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RGF1B产品简介:
ICGOO电子元器件商城为您提供RGF1B由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 RGF1B价格参考。Fairchild SemiconductorRGF1B封装/规格:二极管 - 整流器 - 单, 标准 表面贴装 二极管 100V 1A DO-214AC(SMA)。您可以下载RGF1B参考资料、Datasheet数据手册功能说明书,资料中有RGF1B 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE FAST 100V 1A DO214AC整流器 100V 1a Rectifier Glass Passivated |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | Fairchild Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,整流器,Fairchild Semiconductor RGF1B- |
数据手册 | |
产品型号 | RGF1B |
PCN组件/产地 | |
不同If时的电压-正向(Vf) | 1.3V @ 1A |
不同 Vr、F时的电容 | 8.5pF @ 4V,1MHz |
不同 Vr时的电流-反向漏电流 | 5µA @ 100V |
二极管类型 | 标准 |
产品 | Fast Recovery Rectifiers |
产品种类 | 整流器 |
供应商器件封装 | DO-214AC(SMA) |
其它名称 | RGF1BCT |
功率耗散 | 1.76 W |
包装 | 剪切带 (CT) |
单位重量 | 106 mg |
反向恢复时间(trr) | 150ns |
反向电压 | 100 V |
反向电流IR | 5 uA |
商标 | Fairchild Semiconductor |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | DO-214AC,SMA |
封装/箱体 | SMA |
工作温度-结 | -65°C ~ 175°C |
工厂包装数量 | 7500 |
恢复时间 | 150 ns |
最大工作温度 | + 175 C |
最大浪涌电流 | 30 A |
最小工作温度 | - 65 C |
标准包装 | 1 |
正向电压下降 | 1.3 V |
正向连续电流 | 1 A |
热阻 | 28°C/W Jl |
电压-DC反向(Vr)(最大值) | 100V |
电流-平均整流(Io) | 1A |
系列 | RGF1B |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Single |
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
R G F 1 July 2016 A - R G F 1 RGF1A - RGF1M M — Fast Rectifiers F a s t R e c Features t i f i e • Glass Passivated Junction r s • For Surface Mounted Application • Low Forward Voltage Drop • High Current Capability SMA/DO-214AC • Easy Pick and Place COLOR BAND DENOTES CATHODE • High Surge Current Capability Ordering Information Part Number Top Mark Package Packing Method RGF1A RGF1A DO-214AC (SMA) Tape and Reel RGF1B RGF1B DO-214AC (SMA) Tape and Reel RGF1D RGF1D DO-214AC (SMA) Tape and Reel RGF1G RGF1G DO-214AC (SMA) Tape and Reel RGF1J RGF1J DO-214AC (SMA) Tape and Reel RGF1K RGF1K DO-214AC (SMA) Tape and Reel RGF1M RGF1M DO-214AC (SMA) Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Value Symbol Parameter Unit RGF1 RGF1 RGF1 RGF1 RGF1 RGF1 RGF1 A B D G J K M V Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V RRM Average Rectified Forward Current I 1.0 A F(AV) at T = 125C L Non-Repetitive Peak Forward Surge I Current: 8.3 ms Single Half-Sine 30 A FSM Wave T Storage Temperature Range -65 to +175 C STG T Operating Junction Temperature -65 to +175 C J © 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com RGF1A - RGF1M Rev. 2.5
R G Thermal Characteristics F 1 Values are at T = 25°C unless otherwise noted. A A - Symbol Parameter Value Unit R G P Power Dissipation 1.76 W F D 1 R Thermal Resistance, Junction-to-Ambient(1) 85 C/W M JA R Thermal Resistance, Junction-to-Lead(1) 28 C/W — JL F Note: a s 1. Device mounted on FR-4 PCB 0.013 mm. t R e c t i f Electrical Characteristics i e r s Values are at T = 25°C unless otherwise noted. A Value Symbol Parameter Conditions Unit RGF1 RGF1 RGF1 RGF1 RGF1 RGF1 RGF1 A B D G J K M V Forward Voltage I = 1.0 A 1.3 V F F Reverse Recovery I = 0.5 A, I = 1.0 A, t F R 150 250 500 ns rr Time I = 0.25 A rr Reverse Current TA = 25C 5.0 I A R at Rated VR TA = 125C 100 V = 4.0 V, C Total Capacitance R 8.5 pF T f = 1.0 MHz © 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com RGF1A - RGF1M Rev. 2.5 2
R G Typical Performance Characteristics F 1 A - R A]1.25 A]50 G [F [M F ectified Forward Current, I000..27.1555 O(CRIP5NON..EC0D P S.0UxBPI. S2CE.5 T.MTRx0I I VO 0VmP.EEUA2m " NDOL )T ORAEARDDEAS orward Surge Current, IFS12340000 1M — Fast Rec verage R 00 25 50 75 100 125 150 175 Peak F 01 2 5 10 20 50 100 tifier A Ambient Temperature [ºC] Number of Cycles at 60Hz s Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current 20 30 10 10 ward Current, I [A]F 0.11 T A = 125 º C T A = 25 º C e Current, I [A](cid:88)R 0.11 TT AA == 110500 ºº CC For vers Pulse Width = 300µµµµs Re T A = 25 º C 2% Duty Cycle 0.01 0.01 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 140 Forward Voltage, V [V] Percent of Rated Peak Reverse Voltage [%] F Figure 3. Foward Voltage Characteristics Figure 4. Reverse Current vs. Reverse Voltage 50 F] p20 [T C e, 10 c n a cit 5 a p a C al 2 ot T 1 1 2 5 10 20 50 100 Reverse Voltage, V [V] R Figure 5. Total Capacitance © 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com RGF1A - RGF1M Rev. 2.5 3
5.60 B B 0.13 M C B A 4.80 2.65 2.95 1.65 B 1.75 2.50 1.20 4.30 4.75 A B 4.00 LAND PATTERN RECOMMENDATION TOP VIEW 2.50 MAX A 2.20 NOTES: 1.90 A. EXCEPT WHERE NOTED, CONFORMS TO JEDEC DO214 VARIATION AC. 0.203 0.30 B DOES NOT COMPLY JEDEC STANDARD B 0.050 0.05 VALUE. C C. ALL DIMENSIONS ARE IN MILLIMETERS. 2.05 0.13 M C B A D. DIMENSIONS ARE EXCLUSIVE OF 1.95 BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. SIDE VIEW E. DIMENSIONS AND TOLERANCE AS PER ASME Y14.5-2009. 8° E. LAND PATTERN STD. DIOM5025X231M 0° F. DRAWING FILENAME: MKT-DO214ACrev2 R0.15 4X GAGE PLANE 0.45 0.41 0.15 1.52 8° 0.75 0° DETAIL A SCALE 20 : 1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1
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