SD103A, SD103B, SD103C www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications • Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems • These diodes are also available in the SOD-123 and SOD-323 case with type designations SD103AW(S) to SD103CW(S), and in the MiniMELF case with type DESIGN SUPPORT TOOLS click logo to get started designations LL103A thru LL103C • For general purpose applications Models • AEC-Q101 qualified Available • Material categorization: for definitions of compliance MECHANICAL DATA please see www.vishay.com/doc?99912 Case: DO-35 (DO-204AH) APPLICATIONS Weight: approx. 125 mg • HF-detector Cathode band color: black • Protection circuit Packaging codes/options: • Small battery charger TR/10K per 13" reel (52 mm tape), 50K/box • AC/DC, DC/DC converters TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE TYPE CIRCUIT PART ORDERING CODE TYPE MARKING REMARKS DIFFERENTIATION CONFIGURATION SD103A V = 40 V SD103A-TR or SD103A-TAP SD103A Single Tape and reel/ammopack R SD103B V = 30 V SD103B-TR or SD103B-TAP SD103B Single Tape and reel/ammopack R SD103C V = 20 V SD103C-TR or SD103C-TAP SD103C Single Tape and reel/ammopack R ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT SD103A V 40 V R Peak inverse voltage SD103B V 30 V R SD103C V 20 V R Power dissipation (infinite heat sink) (1) P 400 mW tot Peak forward surge current t = 300 μs square pulse I 15 A p FSM Note (1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air (1) R 310 K/W thJA Junction temperature T 125 °C j Storage temperature range T -55 to +150 °C stg Note (1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Rev. 1.9, 01-Jun-17 1 Document Number: 85754 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SD103A, SD103B, SD103C www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT SD103A V 40 V (BR) Reverse breakdown voltage I = 50 μA SD103B V 30 V R (BR) SD103C V 20 V (BR) V = 30 V SD103A I 5 μA R R Leakage current V = 20 V SD103B I 5 μA R R V = 10 V SD103C I 5 μA R R I = 20 mA V 370 mV F F Forward voltage drop I = 200 mA V 600 mV F F Diode capacitance V = 0 V, f = 1 MHz C 50 pF R D I = I = 50 mA to 200 mA, Reverse recovery time F R t 10 ns recover to 0.1 I rr R TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb 1000 10 000 100 mA) µA) 1000 nt ( 10 nt ( e e urr urr d C 1 e C 100 war ers or 0.1 ev F R I - F 0.01 I - R 10 0.001 1 0 100 200 300 400 500 600 700 800900 1000 0 20 40 60 80 100 120 140 160 16765 V - Forward Voltage (mV) 16767 T - Junction Temperature (°C) F j Fig. 1 - Forward Current vs. Forward Voltage Fig. 3 - Reverse Current vs. Junction Temperature 5 30 f = 1 MHz urrent (A) 34 citance (pF) 2205 C a ard Cap 15 w 2 e or d 10 F o I - F 1 C - DiD 5 0 0 0.0 0.5 1.0 1.5 2.0 0 5 10 15 20 25 30 16766 V - Forward Voltage (V) 16768 V - Reverse Voltage (V) F R Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 1.9, 01-Jun-17 2 Document Number: 85754 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SD103A, SD103B, SD103C www.vishay.com Vishay Semiconductors 25 A) 20 RepetitveCurrent ( 15 Non urge Typ. ard S 10 I - totForw 5 0 0.1 1.0 10.0 16769 t - Pulse width (ms) P Fig. 5 - Typical Non-Repetitive Forward Surge Current vs. Pulse Width PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) Cathode Identification 6 max. [0.024] 4 min. [0.015] 26 min. [1.024] 33..91 mmainx.. [[00..112504]] 26 min. [1.024] 1.7 [0.067] 1.3 [0.050] 0. 0. Ø Ø Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.9, 01-Jun-17 3 Document Number: 85754 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: SD103A-TR SD103B-TR SD103C-TR SD103A-TAP SD103B-TAP SD103C-TAP