Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

RB520S30 200 mA low V MEGA Schottky barrier rectifier F Rev. 01 — 6 October 2009 Product data sheet 1. Product profile 1.1 General description PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaSOD523(SC-79)ultrasmall and flat lead Surface-Mounted Device(SMD) plastic package. 1.2 Features n Average forward current: I £ 0.2A F(AV) n Reverse voltage: V £ 30V R n Low reverse current: I £ 1m A R n AEC-Q101 qualified n Ultra small and flat lead SMD plastic package 1.3 Applications n Low current rectification n High efficiency DC-to-DC conversion n Switch Mode Power Supply(SMPS) n Reverse polarity protection n Low power consumption applications 1.4 Quick reference data Table 1. Quick reference data T=25(cid:176) C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit I average forward current square wave; F(AV) d =0.5; f=20kHz T £ 105(cid:176) C [1] - - 0.2 A amb T £ 135(cid:176) C - - 0.2 A sp I reverse current V =10V - - 1 m A R R V reverse voltage - - 30 V R V forward voltage I =0.2A [2] - 520 600 mV F F [1] Device mounted on an FR4Printed-Circuit Board(PCB), single-sided copper, mounting pad for cathode1cm2. [2] Pulse test: t £ 300m s;d£ 0.02. p

RB520S30 NXP Semiconductors 200 mA low V MEGA Schottky barrier rectifier F 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode [1] 1 2 2 anode 1 2 sym001 [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version RB520S30 SC-79 plastic surface-mounted package; 2leads SOD523 4. Marking Table 4. Marking codes Type number Marking code RB520S30 ZA 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T =25(cid:176) C - 30 V R j I average forward current square wave; F(AV) d =0.5; f=20kHz T £ 105(cid:176) C [1] - 0.2 A amb T £ 135(cid:176) C - 0.2 A sp I non-repetitive peak t =8.3ms [2] - 1 A FSM p forward current halfsine wave; JEDEC method P total power dissipation T £ 25(cid:176) C [3][4] - 275 mW tot amb [3][1] - 420 mW [3][5] - 500 mW RB520S30_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 2 of 12

RB520S30 NXP Semiconductors 200 mA low V MEGA Schottky barrier rectifier F Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit T junction temperature - 150 (cid:176) C j T ambient temperature - 55 +150 (cid:176) C amb T storage temperature - 65 +150 (cid:176) C stg [1] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2. [2] T =25(cid:176) C prior to surge. j [3] Reflow soldering is the only recommended soldering method. [4] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [5] Device mounted on a ceramicPCB, Al O , standard footprint. 2 3 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air [1][2] th(j-a) junction to ambient [3] - - 455 K/W [4] - - 300 K/W [5] - - 250 K/W R thermal resistance from [6] - - 90 K/W th(j-sp) junction to solder point [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P are a significant part of the total power losses. R [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2. [5] Device mounted on a ceramicPCB, Al O , standard footprint. 2 3 [6] Soldering point of cathode tab. RB520S30_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 3 of 12

RB520S30 NXP Semiconductors 200 mA low V MEGA Schottky barrier rectifier F 103 006aab700 duty cycle = Zth(j-a) 1 (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 10 0.02 0.01 0 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 103 tp (s) FR4PCB, standard footprint Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 006aab701 duty cycle = Zth(j-a) (K/W) 1 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 10 0.02 0.01 0 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 103 tp (s) FR4PCB, mounting pad for cathode 1cm2 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values RB520S30_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 4 of 12

RB520S30 NXP Semiconductors 200 mA low V MEGA Schottky barrier rectifier F 7. Characteristics Table 7. Characteristics T=25(cid:176) C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit V forward voltage [1] F I =0.1mA - 190 220 mV F I =1mA - 250 290 mV F I =10mA - 320 360 mV F I =100mA - 440 500 mV F I =200mA - 520 600 mV F I reverse current V =10V - - 1 m A R R C diode capacitance f=1MHz; V =1V - - 20 pF d R [1] Pulse test: t £ 300m s;d£ 0.02. p 1 006aab702 10- 3 006aab703 IR (1) IF (A) (A) 10- 4 (1) 10- 1 (2) (2) 10- 5 10- 2 (3) (4) (5) 10- 6 (3) (4) 10- 7 10- 3 10- 8 10- 4 10- 9 0.0 0.2 0.4 0.6 0.8 0 10 20 30 VF (V) VR (V) (1) T =150(cid:176) C (1) T =125(cid:176) C j j (2) T =125(cid:176) C (2) T =85(cid:176) C j j (3) T =85(cid:176) C (3) T =25(cid:176) C j j (4) T =25(cid:176) C (4) T =- 40(cid:176) C j j (5) T =- 40(cid:176) C j Fig 3. Forward current as a function of forward Fig 4. Reverse current as a function of reverse voltage; typical values voltage; typical values RB520S30_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 5 of 12

RB520S30 NXP Semiconductors 200 mA low V MEGA Schottky barrier rectifier F 006aab704 006aab705 35 0.20 (CpFd) PF(AV) 30 (W) (4) 0.16 25 (3) 0.12 20 (2) (1) 15 0.08 10 0.04 5 0 0.0 0 10 20 30 0.0 0.1 0.2 0.3 VR (V) IF(AV) (A) f=1MHz; T =25(cid:176) C T =150(cid:176) C amb j (1) d =0.1 (2) d =0.2 (3) d =0.5 (4) d =1 Fig 5. Diode capacitance as a function of reverse Fig 6. Average forward power dissipation as a voltage; typical values function of average forward current; typical values 006aab706 006aab707 0.01 0.3 PR(AV) (1) (W) IF(AV) 0.008 (A) (2) 0.2 (1) 0.006 (2) (3) (3) 0.004 (4) 0.1 (4) 0.002 0.0 0.0 0 10 20 30 0 25 50 75 100 125 150 175 VR (V) Tamb ((cid:176)C) T =125(cid:176) C FR4PCB, standard footprint j (1) d =1 T =150(cid:176) C j (2) d =0.9 (1) d =1; DC (3) d =0.8 (2) d =0.5; f=20kHz (4) d =0.5 (3) d =0.2; f=20kHz (4) d =0.1; f=20kHz Fig 7. Average reverse power dissipation as a Fig 8. Average forward current as a function of function of reverse voltage; typical values ambient temperature; typical values RB520S30_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 6 of 12

RB520S30 NXP Semiconductors 200 mA low V MEGA Schottky barrier rectifier F 006aab708 006aab709 0.3 0.3 (1) (1) IF(AV) IF(AV) (A) (A) (2) (2) 0.2 0.2 (3) (3) 0.1 (4) 0.1 (4) 0.0 0.0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 Tamb ((cid:176)C) Tsp ((cid:176)C) FR4PCB, mounting pad for cathode 1cm2 T =150(cid:176) C j T =150(cid:176) C (1) d =1; DC j (1) d =1; DC (2) d =0.5; f=20kHz (2) d =0.5; f=20kHz (3) d =0.2; f=20kHz (3) d =0.2; f=20kHz (4) d =0.1; f=20kHz (4) d =0.1; f=20kHz Fig 9. Average forward current as a function of Fig 10. Average forward current as a function of ambient temperature; typical values solder point temperature; typical values 8. Test information tr tp t D.U.T. 10 % RS = 50 W IF SAMPLING + IF trr t OSCILLOSCOPE V = VR + IF · RS Ri = 50 W 90 % (1) VR mga881 input signal output signal (1) I =1mA R Input signal: reverse pulse rise time t =0.6ns; reverse voltage pulse duration t =100ns; duty cycled =0.05 r p Oscilloscope: rise time t =0.35ns r Fig 11. Reverse recovery time test circuit and waveforms RB520S30_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 7 of 12

RB520S30 NXP Semiconductors 200 mA low V MEGA Schottky barrier rectifier F P duty cycle d = t1 t2 t2 t1 t 006aaa812 Fig 12. Duty cycle definition The current ratings for the typical waveforms as shown inFigure8,9 and10 are calculated according to the equations: I = I · d with I defined as peakcurrent, F(AV) M M IRMS = IF(AV) at DC, and IRMS = IM· d with IRMS defined as RMScurrent. 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standardQ101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 0.85 0.65 0.75 0.58 1 1.65 1.25 1.55 1.15 2 0.34 0.17 0.26 0.11 Dimensions in mm 02-12-13 Fig 13. Package outline SOD523(SC-79) RB520S30_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 8 of 12

RB520S30 NXP Semiconductors 200 mA low V MEGA Schottky barrier rectifier F 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 8000 10000 RB520S30 SOD523 2mm pitch, 8mm tape and reel - -315 - 4mm pitch, 8mm tape and reel -115 - -135 [1] For further information and the availability of packing methods, seeSection14. 11. Soldering 2.15 1.1 solder lands solder resist 0.5 0.6 1.2 (2· ) (2· ) solder paste occupied area 0.7 Dimensions in mm (2· ) 0.8 (2· ) sod523_fr Reflow soldering is the only recommended soldering method. Fig 14. Reflow soldering footprint SOD523(SC-79) RB520S30_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 9 of 12

RB520S30 NXP Semiconductors 200 mA low V MEGA Schottky barrier rectifier F 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes RB520S30_1 20091006 Product data sheet - - RB520S30_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 10 of 12

RB520S30 NXP Semiconductors 200 mA low V MEGA Schottky barrier rectifier F 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. 13.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications —Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the informationincludedhereinandshallhavenoliabilityfortheconsequencesof specified use without further testing or modification. use of such information. Limiting values —Stress above one or more limiting values (as defined in Short data sheet —A short data sheet is an extract from a full data sheet theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand the device at these or any other conditions above those given in the full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability. office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale —NXP Semiconductors products are sold full data sheet shall prevail. subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, 13.3 Disclaimers intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such General —Information in this document is believed to be accurate and terms and conditions, the latter will prevail. reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor No offer to sell or license —Nothing in this document may be interpreted warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch or construed as an offer to sell products that is open for acceptance or the information and shall have no liability for the consequences of use of such grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents information. or other industrial or intellectual property rights. Right to make changes —NXPSemiconductorsreservestherighttomake Export control —This document as well as the item(s) described herein changes to information published in this document, including without may be subject to export control regulations. Export might require a prior limitation specifications and product descriptions, at any time and without authorization from national authorities. notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. Quick reference data —The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this Suitability for use —NXP Semiconductors products are not designed, document, and as such is not complete, exhaustive or legally binding. authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected 13.4 Trademarks to result in personal injury, death or severe property or environmental Notice:Allreferencedbrands,productnames,servicenamesandtrademarks are the property of their respective owners. 14. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com RB520S30_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 11 of 12

RB520S30 NXP Semiconductors 200 mA low V MEGA Schottky barrier rectifier F 15. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 14 Contact information. . . . . . . . . . . . . . . . . . . . . 11 15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 6 October 2009 Document identifier: RB520S30_1