Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

PEMH2; PUMH2 NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k Rev. 5 — 5 December 2011 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-EquippedTransistors(RET) in Surface-Mounted Device(SMD) plastic packages. Table 1. Product overview Type number Package NPN/PNP PNP/PNP Package complement complement configuration NXP JEITA PEMH2 SOT666 - PEMD12 PEMB2 ultra small and flat lead PUMH2 SOT363 SC-88 PUMD12 PUMB2 very small 1.2 Features and benefits  100mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101qualified 1.3 Applications  Low current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - 50 V CEO I output current - - 100 mA O R1 bias resistor1 (input) 33 47 61 k R2/R1 bias resistor ratio 0.8 1 1.2

PEMH2; PUMH2 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1 GND (emitter)TR1 6 5 4 6 5 4 2 input (base)TR1 3 output (collector)TR2 4 GND (emitter)TR2 R1 R2 5 input (base)TR2 TR2 1 2 3 TR1 6 output (collector)TR1 001aab555 R2 R1 1 2 3 sym063 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PEMH2 - plastic surface-mounted package; 6leads SOT666 PUMH2 SC-88 plastic surface-mounted package; 6leads SOT363 4. Marking Table 5. Marking codes Type number Marking code[1] PEMH2 Z2 PUMH2 2*H [1] * = placeholder for manufacturing site code PEMH2_PUMH2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 5 December 2011 2 of 14

PEMH2; PUMH2 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 10 V EBO V input voltage I positive - +40 V negative - 10 V I output current - 100 mA O I peak collector current single pulse; - 100 mA CM t 1ms p P total power dissipation T 25C tot amb PEMH2(SOT666) [1][2] - 200 mW PUMH2(SOT363) [1] - 200 mW Per device P total power dissipation T 25C tot amb PEMH2(SOT666) [1][2] - 300 mW PUMH2(SOT363) [1] - 300 mW T junction temperature - 150 C j T ambient temperature 65 +150 C amb T storage temperature 65 +150 C stg [1] Device mounted on an FR4Printed-Circuit Board(PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. PEMH2_PUMH2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 5 December 2011 3 of 14

PEMH2; PUMH2 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k 006aac749 400 Ptot (mW) 300 200 100 0 -75 -25 25 75 125 175 Tamb (°C) FR4PCB, standard footprint Fig 1. Per device: Power derating curve for SOT363(SC-88) and SOT666 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor R thermal resistance from in free air th(j-a) junction to ambient PEMH2(SOT666) [1][2] - - 625 K/W PUMH2(SOT363) [1] - - 625 K/W Per device R thermal resistance from in free air th(j-a) junction to ambient PEMH2(SOT666) [1][2] - - 417 K/W PUMH2(SOT363) [1] - - 417 K/W [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. PEMH2_PUMH2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 5 December 2011 4 of 14

PEMH2; PUMH2 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k 103 006aac751 duty cycle = 1 Zth(j-a) 0.75 (K/W) 0.5 0.33 102 0.2 0.1 0.05 0.02 0.01 10 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for PEMH2(SOT666); typical values 103 006aac750 duty cycle = 1 Zth(j-a) 0.75 (K/W) 0.5 0.33 102 0.2 0.1 0.05 0.02 0.01 10 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4PCB, standard footprint Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for PUMH2(SOT363); typical values PEMH2_PUMH2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 5 December 2011 5 of 14

PEMH2; PUMH2 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k 7. Characteristics Table 8. Characteristics T =25C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit Per transistor I collector-base cut-off V =50V; I =0A - - 100 nA CBO CB E current I collector-emitter cut-off V =30V; I =0A - - 1 A CEO CE B current V =30V; I =0A; - - 5 A CE B T =150C j I emitter-base cut-off V =5V; I =0A - - 90 A EBO EB C current h DCcurrent gain V =5V; I =5mA 80 - - FE CE C V collector-emitter I =10mA; - - 150 mV CEsat C saturation voltage I =0.5mA B V off-state input voltage V =5V; I =100A - 1.2 0.8 V I(off) CE C V on-state input voltage V =0.3V; I =2mA 3 1.6 - V I(on) CE C R1 bias resistor1 (input) 33 47 61 k R2/R1 bias resistor ratio 0.8 1 1.2 C collector capacitance V =10V; 2.5 pF c CB I =i =0A; f=1MHz E e f transition frequency V =5V; I =10mA; [1] 230 MHz T CE C f=100MHz [1] Characteristics of built-in transistor PEMH2_PUMH2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 5 December 2011 6 of 14

PEMH2; PUMH2 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k 103 006aac752 1 006aac753 hFE (1) (2) VCEsat (V) (3) 102 (1) (2) 10-1 (3) 10 1 10-2 10-1 1 10 102 10-1 1 10 102 IC (mA) IC (mA) V =5V I /I =20 CE C B (1) Tamb=100C (1) Tamb=100C (2) Tamb=25C (2) Tamb=25C (3) Tamb=40C (3) Tamb=40C Fig 4. DCcurrent gain as a function of collector Fig 5. Collector-emitter saturation voltage as a current; typical values function of collector current; typical values 006aac754 006aac755 10 10 VI(on) VI(off) (V) (V) (1) (1) (2) (2) 1 (3) 1 (3) 10-1 10-1 10-1 1 10 102 10-1 1 10 IC (mA) IC (mA) V =0.3V V =5V CE CE (1) Tamb=40C (1) Tamb=40C (2) Tamb=25C (2) Tamb=25C (3) Tamb=100C (3) Tamb=100C Fig 6. On-state input voltage as a function of Fig 7. Off-state input voltage as a function of collector current; typical values collector current; typical values PEMH2_PUMH2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 5 December 2011 7 of 14

PEMH2; PUMH2 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k 2.0 006aac756 103 006aac757 Cc (pF) 1.6 fT (MHz) 1.2 102 0.8 0.4 0.0 10 0 10 20 30 40 50 10-1 1 10 102 VCB (V) IC (mA) f=1MHz; Tamb=25C VCE=5V; Tamb=25C Fig 8. Collector capacitance as a function of Fig 9. Transition frequency as a function of collector collector-base voltage; typical values current; typical values of built-in transistor 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 1.7 0.6 2.2 1.1 1.5 0.5 1.8 0.8 6 5 4 6 5 4 0.45 0.15 0.3 0.1 1.7 1.3 2.2 1.35 1.5 1.1 2.0 1.15 pin 1 pin 1 index index 1 2 3 1 2 3 0.5 00..2177 00..1088 0.65 00..32 00..2150 1 1.3 Dimensions in mm 04-11-08 Dimensions in mm 06-03-16 Fig 10. Package outline PEMH2(SOT666) Fig 11. Package outline PUMH2(SOT363) PEMH2_PUMH2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 5 December 2011 8 of 14

PEMH2; PUMH2 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type Package Description Packing quantity number 3000 4000 8000 10000 PEMH2 SOT666 2mm pitch, 8mm tape and reel - - -315 - 4mm pitch, 8mm tape and reel - -115 - - PUMH2 SOT363 4mm pitch, 8mm tape and reel; T1 [2] -115 - - -135 4mm pitch, 8mm tape and reel; T2 [3] -125 - - -165 [1] For further information and the availability of packing methods, see Section14. [2] T1: normal taping [3] T2: reverse taping 11. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 0.3 0.538 (2×) (2×) placement area 0.55 2 1.7 1.075 (2×) solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 0.6 (4×) (2×) 0.5 0.65 (4×) (2×) sot666_fr Reflow soldering is the only recommended soldering method. Fig 12. Reflow soldering footprint PEMH2(SOT666) PEMH2_PUMH2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 5 December 2011 9 of 14

PEMH2; PUMH2 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k 2.65 solder lands 2.35 1.5 0.6 0.5 0.4 (2×) (4×) (4×) solder resist solder paste 0.5 0.6 occupied area (4×) (2×) 0.6 Dimensions in mm (4×) 1.8 sot363_fr Fig 13. Reflow soldering footprint PUMH2(SOT363) 1.5 solder lands 4.5 0.3 2.5 solder resist occupied area 1.5 Dimensions in mm preferred transport 1.3 1.3 direction during soldering 2.45 5.3 sot363_fw Fig 14. Wave soldering footprint PUMH2(SOT363) PEMH2_PUMH2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 5 December 2011 10 of 14

PEMH2; PUMH2 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PEMH2_PUMH2v.5 20111205 Product data sheet - PEMH2_PUMH2v.4 Modifications: • Table 1 “Product overview”: corrected PEMH2_PUMH2v.4 20111116 Product data sheet - PEMH2_PUMH2v.3 PEMH2_PUMH2v.3 20040414 Product data sheet - PEMH2_PUMH2v.2 PEMH2_PUMH2v.2 20031002 Product specification - PEMH2v.1 PUMH2v.1 PEMH2v.1 20011022 Preliminary specification - - PUMH2v.1 19990803 Product specification - - PEMH2_PUMH2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 5 December 2011 11 of 14

PEMH2; PUMH2 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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PEMH2_PUMH2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 5 December 2011 12 of 14

PEMH2; PUMH2 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k Export control — This document as well as the item(s) described herein 13.4 Trademarks may be subject to export control regulations. Export might require a prior authorization from competent authorities. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PEMH2_PUMH2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 5 December 2011 13 of 14

PEMH2; PUMH2 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k 15. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . 8 10 Packing information . . . . . . . . . . . . . . . . . . . . . 9 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14 Contact information. . . . . . . . . . . . . . . . . . . . . 13 15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 5 December 2011 Document identifier: PEMH2_PUMH2