Metal thin film chip resistors (the highest precision) ■RG series AEC-Q200 Compliant Features ・Long term stability with inorganic passivation ・Less than ±0.1% drift after 10000 hors of reliability test ・High precision resistance tolerance: ±0.05%, very small TCR: ±5ppm/℃ mount resistors ・ATphpinl ifcilma tsitoruncsture enabling low noise and anti-sulfur m surface ・Automotive electronics Thin fil ・Industrial measurement instrumentation, industrial machines ・Various sensors, medical electronics es ◆Part numbering system eri s G R RG 1608 N - 102 - B - T5 Packaging quantity: Series code T5(5,000pcs), T10(10,000pcs) Size: RG1005, RG1608, RG2012, RG3216 Resistance tolerance Temperature coefficient of resistance Nominal resistance value (E-24: 3 digit, E-96: 4 digit, RG3216: all 4 digit) ◆Electrical Specification Temperature Power ratings coefficient Resistance range（Ω） Resistance tolerance（%） Type of resistance Maximum Resistance Operating Pakaging voltage value series temperature quantity Low Regular High (ppm/°C） ±0.05% (W) ±0.1% (B) ±0.5%(D) ±5（V） 100≦R＜3k T5 ±10（N） 47≦R≦100k RG１００５ 1/32W 1/16W 1/8W 75V ±25（P） 47≦R≦150k T10 ±100（R） ー ー 10≦R＜47 ±5（V） 100≦R＜5.1k ±10（N） 47≦R≦274k RG１６０８ 1/16W 1/10W 1/6W 100V ±25（P） 47≦R≦274k 47≦R≦1M ±50（Q） ー ー 10≦R＜47 E-24, E-96 -55℃ ˜ 155℃ ±5（V） 100≦R＜10.2k ±10（N） 47≦R≦475k RG２０１２ 1/10W 1/8W 1/4W 150V T5 ±25（P） 47≦R≦475k 47≦R≦2.7M ±50（Q） ー ー 10≦R＜47 ±5（V） 100≦R≦33.2k ±10（N） 47≦R≦1M RG３２１６ 1/8W 1/4W ー 200V ±25（P） 47≦R≦5.1M ±50（Q） ー ー 10≦R＜47 ◆Dimensions L Size Type L W a b t (inch) RG1005 0402 1.00＋0.1/−0.05 0.50±0.05 0.20±0.10 0.25±0.05 0.35±0.05 W RG1608 0603 1.60±0.20 0.80±0.20 0.30±0.20 0.30±0.20 0.40±0.10 a RG2012 0805 2.00±0.20 1.25±0.20 0.40±0.20 0.40±0.20 0.40±0.10 RG3216 1206 3.20±0.20 1.60±0.20 0.50±0.25 0.50±0.20 0.40±0.10 t （unit：mm） b 15

◆Reliability specification Low Regular High Typical Test Items Condition (test methods) ≦47Ω ≧47Ω ≦47Ω ≧47Ω ≦47Ω ≧47Ω Low *1 Short time overload 2.5 x rated voltage, 5 seconds ±0.10% ±0.05% ±0.10% ±0.05% ー ±0.10% ±(0.01%) Life (biased) 70℃, rated voltage*,1 90min on 30min off, 1000hours ±0.25% ±0.10% ±0.50% ±0.25% ー ±0.50% ±(0.01%) 85℃, 85%RH, 1/10 of rated power, High temperature ±0.25% ±0.10% ±0.50% ±0.25% ー ±0.50% ±(0.05%) high humidity 90min on 30min off, 1000hours Temperature shock -55℃ (30min)〜125℃ (30min) 1000cycles ±0.25% ±0.10% ±0.25% ±0.10% ー ±0.10% ±(0.01%) Th Hexigpho steumreperature 155℃, no bias, 1000hours ±0.25% ±0.10% ±0.25% ±0.10% ー ±0.10% ±(0.01%) in film Resistance to 260±5℃, 10 seconds (reflow) ±0.1％ ±0.1％ ±0.1％ ±0.1％ ー ±0.1％ ±(0.01%) surfa soldering heat ce m *1 Rated voltage is given by E= R x P E= rated voltage (V), R=nominal resistance value(Ω), P=rated power(W) ou If rated voltage exceeds maximum voltage /element, maximum voltage/element is the rated voltage. nt re ◆10000 hour reliability test data sistors R ○Biased life test ○High temperature high humidity (biased) G s e 0.50 High temoperature life test (85℃) 0.50 High temperature high humidity bias (THB 85℃ 85％） rie s ） 0.40 Sample : RG1608series ） 0.40 Sample : RG1608series % Test Temperature85℃ % Test Temperature85℃ Humidity85％RH e drift（ 000...123000 conditions:RRn=aatt1ee0dd0 vpoolwtaegre= 09.01 Wmin. on/30min. off e drift（ 000...123000 c onditions :1Rn=/a1t1e00d 0r paotewde pr=ow0.e1rW 90min.on/30min. off c c an 0.00 an 0.00 sist−0.10 sist−0.10 Re−0.20 Re−0.20 −0.30 1kΩ 100kΩ −0.30 1kΩ 100kΩ 10kΩ 330kΩ 10kΩ 330kΩ −0.40 56kΩ −0.40 56kΩ −0.50 −0.50 10 100 1000 3000 10000 10 100 1000 3000 10000 Test duration(h) Test duration(h) ○Temperature shock ○High temperature exposure Temperature shock High temperature exposure(155℃) 0.50 0.50 ） 0.40 Sample : RG1608series ） 0.40 Sample : RG1608series Resistance drift（%−−000000......210123000000 Tc oenstd itions :-＋n5=515℃20（5℃3（0m30inm）→in）r→oormoo tmem t ep（m. p（3m. 3inm）→in） Resistance drift（%−−000000......210123000000 Tcoenstd itions:Tn=em10pe0rature155℃ −0.30 56kΩ −0.30 11k0ΩkΩ 130300kkΩΩ −0.40 100kΩ −0.40 56kΩ −0.50 −0.50 10 100 1000 10000 10 100 1000 3000 10000 Number of cycles Test duration(h) ◆Derating Curve ％) High power application wer ( 100 RHeigghu plarre pcioswioenr application o p d e at 50 o r o t ati R 0 -55 0 50 7085 100 155 Ambient temperature (℃) ◆Maximum pulse power limit 100 Test procedure se W） Voltage pulse is applied to the test samples mounted ul（10 m pmit on the test board. ximuwer li 1 1005 type After each pulse, resistance drift is measured. Pulse Mapo 1608 type voltage is increased until the drift exceeds +/-0.5%. 2012 type 3216 type The power at that voltage is defined as the 0.1 maximum pulse power. 0.0001 0.001 0.01 0.1 1 10 Pulse duration (seconds) 16