RTF010P02 Transistors 2.5V Drive Pch MOSFET r RTF010P02 o f (cid:122)Structure (cid:122)Dimensions (Unit : mm) Silicon P-channel TUMT3 d MOSFET e Max. (cid:122)Features 0.2 d 1) Low on-resistance. (570mΩ at 2.5V) 2) High power package. s 3) High speed switching. n 4) Low voltage drive. (2.5V) (1) Gate n (2) eSource Abbreviated symbol : WQ (3) Drain g (cid:122)Applications m DC-DC converter i s m (cid:122)Packaging specifications (cid:122)Equivalent circuit e Package Taping (3) Type Code TLo D Basic ordering unit (pieces) 3000 RTF010P02 c (1) ∗2 ∗1 w e R (2) e (1) Gate ∗1 ESD PROTECTION DIODE (2) Source ∗2 BODY DIODE (3) Drain (cid:122)Absolute maximum ratings (TaN=25°C) t Parameter Symbol Limits Unit Dorain-source voltage VDSS −20 V Gate-source voltage VGSS ±12 V Continuous ID ±1 A N Drain current Pulsed IDP ∗1 ±4 A Source current Continuous IS ∗1 −0.4 A (Body diode) Pulsed ISP −4 A Total power dissipation PD ∗2 0.8 W Channel temperature Tch 150 °C Range of Storage temperature Tstg −55 to +150 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board (cid:122)Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a)∗ 156 °C / W ∗ Mounted on a ceramic board. Rev.C 1/4

RTF010P02 Transistors (cid:122)Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS=±12V, VDS=0V Drain-source breakdown voltage V(BR) DSS −20 − − V ID= −1mA, VGS=0V r Zero gate voltage drain current IDSS − − −1 µA VDS= −20V, VGS=0V o Gate threshold voltage VGS (th) −0.7 − −2.0 V VDS= −10V, ID= −1mA Static drain-source on-state ∗ − 280 390 mΩ ID= −1A, VGS= −4.5V f resistance RDS (on) − 310 430 mΩ ID= −1A, VGS= −4V − 570 800 mΩ ID= −0.5A, VGS= −2.5V Forward transfer admittance Yfs ∗ 0.7 − − S VDS= −10V, ID= −0.5A d Input capacitance Ciss − 150 − pF VDS= −10V Output capacitance Coss − 20 − pF VGS=0V e Reverse transfer capacitance Crss − 20 − pF f=1MHz Turn-on delay time td (on)∗ − 9 − ns ID= −0.5A RTFuaisrllen t -itomimfef edelay time td tt(rofff)∗∗∗ −−− 21850 −−− nnnsss RVVRGDLG=DS== 31 00 − −ΩΩ41n.55VV d s Total gate charge Qg ∗ − 2.1 − nC VDD −15V RL=15Ω Gate-source charge Qgs ∗ − 0.5 − nC eVGS= −4.5V RG=10Ω n Gate-drain charge Qgd ∗ − 0.5 − nC ID= −1A ∗Pulsed g m i (cid:122)Body diode characteristics (Source -drain) (Ta=25°C) s m Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD − − −1.2 V IS=e −0.4A, VGS=0V o D c e w R e N t o N Rev.C 2/4

RTF010P02 Transistors (cid:122)Electrical characteristic curves 10 VDS= −10V Ωm)10000 Ta=25°C Ωm)10000 VGS= −4.5V −(A)DRAIN CURRENT : I D0.00.111 TTTTaaaa==== 271−5522°°55CC°°CC Pulsed TIC DRAIN-SOURCER (STATE RESISTANCE : DS (on)1000 VVVGGGSSS=== −−−442...505VVV Pulsed TIC DRAIN-SOURCER (STATE RESISTANCE : DS (on)1000 TTTTaaaa==== 271−5522°°55CC°°CCd fPuolsed r 0.001 STAON- 100 STAON- 100 0.60.81.01.21.41.61.82.02.22.42.62.83.0 0.01 0.1 1 10 0.01 0.1 1 10 e GATE-SOURCE VOLTAGE : −VGS (V) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Fig.3 Static Drain-Source On-State d Resistance vs. Drain Current Resistance vs. Drain Current s n n e Ωm)10000 VGS= −4V Ωm)10000 VGS= −2.5V A) 10 VGS=0V AIN-SOURCER (RESISTANCE : DS (on)1000 TTTTaaaa==== 271−5522°°55CC°°CC Pulsed AIN-SOURCER (RESISTANCE : DS (on)1000 TTTTmaaaa==== 271−5522°°55CC°°CC m Pulsed si−(DRAIN CURRENT : I S 0.g11 TTTTaaaa==== 271−5522°°55CC°°CC Pulsed STATIC DRON-STATE 100 oSTATIC DRON-STATE 100 D e REVERSE 0.01 0.01 0.1 1 10 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 DRAIN CURRENT : −ID (A)c DRAIN CURRENT : −ID (A) SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.4 Static Drain-Source On-State Fig.5 Stat ic Drain-Source On-State Fig.6 Reverse Drain Current vs. Resistance vs. Drain Current wResistance vs. Drain Current Source-Drain Voltage e R e 1000 10000 8 N CITANCE : C(pF)o 100t TfV=aG1=SM=C20H5isV°zsCN HING TIME : t(ns) 1010000 td (off)tf RTVVPaDGuGD=Sl=s==21e 50−−d°Ω14C5.5VA −(V)CE VOLTAGE : V GS 34567 TVIRPDaDuG=D=l= s−=21e1 50−dA°Ω1C5V A C R CAP Crss SWIT 10 td (otnr) TE-SOU 12 10 Coss 1 GA 0 0.01 0.1 1 10 100 0.01 0.1 1 10 0 0.5 1 1.5 2 2.5 3 DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN CURRENT : −ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.7 Typical Capacitance Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics vs. Drain-Source Voltage Rev.C 3/4

RTF010P02 Transistors (cid:122)Measurement circuits r Pulse Width VGS ID VDS VGS 1500%% 90% 50% o RL f D.U.T. 10% 10% RG VDD 90% 90% VDS d td(on) tr td(off) tf tone toff Fig.10 Switching Time Measurement Circuit Fig.11 Switching Waveforms d s n n e VG VGS ID VDS m g Qg IG(Const.) RL iVGS D.U.T. RG m s Qgs Qgd VDD e Charge o D Fig.12 Gate Charge Measurement Circuit Fig.13 Gate Charge Waveforms c w e R e N t o N Rev.C 4/4

Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representativeand verify the latest specifica- r tions : o 3) Although ROHM is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take fsafety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the ratindg specified by ROHM. 4) Examples of application circuits, circuit constants and any other informatione contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. d 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or othern rights held by ROHM or asny other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. n e 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. m g 7) The Products specified in this document are not designed to be radiation tolerant. i 8) For use of our Products in applications requiring a high desgree of reliability (as exemplified below), please contact and consult m with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and poweer transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace o equipment, nuclear power control systems, and suDbmarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with c the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care tow ensur the accuracy of the information contained in this e document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. R e 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting N non-compliance with any applicable laws or regulations. t 13) When providing our Products and technologies contained in this document to other countries, o you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. N 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com R1102A © 2013 ROHM Co., Ltd. All rights reserved.

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