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PZT751T1G产品简介:
ICGOO电子元器件商城为您提供PZT751T1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 PZT751T1G价格参考。ON SemiconductorPZT751T1G封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 PNP 60V 2A 75MHz 800mW 表面贴装 SOT-223。您可以下载PZT751T1G参考资料、Datasheet数据手册功能说明书,资料中有PZT751T1G 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANS SS HC PNP 2A 60V SOT223两极晶体管 - BJT 2A 80V PNP |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | ON Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,两极晶体管 - BJT,ON Semiconductor PZT751T1G- |
数据手册 | |
产品型号 | PZT751T1G |
PCN设计/规格 | |
不同 Ib、Ic时的 Vce饱和值(最大值) | 500mV @ 200mA,2A |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 75 @ 1A,2V |
产品目录页面 | |
产品种类 | 两极晶体管 - BJT |
供应商器件封装 | SOT-223 |
其它名称 | PZT751T1GOS |
功率-最大值 | 800mW |
包装 | 带卷 (TR) |
发射极-基极电压VEBO | 5 V |
商标 | ON Semiconductor |
增益带宽产品fT | 75 MHz |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-261-4,TO-261AA |
封装/箱体 | SOT-223-4 |
工厂包装数量 | 1000 |
晶体管极性 | PNP |
晶体管类型 | PNP |
最大功率耗散 | 0.8 W |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 2 A |
最小工作温度 | - 65 C |
标准包装 | 1,000 |
电压-集射极击穿(最大值) | 60V |
电流-集电极(Ic)(最大值) | 2A |
电流-集电极截止(最大值) | - |
直流集电极/BaseGainhfeMin | 75 |
系列 | PZT751 |
配置 | Single |
集电极—发射极最大电压VCEO | 60 V |
集电极—基极电压VCBO | 80 V |
集电极—射极饱和电压 | 0.5 V |
集电极连续电流 | 2 A |
频率-跃迁 | 75MHz |
PZT751 PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. www.onsemi.com Features SOT−223 PACKAGE HIGH CURRENT • High Current NPN SILICON TRANSISTOR • The SOT−223 Package can be soldered using wave or reflow. • SURFACE MOUNT SOT−223 Package Ensures Level Mounting, Resulting in Improved Thermal Conduction, and Allows Visual Inspection of 4 Soldered Joints. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die 1 2 • 3 NPN Complement is PZT651T1G SOT−223 • CASE 318E S Prefix for Automotive and Other Applications Requiring Unique STYLE 1 Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable COLLECTOR 2, 4 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* BASE 1 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) EMITTER 3 Rating Symbol Value Unit Collector−Emitter Voltage VCEO −60 Vdc MARKING DIAGRAM Collector−Base Voltage VCBO −80 Vdc Emitter−Base Voltage VEBO −5.0 Vdc AYW Collector Current IC −2.0 Adc ZT751(cid:2) (cid:2) Total Power Dissipation PD W 1 @ TA = 25°C (Note 1) 0.8 mW/°C Derate above 25°C 6.4 A = Assembly Location Storage Temperature Range Tstg −65 to 150 °C Y = Year W = Work Week Junction Temperature TJ 150 °C (cid:2) = Pb−Free Package Stresses exceeding those listed in the Maximum Ratings table may damage the (Note: Microdot may be in either location) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum ORDERING INFORMATION recommended footprint. Device Package Shipping† THERMAL CHARACTERISTICS PZT751T1G SOT−223 1,000 / Tape & Reel Rating Symbol Value Unit (Pb−Free) Thermal Resistance from Junction−to− R(cid:2)JA 156 °C/W SPZT751T1G SOT−223 1,000 / Tape & Reel Ambient in Free Air (Pb−Free) Maximum Temperature for Soldering TL 260 °C Purposes †For information on tape and reel specifications, Time in Solder Bath 10 Sec including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 − Rev. 9 PZT751T1/D
PZT751 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage V(BR)CEO Vdc (IC = −10 mAdc, IB = 0) −60 − Collector−Emitter Breakdown Voltage V(BR)CBO Vdc (IC = −100 (cid:3)Adc, IE = 0) −80 − Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = −10 (cid:3)Adc, IC = 0) −5.0 − Base−Emitter Cutoff Current IEBO (cid:3)Adc (VEB = −4.0 Vdc) − −0.1 Collector−Base Cutoff Current ICBO nAdc (VCB = −80 Vdc, IE = 0) − −100 ON CHARACTERISTICS (Note 2) DC Current Gain hFE − (IC = −50 mAdc, VCE = −2.0 Vdc) 75 − (IC = −500 mAdc, VCE = −2.0 Vdc) 75 − (IC = −1.0 Adc, VCE = −2.0 Vdc) 75 − (IC = −2.0 Adc, VCE = −2.0 Vdc) 40 − Collector−Emitter Saturation Voltages VCE(sat) Vdc (IC = −2.0 Adc, IB = −200 mAdc) − −0.5 (IC = −1.0 Adc, IB = −100 mAdc) − −0.3 Base−Emitter Voltages VBE(on) Vdc (IC = −1.0 Adc, VCE = −2.0 Vdc) − −1.0 Base−Emitter Saturation Voltage VBE(sat) Vdc (IC = −1.0 Adc, IB = −100 mAdc) − −1.2 Current−Gain−Bandwidth fT MHz (IC = −50 mAdc, VCE = −5.0 Vdc, f = 100 MHz) 75 − 2. Pulse Test: Pulse Width ≤300(cid:3)s, Duty Cycle =2.0%. www.onsemi.com 2
PZT751 TYPICAL CHARACTERISTICS 250 -2.0 TJ = 125°C 225 VCE = -2.0 V -1.8 200 -1.6 N AI 175 S) -1.4 NT G 150 25°C VOLT -1.2 RRE 125 GE ( -1.0 VBE(sat) @ IC/IB = 10 U A C T , DC E17050 -(cid:2)55°C V, VOL --00..86 VBE(on) @ VCE = 2.0 V F h 50 -0.4 25 -0.2 VCE(sat) @ IC/IB = 10 0 0 -10 -(cid:2)20 -(cid:2)50 -100 -(cid:2)200 -(cid:2)500 -1.0 A-2.0 A-4.0 A -50 -100 -200 -500 -1.0 A -2.0 A -4.0 A IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. Typical DC Current Gain Figure 2. On Voltages S)-1.0 T L O-0.9 V GE (-0.8 TJ = 25°C A LT-0.7 O V R -0.6 E T T-0.5 MI E --0.4 OR IC = -500 mA IC = -2.0 A T-0.3 C E LL-0.2 CO IC = -10 mA IC = -100 mA , E-0.1 C V 0 -0.05-0.1 -0.2 -0.5 -1.0-2.0 -5.0 -10 -20 -50-100-200 -500 IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region www.onsemi.com 3
PZT751 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 D ISSUE N b1 NOTES: (cid:3)(cid:4)1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. (cid:3)(cid:4)2. CONTROLLING DIMENSION: INCH. 4 MILLIMETERS INCHES HE E DAIM 1M.5IN0 N1.O6M3 M1.A75X 0M.0I6N0 0N.O06M4 0M.0A6X8 1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004 b 0.60 0.75 0.89 0.024 0.030 0.035 b1 2.90 3.06 3.20 0.115 0.121 0.126 c 0.24 0.29 0.35 0.009 0.012 0.014 b D 6.30 6.50 6.70 0.249 0.256 0.263 e1 E 3.30 3.50 3.70 0.130 0.138 0.145 e e 2.20 2.30 2.40 0.087 0.091 0.094 e1 0.85 0.94 1.05 0.033 0.037 0.041 L 0.20 −−− −−− 0.008 −−− −−− C L1 1.50 1.75 2.00 0.060 0.069 0.078 (cid:2) A H(cid:2)E 60.7°0 7.−00 71.03°0 0.206°4 0.2−76 01.208°7 0.08 (0003) STYLE 1: A1 L L1 PIN 1.BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 6.3 2.3 2.3 0.248 0.091 0.091 2.0 0.079 (cid:2) (cid:3) 1.5 mm SCALE 6:1 0.059 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative www.onsemi.com PZT751T1/D 4
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