ICGOO在线商城 > 电阻器 > 芯片电阻 - 表面安装 > RG3216P-68R0-B-T1
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RG3216P-68R0-B-T1产品简介:
ICGOO电子元器件商城为您提供RG3216P-68R0-B-T1由SUSUMU INTERNATIONAL设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 RG3216P-68R0-B-T1价格参考¥0.82-¥3.66。SUSUMU INTERNATIONALRG3216P-68R0-B-T1封装/规格:芯片电阻 - 表面安装, 68 Ohms ±0.1% 0.25W,1/4W 薄膜 芯片电阻 1206(3216 公制) 耐硫,汽车级 AEC-Q200 汽车认证 薄膜。您可以下载RG3216P-68R0-B-T1参考资料、Datasheet数据手册功能说明书,资料中有RG3216P-68R0-B-T1 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | RES 68 OHM 1/4W .1% 1206 |
产品分类 | |
品牌 | Susumu |
数据手册 | |
产品图片 | |
产品型号 | RG3216P-68R0-B-T1 |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
RoHS指令信息 | |
产品系列 | RG |
产品培训模块 | http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=7067 |
产品目录绘图 | |
产品目录页面 | |
供应商器件封装 | 1206 |
其它名称 | RG32P68BDKR |
功率(W) | 0.25W,1/4W |
包装 | Digi-Reel® |
大小/尺寸 | 0.126" 长 x 0.063" 宽(3.20mm x 1.60mm) |
容差 | ±0.1% |
封装/外壳 | 1206(3216 公制) |
成分 | |
标准包装 | 1 |
温度系数 | ±25ppm/°C |
特性 | - |
特色产品 | http://www.digikey.com/cn/zh/ph/Susumu/RGseries.html |
电阻(Ω) | 68 |
端子数 | 2 |
高度 | 0.020"(0.50mm) |
Metal thin film chip resistors (the highest precision) ■RG series AEC-Q200 Compliant Features ・Long term stability with inorganic passivation ・Less than ±0.1% drift after 10000 hors of reliability test ・High precision resistance tolerance: ±0.05%, very small TCR: ±5ppm/℃ mount resistors ・ATphpinl ifcilma tsitoruncsture enabling low noise and anti-sulfur m surface ・Automotive electronics Thin fil ・Industrial measurement instrumentation, industrial machines ・Various sensors, medical electronics es ◆Part numbering system eri s G R RG 1608 N - 102 - B - T5 Packaging quantity: Series code T5(5,000pcs), T10(10,000pcs) Size: RG1005, RG1608, RG2012, RG3216 Resistance tolerance Temperature coefficient of resistance Nominal resistance value (E-24: 3 digit, E-96: 4 digit, RG3216: all 4 digit) ◆Electrical Specification Temperature Type Power ratings ocf oreesffiisctiaennct e Resistance range(Ω) Resistance tolerance(%) Maximum Resistance Operating Pakaging voltage value series temperature quantity Low Regular High (ppm/°C) ±0.02% (P) ±0.05% (W) ±0.1% (B) ±0.5%(D) ±5(V) 100≦R<3k ±10(N) 100≦R<3k 47≦R<100k T5 RG1005 1/32W 1/16W 1/8W 75V ±25(P) 100≦R<3k 47≦R<100k 47≦R<150k T10 ±100(R) ー ー ー 10≦R<47 ±5(V) 100≦R<5.1k ±10(N) 100≦R<5.1k 47≦R≦270k RG1608 1/16W 1/10W 1/6W 100V ±25(P) 100≦R<5.1k 47≦R≦270k 47≦R≦332k 47≦R≦1M ±50(Q) ー ー ー 10≦R<47 E-24, -55℃ ±5(V) 100≦R<10.2k E-96 〜 155℃ ±10(N) 100≦R<10.2k 47≦R≦475k RG2012 1/10W 1/8W 1/4W 150V T5 ±25(P) 100≦R<10.2k 47≦R≦475k 47≦R≦2.7M ±50(Q) ー ー ー 10≦R<47 ±5(V) 100≦R<33.2k ±10(N) 100≦R<33.2k 47≦R≦1M RG3216 1/8W 1/4W ー 200V ±25(P) 100≦R<33.2k 47≦R≦1M 47≦R≦5.1M ±50(Q) ー ー ー 10≦R<47 ◆Dimensions L Size Type L W a b t (inch) RG1005 0402 1.00+0.1/−0.05 0.50±0.05 0.20±0.10 0.25±0.05 0.35±0.05 W RG1608 0603 1.60±0.20 0.80±0.20 0.30±0.20 0.30±0.20 0.40±0.10 a RG2012 0805 2.00±0.20 1.25±0.20 0.40±0.20 0.40±0.20 0.40±0.10 RG3216 1206 3.20±0.20 1.60±0.20 0.50±0.25 0.50±0.20 0.40±0.10 t (unit:mm) b 15
◆Reliability specification Low Regular High Typical Test Items Condition (test methods) ≦47Ω ≧47Ω ≦47Ω ≧47Ω ≦47Ω ≧47Ω Low *1 Short time overload 2.5 x rated voltage, 5 seconds ±0.10% ±0.05% ±0.10% ±0.05% ー ±0.10% ±(0.01%) Life (biased) 70℃, rated voltage*,1 90min on 30min off, 1000hours ±0.25% ±0.10% ±0.50% ±0.25% ー ±0.50% ±(0.01%) 85℃, 85%RH, 1/10 of rated power, High temperature ±0.25% ±0.10% ±0.50% ±0.25% ー ±0.50% ±(0.05%) high humidity 90min on 30min off, 1000hours Temperature shock -55℃ (30min)〜125℃ (30min) 1000cycles ±0.25% ±0.10% ±0.25% ±0.10% ー ±0.10% ±(0.01%) Th Hexigpho steumreperature 155℃, no bias, 1000hours ±0.25% ±0.10% ±0.25% ±0.10% ー ±0.10% ±(0.01%) in film Resistance to 260±5℃, 10 seconds (reflow) ±0.1% ±0.1% ±0.1% ±0.1% ー ±0.1% ±(0.01%) surfa soldering heat ce m *1 Rated voltage is given by E= R x P E= rated voltage (V), R=nominal resistance value(Ω), P=rated power(W) ou If rated voltage exceeds maximum voltage /element, maximum voltage/element is the rated voltage. nt re ◆10000 hour reliability test data sistors R ○Biased life test ○High temperature high humidity (biased) G s e 0.50 High temoperature life test (85℃) 0.50 High temperature high humidity bias (THB 85℃ 85%) rie s ) 0.40 Sample : RG1608series ) 0.40 Sample : RG1608series % Test Temperature85℃ % Test Temperature85℃ Humidity85%RH e drift( 000...123000 conditions:RRn=aatt1ee0dd0 vpoolwtaegre= 09.01 Wmin. on/30min. off e drift( 000...123000 c onditions :1Rn=/a1t1e00d 0r paotewde pr=ow0.e1rW 90min.on/30min. off c c an 0.00 an 0.00 sist−0.10 sist−0.10 Re−0.20 Re−0.20 −0.30 1kΩ 100kΩ −0.30 1kΩ 100kΩ 10kΩ 330kΩ 10kΩ 330kΩ −0.40 56kΩ −0.40 56kΩ −0.50 −0.50 10 100 1000 3000 10000 10 100 1000 3000 10000 Test duration(h) Test duration(h) ○Temperature shock ○High temperature exposure Temperature shock High temperature exposure(155℃) 0.50 0.50 ) 0.40 Sample : RG1608series ) 0.40 Sample : RG1608series Resistance drift(%−−000000......210123000000 Tc oenstd itions :-+n5=515℃20(5℃3(0m30inm)→in)r→oormoo tmem t ep(m. p(3m. 3inm)→in) Resistance drift(%−−000000......210123000000 Tcoenstd itions:Tn=em10pe0rature155℃ −0.30 56kΩ −0.30 11k0ΩkΩ 130300kkΩΩ −0.40 100kΩ −0.40 56kΩ −0.50 −0.50 10 100 1000 10000 10 100 1000 3000 10000 Number of cycles Test duration(h) ◆Derating Curve %) High power application er (100 RHeigghu plarre pcioswioenr application w o p d e at 50 o r o t ati R 0 −55 0 7085 155 Ambient temperature (℃) ◆Maximum pulse power limit 100 Test procedure se W) Voltage pulse is applied to the test samples mounted ul(10 m pmit on the test board. ximuwer li 1 1005 type After each pulse, resistance drift is measured. Pulse Mapo 1608 type voltage is increased until the drift exceeds +/-0.5%. 2012 type 3216 type The power at that voltage is defined as the 0.1 maximum pulse power. 0.0001 0.001 0.01 0.1 1 10 Pulse duration (seconds) 16
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