RF505B6S Data Sheet Super Fast Recovery Diode RF505B6S Series Dimensions（Unit : mm） Land size figure (Unit : mm) Standard Fast Recovery 6.0 0 Applications (2) 6. General rectification 1.6 1.6 0 2. 0 (1) (3) 3. Features CPD 1)Power mold type. (CPD) 2.3 2.3 2)High switching speed 3)Low Reverse current Structure (2) Production month Construction Silicon epitaxial planar (1) (3) Taping dimensions（Unit : mm） Absolute maximum ratings（Tc=25C） Parameter Symbol Conditions Limits Unit Repetitive peak Reverse voltage V Duty0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified forward current Io 60Hz half sin wave,resistive load Tc=42C 5 A 60Hz half sin wave, Non-repetitive Forward current surge peak I 50 A FSM one cycle peak value, Tj=25 C Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C Electrical characteristics（Tj=25C） Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage V I =5.0A - 1.3 1.7 V F F Reverse current IR VR=600V - 0.05 10 μA Reverse recovery time trr IF=0.5A,IR=1A,Irr=0.25×IR - 22 30 ns Thermal resistance Rth(j-l) junction to lead - － 12 C/W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.A

RF505B6S 　 Data Sheet Electrical characteristic curves 100 100000 1000 Tj=150C Tj=125C f=1MHz FORWARD CURRENT:I(A)F 01.101 Tj=150C Tj=75TCj=25C REVERSE CURRENT:I(nA)R11010010000000 Tj=125C TTjj==2755CC CAPACITANCE BETWEENTERMINALS:Ct(pF)10100 0.01 1 1 0 500 1000 1500 2000 2500 0 100 200 300 400 500 600 0 5 10 15 20 25 30 FORWARD VOLTAGE:VF(mV) REVERSE VOLTAGE:VR(V) REVERSE VOLTAGE:VR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 1400 100 170 Tj=25C Tj=25C Tj=25C (mV)ORWARD VOLTAGE:VF 1111223305050000 n=IF2=05pAcs REVERSE CURRENT:I(nA)R 10 AVE:33.7nA VnR==2600p0cVs CAPACITANCE BETWEENTERMINALS:Ct(pF)111456000 AVE:150.6pF nfV==1R1=M00pHVczs F AVE:1297mV 130 1150 1100 1 120 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 PEAK SURGEWARD CURRENT:I(A)FSM 112205050000 Ifsm 8.3ms1cyc SE RECOVERY TIME:trr(ns) 11220505 AVE:22.0ns IrnTrI=F=Ij==R01=20.0215.p55AcA×CsIR PEAK SURGE(A)WARD CURRENT:IFSM11000 Ifsm OR AVE:107.5A ER OR 8.3ms 8.3ms F 50 EV 5 F 1cyc R 0 0 1 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES IFSM DISRESION MAP IFSM-CYCLE CHARACTERISTICS 1000 30 100 No break at 30kV On glass-epoxy board PEAK SURGEFORWARD CURRENT:I(A)FSM 100 Ifsm t ELECTROSTATICDISCHARGE TEST ESD(KV) 112250505 AVE:19.9kV TRANSIENTERMAL IMPEDANCE:Rth (C/W)110 IM=1010mmsA time IF=1.5RRAtthh((jj--ca)) HA 300us 0 T 10 C=200pF C=100pF 0.1 1 10 100 R=0 R=1.5k 0.001 0.01 0.1 1 10 100 1000 TIME:t(ms) TIME:t(s) IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.A

RF505B6S 　 Data Sheet 0A Io 0V t VR D=t/T 7 9 9 VR=480V FORWARD POWERDISSIPATION:Pf(W) 23456 D=0.05 D=0.1half Dsi=n0 w.2ave D=0.5 D=0.8D.C. AVERAGE RECTIFIEDFORWARD CURRENT:Io(A)2345678 DD==00D..21.C. D=0.8 00AV Dt=0.hT5alf VsDiTRn==j =w4t1/8aT50v0VeVIoRC AVERAGE RECTIFIEDFORWARD CURRENT:Io(A) 2345678 haDDlfDD ==s=.00iCn0..21 ..w8aveD=0.5 T Tj=150C 1 1 D=0.05 1 D=0.05 0 0 0 0 2 4 6 8 0 30 60 90 120 150 0 30 60 90 120 150 AVERAGE RECTIFIED AMBIENT TEMPERATURE:Ta(C) CASE TEMPARATURE:Tc(C) FORWARD CURRENT:Io(A) Derating Curve"(Io-Ta) Derating Curve"(Io-Tc) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.A

Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com R1120A © 2011 ROHM Co., Ltd. All rights reserved.