Data Sheet 4V Drive Pch MOSFET RSD140P06 Structure Dimensions (Unit : mm) r Silicon P-channel MOSFET CPT3 o (SC-63) 6.5 <SOT-428> 5.1 2.3 0.5 f Features 1.5 12)) LFoawst osnw-irtechsiisntga nscpee.ed. d 0.9 5.5 1.59.5 3) Drive circuits can be simple. 0.75 2.5 e 4) Parallel use is easy. 0.9(1)2.3(2) (3)0.26.53 0.8Min.0.5 1.0 d Application Switching s n n e Packaging specifications Inner circuit g Package Taping m ∗1 Type Code TL i Basic ordering unit (pieces) 2500 s ∗2 RSD140P06 ○ m e (1) (2) (3) o (1) Gate D (2) Drain 1 ESD PROTECTION DIODE (3) Source 2 BODY DIODE c Absolute maximum ratings (T = 25°C) a w Parameter e Symbol Limits Unit Drain-source voltage V 60 V DSS R Gate-source voltage VGeSS 20 V Continuous I 14 A Drain current D Pulsed N IDP *1 28 A Source currentt Continuous I 14 A S (Body Diodoe) Pulsed I *1 28 A SP Power dissipation P *2 20 W D ChanNnel temperature T 150 C ch Range of storage temperature T 55 to 150 C stg *1 Pw≤10s, Duty cycle≤1% *2 Tc=25C Thermal resistance Parameter Symbol Limits Unit Channel to Case R * 6.25 C / W th (ch-c) * Tc=25C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A

RSD140P06 　 Data Sheet Electrical characteristics (T = 25°C) a Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I - - 10 A V =20V, V =0V GSS GS DS Drain-source breakdown voltage V 60 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I - - 1 A V =60V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 3.0 V V =10V, I =1mA GS (th) DS D - 60 84 ID=14A, VGS=10V r Static drain-source on-state * resistance RDS (on) - 73 103 m ID=14A, VGS=4.5V o - 77 108 I =-14A, V =-4.0V D GS Forward transfer admittance l Y l* 10 - - S I =14A, V =10V f fs D DS Input capacitance C - 1900 - pF V =10V iss DS Output capacitance C - 200 - pF V =0V d oss GS Reverse transfer capacitance C - 100 - pF f=1MHz rss e Turn-on delay time t * - 20 - ns I =7.0A, V 30V d(on) D DD Rise time t * - 45 - ns V =10V r dGS Turn-off delay time t * - 240 - ns R =4.3 d(off) L Fall time t * - 110 - ns R =10 s f n G Total gate charge Q * - 27 - nC V 30V g DD n Gate-source charge Q * - 4.5 -e nC I =14A, gs D Gate-drain charge Q * - 5.0 - nC V =10V gd GS g m *Pulsed i s m Body diode characteristics (Source-Drain) (T = 25C) a e Parameter Symbol Min. Typ. Max. Unit Conditions Forward Voltage VSD* o- - D1.2 V Is=14A, VGS=0V *Pulsed c w e R e N t o N www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A

RSD140P06 　 Data Sheet Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 10 14 VGS=-10.0V VGS=-10.0V Tpua=ls2e5d° C VGS=-4.5V 12 VGS=-4.0V 8 VGS=-4.0V VGS=-3.6V -Drain Current : I [A] D 46 VVVGGGSSS===---333...462VVV VTpGua=Sls=2e-5d2° C.8 V -Drain Current : I [A] D 1680 foVGS=-r2.8V 4 d VGS=-2.6V 2 VGS=-2.5V 2 VGS=-2.5V e 0 0 0 0.2 0.4 0.6 0.8 1 0 d2 4 6 8 10 Drain-Source Voltage : -VDS [V] Drain-Source Voltage : -VDS [V] s n Fig.3 Static Drain-Source On-State Resistance vs. Drain Current Fig.4 Static Drain-Source On-State Resistance vs. Drain Current n 1000 e1000 Ta=25°C VpuGlSs=e-d1 0V pulsed g Source On-State Resistance R(on) [mΩ] DS 100 VVVGGGSSS===---441..005VVV m m Source On-State Resistance R(on) [mΩ] DSe100 si TTTTaaaa====172-225555°°CC°°CC n- o n- Drai D Drai Static c Static w e 10 10 0.01 0.1 1 10 100 0.01 0.1 1 10 100 RDrain Current : -ID [A] Drain Current : -ID [A] e Fig.5 S tatic Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Drain Current N 1000t 1000 N Resistance o VpuGlSs=e-d4 .5V TTTTaaaa====172-225555°°CC°°CC Resistance VpuGlSs=e-d4 V TTTTaaaa====172-225555°°CC°°CC Drain-Source On-State R(on) [mΩ] DS 100 Drain-Source On-State R(on) [mΩ] DS 100 Static Static 10 10 0.01 0.1 1 10 100 0.01 0.1 1 10 100 Drain Current : -ID [A] Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.08 - Rev.A

RSD140P06 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics 100 100 VDS=-10V VDS=-10V pulsed pulsed orward Transfer Admittance |Yfs| [S] 110 TTTTaaaa====172-225555°°CC°°CC -Drain Currnt : I [A] D 01.101 TTTTaa==aa==1-27225555°°°°CCCC fo r F 0.1 d 0.01 e 0.01 0.001 0.001 0.01 0.1 1 10 100 1.0 d1.5 2.0 2.5 3.0 3.5 Drain Current : -ID [A] Gate-Source Voltage : -VGS [V] s n Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.9 Source Current vs. Source-Drain Voltage n 100 e 300 VpuGlSs=e0dV Ta=25°C m nce 250 g pulsed a -e Current : Is [A] 110 TTTTaaaa====172-225555°°CC°°CC m ource On-State ResistR(on) [mΩ] DSe125000 siIDID==--174AA c S Sour o D Drain- 100 0.1 atic c St 50 w e 0.01 0 0.0 0.5 1.0 1.5 0 2 4 6 8 10 12 14 16 18 20 RSource-Drain Voltage : -VSD [V] Gate-Source Voltage : -VGS [V] e Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics N 10000t 10 VDD≒-30V Ta=25°C o VGS=-10V VDD=-30V N me : t [ns] 1000 tf td(off) RTPauG=l=s21e50d°ΩC -ge : V [V] GS 68 IPDu=l-s1e4dA ng Ti 100 Volta hi e Switc Sourc 4 e- at 10 td(on) tr G 2 1 0 0.01 0.1 1 10 100 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 Drain Current : -ID [A] Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.08 - Rev.A

RSD140P06 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 100000 100 Tf=a1=M25H°zC Operation in th(VisG aSr =e a- 1is0 lVim) ited by RDS(on) Tc=25°C VGS=0V 10000 10 rPW = 100μs ance : C [pF] 1000 Ciss -nt : I[ A ] D 1 o PW = 1ms Capacit Coss nCurre f PW = 10ms ai 100 Dr 0.1 d DC Operation Crss e 10 0.01 0.01 0.1 1 10 100 0.1 d 1 10 100 Drain-Source Voltage : -VDS [V] Drain-Source Voltage : -VDS [ V ] s n Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width n 10 e （）rt TSCin=g2l5e° PCu lse g e : m c an 1 st i si e R s al m m Ther 0.1 e nt e nsi o Tra D d 0.01 e aliz c Norm e RRtthh((cchh--cc))=(t6)=.2r(5t)°×C/RWth (ch-c) w 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 R Pulse width : Pw (s) e N t o N www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.08 - Rev.A

RSD140P06 　 Data Sheet Measurement circuits Pulse width VGS ID VDS VGS 1500%% 90% 50% RL D.U.T. 10% 10% RG VDD VDS 90% 90% r td(on) tr td(off) tf o ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms f d VG VGS ID VDS Qg e RL VGS IG(Const.) D.U.T. Qgs Qgd d VDD s n Charge n e Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform g m i s m e o D c w e R e N t o N www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.08 - Rev.A

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