RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 (cid:122)Structure (cid:122)External dimensions (Unit : mm) Silicon N-channel MOS FET MPT3 SOT-89 14..65 0.5 1.5 (cid:122)Features 1) Low On-resistance. 2.54.0 2) Low voltage drive (2.5V drive). (1) (2) (3) 0.4 0.5 0.41.0 0.4 1.5 1.5 (cid:122)Applications (1)Gate 3.0 (2)Drain Switching (3)Source Abbreviated symbol : LS (cid:122)Packaging specifications (cid:122)Inner circuit DRAIN Package Taping Type Code T100 Basic ordering unit (pieces) 1000 RJP020N06 GATE ∗2 ∗1 SOURCE ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (cid:122)Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±12 V Continuous ID ±2.0 A Drain current Pulsed IDP ∗1 ±8.0 A Source current Continuous IS 2.0 A (Body diode) Pulsed ISP ∗1 8.0 A 500 mW Total power dissipation PD 2 ∗2 W Channel temperature Tch 150 °C Range of storage temperature Tstg −55 to +150 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a 40+ 40+ 0.7mm ceramic board (cid:122)Thermal resistance Parameter Symbol Limits Unit 250 °C/W Channel to ambient Rth(ch-a) 62.5 ∗ °C/W ∗ When mounted on a 40+ 40+ 0.7mm ceramic board 1/2

RJP020N06 Transistors (cid:122)Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS= ±12V, VDS=0V Drain-source breakdown voltage V(BR) DSS 60 − − V ID= 1mA, VGS=0V Zero gate voltage drain current IDSS − − 1 µA VDS= 60V, VGS=0V Gate threshold voltage VGS (th) 0.8 − 1.5 V VDS= 10V, ID= 1mA − 165 240 mΩ ID= 2A, VGS= 4.5V Sretsaitsicta dnrcaein-source on-state RDS (on)∗ − 170 250 mΩ ID= 2A, VGS= 4V − 210 300 mΩ ID= 2A, VGS= 2.5V Forward transfer admittance Yfs ∗ 1.5 − − S VDS= 10V, ID= 2A Input capacitance Ciss − 160 − pF VDS= 10V Output capacitance Coss − 50 − pF VGS=0V Reverse transfer capacitance Crss − 45 − pF f=1MHz Turn-on delay time td (on) ∗ − 8 − ns VDD 30V Rise time tr ∗ − 18 − ns ID= 1A Turn-off delay time td (off) ∗ − 40 − ns RVGL=S=3 04ΩV Fall time tf ∗ − 20 − ns RG=10Ω Total gate charge Qg ∗ − 5 10 nC VDD 30V Gate-source charge Qgs ∗ − 1 − nC VGS= 4V Gate-drain charge Qgd ∗ − 2.5 − nC ID= 2A ∗Pulsed (cid:122)Body diode characteristics (Source-drain) (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD − − 1.2 V IS= 2A, VGS=0V 2/2

Notice Precaution on using ROHM Products 1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice-PGA-E Rev.003 © 2015 ROHM Co., Ltd. All rights reserved.

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