1.5V Drive Pch MOSFET RZL035P01 (cid:122)Structure (cid:122)Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT6 (cid:122)Features Max. 1) Low on-resistance. 0.2 2) High power package. 3) Low voltage drive. (1.5V) Abbreviated symbol : YB (cid:122)Application Switching (cid:122)Packaging specifications Package Taping Type Code TR Basic ordering unit (pieces) 3000 RZL035P01 (cid:122)Absolute maximum ratings (Ta=25°C) (cid:122)Inner circuit Parameter Symbol Limits Unit (6) (5) (4) Drain-source voltage VDSS −12 V Gate-source voltage VGSS ±10 V Continuous ID ±3.5 A ∗2 Drain current Pulsed IDP ∗1 ±14 A Source current Continuous IS −0.8 A ∗1 (Body diode) Pulsed ISP ∗1 −14 A Total power dissipation PD ∗2 1.0 W (1) Drain Channel temperature Tch 150 °C (2) Drain (3) Gate Range of Storage temperature Tstg −55 to +150 °C (1) (2) (3) (4) Source ∗1 Pw≤10µs, Duty cycle≤1% ∗1 ESD PROTECTION DIODE (5) Drain ∗2 Mounted on a ceramic board ∗2 BODY DIODE (6) Drain (cid:122)Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a)∗ 125 °C / W ∗ When mounted on a ceramic board. www.rohm.com 1/4 2009.12 - Rev.A ○c 2009 ROHM Co., Ltd. All rights reserved.

RZL035P01 Data Sheet (cid:122)Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12 − − V ID= −1mA, VGS=0V Zero gate voltage drain current IDSS − − −1 µA VDS= −12V, VGS=0V Gate threshold voltage VGS (th) −0.3 − −1.0 V VDS= −6V, ID= −1mA − 26 36 mΩ ID= −3.5A, VGS= −4.5V Sretsaitsicta dnrcaein-source on-state RDS (on)∗ −− 3466 5609 mmΩΩ IIDD== −−11..77AA,, VVGGSS== −−21..58VV − 66 132 mΩ ID= −0.7A, VGS= −1.5V Forward transfer admittance Yfs ∗ 5.5 − − S VDS= −6V, ID= −3.5A Input capacitance Ciss − 1940 − pF VDS= −6V Output capacitance Coss − 260 − pF VGS=0V Reverse transfer capacitance Crss − 240 − pF f=1MHz Turn-on delay time td (on) ∗ − 10 − ns VDD −6V Rise time tr ∗ − 50 − ns ID= −1.7A Turn-off delay time td (off) ∗ − 350 − ns VRGL S = −34.5.5ΩV Fall time tf ∗ − 180 − ns RG=10Ω Total gate charge Qg ∗ − 20 − nC VDD −6V, ID= −3.5A Gate-source charge Qgs ∗ − 3.5 − nC VGS= −4.5V Gate-drain charge Qgd ∗ − 3.0 − nC RL 1.7Ω, RG=10Ω ∗Pulsed (cid:122)Body diode characteristics (Source-drain) (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD∗ − − −1.2 V IS= −3.5A, VGS=0V ∗ Pulsed www.rohm.com 2/4 2009.12 - Rev.A ○c 2009 ROHM Co., Ltd. All rights reserved.

RZL035P01 Data Sheet (cid:122)Electrical characteristics curves 10 Ta=25°C 10 VGS= -4.5V 10 VDS= -6V Pulsed VGS= -2.5V Pulsed DRAIN CURRENT : -I[A]D 2468 VVVGGVVGSS==SGG= SS--== 42-.. 155--.11VV3..V85VV DRAIN CURRENT : -I[A]D 2468 VGS=V -G1S.=8 V-1.4VVGS= -1.5V [A]DRAIN CURRENT : -ID 0.00.111 TTTTaa==aa== -1 27225555°°°°CCCC VGS= -1.2V Ta=25°C Pulsed 0 0 0.001 0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 0 0.5 1 1.5 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] GATE-SOURCE VOLTAGE : -VGS[V] Fig.1 Typical output characteristics(Ⅰ) Fig.2 Typical output characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATEΩRESISTANCE : R(ON)[m]DS1010000 TPual=s2e5d°C VVVVGGGGSSSS==== ----1124....5855VVVV TATIC DRAIN-SOURCE ON-STATEΩRESISTANCE : R(ON)[m]DS1010000 VPuGlSs=e d-4.5V TTTTaaaa====172 -25525°°5CC°°CC TATIC DRAIN-SOURCE ON-STATEΩRESISTANCE : R(ON)[m]DS 1010000 VPGulSs=e d-2.5V TTTTaaaa====172 -25525°°5CC°°CC S S 10 10 10 0.1 1 10 0.1 1 10 0.1 1 10 DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Fig.5 Static Drain-Source On-State Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Resistance vs. Drain Current(Ⅱ) Resistance vs. Drain Current(Ⅲ) ATIC DRAIN-SOURCE ON-STATEΩRESISTANCE : R(ON)[m]DS1010000 VPGulSs=e d-1.8V TTTTaaaa====172 -25525°°5CC°°CC ATIC DRAIN-SOURCE ON-STATEΩRESISTANCE : R(ON)[m]DS1010000 VPuGlSs=e d-1.5V TTTTaaaa====172 -25525°°5CC°°CC TRANSFER ADMITTANCE : |Yfs| [S] 10100 VPuDlSs=TeT dTT-aa6==aaV== 1-27225555°°°°CCCC ST ST RD A 10 10 RW 1 0.1 1 10 0.1 1 10 FO 0.1 1.0 10.0 DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Fig.8 Static Drain-Source On-State Fig.9 Forward Transfer Admittance 　　　　Resistance vs. Drain Current(Ⅳ) Resistance vs. Drain Current(Ⅳ) vs. Drain Current www.rohm.com 3/4 2009.12 - Rev.A ○c 2009 ROHM Co., Ltd. All rights reserved.

RZL035P01 Data Sheet 250 10000 10 Ta=25°C Ta=25°C VDD= -6V E DRAIN CURRENT : -Is [A] 0.11 VPGulSs=e0dV TTaa==17255°C°C C DRAIN-SOURCE ON-STATEΩESISTANCE : R(ON)[m]DS11205050000 ID=I D-=1. 7-A3.5A Pulsed SWITCHING TIME : t [ns]101001000 td(off) tf VPGulSs=e-d4.5V RG=10Ω EVERS TTaa==2-255°°CC STATIR tr td(on) R 0 1 0.01 0 2 4 6 8 10 0.01 0.1 1 10 0 0.5 1 SOURCE-DRAIN VOLTAGE : -VSD [V] GATE-SOURCE VOLTAGE : -VGS[V] DRAIN-CURRENT : -ID[A] Fig.11 Static Drain-Source On-State Fig.12 Switching Characteristics Fig.10 Reverse Drain Current 　　　　　Resistance vs. Gate Source Voltage 　　　vs. Sourse-Drain Voltage 10000 5 Ta=25°C OURCE VOLTAGE : -V [V]GS 234 Ta=25°C CAPACITANCE : C [pF] 1000 CissCoss fV=G1SM=0HVz GATE-S 1 VIRDD=GD= =-13 0.-5Ω6AV Crss Pulsed 100 00 5 10 15 20 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] TOTAL GATE CHARGE : Qg [nC] Fig.14 Typical Capacitance Fig.13 Dynamic Input Characteristics vs. Drain-Source Voltage (cid:122)Measurement circuits Pulse width ID VGS VDS VGS 1500%% 50% RL 90% D.U.T. 10% 10% RG VDD 90% 90% VDS td(on) tr td(off) tf ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS VDS Qg RL VGS IG (Const.) D.U.T. Qgs Qgd RG VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform (cid:122)Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com 4/4 2009.12 - Rev.A ○c 2009 ROHM Co., Ltd. All rights reserved.

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