RPM-012PB Sensors High Sensitivity Chip Sensor, Side veiw type RPM-012PB The RPM-012PB is ultra small size and high sensitivity chip sensor. Original technology, original structure and original optical design enable to use Automatic mounting machine, Reflow, ultra small size, high sensitivity. (cid:122)(cid:122)(cid:122)(cid:122)Application (cid:122)(cid:122)(cid:122)(cid:122)External dimensions (Units : mm) Optical control equipment Note) 1.Unspecified tolerance shall be +− 0.2. Receiver for sensors 2.Dimension in parenthesis arere sfehroewn cfoer. 0.25 2-0.4 (cid:122)(cid:122)(cid:122)(cid:122)Features 1) High sensitivity by φ2 lenze. 1 2 2 2) Ultra-compact surface mount package. 3 (3mm x 3mm x 2mm) 0.8 R1 3) It is possible to do Reflow. 3 2 Internal connection diagram 1 2 (cid:122)(cid:122)(cid:122)(cid:122)Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-emitter voltage VCEO 32 V Emitter-collector voltage VECO 5 V Collector current IC 20 mA Collector power dissipation PC 75 mW Operating temperature Topr −30∼+85 ˚C Storage temperature Tstg −40∼+100 ˚C (cid:122)(cid:122)(cid:122)(cid:122)Electrical and optical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Light current IC 0.56 1.6 2.8 mA VCE=5V, E=500Lx Dark current ICEO − − 0.5 µA VCE=10V (Black box) Peak sensitivity wavelength λP − 800 − nm − Collector-emitter saturation voltage VCE(sat) − − 0.4 V IC=0.1mA, E=500Lx Half-angle θ1/2 − ±12 − deg − Response time tr·tf − 10 − µs VCC=5V, IC=1mA, RL=100Ω 1/2

RPM-012PB Sensors (cid:122)(cid:122)(cid:122)(cid:122)Electrical and optical characteristic curves 4 1000 () mACOLLECTOR CURRENT : IC 123 VCE=5V ()mACOLLECTOR CURRENT : IC 1234 EEEE===1=520750050000LLLLxxxx () %TIVE COLLECTOR CURRENT : IC11000 A 00 250 500 750 1000 1250 00 10 20 30 REL −150 −25 0 25 50 75 100 ILLUMINANCE : E (Lx) COLLECTOR-EMITTER VOLTAGE : VCE (V) AMBIENT TEMPERATURE : Ta (°C) Fig.1 Collector current−llluminance Fig.2 Output characteristics Fig.3 Relative output−Ambient temperature 10000 100 1000 Ta=25 C 1000 )% VCC=10V () nADARK CURRENT : ICEO 1010.1100 VVVCCCEEE===123000VVV ( ELATIVE SENSITIVITYT : IC 24680000 (µ) sRESPONSE TIME : tr 10100 RRRL=LL=1=50100k0ΩΩΩ R 0.0−150 −25 0 25 50 75 100 4000 500 600 700 800 900100011001200 10.1 1 10 100 AMBIENT TEMPERATURE : Ta (°C) OPTICAL WAVELENGTH : λ (nm) COLLECTOR CURRENT : IC (mA) Fig.4 Dark current−Ambient temperature Fig.5 Spectral sensitivity characteristics Fig.6 Response time-Collector current 100 100 )% 90 − 0 + )% 90 − 0 + (TH 80 (TH 80 G G EN 70 EN 70 R R ST 60 ST 60 NG 50 NG 50 TI TI MIT 40 MIT 40 E E 30 E E 30 V V ATI 20 ATI 20 EL 10 EL 10 R R 0−90 −60 −30 0 30 60 90 0−90 −60 −30 0 30 60 90 ANGULAR DISPLACEMENT : θ (deg) ANGULAR DISPLACEMENT : θ (deg) Fig.7 Directional pattern(1) Fig.8 Directional pattern(2) 2/2