PSMNR90-30BL N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses • Suitable for logic level gate drive sources 3. Applications • DC-to-DC converters • Load switiching • Motor control • Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥ 25 °C; T ≤ 175 °C - - 30 V DS j j ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 [1] - - 120 A P total power dissipation T = 25 °C; Fig. 1 - - 306 W tot mb T junction temperature -55 - 175 °C j Static characteristics R drain-source on-state V = 10 V; I = 25 A; T = 25 °C; - 0.89 1 mΩ DSon GS D j resistance Fig. 12 V = 10 V; I = 25 A; T = 100 °C; - 1.19 1.5 mΩ GS D j Fig. 13; Fig. 12 Dynamic characteristics Q gate-drain charge V = 4.5 V; I = 75 A; V = 15 V; - 37 - nC GD GS D DS Fig. 14; Fig. 15 Q total gate charge - 118 - nC G(tot)

Nexperia PSMNR90-30BL N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- V = 10 V; T = 25 °C; I = 120 A; - - 1.9 J DS(AL)S GS j(init) D source avalanche V ≤ 30 V; R = 50 Ω; unclamped sup GS energy [1] Continuous current is limited by package. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain[1] G 3 S source mb D mounting base; connected to mbb076 S 2 drain 1 3 D2PAK (SOT404) [1] It is not possible to make connection to pin 2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMNR90-30BL D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code PSMNR90-30BL PSMNR90-30BL 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥ 25 °C; T ≤ 175 °C - 30 V DS j j V drain-gate voltage T ≥ 25 °C; T ≤ 175 °C; R = 20 kΩ - 30 V DGR j j GS PSMNR90-30BL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 2 April 2014 2 / 13

Nexperia PSMNR90-30BL N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK Symbol Parameter Conditions Min Max Unit V gate-source voltage -20 20 V GS P total power dissipation T = 25 °C; Fig. 1 - 306 W tot mb ID drain current VGS = 10 V; Tmb = 100 °C; Fig. 2 [1] - 120 A VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - 120 A I peak drain current pulsed; t ≤ 10 µs; T = 25 °C; Fig. 3 - 1573 A DM p mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j T peak soldering temperature - 260 °C sld(M) Source-drain diode IS source current Tmb = 25 °C [1] - 120 A I peak source current pulsed; t ≤ 10 µs; T = 25 °C - 1573 A SM p mb Avalanche ruggedness E non-repetitive drain-source V = 10 V; T = 25 °C; I = 120 A; - 1.9 J DS(AL)S GS j(init) D avalanche energy V ≤ 30 V; R = 50 Ω; unclamped sup GS [1] Continuous current is limited by package. 03aa16 003aaf774 120 500 ID Pder (A) (%) 400 80 300 200 40 (1) 100 0 0 0 50 100 150 200 0 50 100 150 200 Tmb(°C) Tmb(C) Fig. 1. Normalized total power dissipation as a Fig. 2. Continuous drain current as a function of function of mounting base temperature mounting base temperature. PSMNR90-30BL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 2 April 2014 3 / 13

Nexperia PSMNR90-30BL N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK 003aaf773 104 ID (A) 103 LimitRDSon=VDS/ID tp=10ms 100ms 102 1ms DC 10 10ms 100ms 1 10-1 10-1 1 10 102 VDS(V) Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance Fig. 4 - 0.22 0.49 K/W th(j-mb) from junction to mounting base R thermal resistance minimum footprint; mounted on a - 50 - K/W th(j-a) from junction to printed-circuit board ambient 003aaf772 1 Z th(j-mb) (K/W) δ=0.5 10-1 0.2 0.1 0.05 10-2 0.02 P δ= tp T singleshot tp t T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 t (s) 1 p Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMNR90-30BL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 2 April 2014 4 / 13

Nexperia PSMNR90-30BL N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I = 250 µA; V = 0 V; T = 25 °C 30 - - V (BR)DSS D GS j breakdown voltage I = 250 µA; V = 0 V; T = -55 °C 27 - - V D GS j V gate-source threshold I = 1 mA; V = V ; T = 25 °C; 1.3 1.7 2.2 V GS(th) D DS GS j voltage Fig. 10; Fig. 11 I = 1 mA; V = V ; T = 175 °C; 0.65 - - V D DS GS j Fig. 11 I = 1 mA; V = V ; T = -55 °C; - - 2.5 V D DS GS j Fig. 11 I drain leakage current V = 30 V; V = 0 V; T = 25 °C - 0.02 10 µA DSS DS GS j V = 30 V; V = 0 V; T = 175 °C - - 500 µA DS GS j I gate leakage current V = 16 V; V = 0 V; T = 25 °C - 10 100 nA GSS GS DS j V = -16 V; V = 0 V; T = 25 °C - 10 100 nA GS DS j R drain-source on-state V = 10 V; I = 25 A; T = 25 °C; - 0.89 1 mΩ DSon GS D j resistance Fig. 12 V = 4.5 V; I = 25 A; T = 25 °C; - 1.1 1.4 mΩ GS D j Fig. 12 V = 10 V; I = 25 A; T = 175 °C; - 1.65 2 mΩ GS D j Fig. 13; Fig. 12 V = 10 V; I = 25 A; T = 100 °C; - 1.19 1.5 mΩ GS D j Fig. 13; Fig. 12 R gate resistance f = 1 MHz - 1.1 - Ω G Dynamic characteristics Q total gate charge I = 75 A; V = 15 V; V = 10 V; - 243 - nC G(tot) D DS GS Fig. 14; Fig. 15 I = 0 A; V = 0 V; V = 10 V - 222 - nC D DS GS I = 75 A; V = 15 V; V = 4.5 V; - 118 - nC D DS GS Fig. 14; Fig. 15 Q gate-source charge - 39 - nC GS Q pre-threshold gate- - 22 - nC GS(th) source charge Q post-threshold gate- - 17 - nC GS(th-pl) source charge Q gate-drain charge - 37 - nC GD V gate-source plateau I = 75 A; V = 15 V; Fig. 14; Fig. 15 - 2.8 - V GS(pl) D DS voltage PSMNR90-30BL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 2 April 2014 5 / 13

Nexperia PSMNR90-30BL N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit C input capacitance V = 15 V; V = 0 V; f = 1 MHz; - 14850 - pF iss DS GS T = 25 °C; Fig. 16 C output capacitance j - 2799 - pF oss C reverse transfer - 1215 - pF rss capacitance t turn-on delay time V = 15 V; R = 0.2 Ω; V = 5 V; - 95 - ns d(on) DS L GS R = 5 Ω; I = 75 A; T = 25 °C G(ext) D j t rise time V = 15 V; R = 0.2 Ω; V = 5 V; - 213 - ns r DS L GS R = 5 Ω; T = 25 °C; I = 75 A G(ext) j D t turn-off delay time V = 15 V; R = 0.2 Ω; V = 5 V; - 199 - ns d(off) DS L GS R = 5 Ω; I = 75 A; T = 25 °C t fall time G(ext) D j - 115 - ns f Source-drain diode V source-drain voltage I = 25 A; V = 0 V; T = 25 °C; Fig. 17 - 0.8 1.2 V SD S GS j t reverse recovery time I = 25 A; dI /dt = -100 A/µs; V = 0 V; - 67 - ns rr S S GS V = 15 V Q recovered charge DS - 123 - nC r 300 003aaf762 105 003aaf766 g fs (S) C 240 (pF) C iss 180 C rss 104 120 60 0 103 0 20 40 60 ID(A) 80 10-1 1 10 VGS(V) 102 Fig. 5. Forward transconductance as a function of Fig. 6. Input and reverse transfer capacitances as a drain current; typical values function of gate-source voltage; typical values PSMNR90-30BL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 2 April 2014 6 / 13

Nexperia PSMNR90-30BL N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK 003aaf764 003aaf763 5 75 R I DSon D (mΩ) (A) 4 60 3 45 2 30 1 15 Tj=175°C Tj=25°C 0 0 0 4 8 12 16 0 0.6 1.2 1.8 2.4 3 VGS(V) VGS(V) Fig. 7. Drain-source on-state resistance as a function Fig. 8. Transfer characteristics: drain current as a of gate-source voltage; typical values function of gate-source voltage; typical values 300 003aad011 10-1 003aab271 10 (IAD) 4.5 3 ID (A) 250 3.5 10-2 200 min typ max 2.8 10-3 150 10-4 100 2.6 10-5 50 VGS(V)=2.4 0 10-6 0 2 4 6 8 10 0 1 2 VGS(V) 3 VDS(V) Fig. 9. Output characteristics: drain current as a Fig. 10. Sub-threshold drain current as a function of function of drain-source voltage; typical values gate-source voltage PSMNR90-30BL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 2 April 2014 7 / 13

Nexperia PSMNR90-30BL N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK 003aac982 003aag668 3 10 RDSon 2.6 2.8 VGS(V)=3 (mΩ) VGS(th) 8 (V) max 2 typ 6 min 4 1 4.5 3.5 2 10 0 0 -60 0 60 120 180 0 100 200 ID(A) 300 Tj(°C) Fig. 11. Gate-source threshold voltage as a function of Fig. 12. Drain-source on-state resistance as a function junction temperature of drain current; typical values 003aaf767 2 VDS a ID 1.5 VGS(pl) 1 VGS(th) VGS QGS1 QGS2 0.5 QGS QGD QG(tot) 003aaa508 0 Fig. 14. Gate charge waveform definitions -60 0 60 120 180 Tj(C) Fig. 13. Normalized drain-source on-state resistance factor as a function of junction temperature PSMNR90-30BL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 2 April 2014 8 / 13

Nexperia PSMNR90-30BL N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK 10 003aaf768 105 003aaf769 V GS (V) C 8 (pF) 24V C iss 104 15V 6 V =6V DS C oss 4 103 Crss 2 0 102 0 100 200 QG(nC) 300 10-1 1 10 VDS(V) 102 Fig. 15. Gate-source voltage as a function of gate Fig. 16. Input, output and reverse transfer capacitances charge; typical values as a function of drain-source voltage; typical values 003aaf770 75 I S (A) 60 45 30 Tj=175°C Tj=25°C 15 0 0 0.2 0.4 0.6 0.8 1 V (V) SD Fig. 17. Source current as a function of source-drain voltage; typical values PSMNR90-30BL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 2 April 2014 9 / 13

Nexperia PSMNR90-30BL N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK 11. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 A E A1 D1 mounting base D HD 2 Lp 1 3 b2 b c e e Q 0 5 mm scale Dimensions (mm are the original dimensions) Unit A A1 b b2 c D D1 E e HD Lp Q max 4.5 1.40 0.85 1.45 0.64 11 1.6 10.3 15.8 2.9 2.6 mm nom 2.54 min 4.1 1.27 0.60 1.05 0.46 1.2 9.7 14.8 2.1 2.2 sot404_po Outline References European Issue date version IEC JEDEC JEITA projection 06-03-16 SOT404 13-02-25 Fig. 18. Package outline D2PAK (SOT404) PSMNR90-30BL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 2 April 2014 10 / 13

Nexperia PSMNR90-30BL N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - 12. 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Nexperia PSMNR90-30BL N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK 13. Contents 1 General description ...............................................1 2 Features and benefits ............................................1 3 Applications ...........................................................1 4 Quick reference data .............................................1 5 Pinning information ...............................................2 6 Ordering information .............................................2 7 Marking ...................................................................2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics .......................................................5 11 Package outline ...................................................10 12 Legal information .................................................11 12.1 Data sheet status ...............................................11 12.2 Definitions ...........................................................11 12.3 Disclaimers .........................................................11 12.4 Trademarks ........................................................12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 02 April 2014 PSMNR90-30BL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 2 April 2014 13 / 13