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QSE159产品简介:
ICGOO电子元器件商城为您提供QSE159由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 QSE159价格参考。Fairchild SemiconductorQSE159封装/规格:光学传感器 - 光电检测器 - 逻辑输出, Optical Sensor 880nm Photo Detector, Logic Output Open Collector Inverter 3-SIP, Side View。您可以下载QSE159参考资料、Datasheet数据手册功能说明书,资料中有QSE159 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | IC SENSOR INV OPEN-COLL SIDELOOK光IC传感器 LOGIC DETECTOR |
产品分类 | |
品牌 | Fairchild Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 光IC传感器,Fairchild Semiconductor QSE159* |
数据手册 | |
产品型号 | QSE159 |
上升时间 | 100 ns |
下降时间 | 100 ns |
产品 | Photo IC |
产品目录绘图 | |
产品目录页面 | |
产品种类 | 光IC传感器 |
传播延迟时间 | 6 us |
低电平输出电压 | 0.4 V |
其它名称 | QSE159QT |
单位重量 | 187.200 mg |
商标 | Fairchild Semiconductor |
安装风格 | Through Hole |
封装 | Bulk |
封装/外壳 | 侧视图 |
工作电源电压 | 4 V to 16 V |
工厂包装数量 | 500 |
最大功率耗散 | 100 mW |
最大工作温度 | + 85 C |
最小工作温度 | - 40 C |
标准包装 | 500 |
波长 | 880 nm |
电源电流 | 5 mA |
类型 | 光电探测器 - 逻辑输出 |
系列 | QSE159 |
输出类型 | Open Collector, Inverter |
通道数量 | 1 Channel |
高电平输出电流 | 100 uA |
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Q S E 1 5 February 2016 8 , Q S QSE158, QSE159 tm E 1 ® 5 Plastic Silicon OPTOLOGIC Photosensor 9 - P l a Features Description s t i c ■ Bipolar silicon IC The QSE15X family are OPTOLOGIC® ICs which S ■ Package type: Sidelooker feature a Schmitt trigger at output which provides hyster- i l ■ Medium wide reception angle, 50° esis for noise immunity and pulse shaping. The basic ic building block of this IC consists of a photodiode, a linear o ■ Package material and color: black epoxy n amplifier, voltage regulator, Schmitt trigger and four out- ■ Matched emitter: QEE113/QEE123 put options. The TTL/LSTTL compatible output can drive OP ■ Daylight filter up to ten TTL loads over supply currents from 4.5 to 16.0 T O ■ High sensitivity Volts. The devices are marked with a color stripe for L ■ Direct TTL/LSTTL interface easy identification. O G I C ® P Package Dimensions h o ø1.65 to 4.39 2.49 s e 4.49 2.59 n 2.17 s 2.27 o r 5.03 3.76 5.13 3.86 2.54 3.56 ø2.41 12.7 MIN Part Number Definitions Color Code QSE158 Open-collector, buffer output Green QSE159 Open-collector, inverter output Blue 0.63 0.32 Input/Output Table 0.89 NOM 1.9 NOM 2X Part Number Light Output QSE158 On HIGH GND Vout Vcc Off LOW QSE159 On LOW 0.51 SQ. NOM 2.49 Off HIGH 2.59 Note: 1.Dimensions for all drawings are in millimeters. ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com QSE158, QSE159 Rev. 1.5
Q S Block Diagrams E 1 5 8 VCC VCC , Q VOLTAGE VOLTAGE S E REGULATOR REGULATOR 1 VOUT VOUT 5 9 LA LA - P l a s t i GND GND c S QSE158 QSE159 i l Open-Collector Output Buffer Open-Collector Output Inverter ic o n O P T Absolute Maximum Ratings (T = 25°C unless otherwise specified) O A Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be L O operable above the recommended operating conditions and stressing the parts to these levels is not recommended. G In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. I C The absolute maximum ratings are stress ratings only. ® P Symbol Parameter Rating Unit h o T Operating Temperature -40 to +85 °C OPR t o T Storage Temperature -40 to +100 °C s STG e T Soldering Temperature (Iron)(2,3,4) 240 for 5 sec °C n SOL-I s T Soldering Temperature (Flow)(2,3) 260 for 10 sec °C o SOL-F r I Output Current 50 mA O V Supply Voltage 4.0 to 16 V CC V Output Voltage 35 V O P Power Dissipation(1) 100 mW D Notes: 1. Derate power dissipation linearly 2.50mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron tip 1/16" (1.6mm) minimum from housing. ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com QSE158, QSE159 Rev. 1.5 2
Q S Electrical Characteristics (T = -40°C to +85°C, V = 4.5V to 16V) E A CC 1 5 Symbol Parameter Test Conditions Min. Typ. Max. Units 8 Ee(+) Positive Going Threshold T = 25°C 0.025 0.250 mW/cm2 , Q A Irradiance(5) S E Ee(+)/Ee(-) Hysteresis Ratio 1.10 2.00 1 5 I Supply Current(5) Ee = 0 or 0.3mW/cm2 5.0 mA 9 CC - Peak to Peak Ripple which f = DC to 50MHz 2.00 V P l will Cause False Triggering a s QSE158 (Buffer Open Collector) ti c I High Level Output Current(5) Ee = 0.3mW/cm2, V = 30V 100 µA S OH OH i l VOL Low Level Output Voltage Ee = 0, IOL = 16mA 0.40 V ic o QSE159 (Inverter Open Collector) n I High Level Output Current Ee = 0, V = 30V 100 µA O OH OH P V Low Level Output Voltage(5) Ee = 0.3mW/cm2, I = 16mA 0.40 V T OL OL O QSE158, QSE159 L O tR, tF Output Rise, Fall Times Ee = 0 or 0.3mW/cm2, 100 nS G f = 10kHz, DC = 50%, I t , t Propagation Delay 6.0 µS C PHL PLH RL = 360Ω(5) ® P Note: h 5. λ = 880nm (AlGaAs). o t o s e n s o r ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com QSE158, QSE159 Rev. 1.5 3
Q S Typical Performance Curves (Sensor Coupled to QEE113 Emitter) E 1 5 Fig. 1 Output Voltage vs. Input Current (Inverters) Fig. 2 Output Voltage vs. Input Current (Buffers) 8 6 6 , Q )V( egatloV tu 345 VOH VRTd ACL= C ==4 =m22 575m°0 VCΩ )V( egatloV tu 345 VRTd ACL= C ==4 =m22 575m°0 VCΩ VOH -SE159 Pla ptu IF (OFF) IF (ON) ptu IF (OFF) IF (ON) s O -O 2 O -O 2 tic V V S 1 1 i l VOL VOL ic 0 0 o 0 1 2 3 4 5 0 1 2 3 4 5 n IF - Input Current (mA) IF - Input Current (mA) O P T O L O G Fig. 3 Threshold Current vs. Distance Fig. 4 Normalized Threshold Current vs. Supply Voltage I C 10 1.6 8 Normalized to: ® tnerru 64 tnerruC 11..24 TVTuACr Cn= =O2 5N5° VCThreshold Pho C dlohserhT dezilamroN - )NO 10000.....208642 NVRTdPP ACuWoL= lrC s== m4= e =m22a d1 57l5 mi01°0z VC00eΩμ0d sH toz: dlohserhT dezilamroN - IF 00001.....24680 IIFF ((OOFNF)) tosensor I(F 0.1 0.0 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 16 d - Distance (mm) VCC - Supply Voltage (V) ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com QSE158, QSE159 Rev. 1.5 4
Q S Typical Performance Curves (Sensor Coupled to QEE113 Emitter) (Continued) E 1 5 8 Fig. 5 Normalized Threshold Current , vs. Ambient Temperature Fig. 6 Low Output Voltage vs. Output Current Q 1.8 1 S tnerruC dlohserh 1111....0246 IF (ON) NVTACo rC=m =2a 5l5i°z VCed to: IFI (FO (FOFN)) )V( woL ,ega VTIFAC = C= 1 =20 55 m° VCA -E159 Plas T dezilamroN - F 000...468 IF (OFF) tloV tuptuO -VLO 0.1 tic Silico I 0.2 n O 0.0 0.01 P -40 -20 0 20 40 60 80 100 1 1 0 T TA - Ambient Temperature (˚C) IO - Output Current (mA) O L O G I C Fig. 7 Response Time vs. Forward Current ® 5 P VCC = 5V h RL = 270Ω o 4 TA = 25°C to )s IF Pulsed s μ( em TD u=t y1 0C ymcsle = 50% en iT ya 3 TPLH so le r D es 2 n op TPHL s e R 1 0 0 5 10 15 20 IF - Forward Current (mA) ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com QSE158, QSE159 Rev. 1.5 5
Q S E Fig. 8 Switching Speed Test Circuit 1 5 8 C2 , Q 5V S E R1 1 R2 .1 uf 5 9 bypass PGuelnseerator C1 - P VO = 5V GND la f = 10 KHz s d.c. = 50% ti c S RR 12 == 316800ΩΩ CC 12 == 1250 ppff sCt 1r aayn dw Cir2 e i ncacpluadceit apnrocbee and ilic o n O P T O Fig. 9 Switching Times Definition for Buffers Fig. 10 Switching Times Definition for Inverters L O G I C 50% 50% ® P h o t 0 mA 0 mA o s e n s t t t t o PLH PHL PHL PLH r V OH VOH 10% 90% 90% 10% Output Output VO 50% VO 90% 10% V 10% 90% V OL OL t t t t r f f r ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com QSE158, QSE159 Rev. 1.5 6
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