SD1440 Silicon Phototransistor FEATURES • Compact, metal can coaxial package • 24¡ (nominal) acceptance angle • Wide sensitivity ranges • Wide operating temperature range ( 55¡C to +125¡C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes INFRA-63.TIF DESCRIPTION OUTLINE DIMENSIONSin inches (mm) The SD1440 is an NPN silicon phototransistor mounted Tolerance 3 plc decimals ±0.005(0.12) in a glass lensed metal can coaxial package. The 2 plc decimals ±0.020(0.51) package may have a tab or second lead welded to the can as an optional feature (SD1440-XXXL). Both leads are flexible and may be formed to fit various mounting SD1440-XXX configurations. .091(2.26) EMITTER COLLECTOR .020(0.51) DIA .062(1.57) DIA ~~ ..007769((12..9031)) DIA .010(0.25) .095(2.41)DIA .122(3.10) .106(2.69) 1.000(25.40) MIN DIM_12a.ds4 SD1440-XXXL .091(2.26) .020 (0.51)DIA EMITTER ~~ COLLECTOR ~~ .020 .062(1.57) DIA ~~ (0.51)DIA ..007769((12..9031)) DIA .010(0.25) .095(2.41)DIA .122(3.10) .106(2.69) 1.000(25.40) TYPICAL MIN DIM_12b.ds4 h Honeywell reserves the right to make 100 changes in order to improve design and supply the best products possible.

SD1440 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Power Dissipation 75 mW [À] Operating Temperature Range -55¡C to 125¡C Storage Temperature Range -65¡C to 150¡C Soldering Temperature (10 sec) 260¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.71 mW/¡C. Honeywell reserves the right to make h changes in order to improve design and 101 supply the best products possible.

SD1440 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT SWITCHING WAVEFORM cir_015.cdr cir_004.cdr Fig. 1 Responsivity vs Fig. 2 Collector Current vs Angular Displacement gra_051.ds4 Ambient Temperature gra_039.ds4 1.0 2.0 0.9 e 0.8 ro 1.6 lit rvsseaeepon 00000.....34567 li lltzccaedoemt rrcuen 01..82 R 0.2 roN 0.4 0.1 0.0 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 0 10 20 30 40 50 60 70 80 Angular displacement - degrees Ambient temperature - °C Fig. 3 Dark Current vs Fig. 4 Non-Saturated Switching Time vs Temperature gra_303.cdr Load Resistance gra_041.ds4 100 s µ - e m i te 10 s n o p s e R 1 10 100 1000 10000 Load resistance - Ohms h Honeywell reserves the right to make 102 changes in order to improve design and supply the best products possible.

SD1440 Silicon Phototransistor Fig. 5 Spectral Responsivity Fig. 6 Coupling Characteristics gra_036.ds4 with SE1450 gra_006.ds4 1.0 1.0 0.9 lit rvsseaeeponeR 0000000.......2345678 lilir t zoaedghNmrrt cuen 0000....2468 0.1 0.0 400 600 800 1000 1200 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Wavele ngth - nm Lens-to-lens separation - inches All Performance Curves Show Typical Values Honeywell reserves the right to make h changes in order to improve design and 103 supply the best products possible.