RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 (cid:122)Structure (cid:122)External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 (cid:122)Features 0.4 0.8 1) Low On-resistance. (3) 2) Low voltage drive (2.5V drive). 1.62.8 (2) (1) 0.951.90.95 0.15 0.3Min. (cid:122)Applications (1)Source Switching (2)Gate Each lead has same dimensions (3)Drain Abbreviated symbol : KV (cid:122)Packaging specifications and hFE (cid:122)Inner circuit Package Taping (3) Type Code T146 Basic ordering unit (pieces) 3000 RJK005N03 (2) ∗2 (1) Source ∗1 (2) Gate ∗1 ESD PROTECTION DIODE(1) (3) Drain ∗2 BODY DIODE (cid:122)Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±12 V Continuous ID ±500 mA Drain current Pulsed IDP ∗1 ±2.0 A Source current Continuous IS 200 mA (Body Diode) Pulsed ISP ∗1 800 mA Total power dissipation PD ∗2 200 mW Channel temperature Tch 150 °C Range of storage temperature Tstg −55 to +150 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land (cid:122)Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a)∗ 625 °C/W ∗ Each terminal mounted on a recommended land 1/2

RJK005N03 Transistors (cid:122)Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS=±12V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 − − V ID= 1mA, VGS=0V Zero gate voltage drain current IDSS − − 1 µA VDS= 30V, VGS=0V Gate threshold voltage VGS (th) 0.8 − 1.5 V VDS= 10V, ID= 1mA − 400 580 mΩ ID= 500mA, VGS= 4.5V Sretsaitsicta dnrcaein-source on-state RDS (on)∗ − 420 600 mΩ ID= 500mA, VGS= 4V − 650 940 mΩ ID= 500mA, VGS= 2.5V Forward transfer admittance Yfs ∗ 0.5 − − S VDS= 10V, ID= 500mA Input capacitance Ciss − 60 − pF VDS= 10V Output capacitance Coss − 24 − pF VGS=0V Reverse transfer capacitance Crss − 12 − pF f=1MHz Turn-on delay time td (on) ∗ − 9 − ns VDD 15V Rise time tr ∗ − 11 − ns ID= 250mA Turn-off delay time td (off) ∗ − 16 − ns RVGL=S=6 04ΩV Fall time tf ∗ − 31 − ns RG=10Ω Total gate charge Qg ∗ − 2.0 4.0 nC VDD 24V Gate-source charge Qgs ∗ − 0.6 − nC VGS= 4V Gate-drain charge Qgd ∗ − 0.7 − nC ID= 500mA ∗Pulsed (cid:122)Body diode characteristics (Source-drain) (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD∗ − − 1.2 V IS= 500mA, VGS=0V ∗Pulsed 2/2

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1

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