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  • 型号: SBR02U30LP-7
  • 制造商: Diodes Inc.
  • 库位|库存: xxxx|xxxx
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SBR02U30LP-7产品简介:

ICGOO电子元器件商城为您提供SBR02U30LP-7由Diodes Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供SBR02U30LP-7价格参考以及Diodes Inc.SBR02U30LP-7封装/规格参数等产品信息。 你可以下载SBR02U30LP-7参考资料、Datasheet数据手册功能说明书, 资料中有SBR02U30LP-7详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE SUP BARRIER 30V 0.2A 2DFN肖特基二极管与整流器 SUPER BARRIER REC 0.2A,30V,ULTRA LO VF

产品分类

单二极管/整流器分离式半导体

品牌

Diodes Incorporated

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,肖特基二极管与整流器,Diodes Incorporated SBR02U30LP-7SBR®

数据手册

点击此处下载产品Datasheet

产品型号

SBR02U30LP-7

RoHS指令信息

http://diodes.com/download/4349

不同If时的电压-正向(Vf)

480mV @ 200mA

不同 Vr、F时的电容

-

不同 Vr时的电流-反向漏电流

50µA @ 30V

二极管类型

超级势垒

产品

Schottky Rectifiers

产品培训模块

http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=13401

产品目录页面

点击此处下载产品Datasheet

产品种类

肖特基二极管与整流器

供应商器件封装

2-DFN1006(1.0x0.6)

其它名称

SBR02U30LP-7DICT

包装

剪切带 (CT)

反向恢复时间(trr)

-

商标

Diodes Incorporated

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

2-UFDFN

封装/箱体

DFN-2

峰值反向电压

30 V

工作温度-结

-65°C ~ 150°C

工作温度范围

- 65 C to + 150 C

技术

Silicon

最大反向漏泄电流

50 uA

最大工作温度

+ 150 C

最大浪涌电流

5 A

最小工作温度

- 65 C

标准包装

1

正向电压下降

0.48 V

正向连续电流

0.2 A

热阻

18°C/W Jl

电压-DC反向(Vr)(最大值)

30V

电流-平均整流(Io)

200mA

速度

小信号 =< 200mA(Io),任意速度

配置

Single

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PDF Datasheet 数据手册内容提取

SBR02U30LP 0.2A SBR SUPER BARRIER RECTIFIER Features Mechanical Data  Ultra Low Forward Voltage  Case: X1-DFN1006-2  Excellent High Temperature Stability  Case Material: Molded Plastic, “Green” Molding Compound.  Patented Super Barrier Rectifier Technology UL Flammability Classification Rating 94V-0  Soft, Fast Switching Capability  Moisture Sensitivity: Level 1 per J-STD-020  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Terminals: Finish - NiPdAu over Copper Leadframe.  Halogen and Antimony Free. “Green” Device (Note 3) Solderable per MIL-STD-202, Method 208 e 4  Qualified to AEC-Q101 Standards for High Reliability  Weight: 0.001 grams (Approximate) Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging SBR02U30LP-7 X1-DFN1006-2 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 23 From date code 1527 (YYWW), 23 this changed to: Top View Top View Dot Denotes Cathode Side Bar Denotes Cathode Side SBR02U30LP-7 23 23 F 23 23 23 23 23 = Product Type Marking Code SBR is a registered trademark of Diodes Incorporated S BR02U30LP 1 of 5 January 2016 Document number: DS31715 Rev. 4 - 2 www.di odes.com © Diodes Incorporated

SBR02U30LP Maximum Ratings (@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 30 V DC Blocking Voltage VRM Average Rectified Output Current (See Figure 1) IO 0.2 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 5.0 A Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Thermal Resistance Junction to Soldering (Note 5) RJS 18 °C/W Thermal Resistance Junction to Ambient (Note 6) RJA 263 Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition 0.34 0.40 IF = 0.1A, TJ = +25°C Forward Voltage Drop VF - - 0.48 V IF = 0.2A, TJ = +25°C 0.39 0.45 IF = 0.2A, TJ = 125°C Leakage Current (Note 7) IR - 04.5 5100 mµAA VVRR == 3300VV,, TTJJ == ++2152°5C°C Notes: 5. Theoretical RJS calculated from the top center of the die straight down to the PCB cathode tab solder junction. 6. FR-4 PCB, 2oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf. 7. Short duration pulse test used to minimize self-heating effect. SBR02U30LP 2 of 5 January 2016 Document number: DS31715 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

SBR02U30LP 0.6 10 A) T ( W) 0.5 REN 1 N ( UR TIO 0.4 D C 0.1 A R P A SI W S 0.3 R 0.01 DI O ER S F W U O 0.2 O 0.001 E P N P, D TA N 0.1 A 0.0001 T S N 0 , IF 0.00001 0 0.2 0.4 0.6 0.8 1 I 0 200 400 600 800 1,000 I , AVERAGE FORWARD CURRENT (A) V , INSTANTANEOUS FORWARD VOLTAGE (mV) F(AV) F Fig. 1 Forward Power Dissipation Fig. 2 Typical Forward Characteristics 100,000 1,000 A) µ T ( EN F) R p R 10,000 E ( U C C N 100 E A S T R CI E A EV 1,000 AP R C S L U A ANEO 100 , TOTT 10 T C N A T S N , IR 10 1 I 0 10 20 30 40 50 60 0.1 1 10 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, DC REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics Fig. 4 Total Capacitance vs. Reverse Voltage 0.25 150 C) NT(A) NNoottee 36 RE (° 125 E 0.2 U R AT R R CU PE 100 D 0.15 M R E A T W T R N 75 O E F BI E 0.1 M G A A D 50 R E E T V A A 0.05 R , V) DE 25 F(A , A I T 0 0 0 25 50 75 100 125 150 175 200 0 3 6 9 12 15 18 21 24 27 30 T , AMBIENT TEMPERATURE (°C) V , DC REVERSE VOLTAGE (V) A R Fig. 5 Forward Current Derating Curve Fig. 6 Operating Temperature Derating SBR02U30LP 3 of 5 January 2016 Document number: DS31715 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

SBR02U30LP Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. A X1-DFN1006-2 A1 Dim Min Max Typ A 0.47 0.53 0.50 D A1 0 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 R E 0.55 0.675 0.60 E b e - - 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm L e Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. X1 X Dimensions Value (in mm) C 0.70 G 0.30 X 0.40 Y X1 1.10 Y 0.70 G C SBR02U30LP 4 of 5 January 2016 Document number: DS31715 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

SBR02U30LP IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com SBR02U30LP 5 of 5 January 2016 Document number: DS31715 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

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