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  • 型号: RG1608N-201-W-T1
  • 制造商: SUSUMU INTERNATIONAL
  • 库位|库存: xxxx|xxxx
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RG1608N-201-W-T1产品简介:

ICGOO电子元器件商城为您提供RG1608N-201-W-T1由SUSUMU INTERNATIONAL设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 RG1608N-201-W-T1价格参考。SUSUMU INTERNATIONALRG1608N-201-W-T1封装/规格:芯片电阻 - 表面安装, 200 Ohms ±0.05% 0.1W,1/10W 薄膜 芯片电阻 0603(1608 公制) 耐硫,汽车级 AEC-Q200 汽车认证 薄膜。您可以下载RG1608N-201-W-T1参考资料、Datasheet数据手册功能说明书,资料中有RG1608N-201-W-T1 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

电阻器

描述

RES 200 OHM 1/10W .05% 0603 SMD薄膜电阻器 - SMD 1/10W Regular 200 ohm 0.05% 10ppm

产品分类

芯片电阻 - 表面安装

品牌

Susumu

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

薄膜电阻器,薄膜电阻器 - SMD,Susumu RG1608N-201-W-T1RG

数据手册

点击此处下载产品Datasheet

产品型号

RG1608N-201-W-T1

产品

Precision Resistors Thin Film SMD

产品培训模块

http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=7067http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=24789

产品目录绘图

产品目录页面

点击此处下载产品Datasheet

产品种类

薄膜电阻器 - SMD

供应商器件封装

0603

其它名称

RG16N200WDKR

功率(W)

0.1W,1/10W

功率额定值

62.5 mW (1/16 W)

包装

Digi-Reel®

商标

Susumu

外壳代码-in

0603

外壳代码-mm

1608

外壳宽度

0.8 mm

外壳长度

1.6 mm

外壳高度

0.4 mm

大小/尺寸

0.063" 长 x 0.031" 宽(1.60mm x 0.80mm)

容差

0.05 %

封装

Reel

封装/外壳

0603(1608 公制)

封装/箱体

0603 (1608 metric)

工作温度范围

- 55 C to + 155 C

工具箱

/product-detail/zh/RG1608NW-KIT/SSM1608NW-KIT-ND/1304512/product-detail/zh/RG1608NW-1-KIT/RG1608NW-1-KIT-ND/701232

工厂包装数量

1000

成分

薄膜

标准包装

1

温度系数

10 PPM / C

特性

-

特色产品

http://www.digikey.com/cn/zh/ph/Susumu/RGseries.html

电压额定值

75 V

电阻

200 Ohms

电阻(Ω)

200

端子数

2

类型

Ultra Precision Thin Film Chip Resistor

系列

RG

高度

0.020"(0.50mm)

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PDF Datasheet 数据手册内容提取

Metal thin film chip resistors (the highest precision) ■RG series AEC-Q200 Compliant Features ・Long term stability with inorganic passivation ・Less than ±0.1% drift after 10000 hors of reliability test ・High precision resistance tolerance: ±0.05%, very small TCR: ±5ppm/℃ mount resistors ・ATphpinl ifcilma tsitoruncsture enabling low noise and anti-sulfur m surface ・Automotive electronics Thin fil ・Industrial measurement instrumentation, industrial machines ・Various sensors, medical electronics es ◆Part numbering system eri s G R RG 1608 N - 102 - B - T5 Packaging quantity: Series code T5(5,000pcs), T10(10,000pcs) Size: RG1005, RG1608, RG2012, RG3216 Resistance tolerance Temperature coefficient of resistance Nominal resistance value (E-24: 3 digit, E-96: 4 digit, RG3216: all 4 digit) ◆Electrical Specification Temperature Type Power ratings ocf oreesffiisctiaennct e Resistance range(Ω) Resistance tolerance(%) Maximum Resistance Operating Pakaging voltage value series temperature quantity Low Regular High (ppm/°C) ±0.02% (P) ±0.05% (W) ±0.1% (B) ±0.5%(D) ±5(V) 100≦R<3k ±10(N) 100≦R<3k 47≦R<100k T5 RG1005 1/32W 1/16W 1/8W 75V ±25(P) 100≦R<3k 47≦R<100k 47≦R<150k T10 ±100(R) ー ー ー 10≦R<47 ±5(V) 100≦R<5.1k ±10(N) 100≦R<5.1k 47≦R≦270k RG1608 1/16W 1/10W 1/6W 100V ±25(P) 100≦R<5.1k 47≦R≦270k 47≦R≦332k 47≦R≦1M ±50(Q) ー ー ー 10≦R<47 E-24, -55℃ ±5(V) 100≦R<10.2k E-96 〜 155℃ ±10(N) 100≦R<10.2k 47≦R≦475k RG2012 1/10W 1/8W 1/4W 150V T5 ±25(P) 100≦R<10.2k 47≦R≦475k 47≦R≦2.7M ±50(Q) ー ー ー 10≦R<47 ±5(V) 100≦R<33.2k ±10(N) 100≦R<33.2k 47≦R≦1M RG3216 1/8W 1/4W ー 200V ±25(P) 100≦R<33.2k 47≦R≦1M 47≦R≦5.1M ±50(Q) ー ー ー 10≦R<47 ◆Dimensions L Size Type L W a b t (inch) RG1005 0402 1.00+0.1/−0.05 0.50±0.05 0.20±0.10 0.25±0.05 0.35±0.05 W RG1608 0603 1.60±0.20 0.80±0.20 0.30±0.20 0.30±0.20 0.40±0.10 a RG2012 0805 2.00±0.20 1.25±0.20 0.40±0.20 0.40±0.20 0.40±0.10 RG3216 1206 3.20±0.20 1.60±0.20 0.50±0.25 0.50±0.20 0.40±0.10 t (unit:mm) b 15

◆Reliability specification Low Regular High Typical Test Items Condition (test methods) ≦47Ω ≧47Ω ≦47Ω ≧47Ω ≦47Ω ≧47Ω Low *1 Short time overload 2.5 x rated voltage, 5 seconds ±0.10% ±0.05% ±0.10% ±0.05% ー ±0.10% ±(0.01%) Life (biased) 70℃, rated voltage*,1 90min on 30min off, 1000hours ±0.25% ±0.10% ±0.50% ±0.25% ー ±0.50% ±(0.01%) 85℃, 85%RH, 1/10 of rated power, High temperature ±0.25% ±0.10% ±0.50% ±0.25% ー ±0.50% ±(0.05%) high humidity 90min on 30min off, 1000hours Temperature shock -55℃ (30min)〜125℃ (30min) 1000cycles ±0.25% ±0.10% ±0.25% ±0.10% ー ±0.10% ±(0.01%) Th Hexigpho steumreperature 155℃, no bias, 1000hours ±0.25% ±0.10% ±0.25% ±0.10% ー ±0.10% ±(0.01%) in film Resistance to 260±5℃, 10 seconds (reflow) ±0.1% ±0.1% ±0.1% ±0.1% ー ±0.1% ±(0.01%) surfa soldering heat ce m *1 Rated voltage is given by E= R x P E= rated voltage (V), R=nominal resistance value(Ω), P=rated power(W) ou If rated voltage exceeds maximum voltage /element, maximum voltage/element is the rated voltage. nt re ◆10000 hour reliability test data sistors R ○Biased life test ○High temperature high humidity (biased) G s e 0.50 High temoperature life test (85℃) 0.50 High temperature high humidity bias (THB 85℃ 85%) rie s ) 0.40 Sample : RG1608series ) 0.40 Sample : RG1608series % Test Temperature85℃ % Test Temperature85℃ Humidity85%RH e drift( 000...123000 conditions:RRn=aatt1ee0dd0 vpoolwtaegre= 09.01 Wmin. on/30min. off e drift( 000...123000 c onditions :1Rn=/a1t1e00d 0r paotewde pr=ow0.e1rW 90min.on/30min. off c c an 0.00 an 0.00 sist−0.10 sist−0.10 Re−0.20 Re−0.20 −0.30 1kΩ 100kΩ −0.30 1kΩ 100kΩ 10kΩ 330kΩ 10kΩ 330kΩ −0.40 56kΩ −0.40 56kΩ −0.50 −0.50 10 100 1000 3000 10000 10 100 1000 3000 10000 Test duration(h) Test duration(h) ○Temperature shock ○High temperature exposure Temperature shock High temperature exposure(155℃) 0.50 0.50 ) 0.40 Sample : RG1608series ) 0.40 Sample : RG1608series Resistance drift(%−−000000......210123000000 Tc oenstd itions :-+n5=515℃20(5℃3(0m30inm)→in)r→oormoo tmem t ep(m. p(3m. 3inm)→in) Resistance drift(%−−000000......210123000000 Tcoenstd itions:Tn=em10pe0rature155℃ −0.30 56kΩ −0.30 11k0ΩkΩ 130300kkΩΩ −0.40 100kΩ −0.40 56kΩ −0.50 −0.50 10 100 1000 10000 10 100 1000 3000 10000 Number of cycles Test duration(h) ◆Derating Curve %) High power application er (100 RHeigghu plarre pcioswioenr application w o p d e at 50 o r o t ati R 0 −55 0 7085 155 Ambient temperature (℃) ◆Maximum pulse power limit 100 Test procedure se W) Voltage pulse is applied to the test samples mounted ul(10 m pmit on the test board. ximuwer li 1 1005 type After each pulse, resistance drift is measured. Pulse Mapo 1608 type voltage is increased until the drift exceeds +/-0.5%. 2012 type 3216 type The power at that voltage is defined as the 0.1 maximum pulse power. 0.0001 0.001 0.01 0.1 1 10 Pulse duration (seconds) 16

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