Data Sheet 10V Drive Nch MOSFET RCD080N25 Structure Dimensions (Unit : mm) r Silicon N-channel MOSFET CPT3 6.5 o (<SSCO-T6-432)8> 5.1 2.3 0.5 5f Features 1. 12)) LHoigwh -osnp-ereesdi sstwanitcceh.ing. d0.9 5.5 1.5 9.5 0.75 5 3) Wide range of SOA. 2. 4) Drive circuits can be simple. e0.9(1)2.3(2) (3)02.6.35 0.8Min.0.5 1.0 5) Parallel use is easy. d s n Application Switching e n g m Packaging specifications Inner circuit i Package Taping s Type Code TL m Basic ordering unit (pieces) 2500 ∗1 e RCD080N25  o D (1) Gate Absolute maximum ratings (Ta = c25C) (2) Drain (1) (2) (3) (3) Source 1 BODY DIODE Parameter Symbol Limits Unit w Drain-source voltage e V 250 V DSS Gate-source voltage V 30 V GSS R Drain current Continuous IDe*3 8 A Pulsed I *1 32 A DP Source current Continuous N IS *3 8 A (Body Diode) t Pulsed I *1 32 A SP Avalancheo current IAS *2 4 A Avalanche energy EAS *2 4.67 mJ PowNer dissipation P *4 85 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L 500H, V =50V, R =25, T =25C DD G ch *3 Limited only by maximum channel temperature allowed. *4 T =25C C Thermal resistance Parameter Symbol Limits Unit Channel to Case Rth (j-c)* 1.46 C / W * T =25°C C * Limited only by maximum channel temperature allowed. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/5 2016.02 - Rev.B

RCD080N25 　 Data Sheet Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I - - 100 nA V =30V, V =0V GSS GS DS Drain-source breakdown voltage V 250 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I - - 10 A V =250V, V =0V DSS DS GS Gate threshold voltage V 3 - 5 V V =10V, I =1mA GS (th) DS D Static drain-source on-state * R - 225 300 m I =4A, V =10V r resistance DS (on) D GS Forward transfer admittance l Y l* 2.7 - - S V =10V, I =4A o fs DS D Input capacitance C - 1440 - pF V =25V iss DS f Output capacitance C - 80 - pF V =0V oss GS Reverse transfer capacitance C - 40 - pF f=1MHz rss d Turn-on delay time td(on)* - 30 - ns VDD 125V, ID=4A Rise time tr * - 40 - ns VGS=10V e Turn-off delay time td(off)* - 40 - ns RL=31.25 Fall time tf * - 15 - ns RG=d10 Total gate charge Qg * - 25 - nC VDD 125V, ID=8A Gate-source charge Qgs * - 10 - nCnVGS=10V s Gate-drain charge Qgd * - 10 - nC n e *Pulsed g m Body diode characteristics (Source-Drain) i Parameter Symbol Min. Typ. Max. Unit s Conditions m Forward Voltage V * - - 1.5 V I =8A, V =0V SD s GS e *Pulsed o D c w e R e N t o N www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/5 2016.02 - Rev.B

RCD080N25 　 Data Sheet Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 2 2 1.8 VVGSG=S=108..00VV V =7.0V Tpua=ls2e5d° C 1.8 VVGGSS==180.0.0VV VGS=6.5V GS 1.6 1.6 Ta=25°C pulsed 1.4 VGS=6.5V 1.4 VGS=7.0V r Drain Current : I [A] D 001...1682 VGS=6.0V Drain Current : I [A] D 001...1682 foVGS=6.0V d 00..24 VGS=5.0V VGS=5.5V 00..24 e VGS=5.0V VGS=5.5V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 d Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] s n Fig.3 Typical Transfer Characteristics Fig.4 Gate Threshold Voltage vs. Channel Temperature n 100 e 6 VDS=10V VDS=10V pulsed I=1mA m pDulsed g 10 Drain Currnt : I [A] D 0.11 TTTTaa==aa==1-27225555°°°°CCCC o m eshold Voltage : V [V] GS(th)e45 si D hr T ate 3 0.01 c G w e 0.001 2 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 GRate-Source Voltage : VGS [V] Channel Temperature : T [℃] e ch Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature N 10t 0.7 VpuGlSs=e1d0 V Ω] VpuGlSs=e1d0 V N Static Drain-Source On-State Resistance R [Ω] DS(on)o0.11 TTTTaaaa====172-225555°°CC°°CC Drain-Source On-State Resistance : R [DS(on) 000000......123456 ID=8A ID=4A c ati St 0.01 0 0.01 0.1 1 10 100 -50 -25 0 25 50 75 100 125 150 Drain Current : ID [A] Channel Temperature : Tch [℃] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 3/5 2016.02 - Rev.B

RCD080N25 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage 10 100 VpuDlSs=e1d0 V VpuGlSs=e0dV S] Y [fs 1 10 r ard Transfer Admittance: 0.1 TTTTaaaa====172-225555°°CC°°CC Source Current : Is [A] 1 TTTTfaaaa====172-225555°°CC°°CC o orw 0.01 0.1 d F e 0.001 0.01 0.001 0.01 0.1 1 10 0.0 d 0.5 1.0 1.5 2.0 Drain Current : ID [A] Source-Drain Voltage : VSD [V] s n Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.10 Switching Characteristics n 1 e10000 V ≒125V T=25°C DD e pualsed m gtf VRGGS==1100ΩV ain-Source On-State ResistancR [Ω] DS(on) 000...468 ID=4.0A ID=8.0A o m D Switching Time : t [ns] e1100000 sitd(on) td(off) TPau=ls2e5d°C atic Dr 0.2 c 10 tr St w e 0 1 0 2 4 6 8 10 12 14 16 18 20 0.01 0.1 1 10 GRate-Source Voltage : VGS [V] Drain Current : ID [A] e Fig.11 Dynamic Input Characteristics Fig.12 Typical Capacitance vs. Drain-Source Voltage N 15t 10000 T=25°C T=25°C a a o V =125V f=1MHz DD I=8A V =0V D GS Pulsed V] 1000 N V [GS 10 F] Ciss Voltage : nce : C [p 100 e-Source 5 Capacita Coss at G 10 C rss 0 1 0 5 10 15 20 25 30 35 40 0.01 0.1 1 10 100 1000 Total Gate Charge : Qg [nC] Drain-Source Voltage : VDS [V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 4/5 2016.02 - Rev.B

RCD080N25 　 Data Sheet Measurement circuits Pulse width VGS ID VDS 50% 90% 50% RL VGS 10% VDS D.U.T. 10% 10% RG VDD 90% 90% r td(on) tr td(off) tf o ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms f d VG VGS ID VDS Qg e RL VGS IG(Const.) D.U.T. Qgs Qgd d VDD s n Charge n e Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform g m i s VGS IAS m VDS V(BR)DSS e D.U.T. L IAS RG o VDD VDD D c EAS = 12 L IAS2 V(BVR)(DBSRS)D -S SVDD w e Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform R e N t o N www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 5/5 2016.02 - Rev.B

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