RTM002P02 Transistors 2.5V Drive Pch MOS FET RTM002P02 (cid:122)Structure (cid:122)External dimensions (Unit : mm) Silicon P-channel MOS FET VMT3 1.2 (cid:122)Features 0.32 2 0. 1) Low On-resistance. (3) 82 2) Small package (VMT3). 0.1. 0.22 (1)(2) 3) 2.5V drive. 0.40.4 0.2 0.50.13 0.8 (1)Gate (2)Source (cid:122)Applications (3)Drain Abbreviated symbol : TW Switching (cid:122)Packaging specifications (cid:122)Inner circuit Package Taping (3) Type Code T2L Basic ordering unit (pieces) 8000 RTM002P02 (1) ∗2 ∗1 (2) (1) Gate ∗1 ESD PROTECTION DIODE (2) Source ∗2 BODY DIODE (3) Drain (cid:122)Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-source voltage VDSS −20 V Gate-source voltage VGSS ±12 V Continuous ID ±0.2 A Drain current Pulsed IDP ∗1 ±0.4 A Total power dissipation PD ∗2 0.15 W Channel temperature Tch 150 °C Range of storage temperature Tstg −55 to +150 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land (cid:122)Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a)∗ 833 °C/W ∗ Each terminal mounted on a recommended land 1/2

RTM002P02 Transistors (cid:122)Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS= ±12V, VDS=0V Drain-source breakdown voltage V(BR) DSS −20 − − V ID= −1mA, VGS=0V Zero gate voltage drain current IDSS − − −1 µA VDS= −20V, VGS=0V Gate threshold voltage VGS (th) −0.7 − −2.0 V VDS= −10V, ID= −1mA − 1.0 1.5 Ω ID= −0.2A, VGS= −4.5V Sretsaitsicta dnrcaein-source on-state RDS (on)∗ − 1.1 1.6 Ω ID= −0.2A, VGS= −4V − 2.0 3.0 Ω ID= −0.15A, VGS= −2.5V Forward transfer admittance Yfs ∗ 0.2 − − S VDS= −10V, ID= −0.15A Input capacitance Ciss − 50 − pF VDS= −10V Output capacitance Coss − 5 − pF VGS= 0V Reverse transfer capacitance Crss − 5 − pF f=1MHz Turn-on delay time td (on) ∗ − 9 − ns VDD −15V RTuisren -toimff edelay time td t(roff) ∗∗ −− 365 −− nnss IRVDGL==S =− 10 −0.1405.Ω5AV Fall time tf ∗ − 45 − ns RG= 10Ω ∗Pulsed (cid:122)Body diode characteristics (Source-drain) (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD − − −1.2 V IS= −0.1A, VGS=0V 2/2

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