SBYV27-50, SBYV27-100, SBYV27-150, SBYV27-200 www.vishay.com Vishay General Semiconductor Soft Recovery Ultrafast Plastic Rectifier FEATURES • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability DO-204AC (DO-15) • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for I 2.0 A F(AV) consumer, computer and telecommunication. V 50 V, 100 V, 150 V, 200 V RRM IFSM 50 A MECHANICAL DATA trr 15 ns Case: DO-204AC (DO-15) V 0.88 V Molding compound meets UL 94 V-0 flammability rating F Base P/N-E3 - RoHS-compliant, commercial grade T max. 150 °C J Package DO-204AC (DO-15) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Diode variations Single die E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL SBYV27-50 SBYV27-100 SBYV27-150 SBYV27-200 UNIT Maximum repetitive peak reverse voltage V 50 100 150 200 V RRM Maximum RMS voltage V 35 70 105 140 V RMS Maximum DC blocking voltage V 50 100 150 200 V DC Minimum reverse breakdown voltage at 100 μA V 55 110 165 220 V BR Maximum average forward rectified current I 2.0 A 0.375" (9.5 mm) lead length at T = 85 °C F(AV) L Peak forward surge current 10 ms single half I 50 A sine-wave superimposed on rated load FSM Operating junction and storage temperature range T , T - 55 to + 150 °C J STG Revision: 15-Aug-13 1 Document Number: 88736 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SBYV27-50, SBYV27-100, SBYV27-150, SBYV27-200 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL SBYV27-50 SBYV27-100 SBYV27-150 SBYV27-200 UNIT Maximum TJ = 25 °C 1.07 instantaneous 3.0 A VF (1) V forward voltage T = 150 °C 0.88 J Maximum DC reverse TA = 25 °C 5.0 current at rated DC I μA R blocking voltage T = 100 °C 200 A Maximum reverse I = 0.5 A, I = 1.0 A, I = 0.25 A t 15 ns recovery time F R rr rr Typical junction 4.0 V, 1 MHz C 15 pF capacitance J Note (1) Pulse test: 300 μs pulse width, duty cycle 2 % THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL SBYV27-50 SBYV27-100 SBYV27-150 SBYV27-200 UNIT Typical thermal resistance R (1) 45 °C/W JA Note (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SBYV27-200-E3/54 0.404 54 4000 13" diameter paper tape and reel SBYV27-200-E3/73 0.404 73 2000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 3.0 60 A) TJ = 150 °C urrent ( 2.5 0R.3e7sT5isL" t Li(v9ee.a5 do m rT Imenmd) uLpceetariavdte uL Lreeonagdth ent (A) 50 10 ms Single Half Sine-Wave ed C 2.0 Curr 40 Rectifi 1.5 Surge 30 d d ar ar w 1.0 w 20 or or F T, Ambient Temperature F verage 0.5 0.47A" x P0C..4Co7.Bp" p.( 1eM2r o Pmuanmdtse xd 12 mm) Peak 10 A 0 0 0 25 50 75 100 125 150 175 1 10 100 Temperature (°C) Number of Cycles at 50 Hz Fig. 1 - Maximum Forward Current Derating Curves Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 15-Aug-13 2 Document Number: 88736 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SBYV27-50, SBYV27-100, SBYV27-150, SBYV27-200 www.vishay.com Vishay General Semiconductor 100 60 I = 2.0 A ward Current (A) 10 TJ = 150 °C Change/Reverseme, nC/ns 4500 VFR = 30 V ddddII//IIdd//ddtt tt== == 11 25500000 AAAA////μμμμssss Instantaneous For 0.11 TJ = 125 °C TJ = 25 °TCJ = 100 °C Recovered Store Recovery Ti 123000 ddddII//IIdd//ddtt tt== == 11 25500000 QAAtAArr////μμμμssss rr 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 25 50 75 100 125 150 175 Instantaneous Forward Voltage (V) Junction Temperature (°C) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Reverse Switching Charateristics 10 000 100 T = 25 °C J e f = 1.0 MHz kag 1000 )F Vsig = 50 mVp-p a T = 150 °C p Le J ( e ous Reverse Current (μA) 11000 TJ = T1J2 =5 1°C00 °C cnaticapaC n 10 e o stantan 1 itcnuJ In TJ = 25 °C 0.1 1 0 20 40 60 80 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. Revision: 15-Aug-13 3 Document Number: 88736 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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