ICGOO在线商城 > 分立半导体产品 > 二极管 - 整流器 - 单 > SB140E-G
数量阶梯 | 香港交货 | 国内含税 |
+xxxx | $xxxx | ¥xxxx |
查看当月历史价格
查看今年历史价格
SB140E-G产品简介:
ICGOO电子元器件商城为您提供SB140E-G由COMCHIP TECHNOLOGY设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SB140E-G价格参考¥询价-¥询价。COMCHIP TECHNOLOGYSB140E-G封装/规格:二极管 - 整流器 - 单, 肖特基 通孔 二极管 40V 1A DO-41。您可以下载SB140E-G参考资料、Datasheet数据手册功能说明书,资料中有SB140E-G 详细功能的应用电路图电压和使用方法及教程。
Comchip Technology生产的SB140E-G是一款肖特基整流二极管,属于二极管 - 整流器 - 单类别。其应用场景主要包括以下几个方面: 1. 电源电路中的整流: SB140E-G常用于将交流电(AC)转换为直流电(DC)的整流电路中,例如开关电源、适配器和充电器等设备。它具有低正向压降(典型值约为0.3V),能够提高电源转换效率,降低发热。 2. 续流保护电路: 在开关电源、电机驱动和逆变器等电路中,SB140E-G可用作续流二极管,防止感性负载(如线圈或电机)在断开时产生反向电动势对电路造成损害。 3. 太阳能光伏系统: 该型号的二极管可用于太阳能电池板的旁路保护电路中,避免因阴影遮挡或其他异常情况导致的电流倒流,从而保护太阳能模块的正常运行。 4. 高频应用: SB140E-G具备较快的反向恢复时间(典型值为4μs),适合高频开关电路,如DC-DC转换器和脉宽调制(PWM)控制器等场景。 5. 汽车电子设备: 在汽车电子领域,该二极管可用于车载充电器、LED驱动电路以及各种传感器信号调理电路中,提供高效的整流功能。 6. 消费类电子产品: SB140E-G广泛应用于便携式设备(如手机、平板电脑)的充电器和USB接口电路中,确保稳定的直流输出。 7. 工业控制与自动化: 在工业控制系统中,这款二极管可用于信号隔离、电压箝位以及保护敏感元件免受浪涌电流冲击。 综上所述,SB140E-G凭借其高可靠性、低功耗和快速响应的特点,在电力电子、通信设备、家用电器及工业自动化等领域有着广泛的应用。
参数 | 数值 |
产品目录 | |
描述 | DIODE SCHOTTKY 40V 1A DO41肖特基二极管与整流器 Low VF ESD 1A 40V Schottky Rectifier |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | Comchip Technology |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,肖特基二极管与整流器,Comchip Technology SB140E-G- |
数据手册 | |
产品型号 | SB140E-G |
不同If时的电压-正向(Vf) | 500mV @ 1A |
不同 Vr、F时的电容 | - |
不同 Vr时的电流-反向漏电流 | 500µA @ 40V |
二极管类型 | |
产品 | Schottky Rectifiers |
产品培训模块 | http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=19180 |
产品目录页面 | |
产品种类 | 肖特基二极管与整流器 |
供应商器件封装 | DO-41 |
其它名称 | 641-1410-1 |
包装 | 剪切带 (CT) |
反向恢复时间(trr) | - |
商标 | Comchip Technology |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Reel |
封装/外壳 | DO-204AL,DO-41,轴向 |
封装/箱体 | DO-41 |
峰值反向电压 | 40 V |
工作温度-结 | -65°C ~ 125°C |
工厂包装数量 | 5000 |
技术 | Silicon |
最大反向漏泄电流 | 0.5 mA |
最大浪涌电流 | 30 A |
标准包装 | 1 |
正向电压下降 | 0.5 V |
正向连续电流 | 1 A |
热阻 | 80°C/W Ja |
电压-DC反向(Vr)(最大值) | 40V |
电流-平均整流(Io) | 1A |
系列 | SB140E |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
ESD Leaded Schottky Barrier Rectifiers SB120E-G Thru. SB1100E-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device Features DO-41 -Low drop down voltage. -1.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free 1.0(25.4) Min. 0.106(2.7) wheeling and polarity protection. 0.079(2.0) -Silicon epitaxial planar chips. -ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) 0.205(5.2) 0.160(4.1) -Lead-free part, meet RoHS requirements. Mechanical data 1.0(25.4) Min. -Epoxy: UL94-V0 rated flame retardant 0.034(0.86) -Case: Molded plastic body DO-41 0.001(0.70) -Terminals: Solderable per MIL-STD-750 Method 2026 -Polarity: Color band denotes cathode end Dimensions in inches and (millimeter) -Mounting Position: Any -Weight: 0.34 grams Maximum Rating and Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol SB SB SB SB SB SB SB Unit 120E-G 140E-G 145E-G 150E-G 160E-G 180E-G 1100E-G Maximum recurrent peak reverse voltage VRRM 20 40 45 50 60 80 100 V Maximum RMS voltage VRMS 14 28 30 35 42 56 70 V Maximum DC blocking voltage VDC 20 40 45 50 60 80 100 V Maximum average forward rectified current I(AV) 1.0 A 0.375” (9.5mm) lead length at TA=75°C, See Figure 1 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load IFSM 30 A (JEDEC method) TL=110°C Maximum forward voltage at 1.0A (Note 1) VF 0.50 0.70 0.85 V 0.5 MA ta rx a i mt e ud m D CD Cb lroecvkeinrsge v coultrargeen t TTAA==12050°C°C IR 10 5 mA Typical junction capacitance (Note 2) CJ 110 pF Typical thermal resistance (Note 3) RθJA 80.0 °C/W RθJL 30.0 Operating junction temperature range TJ -65 to +125 -65 to +150 °C Storage temperature range TSTG -65 to +150 °C NOTES: 1. Pulse test : 300µS pulse width, 1% duty cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts. 3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted 0.375” (9.5mm) lead length Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-BB059 Page 1 Comchip Technology CO., LTD.
ESD Leaded Schottky Barrier Rectifiers RATING AND CHARACTERISTIC CURVES (SB120E-G Thru. SB1100E-G) Fig.1 Forward Current Derating Curve Fig.2 Maximum Non-repetitive Peak Forward Surge Current 1.2 100 Current, (A) 10..08 Current, (A) ward 0.6 SB120E-G ~ SB145E-G Surge 10 or d e F 0.4 SB150E-G ~ SB1100E-G war Averag 0.2 single phase half wave 60Hz ak For T8.L3=m11S0 s°Cingle half sine-wave resistive or inductive load e (JEDEC Method) P 3.75”(9.5mm) lead length 0 1 0 25 50 75 100 125 150 175 1 10 100 Lead Temperature, (°C) Number of Cycles at 60Hz Fig.3 Typical Instantaneous Forward Fig.4A Typical Reverse Characteristics Characteristics 10 100 pulse width =300µS SB120E-G ~ SB145E-G A) 1% duty cycle, Tj=25°C mA) Current, ( 1.0 SB120E-G ~ SB145E-G urrent, ( 10 TJ=125°C ard se C 1.0 us Forw s Rever 0.1 TJ=75°C eo 0.1 SB150E-G ~ SB160E-G ou n e a n ant nta Inst nsta 0.01 TJ=25°C SB180E-G ~ SB1100E-G I 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 120 140 Instantaneous Forward Voltage, (V) Percent of Rated Peak Reverse Voltage, (%) Fig.5 Typical Junction Capacitance Fig. 4B Typeical Reverse Characteristic 1000 1000 SB150E-G ~ SB1100E-G A) μ acitacne, (pF) 100 erse Current, ( 1 1000 TJ=1T5J0=°1C25°C p v a e C R TJ=100°C n s 1.0 o u cti eo n n u a J nt TJ=25°C sta 0.1 f=1.0MHz In TJ=25°C 10 0.01 0.1 1.0 10 100 0 20 40 60 80 100 Reverse Voltage, (V) Percent of Rated Peak Reverse Voltage, ( %) Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-BB059 Page 2 Comchip Technology CO., LTD.
ESD Leaded Schottky Barrier Rectifiers Marking Code Part Number Marking Code Packaging SB120ET-G SB120E REEL SB140ET-G SB140E REEL SB145ET-G SB145E REEL SB150ET-G SB150E REEL SB160ET-G SB160E REEL SB180ET-G SB180E REEL SBXXXE SB1100ET-G SB1100E REEL SB120EA-G SB120E AMMO SB140EA-G SB140E AMMO SB145EA-G SB145E AMMO SB150EA-G SB150E AMMO SB160EA-G SB160E AMMO SB180EA-G SB180E AMMO XXX / XXXX = Product type marking code SB1100EA-G SB1100E AMMO SB120EB-G SB120E BULK SB140EB-G SB140E BULK SB145EB-G SB145E BULK SB150EB-G SB150E BULK SB160EB-G SB160E BULK SB180EB-G SB180E BULK SB1100EB-G SB1100E BULK Note: 1) Suffix code after part number to specify packaging item . Packaging Code REEL PACK T AMMO PACK A BULK PACK B Standard Packaging REEL PACK BULK PACK Case Type Case Type REEL Reel Size BOX ( pcs ) (inch) ( pcs ) DO-41 5,000 13 DO-41 1,000 AMMO PACK Case Type BOX ( pcs ) DO-41 5,000 Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-BB059 Page 3 Comchip Technology CO., LTD.
Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: C omchip Technology: SB140E-G