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PEMH11; PUMH11 NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 6 — 29 November 2011 Product data sheet 1. Product profile 1.1 General description NPN/NPN Resistor-Equipped Transistors(RET) in Surface-Mounted Device(SMD) plastic packages. Table 1. Product overview Type number Package NPN/PNP PNP/PNP Package complement complement configuration NXP JEITA PEMH11 SOT666 - PEMD3 PEMB11 ultra small and flat lead PUMH11 SOT363 SC-88 PUMD3 PUMB11 very small 1.2 Features and benefits  100mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101 qualified 1.3 Applications  Low current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - 50 V CEO I output current - - 100 mA O R1 bias resistor 1 (input) 7 10 13 k R2/R1 bias resistor ratio 0.8 1 1.2

PEMH11; PUMH11 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1 GND (emitter) TR1 6 5 4 6 5 4 2 input (base) TR1 3 output (collector) TR2 4 GND (emitter) TR2 R1 R2 5 input (base) TR2 TR2 1 2 3 TR1 6 output (collector) TR1 001aab555 R2 R1 1 2 3 sym063 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PEMH11 - plastic surface-mounted package; 6leads SOT666 PUMH11 SC-88 plastic surface-mounted package; 6leads SOT363 4. Marking Table 5. Marking codes Type number Marking code[1] PEMH11 H1 PUMH11 H*1 [1] * = placeholder for manufacturing site code. PEMH11_PUMH11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 29 November 2011 2 of 14

PEMH11; PUMH11 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 10 V EBO V input voltage I positive - +40 V negative - 10 V I output current - 100 mA O I peak collector current - 100 mA CM P total power dissipation T 25C [1] tot amb PEMH11(SOT666) [2] - 200 mW PUMH11(SOT363) - 200 mW Per device P total power dissipation T 25C [1] tot amb PEMH11(SOT666) [2] - 300 mW PUMH11(SOT363) - 300 mW T junction temperature - 150 C j T ambient temperature 65 +150 C amb T storage temperature 65 +150 C stg [1] Device mounted on an FR4 Printed-Circuit Board(PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. PEMH11_PUMH11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 29 November 2011 3 of 14

PEMH11; PUMH11 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k 006aac749 400 Ptot (mW) 300 200 100 0 -75 -25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 1. Per device: Power derating curve for SOT363 (SC-88) and SOT666 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor R thermal resistance from in free air [1] th(j-a) junction to ambient PEMH11(SOT666) [2] - - 625 K/W PUMH11(SOT363) - - 625 K/W Per device R thermal resistance from in free air [1] th(j-a) junction to ambient PEMH11(SOT666) [2] - - 417 K/W PUMH11(SOT363) - - 417 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. PEMH11_PUMH11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 29 November 2011 4 of 14

PEMH11; PUMH11 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k 103 006aac751 duty cycle = 1 Zth(j-a) 0.75 (K/W) 0.5 0.33 102 0.2 0.1 0.05 0.02 0.01 10 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for PEMH11(SOT666); typical values 103 006aac750 duty cycle = 1 Zth(j-a) 0.75 (K/W) 0.5 0.33 102 0.2 0.1 0.05 0.02 0.01 10 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for PUMH11(SOT363); typical values PEMH11_PUMH11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 29 November 2011 5 of 14

PEMH11; PUMH11 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k 7. Characteristics Table 8. Characteristics T =25C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit Per transistor I collector-base V =50V; I =0A - - 100 nA CBO CB E cut-offcurrent I collector-emitter V =30V; I =0A - - 1 A CEO CE B cut-off current V =30V; I =0A; - - 5 A CE B T =150C j I emitter-base V =5V; I =0A - - 400 A EBO EB C cut-offcurrent h DCcurrent gain V =5V; I =5mA 30 - - FE CE C V collector-emitter I =10mA; I =0.5mA - - 150 mV CEsat C B saturation voltage V off-state input V =5V; I =100A - 1.1 0.8 V I(off) CE C voltage V on-state input V =0.3V; I =10mA 2.5 1.8 - V I(on) CE C voltage R1 bias resistor 1 (input) 7 10 13 k R2/R1 bias resistor ratio 0.8 1 1.2 C collector capacitance V =10V; I =i =0A; - - 2.5 pF c CB E e f=1MHz f transition frequency V =5V; I =10mA; [1] - 230 - MHz T CB C f=100MHz [1] Characteristics of built-in transistor. PEMH11_PUMH11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 29 November 2011 6 of 14

PEMH11; PUMH11 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k 103 006aac768 1 006aac769 hFE (1) VCEsat (V) 102 (2) (3) 10-1 (1) 10 (2) (3) 1 10-2 10-1 1 10 102 1 10 102 IC (mA) IC (mA) V =5V I /I =20 CE C B (1) Tamb=100C (1) Tamb=100C (2) Tamb=25C (2) Tamb=25C (3) Tamb=40C (3) Tamb=40C Fig 4. DC current gain as a function of collector Fig 5. Collector-emitter saturation voltage as a current; typical values function of collector current; typical values 006aac770 006aac771 10 10 VI(on) VI(off) (V) (V) (1) (1) (2) (2) 1 1 (3) (3) 10-1 10-1 10-1 1 10 102 10-1 1 10 IC (mA) IC (mA) V =0.3V V =5V CE CE (1) Tamb=40C (1) Tamb=40C (2) Tamb=25C (2) Tamb=25C (3) Tamb=100C (3) Tamb=100C Fig 6. On-state input voltage as a function of Fig 7. Off-state input voltage as a function of collector current; typical values collector current; typical values PEMH11_PUMH11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 29 November 2011 7 of 14

PEMH11; PUMH11 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k 3 006aac772 103 006aac757 Cc (pF) fT (MHz) 2 102 1 0 10 0 10 20 30 40 50 10-1 1 10 102 VCB (V) IC (mA) f=1MHz; Tamb=25C VCE=5V; Tamb=25C Fig 8. Collector capacitance as a function of Fig 9. Transition frequency as a function of collector collector-base voltage; typical values current; typical values of built-in transistor 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 1.7 0.6 2.2 1.1 1.5 0.5 1.8 0.8 6 5 4 6 5 4 0.45 0.15 0.3 0.1 1.7 1.3 2.2 1.35 1.5 1.1 2.0 1.15 pin 1 pin 1 index index 1 2 3 1 2 3 0.5 00..2177 00..1088 0.65 00..32 00..2150 1 1.3 Dimensions in mm 04-11-08 Dimensions in mm 06-03-16 Fig 10. Package outline PEMH11(SOT666) Fig 11. Package outline PUMH11(SOT363/SC-88) PEMH11_PUMH11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 29 November 2011 8 of 14

PEMH11; PUMH11 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 4000 8000 10000 PEMH11 SOT666 2mm pitch, 8mm tape and reel - - -315 - 4mm pitch, 8mm tape and reel - -115 - - PUMH11 SOT363 4mm pitch, 8mm tape and reel; T1 [2] -115 - - -135 4mm pitch, 8mm tape and reel; T2 [3] -125 - - -165 [1] For further information and the availability of packing methods, see Section14. [2] T1: normal taping [3] T2: reverse taping 11. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 0.3 0.538 (2×) (2×) placement area 0.55 2 1.7 1.075 (2×) solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 0.6 (4×) (2×) 0.5 0.65 (4×) (2×) sot666_fr Reflow soldering is the only recommended soldering method. Fig 12. Reflow soldering footprint PEMH11(SOT666) PEMH11_PUMH11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 29 November 2011 9 of 14

PEMH11; PUMH11 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k 2.65 solder lands 2.35 1.5 0.6 0.5 0.4 (2×) (4×) (4×) solder resist solder paste 0.5 0.6 occupied area (4×) (2×) 0.6 Dimensions in mm (4×) 1.8 sot363_fr Fig 13. Reflow soldering footprint PUMH11(SOT363/SC-88) 1.5 solder lands 4.5 0.3 2.5 solder resist occupied area 1.5 Dimensions in mm preferred transport 1.3 1.3 direction during soldering 2.45 5.3 sot363_fw Fig 14. Wave soldering footprint PUMH11(SOT363/SC-88) PEMH11_PUMH11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 29 November 2011 10 of 14

PEMH11; PUMH11 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PEMH11_PUMH11v.6 20111129 Product data sheet - PEMH11_PUMH11v.5 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Section 1 “Product profile”: updated • Section 4 “Marking”: updated • Table 7 “Thermal characteristics”: updated according to the latest measurements • Table 8 “Characteristics”: I updated according to the latest measurements, V and CEO i(on) V changed respectively to V and V , f added i(off) I(on) I(off) T • Figure1 to 9: added • Section 8 “Test information”: added • Figure10 and 11: replaced by minimized package outline drawings • Section 10 “Packing information”: added • Section 11 “Soldering”: added • Section 13 “Legal information”: updated PEMH11_PUMH11v.5 20031020 Product data sheet - PUMH11v.4 PEMH11v.1 PUMH11v.4 19990413 Product specification - - PEMH11v.1 20011022 Preliminary specification - - PEMH11_PUMH11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 29 November 2011 11 of 14

PEMH11; PUMH11 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 13.2 Definitions malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of Draft — The document is a draft version only. The content is still under NXP Semiconductors products in such equipment or applications and internal review and subject to formal approval, which may result in therefore such inclusion and/or use is at the customer’s own risk. modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of Applications — Applications that are described herein for any of these information included herein and shall have no liability for the consequences of products are for illustrative purposes only. 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In case of any inconsistency or conflict with the short data sheet, the Semiconductors product is suitable and fit for the customer’s applications and full data sheet shall prevail. products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate Product specification — The information and data provided in a Product design and operating safeguards to minimize the risks associated with their data sheet shall define the specification of the product as agreed between applications and products. NXP Semiconductors and its customer, unless NXP Semiconductors and NXP Semiconductors does not accept any liability related to any default, customer have explicitly agreed otherwise in writing. In no event however, damage, costs or problem which is based on any weakness or default in the shall an agreement be valid in which the NXP Semiconductors product is customer’s applications or products, or the application or use by customer’s deemed to offer functions and qualities beyond those described in the third party customer(s). Customer is responsible for doing all necessary Product data sheet. testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and 13.3 Disclaimers the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limited warranty and liability — Information in this document is believed to Limiting values — Stress above one or more limiting values (as defined in be accurate and reliable. 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This document supersedes and replaces all information supplied prior conveyance or implication of any license under any copyrights, patents or to the publication hereof. other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, Export control — This document as well as the item(s) described herein authorized or warranted to be suitable for use in life support, life-critical or may be subject to export control regulations. Export might require a prior safety-critical systems or equipment, nor in applications where failure or authorization from competent authorities. PEMH11_PUMH11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 29 November 2011 12 of 14

PEMH11; PUMH11 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k Quick reference data — The Quick reference data is an extract of the 13.4 Trademarks product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PEMH11_PUMH11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 29 November 2011 13 of 14

PEMH11; PUMH11 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k 15. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . 8 10 Packing information . . . . . . . . . . . . . . . . . . . . . 9 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14 Contact information. . . . . . . . . . . . . . . . . . . . . 13 15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 29 November 2011 Document identifier: PEMH11_PUMH11