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Q S D 1 November 2016 2 3 , Q S D QSD123, QSD124 1 2 Plastic Silicon Infrared Phototransistor 4 — P Features Description la s ■ NPN Silicon Phototransistor The QSD123/124 is a phototransistor encapsulatedin ti c ■ Package Type: T-1 3/4 an infrared transparent, black T-1 3/4 package. S ■ Matched Emitter: QED12X/QED22X/QED23X il i c ■ Narrow Reception Angle: 24°C o n ■ Daylight Filter I n ■ Package Material and Color: Black Epoxy f r ■ High Sensitivity a r e d P Package Dimensions h o t o 0.195 (4.95) t r a n s i s t o r REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) 0.800 (20.3) NOM MIN EMITTER COLLECTOR Schematic COLLECTOR 0.500 (1.25) 0.100 (2.54) NOM 0.240 (6.10) 0.215 (5.45) EMITTER 0.020 (0.51) SQ. (2X) Notes: 1.Dimensions for all drawings are in inches (mm). 2.Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. ©2012 Fairchild Semiconductor Corporation www.fairchildsemi.com QSD123, QSD124 Rev. 1.3

Q S Absolute Maximum Ratings (T = 25°C unless otherwise specified) D A 1 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be 2 operable above the recommended operating conditions and stressing the parts to these levels is not recommended. 3 , In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. Q The absolute maximum ratings are stress ratings only. S D 1 Symbol Parameter Rating Unit 2 4 TOPR Operating Temperature -40 to +100 °C — TSTG Storage Temperature -40 to +100 °C P TSOL-I Soldering Temperature (Iron)(2,3,4) 240 for 5 sec °C la s T Soldering Temperature (Flow)(2,3) 260 for 10 sec °C t SOL-F ic VCE Collector-Emitter Voltage 30 V S i VEC Emitter-Collector Voltage 5 V lic P Power Dissipation(1) 100 mW o D n I Notes: n f 1.Derate power dissipation linearly 1.33mW/°C above 25°C. r a 2.RMA flux is recommended. re 3.Methanol or isopropyl alcohols are recommended as cleaning agents. d P 4.Soldering iron 1/16” (1.6mm) minimum from housing. h 5.λ = 880nm, AlGaAs. o t o t r a n Electrical/Optical Characteristics (TA = 25°C) sis t Symbol Parameter Test Conditions Min. Typ. Max. Units o r λ Peak Sensitivity Wavelength 880 nm PS Θ Reception Angle ±12 ° I Collector-Emitter Dark Current V = 10V, Ee = 0 100 nA CEO CE BV Collector-Emitter Breakdown I = 1mA 30 V CEO C BV Emitter-Collector Breakdown I = 100µA 5 V ECO E I O n-State Collector Current(5) Ee = 0.5mW/cm2, V = 5V C(ON) CE QSD123 4 16 mA QSD124 6 29 mA V Saturation Voltage(5) Ee = 0.5mW/cm2, I = 0.5mA 0.4 V CE(SAT) C t Rise Time V = 5V, R = 100Ω, I = 0.2mA 7 µs r CC L C t Fall Time 7 µs f ©2012 Fairchild Semiconductor Corporation www.fairchildsemi.com QSD123, QSD124 Rev. 1.3 2

Q S Typical Performance Characteristics D 1 2 Figure 1. Light Current vs. Radiant Intensity 3 100 Figure 2. Angular Response Curve , Q 110 100 90 80 70 S 120 60 D 1 )Am 130 50 2 ( tne 10 140 40 4 — rruC thgiL 160150 3020 Pla -)NO 1 170 10 sti (C c I S 180 0 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 il i c 0.1 o 0.0 0.2 0.4 0.6 0.8 1.0 n Ee - Radiant Intensity (mW/cm2) In f r a r Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage e d 101 101 Ie=1mW/cm2 P h o )An( tnerruC kraD 1100-01 tnerruC thgiL dezila 1100-01 IIIeee===000...152mmmWWW///cccmmm222 totransisto -IOEC 10-2 mroN -IL 10-2 INVeCo =Erm 0=a. 55limVzeWd /tcom:2 r TA= 25oC 10-3 10-3 0 5 10 15 20 25 30 0.1 1 1 0 VCE- Collector-Emitter Voltage (V) VCE- Collector-Emitter Voltage (V) Figure 5. Dark Current vs. Ambient Temperature 104 Normalized to: VCE= 25V tne 103 TA= 25oC rru C kra 102 VCE=25V D de VCE=10V z ila m 101 ro N - O EC 100 I 10-1 -40 -20 0 20 40 60 80 100 T - Ambient Temperature (oC) A ©2012 Fairchild Semiconductor Corporation www.fairchildsemi.com QSD123, QSD124 Rev. 1.3 3

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