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  • 型号: Q6012LH2
  • 制造商: Littelfuse
  • 库位|库存: xxxx|xxxx
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Q6012LH2产品简介:

ICGOO电子元器件商城为您提供Q6012LH2由Littelfuse设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供Q6012LH2价格参考以及LittelfuseQ6012LH2封装/规格参数等产品信息。 你可以下载Q6012LH2参考资料、Datasheet数据手册功能说明书, 资料中有Q6012LH2详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRIAC ALTERNISTOR 600V 12A TO220双向可控硅 Altnstr 600V 12A 10-10-10 mA

产品分类

双向可控硅分离式半导体

GateTriggerCurrent-Igt

10 mA

GateTriggerVoltage-Vgt

1.3 V

品牌

Littelfuse

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体闸流管,双向可控硅,Littelfuse Q6012LH2-

数据手册

点击此处下载产品Datasheet点击此处下载产品Datasheet

产品型号

Q6012LH2

三端双向可控硅类型

可控硅 - 无缓冲器

不重复通态电流

100 A, 120 A

产品种类

双向可控硅

供应商器件封装

TO-220 隔离的标片

保持电流Ih最大值

15 mA

关闭状态漏泄电流(在VDRMIDRM下)

10 uA

包装

散装

商标

Littelfuse

安装类型

通孔

安装风格

Through Hole

封装

Bulk

封装/外壳

TO-220-3 隔离片

封装/箱体

TO-220-3

工厂包装数量

500

开启状态RMS电流-ItRMS

12 A

开启状态电压

1.6 V

最大工作温度

+ 125 C

最小工作温度

- 40 C

栅极触发电压-Vgt

1.3 V

栅极触发电流-Igt

10 mA

标准包装

500

电压-断态

600V

电压-栅极触发(Vgt)(最大值)

1.3V

电流-不重复浪涌50、60Hz(Itsm)

110A,120A

电流-保持(Ih)(最大值)

15mA

电流-栅极触发(Igt)(最大值)

10mA

电流-通态(It(RMS))(最大值)

12A

系列

Qxx12xx

配置

单一

额定重复关闭状态电压VDRM

600 V

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PDF Datasheet 数据手册内容提取

Thyristors 12 Amp Alternistor (High Commutation) Triacs Qxx12xHx Series RoHS Description This 12 Amp bidirectional solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Standard alternistor triac components operate with in-phase signals in Quadrants I or III and ONLY unipolar negative gate pulses for Quadrant II or III. The alternistor triac will not operate in Quadrant IV. These are used in circuit applications requiring a high dv/dt capability. Features & Benefits • RoHS Compliant • No contacts to wear Agency Approval out from reaction of • Glass – passivated switching events Agency Agency File Number junctions • Restricted (or limited) RFI • Voltage capability up to E71639* generation, depending 1000 V on activation point sine * - L Package Only • Surge capability up to wave 120 A • Requires only a small Main Features • The L-package has gate activation pulse in an isolation rating of each half-cycle Symbol Value Unit 2500V RMS • Recognized to UL 1557 I 12 A • Solid-state switching as an Electrically Isolated T(RMS) V /V 400, 600, 800 or 1000 V eliminates arcing or Semiconductor Device DRM RRM contact bounce that I 10 or 50 mA GT (Q1) create voltage transients Schematic Symbol Applications Excellent for AC switching and phase control applications such as heating, lighting, and motor speed controls. MT2 MT1 Typical applications are AC solid-state switches, light dimmers, power tools, lawn care equipment, home/brown goods and white goods appliances. G Alternistor Triacs (no snubber required) are used in applications with extremely inductive loads requiring highest commutation performance. Internally constructed isolated packages are offered for ease of heat sinking with highest isolation voltage. Additional Information Datasheet Resources Samples ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 10/29/19

Thyristors 12 Amp Alternistor (High Commutation) Triacs Absolute Maximum Ratings — Alternistor (3 Quadrants) Symbol Parameter Value Unit Qxx12LHy T = 90°C C I RMS on-state current (full sine wave) Qxx12RHy 12 A T(RMS) T = 105°C Qxx12NHy C Non repetitive surge peak on-state current f = 50 Hz t = 20 ms 110 I A TSM (full cycle, TJ initial = 25°C) f = 60 Hz t = 16.7 ms 120 I2t I2t Value for fusing t = 8.3 ms 60 A2s p di/dt Critical rate of rise of on-state current f = 120 Hz T = 125°C 70 A/μs J I Peak gate trigger current t=20μs T = 125°C 4 A GTM p J P Average gate power dissipation T = 125°C 0.5 W G(AV) J T Storage temperature range -40 to 150 °C stg T Operating junction temperature range -40 to 125 °C J Note: xx = voltage/10, y = sensitivity Electrical Characteristics (T = 25°C, unless otherwise specified) — Alternistor Triac (3 Quadrants) J Symbol Test Conditions Quadrant Qxx12xH2 Qxx12xH5 Unit I V = 12V R = 60 Ω I – II – III MAX. 10 50 mA GT D L V V = 12V R = 60 Ω I – II – III MAX. 1.3 1.3 V GT D L V V = V R = 3.3 kΩ T = 125°C I – II – III MIN. 0.2 0.2 V GD D DRM L J I I = 100mA MAX. 15 50 mA H T 400V 300 750 V = V Gate Open T = 125°C 600V 200 650 dv/dt D DRM J MIN. V/μs 800V 150 500 V = V Gate Open T = 100°C 1000V 150 300 D DRM J (dv/dt)c (di/dt)c = 6.5 A/ms T = 125°C MIN. 2 30 V/μs J t I = 2 x I PW = 15μs I = 17.0 A(pk) TYP. 4 4 μs gt G GT T Static Characteristics Symbol Test Conditions Value Unit V I = 17.0A t = 380 µs MAX. 1.60 V TM TM p T = 25°C 400-1000V 10 μA J I DRM V = V / V T = 125°C 400-800V MAX. 2 IRRM D DRM RRM J mA T = 100°C 1000V 3 J Thermal Resistances Symbol Parameter Value Unit Qxx12RHy 1.2 R Junction to case (AC) Qxx12NHy °C/W Ɵ(J-C) Qxx12LHy 2.3 Qxx12RHy 45 R Junction to ambient (AC) °C/W Ɵ(J-A) Qxx12LHy 90 Note: xx = voltage/10, y = sensitivity ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 10/29/19

Thyristors 12 Amp Alternistor (High Commutation) Triacs Figure 2: Normalized DC Gate Trigger Current for Figure 1: Definition of Quadrants All Quadrants vs. Junction Temperature ALL POLARITIES ARE REFERENCED TO MT1 4.0 MT2 POSITIVE (Positive Half Cycle) MT2 + MT2 C) (-)GIGATTE (+)IGGATTE T= 25 ºJ 3.0 IGT - REFMT1 QQIIIII QQIIV REFMT1+ IGT o of I/ I (GT GT2.0 MT2 MT2 Rati 1.0 (-)IGT (+)IGT GATE GATE 0.0 MT1 - MT1 -65 -40 -15 10 35 60 85 110 REF MT2 NEGATIVE REF Junction Temperature (TJ) - C (Negative Half Cycle) Note: Alternistors will not operate in QIV Figure 3: Normalized DC Holding Current Figure 4: Normalized DC Gate Trigger Voltage for vs. Junction Temperature All Quadrants vs. Junction Temperature 4.0 2.0 C) 25ºC) 3.0 = 25º 1.5 Ratio of I / I (T = HHJ 12..00 atio of V / V(TGTGTJ 01..50 R 0.0 0.0 -65 -40 -15 10 35 60 85 110 -65 -40 -15 10 35 60 85 110 Junction Temperature (T) - ºC Junction Temperature (T) - ºC J J Figure 5: Power Dissipation (Typical) Figure 6: Maximum Allowable Case Temperature vs. RMS On-State Current vs. On-State Current 14 130 CURRENT WAVEFORM: Sinusoidal e pation 12 LCOOANDD:U RCeTsIiOstNiv eA NorG ILnEd:u 3c6ti0v°e peratur 120 QQxxxx1122RNHH55 e On-State Power Dissi[P] -- WattsD(AV)10468 m Allowable Case Tem(T) - °CC1101890000 Qxx12LH5 g u Avera 2 Maxim 70 CLCOUOARNDRD:EU RNCeTTs IWiOstANivV eAE NoFrGO ILRnEdM:u :3c S6ti0ivn°eusoidal 0 60 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 RMS On-State Current [I ] -- Amps RMS On-State Current [I ] - Amps T(RMS) T(RMS) ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 10/29/19

Thyristors 12 Amp Alternistor (High Commutation) Triacs Figure 7: Maximum Allowable Ambient Temperature Figure 8: On-State Current vs. On-State Voltage vs. On-State Current (Typical) 120 20 Ambient Temperature T) - ºC A110178900000 CLCFORUOEARNEDRD A:EU INRRCTe TRs WIiAOsATtNiIVvN AEeGN Fo OG-r RNLInMEod: :uH 3 cSE6tAii0nvTue SsoINidKal egative InstantaneousCurrent (I) - AMPST11111024688 TC = 25ºC ax Allowable (456000 Positive or NOn-State 246 M 30 0 20 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0. 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Positive or Negative Instantaneous On-State Voltage RMS On-State Current [IT(RMS)] - AMPS (VT) - Volts Figure 9: Surge Peak On-State Current vs. Number of Cycles 1000 nt Supply Frequency: 60Hz Sinusoidal e Load: Resistive urr RMS On-State Current [I : Maximum] C T(RMS) e Rated Value at Specific Case Temperature at St n- 100 Notes: on-Repetitive O(I) - AMPSTSM10 12.. Gf Otroeaavtlmleteoedprw l ecoviornaaandgltut umrserou.ealr ymgh eana soyc t urb erberteeu l nrornets eptind edt aetuotrrev insdatg le.u aanndtidyl - jsiumtnamctetei o dnia tely N e ( g ur S k a e P 1 1 10 100 1000 Surge Current Duration - Full Cycles ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 10/29/19

Thyristors 12 Amp Alternistor (High Commutation) Triacs Soldering Parameters Reflow Condition Pb – Free assembly t - Temperature Min (T ) 150°C P s(min) TP Pre Heat - Temperature Max (T ) 200°C s(max) RRaammpp--uupp e Average ramp- u Tpim raet e(m (Liniq tuoi dmuasx T)e m(tsp)) (TL) to peak 56°0C –/ s1e8c0o nsde cmsax rutare TS(mTaxL) tL TS(max) to TL - Ramp-up Rate 5°C/second max pm PPrreehheeaatt RRaammpp--ddoown Reflow - Temperature (TL) (Liquidus) 217°C eT TS(min) - Time (min to max) (ts) 60 – 150 seconds tS Peak Temperature (T) 260+0/-5 °C P Time within 5°C of actual peak Temperature (t) 20 – 40 seconds 25 p time to peak temperature Ramp-down Rate 5°C/second max Time Time 25°C to peak Temperature (T) 8 minutes Max. P Do not exceed 280°C Physical Specifications Environmental Specifications Terminal Finish 100% Matte Tin-plated Test Specifications and Conditions Body Material UraLti nRge Vco-0gnized compound meeting flammability AC Blocking MACIL v-SoTltDag-7e5 @0, 1M25-1°0C4 f0o,r C1o0n0d8 Ah oAuprsplied Peak Terminal Material Copper Alloy MIL-STD-750, M-1051, Temperature Cycling 100 cycles; -40°C to +150°C; 15-min dwell time EIA / JEDEC, JESD22-A101 Design Considerations Temperature/Humidity 1008 hours; 320V - DC: 85°C; 85% rel humidity Careful selection of the correct component for the MIL-STD-750, M-1031, High Temp Storage 1008 hours; 150°C application’s operating parameters and environment will Low-Temp Storage 1008 hours; -40°C go a long way toward extending the operating life of the Resistance to Solder Heat MIL-STD-750 Method 2031 Thyristor. Good design practice should limit the maximum Solderability ANSI/J-STD-002, category 3, Test A continuous current through the main terminals to 75% of Lead Bend MIL-STD-750, M-2036 Cond E the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 10/29/19

Thyristors 12 Amp Alternistor (High Commutation) Triacs Dimensions — TO-220AB (R-Package) — Non-Isolated Mounting Tab Common with Center Lead TC MEASURING POIN T AREA (REF .) 0.17 IN2 Inches Millimeters Dimension ØE A O P .83.2103 A 0M.3i8n0 0M.4a2x0 9M.6in5 1M0.a6x7 MT2 B 0.105 0.115 2.67 2.92 B C C 0.230 0.250 5.84 6.35 13.36 D .526 D 0.590 0.620 14.99 15.75 E 0.142 0.147 3.61 3.73 7.01 .276 F 0.110 0.130 2.79 3.30 G 0.540 0.575 13.72 14.61 H 0.025 0.035 0.64 0.89 F NOTCH IN GATE LEAD J 0.195 0.205 4.95 5.21 TO ID. NON-ISOLATED K 0.095 0.105 2.41 2.67 R TAB G L 0.060 0.075 1.52 1.91 L M 0.085 0.095 2.16 2.41 H N 0.018 0.024 0.46 0.61 O 0.178 0.188 4.52 4.78 K N P 0.045 0.060 1.14 1.52 J M Note: Maximum torque to MT1 MT2 GATE be applied to mounting tab R 0.038 0.048 0.97 1.22 is 8 in-lbs. (0.904 Nm). Dimensions — TO-220AB (L-Package) — Isolated Mounting Tab T MEASURING POI NT AREA (REF .) 0.17 IN2 Inches Millimeters C Dimension O Min Max Min Max ØE A P .83.2103 A 0.380 0.420 9.65 10.67 B 0.105 0.115 2.67 2.92 B C 0.230 0.250 5.84 6.35 C 13.36 D 0.590 0.620 14.99 15.75 D .526 E 0.142 0.147 3.61 3.73 7.01 .276 F 0.110 0.130 2.79 3.30 G 0.540 0.575 13.72 14.61 H 0.025 0.035 0.64 0.89 F J 0.195 0.205 4.95 5.21 K 0.095 0.105 2.41 2.67 G R L 0.060 0.075 1.52 1.91 L M 0.085 0.095 2.16 2.41 H N 0.018 0.024 0.46 0.61 O 0.178 0.188 4.52 4.78 K N P 0.045 0.060 1.14 1.52 Note: Maximum torque to J M be applied to mounting tab R 0.038 0.048 0.97 1.22 MT1 MT2 GATE is 8 in-lbs. (0.904 Nm). ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 10/29/19

Thyristors 12 Amp Alternistor (High Commutation) Triacs Dimensions — TO-263AB (N-Package) — D2Pak Surface Mount TC MEASURING POINT AREA: 0.11 IN2 Inches Millimeters B V C Dimension MT2 E Min Max Min Max A 0.360 0.370 9.14 9.40 8.41 B 0.380 0.420 9.65 10.67 7.01 .331 A .276 C 0.178 0.188 4.52 4.78 S D 0.025 0.035 0.64 0.89 E 0.045 0.060 1.14 1.52 W U F 0.060 0.075 1.52 1.91 MT1 GATE K J G 0.095 0.105 2.41 2.67 G D H .83.2103 H 0.092 0.102 2.34 2.59 F J 0.018 0.024 0.46 0.61 1168 2.16 K 0.090 0.110 2.29 2.79 .460 .085 S 0.590 0.625 14.99 15.88 V 0.035 0.045 0.89 1.14 U 0.002 0.010 0.05 0.25 7.01 7.01 .276 .276 W 0.040 0.070 1.02 1.78 16.89 .665 8.89 1.40 .350 .055 3.81 .150 2.03 .080 6.60 .260 Product Selector Voltage Gate Sensitivity Quadrants Part Number Type Package 400V 600V 800V 1000V I – II – III Qxx12LH2 X X X 10 mA Alternistor Triac TO-220L Qxx12RH2 X X X 10 mA Alternistor Triac TO-220R Qxx12NH2 X X X 10 mA Alternistor Triac TO-263 D²-PAK Qxx12LH5 X X X X 50 mA Alternistor Triac TO-220L Qxx12RH5 X X X X 50 mA Alternistor Triac TO-220R Qxx12NH5 X X X X 50 mA Alternistor Triac TO-263 D²-PAK Packing Options Part Number Marking Weight Packing Mode Base Quantity Qxx12L/RHyTP Qxx12L/RHy 2.2 g Tube Pack 500 (50 per tube) Qxx12NHyTP Qxx12NHy 1.6 g Tube 500 (50 per tube) Qxx12NHyRP Qxx12NHy 1.6 g Embossed Carrier 500 Note: xx = Voltage/10; y = Sensitivity ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 10/29/19

Thyristors 12 Amp Alternistor (High Commutation) Triacs TO-263 Embossed Carrier Reel Pack (RP) Meets all EIA-481-2 Standards 0.63 0.157 (16.0) (4.0) Gate 0.059 DIA (1.5) MT1 0.945 0.827 * (24.0) (21.0) *Cover tape MT2 12.99 0.512 (13.0) Arbor (330.0) Hole Dia. Dimensions are in inches (and millimeters). 1.01 (25.7) Direction of Feed Part Numbering System Part Marking System Q 60 12 L H5 56 TO-220 AB - (L and R Package) TO-263 AB - (N Package) Device Type Lead Form Dimensions Q: Alternistor xx: Lead Form Option Voltage Rating 40: 400V Sensitivity & type Q6012RH5 H2: 10mA (QI, II, III) 60: 600V YMXXX H5: 50mA (QI, II, III) 80: 800V K0: 1000V ® Current Rating Package Type 12: 12A L : TO-220 Isolated R : TO-220 Non-Isolated N : TO-263 (D2Pak) Date Code Marking Y:Year Code M: Month Code XXX: Lot Trace Code Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimier-electronics. ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 10/29/19