Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT R07DS0088EJ0200 Rev.2.00 High Speed Power Switching Nov 16, 2010 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage V = 1.6 V typ. (I = 22 A, V = 15V, Ta = 25°C) CE(sat) C GE  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate G 2. Collector 3. Emitter E 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage V 600 V CES Gate to emitter voltage V ±30 V GES Collector current Tc = 25°C I 45 A C Tc = 100°C I 22 A C Collector peak current ic(peak) Note1 90 A Collector dissipation P Note2 40 W C Junction to case thermal impedance j-c Note2 3.125 °C/ W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C R07DS0088EJ0200 Rev.2.00 Page 1 of 6 Nov 16, 2010

RJP60D0DPM Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current I — — 5 A V = 600 V, V = 0 CES CE GE Gate to emitter leak current I — — ±1 A V = ±30 V, V = 0 GES GE CE Gate to emitter cutoff voltage V 4.0 — 6.0 V V = 10 V, I = 1 mA GE(off) CE C Collector to emitter saturation voltage V — 1.6 2.2 V I = 22 A, V = 15 V Note3 CE(sat) C GE V — 2.0 — V I = 45 A, V = 15 V Note3 CE(sat) C GE Input capacitance Cies — 1050 — pF V = 25 V CE Output capacitance Coes — 70 — pF VGE = 0 Reveres transfer capacitance Cres — 32 — pF f = 1 MHz Total gate charge Qg — 45 — nC V = 15 V GE Gate to emitter charge Qge — 6 — nC VCE = 300 V Gate to collector charge Qgc — 20 — nC IC = 22 A Switching time t — 35 — ns V = 300 V, V = 15 V d(on) CC GE tr — 20 — ns IC = 22 A t — 90 — ns Rg = 5  d(off) Inductive load) t — 70 — ns f Short circuit withstand time t 3.0 5.0 — s V  360 V, V = 15 V sc CC GE Notes: 3. Pulse test R07DS0088EJ0200 Rev.2.00 Page 2 of 6 Nov 16, 2010

RJP60D0DPM Preliminary Main Characteristics Collector Dissipation vs. Maximum DC Collector Current vs. Case Temperature Case Temperature 50 50 W) Pc ( 40 (A)C 40 on 30 nt I 30 sipati Curre Dis 20 or 20 ector 10 ollect 10 oll C C 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 1000 100 A) A) 80 urrent I (C 11000 100 μsPW = 10 μs urrent I (C 60 C C or or 40 ct ct olle 1 olle 20 C C Ta = 25°C Single pulse 0.1 0 1 10 100 1000 0 200 400 600 800 Collector to Emitter Voltage V (V) Collector to Emitter Voltage V (V) CE CE Typical Output Characteristics Typical Output Characteristics Pulse Test 12 V Pulse Test 80 Ta = 25°C 80 Ta = 150°C 12 V A) A) (C 15 V 10 V (C 15 V nt I 60 18 V nt I 60 18 V 10 V e e urr urr C 40 C 40 or or ect VGE = 8 V ect VGE = 8 V oll 20 oll 20 C C 0 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector to Emitter Voltage V (V) Collector to Emitter Voltage V (V) CE CE R07DS0088EJ0200 Rev.2.00 Page 3 of 6 Nov 16, 2010

RJP60D0DPM Preliminary Collector to Emitter Satularion Voltagevs. Collector to Emitter Satularion Voltagevs. Gate to Emitter Voltage (Typical) Gate to Emitter Voltage (Typical) V) V) Collector to Emitter Satularion Voltage V (CE(sat) 042680 IC =4 4252 AA 8 12 TPau l=s1 e62 5Te°Cst 20 Collector to Emitter Satularion Voltage V (CE(sat) 042680 IC =4 2425 AA 8 12 TPau l=s1 e61 5Te0s°Ct 20 Gate to Emitter Voltage V (V) Gate to Emitter Voltage V (V) GE GE Switching Caracteristics (Typical) (1) Switching Caracteristics (Typical) (2) 1000 10000 J) VCC = 300 V, VGE = 15 V s) µE ( Rg = 5 Ω, Ta = 25°C s t (n 100 td(off) sses 1000 e o ng Tim td(otnf) ergy L Eoff witchi 10 tr ng En 100 Eon S hi VCC = 300 V, VGE = 15 V wit Rg = 5 Ω, Ta = 25°C S 1 10 1 10 100 1 10 100 Collector Current I (A) Collector Current I (A) C C (Inductive load) (Inductive load) Switching Caracteristics (Typical) (3) Switching Caracteristics (Typical) (4) 1000 1000 VCC = 300 V, VGE = 15 V J) s) IC = 22 A, Ta = 25°C µE ( s t (n sses EEoofnf e o m L Ti 100 td(off) y 100 ng erg hi En witc td(on) ng S tf hi tr wit VCC = 300 V, VGE = 15 V S IC = 22 A, Ta = 25°C 10 10 2 5 10 20 50 2 5 10 20 50 Gate Registance Rg (Ω) Gate Registance Rg (Ω) (Inductive load) (Inductive load) R07DS0088EJ0200 Rev.2.00 Page 4 of 6 Nov 16, 2010

RJP60D0DPM Preliminary Transfer Characteristics (Typical) 80 A) (C Ta = 25°C nt I 60 150°C e urr C 40 or ct e oll 20 C V = 10 V CE Pulse Test 0 0 4 8 12 16 Gate to Emitter Voltage V (V) GE Thermal Impedance vs. Pulse Width W) 10 C/ TC = 25°C ° c ( – h 1 c θ nce Single pulse a d e 0.1 p m al I m er h T 0.01 100 µ 1m 10 m 100 m 1 10 100 Pulse Width PW (s) Switching Time Test Circuit Waveform 90% Diode clamp/ D.U.T L Vin 10% 90% 90% D.U.T/ V Ic 10% CC 10% Rg Driver td(on) tr td(off) tf ton toff R07DS0088EJ0200 Rev.2.00 Page 5 of 6 Nov 16, 2010

RJP60D0DPM Preliminary Package Dimension Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.] TO-3PFM SC-93 PRSS0003ZA-A TO-3PFM / TO-3PFMV 5.2g Unit: mm 3 15.6 ± 0.3 0. 5.5 ± 0.3 ± φ3.2+– 00..24 5.0 3 0. ± 3 3 3 9 0. 0. 0. 9. ± ± ± 1 0 7 0 2. 2. 5. 3.2 ± 0.3 4.0 ± 0.3 2.6 1.6 5 0.86 0.86 ± 0. 0 1. 2 0.66+– 00..12 0.9+– 00..12 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Orderable Part Number Quantity Shipping Container RJP60D0DPM-00-T1 360 pcs Box (Tube) R07DS0088EJ0200 Rev.2.00 Page 6 of 6 Nov 16, 2010

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