RDD050N20 Transistors 10V Drive Nch MOSFET RDD050N20 (cid:122)Structure (cid:122)Dimensions (Unit : mm) Silicon N-channel CPT3 MOSFET (cid:122)Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Source) (cid:122)Application Switching (cid:122)Packaging specifications (cid:122)Equivalent Circuit Package Taping Type Code TL ∗2 Basic ordering unit (pieces) 2500 RDD050N20 ∗1 BODY DIODE ∗1 ∗2 GATE PROTECTION DIODE (1)GATE (cid:122)Absolute maximum ratings (Ta=25°C) (2)DRAIN (3)SOURCE Parameter Symbol Limits Unit (1) (2) (3) Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±30 V ∗A protection diode is included between the gate and Continuous ID ±5 A the source terminals to protect the diode against static Drain Current Pulsed IDP ∗1 ±20 A ecilreccutirti cwithy ewnh tehne tfhixee pdr voodlutacgt eiss ina rues eex. cUeseed ethde. protection Source Current Continuous IS 5 A (Body Diode) Pulsed ISP ∗1 20 A Avalanche Current IAS ∗2 5 A Avalanche Energy EAS ∗2 75 mJ Total Power Dissipation (TC=25°C) PD 20 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C ∗1 Pw ≤ 10µs, Duty cycle ≤ 1% ∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C (cid:122)Thermal resistance Parameter Symbol Limits Unit Channel to case Rth(ch-c) 6.25 °C/W Rev.A 1/5

RDD050N20 Transistors (cid:122)Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-Source Leakage IGSS ⎯ ⎯ ±10 µA VGS=±30V, VDS=0V Drain-Source Breakdown Voltage V(BR) DSS 200 ⎯ ⎯ V ID=1mA, VGS=0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 25 µA VDS=200V, VGS=0V Gate Threshold Voltage VGS (th) 2.0 ⎯ 4.0 V VDS=10V, ID=1mA Static Drain-Source On-State ∗ Resistance RDS (on) ⎯ 0.55 0.72 Ω ID=2.5A, VGS=10V Forward Transfer Admittance ⏐Yfs⏐ ∗ 1.1 1.8 ⎯ S VDS=10V, ID=2.5A Input Capacitance Ciss ⎯ 292 ⎯ pF VDS=10V Output Capacitance Coss ⎯ 92 ⎯ pF VGS=0V Reverse Transfer Capacitance Crss ⎯ 28 ⎯ pF f=1MHz Turn-On Delay Time td (on) ∗ ⎯ 10 ⎯ ns ID=2.5A, VDD 100V Rise Time tr ∗ ⎯ 22 ⎯ ns VGS=10V Turn-Off Delay Time td (off) ∗ ⎯ 23 ⎯ ns RL=40Ω Fall Time tf ∗ ⎯ 28 ⎯ ns RG=10Ω Total Gate Charge Qg ∗ ⎯ 9.3 ⎯ nC VDD=100V Gate-Source Charge Qgs ∗ ⎯ 2.8 ⎯ nC VGS=10V Gate-Drain Charge Qgd ∗ ⎯ 3.7 ⎯ nC ID=5A ∗ Pulsed (cid:122)Body diode characteristics (Source-drain) (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD ∗ − − 1.5 V IS= 5.0A, VGS=0V Reverse recovery time trr − 117 − ns IDR= 5.0A, VGS=0V Reverse recovery charge Qrr − 0.37 − µC di/dt= 100A / µs ∗ Pulsed Rev.A 2/5

RDD050N20 Transistors (cid:122)Electrical characteristic curves 100 10 100 9 TPau=ls2e5d°C 8V PVuDSls=e1d0V RAIN CURRENT :I(A)D 01.110 DC OPERATI1NmGs PW=100us DRAIN CURRENT : I(A) D 8765432 109VV 765VVV DRAIN CURRENT : I(A) D 01.110 TTTTaaaa====172 −25525°°5CC°°CC D 1 Tc=25°C VGS=4V 0.01 Single Pulsed 00 2 4 6 8 10 12 14 16 18 20 0.010 2 4 6 8 10 1 10 100 1000 DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) DRAIN-SOURCE VOLTAGE : ID (A) Fig.1 Maximum Safe Operating Area Fig.2 Typical Output Characteristics Fig.3 Typical Transfer Characteristics GATE THRESHOLD VOLTAGE : V (V)GS (th) 6543210.......046842468-50 -25 0 25 50 75 10VI0DD=S11=m2150AV150 STATIC DRAIN-SOURCEΩON-STATE RESISTANCE : R ()DS (on) 01.110 TTTTaaaa==== 271−5522°°55CC°°CC VPGuSls=e1d0V STATIC DRAIN-SOURCEΩON-STATE RESISTANCE : R ()DS (on)1100.1..0.7272..0255515550 5 10 15ID2=.55AA20 TPau2=ls52e5d°C30 CHANNEL TEMPERATURE : Tch (°C) 0.01 0.1 1 10 GATE-SOURCE VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) Fig.4 Gate Threshold Voltage Fig.6 Static Drain-Source vs. Channel Temperature Fig.5 Static Drain-Source On-State Resistance vs. On-State Resistance Gate-Source Voltage vs. Drain Current 2.5 10 100 TIC DRAIN-SOURCEΩSTATE RESISTANCE : R ()DS (on) 10..2515 ID=5A 2.5A VPGuSls=e1d0V FORWARD TRANSFER⏐⏐ADMITTANCE :Yfs(S) 000...521521 TTTTVPaaaaDu====Sl1 27s=−525e21°5°d50CC°°VCC VERSE DRAIN CURRENT : I(A) DR 01.110 TTTTaaaaVP====Gu 271−Sl552s=2°°5e50CC°d°VCC STAON- 0 0.05 RE0.01 -50 -25 0 25 50 75 100 125 150 0.05 0.1 0.2 0.5 1 2 5 10 20 0 0.10.20.30.40.50.60.70.80.9 1 1.11.21.31.41.5 CHANNEL TEMPERATURE : Tch (°C) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.7 Static Drain-Source Fig.8 Forward Transfer Admittance Fig.9 Reverse Drain Current vs. On-State Resistance vs. vs. Drain Current Source-Drain Voltage Channel Temperature Rev.A 3/5

RDD050N20 Transistors 1000 200 20 1000 CAPACITANCE : C(pF) 101100 fVTP=aGu1=SlMs=2e0H5dV°zC CCCirossssss DRAIN-SOURCE VOLTAGE : I(V) DS111118642086420000000000 VDS VVVDDDDDD===411VVV006DDDV00DDDVV===411006V00VV VTIPDGau=S=l5s2Ae5d°C010GATE-SOURCE VOLTAGE : V(V) GS REVERSE RECOVERY TIME : t(ns) rr 1010 TdVPiaGu /=Sl sd=2et05=dV°1C00A / µs 0.1 1 10 100 1000 0 2 4 6 8 10 12 14 0.1 1 10 DRAIN SOURCE VOLTAGE : VDS (V) TOTAL GATE CHARGE : Qg (nC) REVERSE DRAIN CURRENT : IDR (A) Fig.10 Typical Capacitance vs. Fig.11 Dynamic Input Characteristics Fig.12 Reverse Recovery Time Drain-Source Voltage vs. Reverse Drain Current 1000 Ta=25°C VDD=100V VGS=10V ns) tf RPuQl=s1e0dΩ E : t ( 100 M G TI td (off) N HI C tr WIT 10 td (on) S 1 0.1 1 10 DRAIN CURRENT : ID (A) Fig.13 Switching Characteristcs Rev.A 4/5

RDD050N20 Transistors (cid:122)Switching characteristics measurement circuit Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate charge waveform Fig.3-1 Avalanche measurement circuit Fig.3-2 Avalanche waveform Rev.A 5/5

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System THE AMERICAS / EUROPE / ASIA / JAPAN www.rohm.com Contact us : webmaster@rohm.co.jp Copyright © 2008 ROHM CO.,LTD. 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0