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  • 型号: SB140E-G
  • 制造商: COMCHIP TECHNOLOGY
  • 库位|库存: xxxx|xxxx
  • 要求:
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SB140E-G产品简介:

ICGOO电子元器件商城为您提供SB140E-G由COMCHIP TECHNOLOGY设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SB140E-G价格参考¥询价-¥询价。COMCHIP TECHNOLOGYSB140E-G封装/规格:二极管 - 整流器 - 单, 肖特基 通孔 二极管 40V 1A DO-41。您可以下载SB140E-G参考资料、Datasheet数据手册功能说明书,资料中有SB140E-G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE SCHOTTKY 40V 1A DO41肖特基二极管与整流器 Low VF ESD 1A 40V Schottky Rectifier

产品分类

单二极管/整流器分离式半导体

品牌

Comchip Technology

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,肖特基二极管与整流器,Comchip Technology SB140E-G-

数据手册

点击此处下载产品Datasheet

产品型号

SB140E-G

不同If时的电压-正向(Vf)

500mV @ 1A

不同 Vr、F时的电容

-

不同 Vr时的电流-反向漏电流

500µA @ 40V

二极管类型

肖特基

产品

Schottky Rectifiers

产品培训模块

http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=19180

产品目录页面

点击此处下载产品Datasheet

产品种类

肖特基二极管与整流器

供应商器件封装

DO-41

其它名称

641-1410-1

包装

剪切带 (CT)

反向恢复时间(trr)

-

商标

Comchip Technology

安装类型

通孔

安装风格

Through Hole

封装

Reel

封装/外壳

DO-204AL,DO-41,轴向

封装/箱体

DO-41

峰值反向电压

40 V

工作温度-结

-65°C ~ 125°C

工厂包装数量

5000

技术

Silicon

最大反向漏泄电流

0.5 mA

最大浪涌电流

30 A

标准包装

1

正向电压下降

0.5 V

正向连续电流

1 A

热阻

80°C/W Ja

电压-DC反向(Vr)(最大值)

40V

电流-平均整流(Io)

1A

系列

SB140E

速度

快速恢复 =< 500 ns,> 200mA(Io)

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PDF Datasheet 数据手册内容提取

ESD Leaded Schottky Barrier Rectifiers SB120E-G Thru. SB1100E-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device Features DO-41 -Low drop down voltage. -1.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free 1.0(25.4) Min. 0.106(2.7) wheeling and polarity protection. 0.079(2.0) -Silicon epitaxial planar chips. -ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) 0.205(5.2) 0.160(4.1) -Lead-free part, meet RoHS requirements. Mechanical data 1.0(25.4) Min. -Epoxy: UL94-V0 rated flame retardant 0.034(0.86) -Case: Molded plastic body DO-41 0.001(0.70) -Terminals: Solderable per MIL-STD-750 Method 2026 -Polarity: Color band denotes cathode end Dimensions in inches and (millimeter) -Mounting Position: Any -Weight: 0.34 grams Maximum Rating and Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol SB SB SB SB SB SB SB Unit 120E-G 140E-G 145E-G 150E-G 160E-G 180E-G 1100E-G Maximum recurrent peak reverse voltage VRRM 20 40 45 50 60 80 100 V Maximum RMS voltage VRMS 14 28 30 35 42 56 70 V Maximum DC blocking voltage VDC 20 40 45 50 60 80 100 V Maximum average forward rectified current I(AV) 1.0 A 0.375” (9.5mm) lead length at TA=75°C, See Figure 1 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load IFSM 30 A (JEDEC method) TL=110°C Maximum forward voltage at 1.0A (Note 1) VF 0.50 0.70 0.85 V 0.5 MA ta rx a i mt e ud m D CD Cb lroecvkeinrsge v coultrargeen t TTAA==12050°C°C IR 10 5 mA Typical junction capacitance (Note 2) CJ 110 pF Typical thermal resistance (Note 3) RθJA 80.0 °C/W RθJL 30.0 Operating junction temperature range TJ -65 to +125 -65 to +150 °C Storage temperature range TSTG -65 to +150 °C NOTES: 1. Pulse test : 300µS pulse width, 1% duty cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts. 3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted 0.375” (9.5mm) lead length Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-BB059 Page 1 Comchip Technology CO., LTD.

ESD Leaded Schottky Barrier Rectifiers RATING AND CHARACTERISTIC CURVES (SB120E-G Thru. SB1100E-G) Fig.1 Forward Current Derating Curve Fig.2 Maximum Non-repetitive Peak Forward Surge Current 1.2 100 Current, (A) 10..08 Current, (A) ward 0.6 SB120E-G ~ SB145E-G Surge 10 or d e F 0.4 SB150E-G ~ SB1100E-G war Averag 0.2 single phase half wave 60Hz ak For T8.L3=m11S0 s°Cingle half sine-wave resistive or inductive load e (JEDEC Method) P 3.75”(9.5mm) lead length 0 1 0 25 50 75 100 125 150 175 1 10 100 Lead Temperature, (°C) Number of Cycles at 60Hz Fig.3 Typical Instantaneous Forward Fig.4A Typical Reverse Characteristics Characteristics 10 100 pulse width =300µS SB120E-G ~ SB145E-G A) 1% duty cycle, Tj=25°C mA) Current, ( 1.0 SB120E-G ~ SB145E-G urrent, ( 10 TJ=125°C ard se C 1.0 us Forw s Rever 0.1 TJ=75°C eo 0.1 SB150E-G ~ SB160E-G ou n e a n ant nta Inst nsta 0.01 TJ=25°C SB180E-G ~ SB1100E-G I 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 120 140 Instantaneous Forward Voltage, (V) Percent of Rated Peak Reverse Voltage, (%) Fig.5 Typical Junction Capacitance Fig. 4B Typeical Reverse Characteristic 1000 1000 SB150E-G ~ SB1100E-G A) μ acitacne, (pF) 100 erse Current, ( 1 1000 TJ=1T5J0=°1C25°C p v a e C R TJ=100°C n s 1.0 o u cti eo n n u a J nt TJ=25°C sta 0.1 f=1.0MHz In TJ=25°C 10 0.01 0.1 1.0 10 100 0 20 40 60 80 100 Reverse Voltage, (V) Percent of Rated Peak Reverse Voltage, ( %) Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-BB059 Page 2 Comchip Technology CO., LTD.

ESD Leaded Schottky Barrier Rectifiers Marking Code Part Number Marking Code Packaging SB120ET-G SB120E REEL SB140ET-G SB140E REEL SB145ET-G SB145E REEL SB150ET-G SB150E REEL SB160ET-G SB160E REEL SB180ET-G SB180E REEL SBXXXE SB1100ET-G SB1100E REEL SB120EA-G SB120E AMMO SB140EA-G SB140E AMMO SB145EA-G SB145E AMMO SB150EA-G SB150E AMMO SB160EA-G SB160E AMMO SB180EA-G SB180E AMMO XXX / XXXX = Product type marking code SB1100EA-G SB1100E AMMO SB120EB-G SB120E BULK SB140EB-G SB140E BULK SB145EB-G SB145E BULK SB150EB-G SB150E BULK SB160EB-G SB160E BULK SB180EB-G SB180E BULK SB1100EB-G SB1100E BULK Note: 1) Suffix code after part number to specify packaging item . Packaging Code REEL PACK T AMMO PACK A BULK PACK B Standard Packaging REEL PACK BULK PACK Case Type Case Type REEL Reel Size BOX ( pcs ) (inch) ( pcs ) DO-41 5,000 13 DO-41 1,000 AMMO PACK Case Type BOX ( pcs ) DO-41 5,000 Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-BB059 Page 3 Comchip Technology CO., LTD.

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