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QRE1113GR产品简介:
ICGOO电子元器件商城为您提供QRE1113GR由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 QRE1113GR价格参考¥2.24-¥2.73。Fairchild SemiconductorQRE1113GR封装/规格:光学传感器 - 反射式 - 模拟输出, Reflective Optical Sensor 0.197" (5mm) 4-SMD, Gull Wing。您可以下载QRE1113GR参考资料、Datasheet数据手册功能说明书,资料中有QRE1113GR 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | SENSOR OPTO TRANS REFL SMD PHOTO光学开关(反射型,光电晶体管输出) Reflective Sensor |
产品分类 | |
品牌 | Fairchild Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 光学开关(反射型,光电晶体管输出),Fairchild Semiconductor QRE1113GR- |
数据手册 | |
产品型号 | QRE1113GR |
上升时间 | 20 us |
下降时间 | 20 us |
产品目录绘图 | |
产品目录页面 | |
产品种类 | 光学开关(反射型,光电晶体管输出) |
其它名称 | QRE1113GRCT |
包装 | 剪切带 (CT) |
单位重量 | 78 mg |
反向电压 | 5 V |
响应时间 | 20µs, 20µs |
商标 | Fairchild Semiconductor |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | 4-SMD,鸥翼型 |
工作温度 | -40°C ~ 85°C |
工厂包装数量 | 1000 |
感应方式 | Reflective |
感应方法 | 反射 |
感应距离 | 0.197"(5mm) |
最大工作温度 | + 85 C |
最大集电极电流 | 20 mA |
最小工作温度 | - 25 C |
标准包装 | 1 |
正向电压 | 1.2 V |
正向电流 | 20 mA |
波长 | 940 nm |
电压-集射极击穿(最大值) | 30V |
电流-DC正向(If) | 50mA |
电流-集电极(Ic)(最大值) | 20mA |
系列 | QRE1113 |
输出类型 | 光电晶体管 |
输出设备 | Phototransistor |
集电极—发射极最大电压VCEO | 30 V |
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Q R E 1 April 2016 1 1 3 , Q R E QRE1113, QRE1113GR 1 1 1 3 Miniature Reflective Object Sensor G R — M Features i n • Phototransistor Output • Two Leadform Options: Through Hole (QRE1113) ia t • No Contact Surface Sensing SMT Gull Wing (QRE1113GR) u r • Miniature Package • Two Packaging Options: Tube (QRE1113) e R • Lead Form Style: Gull Wing Tape and Reel (QRE1113GR) e f l e c t i QRE1113GR Package Dimensions v e O b j e c (cid:3)(cid:21)(cid:21)(cid:17)(cid:17)(cid:28)(cid:24)(cid:19)(cid:19)(cid:3) t S (cid:19)(cid:17)(cid:25)(cid:19) (cid:3)(cid:20)(cid:17)(cid:19)(cid:19)(cid:3) e (cid:3) (cid:3) n (cid:19)(cid:17)(cid:23)(cid:19) (cid:3)(cid:24)(cid:17)(cid:25)(cid:25)(cid:3) s (cid:23) (cid:22) o (cid:38)(cid:47) (cid:3)(cid:19)(cid:17)(cid:28)(cid:23)(cid:3) r (cid:22)(cid:17)(cid:25)(cid:19) (cid:3)(cid:20)(cid:17)(cid:27)(cid:19)(cid:3) (cid:3)(cid:22)(cid:17)(cid:21)(cid:19)(cid:3) (cid:3)(cid:21)(cid:17)(cid:24)(cid:28)(cid:3) (cid:38)(cid:47) (cid:3)(cid:19)(cid:17)(cid:26)(cid:28)(cid:3) (cid:3)(cid:19)(cid:17)(cid:28)(cid:23)(cid:3) (cid:20) (cid:21) (cid:3)(cid:20)(cid:17)(cid:25)(cid:25)(cid:3) (cid:55)(cid:50)(cid:51)(cid:3)(cid:57)(cid:44)(cid:40)(cid:58) (cid:47)(cid:36)(cid:49)(cid:39)(cid:3)(cid:51)(cid:36)(cid:55)(cid:55)(cid:40)(cid:53)(cid:49)(cid:3)(cid:53)(cid:40)(cid:38)(cid:50)(cid:48)(cid:48)(cid:40)(cid:49)(cid:39)(cid:36)(cid:55)(cid:44)(cid:50)(cid:49) (cid:3)(cid:19)(cid:17)(cid:23)(cid:19)(cid:3) (cid:20)(cid:17)(cid:26)(cid:19) (cid:19)(cid:17)(cid:20)(cid:26) (cid:3) (cid:3) (cid:3) (cid:20)(cid:17)(cid:24)(cid:19) (cid:19)(cid:17)(cid:19)(cid:26) (cid:3)(cid:20)(cid:17)(cid:20)(cid:19)(cid:3) (cid:19)(cid:17)(cid:25)(cid:20)(cid:3)(cid:49)(cid:50)(cid:48)(cid:17)(cid:3)(cid:11)(cid:23)(cid:59)(cid:12) (cid:19)(cid:17)(cid:28)(cid:19) (cid:11)(cid:19)(cid:17)(cid:22)(cid:22)(cid:24)(cid:27)(cid:12)(cid:3)(cid:41)(cid:47)(cid:36)(cid:55)(cid:3)(cid:36)(cid:53)(cid:40)(cid:36) (cid:23)(cid:17)(cid:27)(cid:19) (cid:3) (cid:3) (cid:23)(cid:17)(cid:23)(cid:19) (cid:49)(cid:50)(cid:55)(cid:40)(cid:54)(cid:29) (cid:54)(cid:44)(cid:39)(cid:40)(cid:3)(cid:57)(cid:44)(cid:40)(cid:58) (cid:36)(cid:17)(cid:3)(cid:49)(cid:50)(cid:3)(cid:44)(cid:49)(cid:39)(cid:56)(cid:54)(cid:55)(cid:53)(cid:60)(cid:3)(cid:54)(cid:55)(cid:36)(cid:49)(cid:39)(cid:36)(cid:53)(cid:39)(cid:3)(cid:36)(cid:51)(cid:51)(cid:47)(cid:44)(cid:40)(cid:54) (cid:3)(cid:3)(cid:3)(cid:3)(cid:55)(cid:50)(cid:3)(cid:55)(cid:43)(cid:44)(cid:54)(cid:3)(cid:51)(cid:36)(cid:38)(cid:46)(cid:36)(cid:42)(cid:40) (cid:37)(cid:17)(cid:3)(cid:36)(cid:47)(cid:47)(cid:3)(cid:39)(cid:44)(cid:48)(cid:40)(cid:49)(cid:54)(cid:44)(cid:50)(cid:49)(cid:54)(cid:3)(cid:36)(cid:53)(cid:40)(cid:3)(cid:44)(cid:49)(cid:3)(cid:48)(cid:44)(cid:47)(cid:47)(cid:44)(cid:48)(cid:40)(cid:55)(cid:40)(cid:53)(cid:54) (cid:38)(cid:17)(cid:3)(cid:55)(cid:50)(cid:47)(cid:40)(cid:53)(cid:36)(cid:49)(cid:38)(cid:40)(cid:3)(cid:50)(cid:41)(cid:3) (cid:19)(cid:17)(cid:20)(cid:24)(cid:48)(cid:48)(cid:3)(cid:50)(cid:49)(cid:3)(cid:36)(cid:47)(cid:47)(cid:3) (cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:49)(cid:50)(cid:49)(cid:16)(cid:49)(cid:50)(cid:48)(cid:44)(cid:49)(cid:36)(cid:47)(cid:3)(cid:39)(cid:44)(cid:48)(cid:40)(cid:49)(cid:54)(cid:44)(cid:50)(cid:49)(cid:54) (cid:39)(cid:17)(cid:3)(cid:39)(cid:53)(cid:36)(cid:58)(cid:44)(cid:49)(cid:42)(cid:3)(cid:41)(cid:44)(cid:47)(cid:40)(cid:49)(cid:36)(cid:48)(cid:40)(cid:29)(cid:3)(cid:48)(cid:46)(cid:55)(cid:16)(cid:36)(cid:53)(cid:56)(cid:22)(cid:20)(cid:22)(cid:36)(cid:85)(cid:72)(cid:89)(cid:21) © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com QRE1113, QRE1113GR Rev. 2.7
Q R QRE1113 Package Dimensions(1, 2) E 1 1 2.90 1 2.50 0.60 3, 0.40 Q 1.00 R 4 3 E 1 1 0.94 1 3 C L G 3.60 R 1.80 3.20 — C L M 0.94 i n i a 1 2 t u r e R 4.20 e 3.80 fl e c 0.40 t i v e 1.70 O 1.50 b j e c t S e n 10.4 s 8.4 o r 0~20° 0~20° Notes: 1. Dimensions for all drawings are in millimeters. 2. Tolerance of ±0.15 mm on all non-nominal dimensions. Schematic 1 2 3 4 Pin 1: Anode Pin 3: Collector Pin 2: Cathode Pin 4: Emitter © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com QRE1113, QRE1113GR Rev. 2.7 2
Q R Absolute Maximum Ratings E 1 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- 1 1 ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- 3 , tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The Q absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. R A E Symbol Parameter Value Unit 1 1 1 TOPR Operating Temperature -40 to +85 C 3 G TSTG Storage Temperature -40 to +90 C R T Soldering Temperature (Iron)(4 5, 6) 240 for 5 sec C — SOL-I T Soldering Temperature (Flow)(5, 6) 260 for 10 sec C M SOL-F i EMITTER n i a I Continuous Forward Current 50 mA t F u r VR Reverse Voltage 5 V e I Peak Forward Current(7) 1 A R FP e P Power Dissipation(3) 75 mW fl D e c SENSOR t i v VCEO Collector-Emitter Voltage 30 V e O V Emitter-Collector Voltage 5 V ECO b IC Collector Current 20 mA je c P Power Dissipation(3) 50 mW t D S e n s Electrical / Optical Characteristics o r Values are at T = 25°C unless otherwise noted. A Symbol Parameter Conditions Min. Typ. Max. Unit INPUT DIODE V Forward Voltage I = 20 mA 1.2 1.6 V F F l Reverse Leakage Current V = 5 V 10 A R R Peak Emission Wavelength I = 20 mA 940 nm PE F OUTPUT TRANSISTOR l Collector-Emitter Dark Current I = 0 mA, V = 20 V 100 nA D F CE COUPLED l On-State Collector Current I = 20 mA, V = 5 V(8) 0.10 0.40 mA C(ON) F CE I Cross-Talk Collector Current I = 20 mA, V = 5 V(9) 1 A CX F CE V Saturation Voltage 0.3 V CE(SAT) tr Rise Time VCC = 5 V, lC(ON) = 100 A, 20 s tf Fall Time RL = 100 k 20 s Notes: 3. Derate power dissipation linearly 1.00 mW/°C above 25°C. 4. RMA flux is recommended. 5. Methanol or isopropyl alcohols are recommended as cleaning agents. 6. Soldering iron 1/16" (1.6mm) from housing. 7. Pulse conditions: tp = 100 s; T = 10 ms. 8. Measured using an aluminum alloy mirror at d = 1 mm. 9. No reflective surface at close proximity. © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com QRE1113, QRE1113GR Rev. 2.7 3
Q R Typical Performance Curves E 1 1 1 3 TNERRUC RO 01..80 VIT FAC = E= 1 =20 55 m˚ VCA )Am( TN 01..80 , QRE1 TC d 0 ER 1 E R 1 LLOC 0.6 UC R 0.6 3G DEZIL 0.4 OTCEL 0.4 R — AM Sensing Object: LO RON -)NO 0.2 Mirror White Paper (90% reflective) - C)NO( C 0.2 Mini I( C 0.00 1 2 3 4 5 I 0.0 atu 0 4 8 12 16 20 r d-DISTANCE (mm) IF - FO RWARD CURRENT (mA) e Fig. 1 Normalized Collector Current vs. Distance R between device and reflector Fig. 2 Collector Current vs. Forward Current e f l e c t i v TNERRUC R 112...680 dT A= =1 2m5m˚C, 90% reflection TNERRUC 110012 TNVACo rE=m =2a 51li˚z0Ce Vd to: VCE = 10 V VCE = 5 V e Obje OTCELLOC 111...024 IIFF == 2205mmAA KRAD DEZ 100 ct Sen DE 0.8 IF =15mA ILA so ZILAM 0.6 IF =10mA MRON 10-1 r RON 0.4 IF =5mA - OE - )N 0.2 IC 10-2 O 0.0 25 40 55 70 85 ( C 0.1 1 10 I VCE - COLLECTOR EMITTER VOLTAGE (V) TA - Ambient Temperature (˚C) Fig. 3 Normalized Collector Current vs. Fig. 4 Collector Emitter Dark Current (Normalized) Collector to Emitter Voltage vs. Ambient Temperature © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com QRE1113, QRE1113GR Rev. 2.7 4
Q Typical Performance Curves (Continued) R E 1 1 50 100 VCC = 10 V 13 A) TA = 25˚C tTp=w1 =m 1s00 us , Q NT (m 40 )su TA = 25˚C RE ORWARD CURRE 2300 (E MIT LLAF DNA ES 10 tttffr IICC == 01. 3m AmA 1113GR — - FF 10 RI tr M I i n 0 1 ia 1.0 1.1 1.2 1.3 1.4 1.5 0.1 1 10 t u VF - FORWARD VOLTAGE (V) RL - LOAD RESISTANCE (KΩ) re Fig. 6 Forward Current vs. Forward Voltage Fig. 7 Rise and Fall Time vs. Load Resistance R e f l e c t 3.0 iv e V) 2.5 Y O TAGE ( 2.0 TISNET 1.0 bjec L N ARD VO 1.5 IIFF == 5200 mmAA I TNAIDA 00..98 t Sen ORW 1.0 IF = 10 mA R EV so F IT r V - F 0.5 ALER 0.7 0.0 -40 -20 0 20 40 60 80 0.6 0.4 0.2 0 0.2 0.4 0.6 TA - AMBIENT TEMPERATURE (˚C) ANGULAR DISPLACEMENT Fig. 8 Forward Voltage vs. Ambient Temperature Fig. 8 Radiation Diagram © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com QRE1113, QRE1113GR Rev. 2.7 5
Q R Taping Dimensions for GR option E 1 1 1 Progressive Direction 3 , Q R E 1 1 2.0±0.05 4.0 1 ø1.5 3 0.25 G R — 1.75 M i n 5.5±0.05 i a t 12.0±0.3 u r 4.75 e R e f l e c t i v 3.73 e O 8.0 b j 1.98 e c t S e General tolerance ±0.1 n Dimensions in mm s o r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com QRE1113, QRE1113GR Rev. 2.7 6
Q R Reel Dimensions E 1 1 1 3 , Q R E 2.2 ± 0.5 1 1 ø178.0 ± 1.0 1 3 G R — ø60.0 ± 0.5 M i n i a t u r e R e f ø13.0 ± 0.5 le c t i v e O b 9.0 ± 0.5 je c 12.0 ± 0.15 t S e n s o r Reflow Profile 260°C max. for 10 sec. max. 1°C to 5°C/sec 260°C ) C 220°C (° Pre-heating e 180°C to 200°C r 60 sec. max. u 1°C to 5°C/sec t above 220°C a r e p m 120 sec. max. e T Time (seconds) Note: Reflow soldering should not be done more than twice. © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com QRE1113, QRE1113GR Rev. 2.7 7
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