SD2918 RF power transistor HF/VHF/UHF n-channel MOSFETs Features ■ Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ P = 30 W min. with 18 dB gain @ 30 MHz OUT Description The SD2918 is a n-channel MOS field-effect RF M113 Epoxy sealed power transistor. It is intended for use in 50 V dc large signal applications up to 200 MHz. Figure 1. Pin connection 4 1 1. Drain 3 2 2. Source 4. Source 3. Gate Table 1. Device summary Order code Marking Package Packaging SD2918 SD2918 M113 Plastic tray November 2009 Doc ID 6866 Rev 2 1/14 www.st.com 14

Contents SD2918 Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Test circuit and BOM list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 Doc ID 6866 Rev 2

SD2918 Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (T = 25 °C) CASE Symbol Parameter Value Unit V Drain source voltage 125 V (BR)DSS V Drain-gate voltage (R = 1 MΩ) 125 V DGR GS V Gate-source voltage ± 20 V GS I Drain current 6 A D P Power dissipation 175 W DISS T Max. operating junction temperature 200 °C J T Storage temperature -65 to +150 °C STG 1.2 Thermal data Table 3. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 1.0 thJ-C °C/W R Junction-heatsink thermal resistance(1) 0.3 thC-S 1. Determined using a flat aluminum or copper heatsink with thermal compound applied (dow corning 340 or equivalent). Doc ID 6866 Rev 2 3/14

Electrical characteristics SD2918 2 Electrical characteristics T = +25 oC CASE 2.1 Static Table 4. Static Symbol Test conditions Min Typ Max Unit V V = 0 V I = 10 mA 125 V (BR)DSS GS DS I V = 0 V V = 50 V 1.0 mA DSS GS DS I V = 20 V V = 0 V 1 µA GSS GS DS V V = 10 V I = 10 mA 1.0 5.0 V GS(Q) DS D V V = 10 V I = 2.5 A 5.0 V DS(ON) GS D g V = 10 V I = 2.5 A 0.8 mho FS DS D C V = 0 V V = 50 V f = 1 MHz 58 pF ISS GS DS C V = 0 V V = 50 V f = 1 MHz 35.5 pF OSS GS DS C V = 0 V V = 50 0 V f = 1 MHz 7.5 pF RSS GS DS 2.2 Dynamic Table 5. Dynamic Symbol Test conditions Min Typ Max Unit P V = 50 V, I = 100 mA, f = 30 MHz, P = 0.475 W 30 W OUT DD DQ IN G V = 50 V, I = 100 mA, f = 30 MHz, P = 30 W 18 22 - dB PS DD DQ out h V = 50 V, I = 100 mA, f = 30 MHz, P = 30 W 50 55 % D DD DQ out Load VDD = 50 V, IDQ = 100 mA, f = 30 MHz, Pout= 30 W 30:1 - VSWR mismatch All phase angles 4/14 Doc ID 6866 Rev 2

SD2918 Impedance data 3 Impedance data Figure 2. Impedance data D Z DL Typical Input Typical Drain Impedance Load Impedance G Zin S Table 6. Impedance data Freq Z (Ω) Z (Ω) IN DL 30 MHz 24.4 - j 13.4 28.8 + j 7.2 Doc ID 6866 Rev 2 5/14

Typical performances SD2918 4 Typical performances Figure 3. C apacitance vs drain-source Figure 4. Maximum thermal resistance vs voltage case temperature Figure 5. D rain current vs gate voltage Figure 6. Gate-source voltages vs case temperature Figure 7. Output power vs input power Figure 8. Output power vs input power at different T C 6/14 Doc ID 6866 Rev 2

SD2918 Typical performances Figure 9. Output power vs supply voltage Figure 10. Output power vs gate voltage Figure 11. Power gain and efficiency vs output power Doc ID 6866 Rev 2 7/14

Test circuit and BOM list SD2918 5 Test circuit and BOM list Figure 12. 30 MHz test circuit schematic VB +50V + + RF INPUT RF OUTPUT Table 7. Bill of material Component Part n. Supplier Description 100 Ω, 1 W surface mount chip R4 CR2512-1W-101JB VENKEL resistor 160 Ω, 1 W carbon film axial-lead R3 29SJ901 XICON resistor 160 Ω, 1 W carbon film axial-lead R2 29SJ901 XICON resistor R1 CR2512-1W-3R9JT VENKEL 3.9 Ω, 1 W surface mount chip resistor FB3 2843000102 FAIR-RITE CORP. Multi-aperture core FB2 2743021447 FAIR-RITE CORP. Shield bead surface mount EMI FB1 2743021447 FAIR-RITE CORP. Shield bead surface mount EMI Inductor, 3 turns air wound #14AWG, L3 8073 BELDEN ID= 0.375[9.53], poly coated magnet wire Inductor, 7 turns around shield bead L2 1557 ALPHA (PT# Fair-rite 2643801102) #16AWG hook up wire. Inductor, 4 turns air wound #14AWG, L1 8073 BELDEN ID= 0.375[9.53], poly coated magnet wire 8/14 Doc ID 6866 Rev 2

SD2918 Test circuit and BOM list Table 7. Bill of material (continued) Component Part n. Supplier Description 10 µF/160 V axial-lead aluminium C10 SKA100M160 MALLORY electrolytic capacitor 0.01 µF/500 V surface mount ceramic C9 C1812X7R501-103KNE VENKEL chip capacitor 0.01 µF/500 V surface mount ceramic C8 C1812X7R501-103KNE VENKEL chip capacitor 0.01 µF/500 V surface mount ceramic C7 C1812X7R501-103KNE VENKEL chip capacitor 10 µF/50 V vertical surface mount C6 RVS-50V100M-R ELNA chip aluminium electrolytic capacitor 0.01 µF/500 V surface mount ceramic C5 C1812X7R501-103KNE VENKEL chip capacitor 10000 pF ATC 200B surface mount C4 ATC200B103KW50X ATC ceramic chip capacitor 20-180 pF type ST46 standard 3 C3 463 ARCO turns variable capacitor 10000 pF ATC 200B surface mount C2 ATC200B103KW50X ATC ceramic chip capacitor 10000 pF ATC 200B surface mount C1 ATC200B103KW50X ATC ceramic chip capacitor Transformer: 4:9, 75.0 Ω, o.d. 0.090 1” LG. coaxial cable 5 turns around T2 shield bead (PT#2643801002 FAIR- RITE CORP.) Transformer: 9:4, 75.0 Ω, o.d. 0.090 1” LG. coaxial cable 5 turns around T1 shield bead (PT#2643801002 FAIR- RITE CORP.) Woven fiberglass reinforced PTFE ε PCB G0300M1026 ROGERS CORP. 0.030” THK, = 2.55, 2Oz ED Cu r both sides Doc ID 6866 Rev 2 9/14

Circuit layout SD2918 6 Circuit layout Figure 13. 30 MHz test circuit photomaster REF. 7143542A Figure 14. 30 MHz production test fixture 10/14 Doc ID 6866 Rev 2

SD2918 Package mechanical data 7 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 6866 Rev 2 11/14

Package mechanical data SD2918 T able 8. M113 (.380 DIA 4/L N/HERM W/FLG) mechanical data mm. Inch Dim. Min Typ Max Min Typ Max A 5.59 5.84 0.220 0.230 B 19.81 20.83 0.780 0.820 C 18.29 18.54 0.720 0.730 D 24.64 24.89 0.970 0.980 E 9.40 9.78 0.370 0.385 F 0.10 0.15 0.004 0.006 G 2.16 2.67 0.085 0.105 H 4.06 4.57 0.160 0.180 I 7.14 0.281 J 6.22 6.48 0.245 0.255 K 3.05 3.30 0.120 0.130 Figure 15. Package dimensions Controlling dimensions: inches 1010936D 12/14 Doc ID 6866 Rev 2

SD2918 Revision history 8 Revision history Table 9. Document revision history Date Revision Changes 21-Jun-2004 1 First release 05-Nov-2009 2 Updated marking on Table1. Doc ID 6866 Rev 2 13/14

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