(cid:41) (cid:53) (cid:38) (cid:53)(cid:23) (cid:38)(cid:23) (cid:53)(cid:32)(cid:17)(cid:20)(cid:24)(cid:24)(cid:3)(cid:50)(cid:75)(cid:80) (cid:38)(cid:32)(cid:17)(cid:21)(cid:19)(cid:24)(cid:26)(cid:22)(cid:26)(cid:22)(cid:3)(cid:41) (cid:36)(cid:48)(cid:19)(cid:28)(cid:21)(cid:27)(cid:20)(cid:57)(cid:20) DocID7076 Rev 10 7/19 19

Impedance data SD2931-10 4 Impedance data Figure 4. Impedance data D ZDL Typical Input Typical Drain Impedance Load Impedance G Zin S Table 7. Impedance data Freq Z (Ω) Z (Ω) IN DL 30 MHz 1.7 - j 5.7 6.8 + j 0.9 175 MHz 1.2 - j 2.0 2.0 + j 2.4 8/19 DocID7076 Rev 10

SD2931-10 Typical performance 5 Typical performance Figure 5. C a pacitance vs drain-source voltage Figure 6. Drain current vs gate voltage 10000 20 Tc=-20 °C E (pF) 1000 f =1MHz NT (A) 15 Tc=+25 °C C Ciss E N R A R ACIT Coss N CU 10 Tc=+80 °C C, CAP 100 D, DRAI 5 VDS = 10 V I Crss 10 0 0 10 20 30 40 50 2 2.5 3 3.5 4 4.5 5 5.5 6 VGS, GATE-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 7. Gate-source voltage vs case Figure 8. Maximum thermal resistance vs case temperature temperature ED) 1.12 Z LI 0.6 MA 1.08 Id =9A NOR 1.04 Id =10A Id =7AId =5A GE ( 1 Id =11A W)0.56 URCE VOLTA 00..9926 IdI d= 2=A4A RTH(j-c) (°C/0.52 E-SO 0.88 Vds= 10 V Id =.25A Id =1A 0.48 GAT 0.84 Id =.1A 0.44 S, 0.8 25 35 45 55 65 75 85 G V -25 0 25 50 75 100 Tc, CASE TEMPERATURE (°C) Tc, CASE TEMPERATURE (°C) Figure 9. Safe operating area 100 A) s( 10 d I (1) 1 1 10 100 1000 Vds(V) (1) Current in this area may be limited by Rds(on) DocID7076 Rev 10 9/19 19

Typical performance @ 175 MHz SD2931-10 6 Typical performance @ 175 MHz Figure 1 0 . Output power vs input power Figure 11. Output power vs input power 270 WER (W)122814000 VVdddd== 5400VV ER (W)222147000 Tc T=c- 2=0+ 2°C5 °C O W180 P150 O T P150 Tc =+80 °C U120 T OUTP 90 UTPU12900 Pout, 3600 fI=dq 1=7 52M50HmzA Pout, O 3600 VIfd=dq 1d=7= 25 55M00HVmzA 0 0 0 5 10 15 20 25 0 5 10 15 20 25 Pin, INPUT POWER (W) Pin, INPUT POWER(W) Figure 12. Power gain vs output power Figure 13. Efficiency vs output power 18 80 dB)16 %)70 N (14 Y (60 AI C G N ER 12 CIE50 W FI Gp, PO108 VIddqd==25500VmA Nd, EF3400 VIddqd==25500VmA f=175Mhz f=175Mhz 6 20 0 50 100 150 200 250 0 50 100 150 200 250 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) Figure 14 . Output power vs supply voltage Figure 15. Drain current vs gate-source voltage 270 20 240 Pin =10W Tc=-20 °C WER(W) 128100 Pin =5W ENT (A) 15 Tc=+25 °C O R P 150 R UT Pin =2.5W CU 10 Tc=+80 °C P 120 N UT AI O 90 R Pout, 60 ID, D 5 Idq= 250mA 30 f= 175MHz 0 0 24 28 32 36 40 44 48 52 2 2.5 3 3.5 4 4.5 5 5.5 6 Vdd,DRAIN VOLTAGE(V) VGS, GATE-SOURCE VOLTAGE (V) 10/19 DocID7076 Rev 10

SD2931-10 Test circuit 7 Test circuit Figure 16. 175 MHz schematic (production test circuit) Note: All dimensions in inches REF. 1021579C Table 8. Component part list Component Description T1 4:1 transformer, 25 ohm flexible coax .090 OD 6” long T2 1:4 transformer, 25 ohm semi-rigid coax .141 OD 6” long FB1 Toroid X 2, 0.5” OD .312” ID 850μ 2 turns FB2, FB3 VK200 FB4 Shield bead, 1” OD 0.5” ID 850μ 3 turns L1 1/4 wave choke, 50 ohm semi-rigid coax .141 OD 12” Long PCB 0.62” woven fiberglass, 1 oz. copper, 2 sides, εr = 2.55 R1, R3 470 ohm 1 W chip resistor R2 360 ohm 1/2 W resistor R4 20 Kohm 10 turn potentiometer R5 560 ohm 1 W resistor C1, C11 470 pF ATC chip cap C2 43 pF ATC chip cap C3, C8, C9 Arco 404, 12-65 pF C4 Arco 423, 16-100 pF DocID7076 Rev 10 11/19 19

Test circuit SD2931-10 Table 8. Component part list (continued) Component Description C5 120 pF ATC chip cap C6 0.01 μF ATC chip cap C7 30 pF ATC chip cap C10 91 pF ATC chip cap C12, C15 1200 pF ATC chip cap C13, C14,C16, C17 0.01 μF / 500 V chip cap C18 10 μF 63 V electrolytic capacitor Figure 17. 175 MHz test circuit photomaster s e h c n 4 i 6.4 inches Figure 18. 175 MHz test circuit 12/19 DocID7076 Rev 10

SD2931-10 Typical performance @ 30 MHz 8 Typical performance @ 30 MHz Figure 1 9 . Output power vs input power Figure 20. Power gain vs output power W)250 30 R ( Vdd = 50 V B) WE200 N (d29 UTPUT PO110500 Vdd = 40 V OWER GAI222678 f = 30 MHz out, O 50 fI D=Q 3 0= M25H0z mA PG, P25 VIDDQD = = 2 5500 VmA P 0 24 0 0.1 0.2 0.3 0.4 0.5 0 40 80 120 160 200 Pin, INPUT POWER (W) Pout, OUTPUT POWER (W) Figure 21. Efficiency vs output power Figure 22. Output power vs supply voltage 70 200 Pin=.31 W 60 %)50 150 Pin=.22 W cy (40 W) Efficien2300 fV =D D30 = M 5H0z V Pout(100 Pin=.13 W IDQ = 250 mA f = 30 MHz 10 50 IDQ = 250 mA 0 0 40 80 120 160 200 0 Pout, OUTPUT POWER (W) 24 28 32 36 40 44 48 52 VDD(V) Figure 2 3 . Output power vs gate voltage W)200 R ( T= +25 °C T= -20 °C E W150 O P T U T= +80 °C P100 T U O VDD = 50 V ut, 50 IDQ = 250 mA Po f = 30 MHz Pin = Constant 0 0 1 2 3 4 5 6 VGS GATE-SOURCE VOLTAGE (V) DocID7076 Rev 10 13/19 19

Test circuit @ 30 MHz SD2931-10 9 Test circuit @ 30 MHz Figure 24. 30 MHz test circuit schematic (engineering test circuit) Figure 25. 30 MHz test circuit part list Symbol Description T1 9:1 transformer, 25 Ω flexible coax with extra shield .090 OD 15” long T2 1:4 transformer, 50 Ω flexible coax .225 OD 15” long FB1 Toroid 1.7” OD .30” ID 220 μ 4 turns FB2 Surface mount EMI shield bead FB3 Toroid 1.7” OD .300” ID 220μ 3 turns RFC1 Toroid 0.5” OD 0.30” ID 125μ 4 turns 12 awg wire PCB 0.62” woven fiberglass, 1 oz. Copper, 2 Sides, εr = 2.55 R1, R3 1 KΩ 1 W chip resistor R2 680 Ω 3 W wirewound resistor C1,C4,C6,C7,C8, 0.1 μF ATC chip cap C9, C11,C12,C13 C2, C3 750 pF ATC chip cap C5 470 pF ATC chip cap C10 10 μF 63 V electrolytic capacitor C14 100 μF 63 V electrolytic capacitor 14/19 DocID7076 Rev 10

SD2931-10 Package information 10 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Figure 26. M174 (0.500 DIA 4/L N/HERM W/FLG) package outline Controlling Dimension: Inches 1011000D DocID7076 Rev 10 15/19 19

Package information SD2931-10 Table 9. M174 (0.500 DIA 4/L N/HERM W/FLG) package mechanical data mm. Inch Dim. Min Typ Max Min Typ Max A 5.56 5.584 0.219 0.230 B 3.18 0.125 C 6.22 6.48 0.245 0.255 D 18.28 18.54 0.720 0.730 E 3.18 0.125 F 24.64 24.89 0.970 0.980 G 12.57 12.83 0.495 0.505 H 0.08 0.18 0.003 0.007 I 2.11 3.00 0.083 0.118 J 3.81 4.45 0.150 0.175 K 7.11 0.280 L 25.53 26.67 1.005 1.050 M 3.05 3.30 0.120 0.130 16/19 DocID7076 Rev 10

SD2931-10 Marking, packing and shipping specifications 11 Marking, packing and shipping specifications Table 10. Packing and shipping specifications Pcs per Dry pack Order code Packaging V Lot code tray humidity GS SD2931-10W Plastic tray 25 < 10 % Not mixed Not mixed Figure 27. Marking drawing Table 11. Marking specifications Symbol Description W Wafer process code X V sort GS CZ Assembly plant xxx Last 3 digit of diffusion lot VY Diffusion plant MAR County of origin CZ Test and finishing plant y Assembly year yy Assembly week DocID7076 Rev 10 17/19 19

Revision history SD2931-10 12 Revision history Table 12. Document revision history Date Revision Changes 09-Sep-2004 4 17-Jun-2004 5 Updated Table5: Dynamic on page4 Updated Table4: Static (per side), Table5: Dynamic and Table6: 04-Mar-2008 6 VGS sorts on page5 08-Feb-2011 7 Inserted Chapter11: Marking, packing and shipping specifications. 12-Jan-2012 8 Inserted Chapter3: Transient thermal impedance. 19-Dec-2012 9 Updated Table10: Packing and shipping specifications 14-Jul-2016 10 Updated V value in Table2: Absolute maximum ratings. GS 18/19 DocID7076 Rev 10

SD2931-10 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID7076 Rev 10 19/19 19