Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

Q S E 1 May 2015 1 3 / Q S E 1 QSE113 / QSE114 1 4 — Plastic Silicon Infrared Phototransistor P l a s t i Features Description c S • NPN Silicon Phototransistor The QSE113/114 is a silicon phototransistor encapsu- ili c • Package Type: Sidelooker lated in a wide angle, infrared transparent, black plastic o n • Medium Wide Reception Angle, 50° sidelooker package. I • Package Material and Color: Black Epoxy n f r • Matched Emitter: QEE113 a r • Daylight Filter e d • High Sensitivity P • Blue dot marking on the top side h o t o Package Dimensions(1, 2) t r a n s i s 0.175 (4.44) t o 0.087 (2.22) r Ø 0.065 (1.65) 0.050 (1.27) 0.200 (5.08) Ø 0.095 (2.41) 0.500 (12.70) MIN EMITTER COLLECTOR Schematic 0.020 (0.51) SQ. Collector (2X) 0.100 (2.54) 0.030 (0.76) 0.100 (2.54) NOM Emitter Notes: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com QSE113 / QSE114 Rev. 2.1 1

Q S Absolute Maximum Ratings E 1 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- 1 3 ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- / tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The Q absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. S A E 1 Symbol Parameter Value Unit 1 4 TOPR Operating Temperature -40 to +100 °C — TSTG Storage Temperature -40 to +100 °C P l T Soldering Temperature (Iron)(4, 5, 6) 240 for 5 sec °C a SOL-I s T Soldering Temperature (Flow)(4, 5) 260 for 10 sec °C ti SOL-F c V Collector Emitter Voltage 30 V S CE i l VEC Emitter Collector Voltage 5 V ic o P Power Dissipation(3) 100 mW n D I n Notes: f r 3. Derate power dissipation linearly 1.33 mW/°C above 25°C. a r e 4. RMA flux is recommended. d 5. Methanol or isopropyl alcohols are recommended as cleaning agents. P h 6. Soldering iron 1/16" (1.6mm) minimum from housing. o t o t r a Electrical / Optical Characteristics n s i Values are at T = 25°C unless otherwise noted. s A t o Symbol Parameter Conditions Min. Typ. Max. Unit r λ Peak Sensitivity 880 nm PS Θ Reception Angle ±25 ° l Collector Emitter Dark Current V = 10 V, E = 0 100 nA CEO CE e BV Collector-Emitter Breakdown I = 1 mA 30 V CEO C BV Emitter-Collector Breakdown I = 100 μA 5 V ECO E On-State Collector Current(7) 0.25 1.50 QSE113 I E = 0.5 mW/cm2, V = 5 V mA C(ON) On-State Collector Current(7) e CE 1.00 QSE114 V Saturation Voltage(7) E = 0.5 mW/cm2, I = 0.1 mA 0.4 V CE(SAT) e C tr Rise Time IC = 1 mA, VCC = 5 V, 8 μs tf Fall Time RL = 100 Ω 8 μs Note: 7. λ = 880 nm (AlGaAs) © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com QSE113 / QSE114 Rev. 2.1 2

Q S Typical Performance Characteristics E 1 1 3 / Q 101 S VCE= 5V E GaAs Light Source 100 90 80 1 110 70 1 )Am( tn 130 120 60 50 4 — e rru 140 40 P C thgiL 100 150 30 las -)N 160 20 tic O(C S I 170 10 i l i c 10-01.1 1 1801.0 0.8 0.6 0.4 0.2 00..00 0.2 0.4 0.6 0.8 1.00 on Ee - Radiant Intensity (mW/cm2) In f Figure 1. Light Current vs. Radiant Intensity Figure 2. Angular Response Curve ra r e d P 101 101 Ie = 1mW/cm2 ho t o )An( tnerruC kraD 1100-01 tnerruC thgiL dezila 100 IIIeee === 000...152mmmWWW///cccmmm222 transistor - m O ro 10-1 IEC 10-2 N -I L NVCoErm=a 5liVzed to: Ie = 0.5mW/cm2 TA= 25°C 10-3 10-2 0 5 10 15 20 25 30 0.1 1 10 VCE - Collector-Emitter Voltage (V) VCE - Collector-Emitter Voltage (V) Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage 104 Normalized to: tne 103 VTACE= =25 2°5CV VCE= 25V rru C kraD 102 VCE= 10V d e zila m 101 ro N - O EC 100 I 10-1 25 50 75 100 TA - Ambient Temperature (°C) Figure 5. Dark Current vs. Ambient Temperature © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com QSE113 / QSE114 Rev. 2.1 3

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AccuPower(cid:165) F-PFS(cid:165) OPTOPLANAR® AttitudeEngine™ FRFET® ®* Awinda® Global Power ResourceSM ® TinyBoost® AX-CAP®* GreenBridge(cid:165) Power Supply WebDesigner(cid:165) TinyBuck® BitSiC(cid:165) Green FPS(cid:165) PowerTrench® TinyCalc(cid:165) Build it Now(cid:165) Green FPS(cid:165) e-Series(cid:165) PowerXS™ TinyLogic® CorePLUS(cid:165) Gmax(cid:165) Programmable Active Droop(cid:165) TINYOPTO(cid:165) CorePOWER(cid:165) GTO(cid:165) QFET® TinyPower(cid:165) CROSSVOLT(cid:165) IntelliMAX(cid:165) QS(cid:165) TinyPWM(cid:165) CTL(cid:165) ISOPLANAR(cid:165) Quiet Series(cid:165) TinyWire(cid:165) Current Transfer Logic(cid:165) Making Small Speakers Sound Louder RapidConfigure(cid:165) TranSiC(cid:165) DEUXPEED® and Better™ (cid:165) TriFault Detect(cid:165) Dual Cool™ MegaBuck(cid:165) TRUECURRENT®* EcoSPARK® MICROCOUPLER(cid:165) Saving our world, 1mW/W/kW at a time™ μSerDes(cid:165) EfficientMax(cid:165) MicroFET(cid:165) SignalWise(cid:165) ESBC(cid:165) MicroPak(cid:165) SmartMax(cid:165) ® MicroPak2(cid:165) SMART START(cid:165) UHC® Solutions for Your Success(cid:165) Fairchild® MillerDrive(cid:165) SPM® Ultra FRFET(cid:165) FFFFFFAEAAaasiCTCSrtcBTvTThC®e® iQlnodcur eShie(cid:165)(cid:165)et mSiecroiensd(cid:165)uctor® MMMMMmTToVWotixNt®iiS®oo®nnaGMveraird®x®(cid:165) SSSSSSuTuuuupppppEeereeAerrrrSLFMSSOTEOOOHTTTTS(cid:165)(cid:165)®(cid:165)(cid:165)®-3--68 XUVVVXsCioSnseli™XutFnaa(cid:165)Esg l™MTe(cid:165)Palxu(cid:165)s(cid:165) FPS(cid:165) OOpPtToOHLiTO(cid:165)GIC® SyncFET(cid:165) (cid:3037)(cid:10106)™ Sync-Lock™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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