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PZTA96ST1G产品简介:
ICGOO电子元器件商城为您提供PZTA96ST1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 PZTA96ST1G价格参考。ON SemiconductorPZTA96ST1G封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 PNP 450V 500mA 1.5W 表面贴装 SOT-223。您可以下载PZTA96ST1G参考资料、Datasheet数据手册功能说明书,资料中有PZTA96ST1G 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANS PNP HV 450V SOT-223两极晶体管 - BJT SS HV XTR PNP 400V SOT223 |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | ON Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,两极晶体管 - BJT,ON Semiconductor PZTA96ST1G- |
数据手册 | |
产品型号 | PZTA96ST1G |
PCN设计/规格 | |
不同 Ib、Ic时的 Vce饱和值(最大值) | 600mV @ 2mA,20mA |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 50 @ 10mA,10V |
产品种类 | 两极晶体管 - BJT |
供应商器件封装 | SOT-223 |
其它名称 | PZTA96ST1G-ND |
功率-最大值 | 1.5W |
包装 | 带卷 (TR) |
发射极-基极电压VEBO | 4 V |
商标 | ON Semiconductor |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-261-4,TO-261AA |
封装/箱体 | SOT-223-4 |
工厂包装数量 | 1000 |
晶体管极性 | PNP |
晶体管类型 | PNP |
最大功率耗散 | 1.5 W |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 0.5 A |
最小工作温度 | - 65 C |
标准包装 | 1,000 |
电压-集射极击穿(最大值) | 450V |
电流-集电极(Ic)(最大值) | 500mA |
电流-集电极截止(最大值) | - |
直流集电极/BaseGainhfeMin | 50 |
系列 | PZTA96S |
配置 | Single |
集电极—发射极最大电压VCEO | - 450 V |
集电极—基极电压VCBO | - 450 V |
集电极—射极饱和电压 | - 0.6 V |
集电极连续电流 | - 500 mA |
频率-跃迁 | - |
PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS COLLECTOR 2,4 Rating Symbol Value Unit Collector−Emitter Voltage VCEO −450 Vdc BASE Collector−Base Voltage VCBO −450 Vdc 1 Emitter−Base Voltage VEBO −5.0 Vdc Collector Current IC −500 mAdc EMITTER 3 Total Power Dissipation Up to PD W TA = 25°C (Note 1) 1.5 4 Storage Temperature Range Tstg −65 to +150 °C 1 Junction Temperature TJ 150 °C 2 3 Stresses exceeding Maximum Ratings may damage the device. Maximum SOT−223 (TO−261) Ratings are stress ratings only. Functional operation above the Recommended CASE 318E Operating Conditions is not implied. Extended exposure to stresses above the STYLE 1 Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit AYW Thermal Resistance, R(cid:2)JA °C ZTA96(cid:2) Junction−to−Ambient (Note 2) 83.3 (cid:2) 2. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. 1 x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. A = Assembly Location ELECTRICAL CHARACTERISTICS (Note 3) Y = Year Characteristic Symbol Min Max Unit W = Work Week (cid:2) = Pb−Free Package OFF CHARACTERISTICS (Note: Microdot may be in either location) Collector−Emitter Breakdown Voltage V(BR)CEO Vdc (IC = −1.0 mAdc, IB = 0) −450 − Collector−Emitter Breakdown Voltage V(BR)CBO Vdc ORDERING INFORMATION (IC = −100 (cid:3)Adc, IE = 0) −450 − Device Package Shipping† Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = −10 (cid:3)Adc, IC = 0) −5.0 − PZTA96ST1G SOT−223 1000/Tape & Reel Collector−Base Cutoff Current ICBO (cid:3)Adc (Pb−Free) (VCB = −400 Vdc, IE = 0) − −0.1 †For information on tape and reel specifications, Emitter−Base Cutoff Current IEBO (cid:3)Adc irnecfelurd toin ogu pr aTrat poeri eanntda tRioene la Pnadc tkaapgei nsgiz Sesp,e pclieficaasteions (VBE = −4.0 Vdc, IC = 0) − −0.1 Brochure, BRD8011/D. ON CHARACTERISTICS DC Current Gain (Note 4) hFE − (IC = −10 mAdc, VCE = −10 Vdc) 50 150 Saturation Voltages Vdc (IC = −20 mAdc, IB = −2.0 mAdc) VCE(sat) − −0.6 (IC = −20 mAdc, IB = −2.0 mAdc) VBE(sat) − −1.0 3. TA = 25°C unless otherwise noted. 4. Pulse Test: Pulse Width ≤ 300(cid:3)s; Duty Cycle = 2.0%. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: September, 2013 − Rev. 5 PZTA96ST1/D
PZTA96ST1G TYPICAL CHARACTERISTICS 1000 0.4 VCE = 10 V N O N 150°C ATI IC/IB = 10 GAI 25°C UR 0.3 DC CURRENT 11000 −55°C OLL−EMIT SATVOLTAGE (V)0.2 150°C 25°C −55°C h, FE , Cat) 0.1 s E( C V 1 0 0.1 1 10 100 1000 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage 1.0 1.0 N O ATI 0.8 −55°C ON 0.8 −55°C R R U E T SATE (V)0.6 25°C MITTE (V) 0.6 25°C MIG −EG E−EOLTA0.4 ASEOLTA 0.4 BASV 150°C , Bn)V 150°C , E(sat) 0.2 VBE(o 0.2 VB IC/IB = 10 VCE = 10 V 0 0 0.1 1 10 100 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter “On” Voltage 1000 100 TH VCE = 2 V D E (pF) 100 Cib ANDWIHz) C BM AN N−T ( T AIC10 CI Cob GU A −D P TO A 10 NR C EP C, RR U C , T f 1 1 0.1 1 10 100 1000 0.1 1 10 100 VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 5. Capacitances Figure 6. Current−Gain−Bandwidth Product http://onsemi.com 2
PZTA96ST1G PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 MILLIMETERS INCHES HE E DAIM 1M.5IN0 N1.O6M3 M1.A75X 0M.0I6N0 0N.O06M4 0M.0A6X8 1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004 b 0.60 0.75 0.89 0.024 0.030 0.035 b1 2.90 3.06 3.20 0.115 0.121 0.126 c 0.24 0.29 0.35 0.009 0.012 0.014 b D 6.30 6.50 6.70 0.249 0.256 0.263 e1 E 3.30 3.50 3.70 0.130 0.138 0.145 e e 2.20 2.30 2.40 0.087 0.091 0.094 e1 0.85 0.94 1.05 0.033 0.037 0.041 L 0.20 −−− −−− 0.008 −−− −−− C L1 1.50 1.75 2.00 0.060 0.069 0.078 (cid:2) A H(cid:2)E 60.7°0 7.−00 71.03°0 0.206°4 0.2−76 01.208°7 0.08 (0003) A1 STYLE 1: L L1 PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 6.3 2.3 2.3 0.248 0.091 0.091 2.0 0.079 (cid:2) (cid:3) 1.5 SCALE 6:1 mm inches 0.059 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com PZTA96ST1/D 3
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