RPM-075PT Sensors Phototransistor, surface mount type RPM-075PT Quite new phototransistor which peak sensitivity is designed as same level as human eye. Best sensor to detect illuminance. (Peak sensitivity is 600nm.) Small and light weight package which can be used for reflow soldering and Pd free soldering. !!!!Application !!!!External dimensions (Units : mm) Control of lighting cellular phones, LCD displays, etc. Unspecified tolerance Control of strobe. (DSC, camcorder, etc.) shall be ±0.1 (0.15) Emitter mark !!!!Features 1.25 1) Best sensor to detect illuminance. (Peak sensitivity is 600nm.) 1.4 2) Small (2125) and light weight package (3mg) which 2.0+−00.2 can be used for reflow soldering and Pd free soldering. 0.8 3) Linear against wide range of illuminance from a few 0.25 Lx to 10000Lx over. 1.2 4) Use Si good for an environ ment. (not CdS) 2 1 1 2 Emitter Collector !!!!Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-emitter voltage VCEO 20 V Emitter-collector voltage VECO 5 V Collector current IC 10 mA Collector power dissipation PC 50 mW Operating temperature Topr −30∼+85 ˚C Storage temperature Tstg −40∼+100 ˚C !!!!Electrical and optical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Light current IC 0.25 0.4 0.6 mA VCE=5V, E=500Lx Dark current ICEO − − 0.5 µA VCE=10V (Black box) Peak sensitivity wavelength λP − 600 − nm − Collector-emitter saturation voltage VCE(sat) − − 0.4 V IC=0.1mA, E=500Lx Half-angle θ1/2 − ±60 − deg − Response time tr·tf − 10 − µs VCC=5V, IC=1mA, RL=100Ω 1/2

RPM-075PT Sensors !!!!Electrical and optical characteristic curves 1.6 1 1000 VCE=5V %) (mA)URRENT : IC 011...8124 (mA)URRENT : IC 0.5 EE==1070500LLxx (OR CURRENT : IC100 CTOR C 0.6 CTOR C E=500Lx OLLECT 10 LLE 0.4 LLE E=250Lx E C O O V C 0.2 C TI A L 00 250 500 750 1000 1250 00 1 2 3 4 5 RE −150 −25 0 25 50 75 100 ILLUMINANCE : E (Lx) COLLECTOR-EMITTER VOLTAGE : VCE (V) AMBIENT TEMPERATURE : Ta (°C) Fig.1 Collector current-Illuminance Fig.2 Output characteristics Fig.3 Relative output-Ambient temperature 10000 120 120 W) 1000 %)100 m100 (nA)DARK CURRENT : ICEO 1010.1100 VVVCCCEEE===123000VVV (RELATIVE SENSITIVITYT : IC 24680000 (OLLECTOR DISSIPATION : PC 24680000 C 0.0−150 −25 0 25 50 75 100 4000 500 600 700 800 900 1000 1100 −025 0 25 50 75 100 AMBIENT TEMPERATURE : Ta (°C) OPTICAL WAVELENGTH : λ (nm) AMBIENT TEMPERATURE : Ta (°C) Fig.4 Dark current-Ambient temperature Fig.7 Spectral sensitivity characteristics Fig.6 Collector dissipation -Ambient temperature 1000 100 100 Ta=25C VCC=5V %) 90 %) 90 s) (GTH 80 (GTH 80 µ (E TIME : tr1000 RL=100RkΩL=50kΩ TING STREN 567000 TING STREN 567000 RESPONS RL=20kΩ RL=1kΩ TIVE EMIT 234000 TIVE EMIT 234000 A A L L E 10 E 10 R R 100 0 0 0.001 0.01 0.1 1 10 100 −90 −60 −30 0 30 60 90 −90 −60 −30 0 30 60 90 COLLECTOR CURRENT : IC (mA) ANGULAR DISPLACEMENT : θ (deg) ANGULAR DISPLACEMENT : θ (deg) Fig.7 Response time-Collector current Fig.8 Directional pattern Fig.9 Directional pattern 2/2