Preliminary Datasheet RJH60D1DPP-M0 600V - 10A - IGBT R07DS0158EJ0400 Rev.4.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage V = 1.9 V typ. (at I = 10 A, V = 15 V, Ta = 25°C) CE(sat) C GE  Built in fast recovery diode (70 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching t = 75 ns typ. (at V = 300 V, V = 15 V, I = 10 A, Rg = 5 , inductive load) f CC GE C Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C 1. Gate 2. Collector G 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage V / V 600 V CES R Gate to emitter voltage V ±30 V GES Collector current Tc = 25°C I 20 A C Tc = 100°C I 10 A C Collector peak current ic(peak) Note1 40 A Collector to emitter diode forward current i 10 A DF Collector to emitter diode forward peak current i (peak) Note1 40 A D Collector dissipation P Note2 30 W C Junction to case thermal resistance (IGBT) j-c Note2 4.1 °C/ W Junction to case thermal resistance (Diode) j-cd Note2 7.2 °C/ W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C R07DS0158EJ0400 Rev.4.00 Page 1 of 9 Apr 19, 2012

RJH60D1DPP-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to emitter breakdown V 600 — — V I =10 A, V = 0 BR(CES) C GE voltage Zero gate voltage collector current I / I — — 5 A V = 600 V, V = 0 CES R CE GE / Diode reverse current Gate to emitter leak current I — — ±1 A V = ±30 V, V = 0 GES GE CE Gate to emitter cutoff voltage V 4.0 — 6.0 V V = 10 V, I = 1 mA GE(off) CE C Collector to emitter saturation voltage V — 1.9 2.5 V I = 10 A, V = 15 V Note3 CE(sat) C GE V — 2.6 — V I = 20 A, V = 15 V Note3 CE(sat) C GE Input capacitance Cies — 275 — pF V = 25 V CE Output capacitance Coes — 25 — pF VGE = 0 Reveres transfer capacitance Cres — 8 — pF f = 1 MHz Total gate charge Qg — 13 — nC V = 15 V GE Gate to emitter charge Qge — 3 — nC VCE = 300 V Gate to collector charge Qgc — 5 — nC IC = 10 A Turn-on delay time t — 30 — ns V = 300 V d(on) CC Rise time tr — 13 — ns VGE = 15 V Turn-off delay time td(off) — 42 — ns IC = 10 A Rg = 5  Fall time t — 75 — ns f (Inductive load) Turn-on energy E — 0.10 — mJ on Turn-off energy E — 0.13 — mJ off Total switching energy E — 0.23 — mJ total Short circuit withstand time t 3.0 5.0 — s V  360 V, V = 15 V sc GE GE FRD forward voltage V — 1.4 1.9 V I = 10 A Note3 F F FRD reverse recovery time t — 70 — ns I = 10 A rr F FRD reverse recovery charge Qrr — 0.11 — C diF/dt = 100 A/s FRD peak reverse recovery current I — 3.5 — A rr Notes: 3. Pulse test. R07DS0158EJ0400 Rev.4.00 Page 2 of 9 Apr 19, 2012

RJH60D1DPP-M0 Preliminary Main Characteristics Collector Dissipation vs. Maximum DC Collector Current vs. Case Temperature Case Temperature 40 30 W) Pc ( 30 (A)C 25 on nt I 20 sipati 20 Curre 15 s ector Di 10 ollector 10 oll C 5 C 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 100 60 A) PW A) 50 ent I (C 10 100 μ = 10 μs ent I (C 40 urr 1 s urr 30 C C ctor ctor 20 olle 0.1 olle C C 10 Tc = 25°C Single pulse 0.01 0 1 10 100 1000 0 200 400 600 800 Collector to Emitter Voltage V (V) Collector to Emitter Voltage V (V) CE CE IGBT Outp ut Characteristics (Typical) IGBT Outp ut Characteristics (Typical) 40 40 Tc = 25°C 18 V Tc = 150°C 18 V 15 V Pulse Test Pulse Test A) A) 15 V (C 30 12 V (C 30 nt I nt I 12 V e e urr 20 10 V urr 20 C C 10 V or or ct ct olle 10 VGE = 8 V olle 10 VGE = 8 V C C 0 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector to Emitter Voltage V (V) Collector to Emitter Voltage V (V) CE CE R07DS0158EJ0400 Rev.4.00 Page 3 of 9 Apr 19, 2012

RJH60D1DPP-M0 Preliminary Collector to Emitter Saturation Voltage Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) vs. Gate to Emitter Voltage (Typical) eV) 5 eV) 5 oltag (at) PTcu l=s e2 5T°eCst oltag (at) on VVCE(s 4 on VVCE(s 4 Collector to Emitter Saturati 1324 8 12 1I6C = 21050 AAA20 Collector to Emitter Saturati 1324 PTcu l=s e1 5T80e°sCt 12 1I6C = 21050 AAA20 Gate to Emitter Voltage V (V) Gate to Emitter Voltage V (V) GE GE Collector to Emitter Saturation Voltage Typical Transfer Characteristics vs. Cas e Temparature (Typical) Collector Current I (A)C 4321000000 VPCuEls e=4 T10e sVtTc8 = 25°C12 11560°C 20 Collector to Emitter Saturation Voltage V (V)CE(sat) 4323211.......0555000−25VPGu0Els e= T1e52s 5Vt 50 75IC 1=0 120500 AAA125 150 Gate to Emitter Voltage VGE (V) Case Temparature Tc (°C) Gate to Emitter Cutoff Voltage vs. Cas e Temparature (Typical) Frequenc y Characteristics (Typical) V) (E(off) 10 A) 5 age VG 8 IC = 10 mA (C(RSM) 4 0 Colle(Scqtoura cruer wreanvt ew)ave utoff Volt 64 urrent I 32 C 1 mA C er or e to Emitt 20 VPCuEls e= T10e sVt Collect 10 TVRjCg =E = =1 5 24 50Ω°0,C Vd, u,T tVcyG ==E 95=00 1°%5C V Gat −25 0 25 50 75 100 125 150 1 10 100 1000 Case Temparature Tc (°C) Frequency f (kHz) R07DS0158EJ0400 Rev.4.00 Page 4 of 9 Apr 19, 2012

RJH60D1DPP-M0 Preliminary Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2) 1000 10 J) m s) E ( es t (n 100 td(oftff) osses 1 EonEoff m L Ti td(on) y ng erg chi 10 tr En 0.1 wit ng S hi VCC = 300 V, VGE = 15 V wit VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C S Rg = 5 Ω, Tc = 150°C 1 0.01 1 10 100 1 10 100 Collector Current I (A) Collector Current I (A) C C (Inductive load) (Inductive load) Switching Characteristics (Typical) (3) Switching Characteristics (Typical) (4) 1000 1 VCC = 300 V, VGE = 15 V J) s) IC = 10 A, Tc = 150°C E (m e t (n tf sses EEoofnf m o g Ti 100 gy L 0.1 hin td(off) ner witc g E S td(on) hin tr wit VCC = 300 V, VGE = 15 V S IC = 10 A, Tc = 150 °C 10 0.01 1 10 100 1 10 100 Gate Resistance Rg (Ω) Gate Registance Rg (Ω) (Inductive load) (Inductive load) Switching Characteristics (Typical) (5) Switching Characteristics (Typical) (6) 1000 1 VCC = 300 V, VGE = 15 V J) I = 10 A, Rg = 5 Ω m s) C E ( s t (n sses Eon Time 100 tf y Lo 0.1 Eoff ng td(off) erg chi En Swit td(on) tr withing VI C =C1 =0 3A0,0 R Vg, =V 5G EΩ = 15 V S C 10 0.01 25 50 75 100 125 150 25 50 75 100 125 150 Case Temperature Tc (°C) Case Temperature Tc (°C) (Inductive load) (Inductive load) R07DS0158EJ0400 Rev.4.00 Page 5 of 9 Apr 19, 2012

RJH60D1DPP-M0 Preliminary Typical Capacitance vs. Collector to Emitter Voltage Dynamic Input Characteristics (Typical) 1000 V) 800 16 acitance C (pF) 11000 Tc = 25°C CCioeess Emitter Voltage V (CE 640000 VVITCCcCE = C= 1 =20 53 A°0C0 V VGE 182 (V)mitter Voltage VGE Cap VGE = 0 V Cres ector to 200 4 ate to E f = 1 MHz oll G 1 C 0 0 0 50 100 150 200 250 300 0 4 8 12 16 20 Collector to Emitter Voltage V (V) Gate Charge Qg (nc) CE Reverse Recovery Time vs. Reverse Recovery Charge vs. Diode Current Slope (Typical) Diode Current Slope (Typical) 300 C) 0.5 s) VCC = 300 V μ VCC = 300 V me t (nrr 225000 IF = 10 A ge Q (rr 0.4 IF = 10 A Ti har 0.3 y C Recover 110500 Tc = 150°C covery 0.2 Tc = 150°C e e R ers 50 se 0.1 ev 25°C er 25°C R v e 0 R 0 0 40 80 120 160 200 0 40 80 120 160 200 Diode Current Slope diF/dt (A/μs) Diode Current Slope diF/dt (A/μs) Reverse Recovery Current vs. Diode Current Slope (Typical) Forward Current vs. Forward Voltage (Typical) 16 40 A) V = 300 V ent I (rr 12 IFC =C 10 A (A)F 30 Tc = 25°C 150°C Curr nt I ery 8 urre 20 cov Tc = 150°C d C verse Re 4 25°C Forwar 10 VCE = 0 V e Pulse Test R 0 0 0 40 80 120 160 200 0 1 2 3 4 Diode Current Slope diF/dt (A/μs) C-E Diode Forward Voltage VCEF (V) R07DS0158EJ0400 Rev.4.00 Page 6 of 9 Apr 19, 2012

RJH60D1DPP-M0 Preliminary Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) (t)s 10 γe Tc = 25°C c n a d e p m 1 D = 1 al I 0.5 m nt Ther 000..2.015 θθjj –– cc( =t) 4=. 1γs°C (t/)W (cid:129) ,θ Tj c– =c 25°C e 0.1 si PW an 0.02 PDM D = T Tr 0.01 d 1 shot pulse PW e z T ali 0.01 m or 100 μ 1 m 10 m 100 m 1 10 100 N Pulse Width PW (s) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) γ (t)s 10 Tc = 25°C e c n a d e p D = 1 m 1 al I 0.5 m er 0.2 θj – c(t) = γs (t) (cid:129) θj – c Th 0.1 θj – c = 7.2°C/W, Tc = 25°C ent 0.1 0.05 ansi PDM D = PTW d Tr 1 sh0o.00t 1.p0u2lse PW e T z ali 0.01 m 100 μ 1 m 10 m 100 m 1 10 100 or N Pulse Width PW (s) R07DS0158EJ0400 Rev.4.00 Page 7 of 9 Apr 19, 2012

RJH60D1DPP-M0 Preliminary Switching Time Test Circuit Waveform V 90% Diode clamp GE 10% L I C D.U.T V 90% 90% CC Rg 10% 10% td(off) tf td(on) tr Diode Reverse Recovery Time Test Circuit Waveform V CC I F D.U.T I L diF/dt trr F 0 I rr 0.5 I rr Rg 0.9 Irr R07DS0158EJ0400 Rev.4.00 Page 8 of 9 Apr 19, 2012

RJH60D1DPP-M0 Preliminary Package Dimension Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.] Unit: mm TO-220FL ⎯ PRSS0003AF-A TO-220FL 1.5g 10.0 ± 0.3 2.8 ± 0.2 0.3 3.0 ± 0.3 ± 6.50.3 ± 0 φ 3.2 ± 0.2 5. 1 3 0. 1.15 ± 0.2 5 ± ± 0. 3.6 1.15 ± 0.2 5 2. 1 0.75 ± 0.15 0.40 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 2 0. ± 5 2 4. 0. ± 6 2. Ordering Information Orderable Part No. Quantity Shipping Container RJH60D1DPP-M0#T2 600 pcs Box (Tube) R07DS0158EJ0400 Rev.4.00 Page 9 of 9 Apr 19, 2012

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