PSMN9R8-30MLC N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 — 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Low parasitic inductance and  Ultra low QG, QGD, & QOSS for high resistance system efficiencies at low and high loads  Optimised for 4.5V Gate drive utilising NextPower Superjunction technology 1.3 Applications  DC-to-DC converters  Synchronous buck regulator  Load switching 1.4 Quick reference data Table 1. Quick refere nce data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 °C - - 30 V DS j I drain current T =25°C; V =10V; see Figure 1 - - 50 A D mb GS P total power dissipation T =25°C; see Figure 2 - - 45 W tot mb T junction temperature -55 - 175 °C j Static characteristics R drain-source on-state V =4.5V; I =15A; T =25°C; - 10.65 12.4 mΩ DSon GS D j resistance see Figure 10 V =10V; I =15A; T =25°C; - 8.5 9.8 mΩ GS D j see Figure 10 Dynamic characteristics Q gate-drain charge V =4.5V; I =15A; V =15V; - 1.5 - nC GD GS D DS see Figure 12; see Figure 13 Q total gate charge V =4.5V; I =15A; V =15V; - 5 - nC G(tot) GS D DS see Figure 12; see Figure 13

PSMN9R8-30MLC Nexperia N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source 3 S source G 4 G gate mb D mounting base; connected to mbb076 S drain 1 2 3 4 SOT1210 (LFPAK33) 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version PSMN9R8-30MLC LFPAK33 Plastic single ended surface mounted package (LFPAK33); SOT1210 4 leads 4. Limiting values Table 4. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 °C - 30 V DS j V gate-source voltage -20 20 V GS I drain current V =10V; T =25°C; see Figure 1 - 50 A D GS mb V =10V; T =100°C; see Figure 1 - 36 A GS mb I peak drain current pulsed; t ≤10µs; T =25°C; see Figure 4 - 202 A DM p mb P total power dissipation T =25°C; see Figure 2 - 45 W tot mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j T peak soldering temperature - 260 °C sld(M) V electrostatic discharge voltage MM (JEDEC JESD22-A115) 140 - V ESD Source-drain diode I source current T =25°C - 41 A S mb I peak source current pulsed; t ≤10µs; T =25°C - 202 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V; T =25°C; I =50A; - 8 mJ DS(AL)S GS j(init) D avalanche energy V ≤30V; R =50Ω; unclamped; sup GS see Figure 3 PSMN9R8-30MLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 15 June 2012 2 of 14

PSMN9R8-30MLC Nexperia N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 003aaj426 03na19 60 120 I (AD) Pder (%) 40 80 20 40 0 0 0 50 100 150 Tmb 200 0 50 100 150 200 (°C) Tmb (°C) Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a mounting base temperature function of mounting base temperature 102 003aaj427 I AL (A) 10 (1) (2) 1 10-1 10-3 10-2 10-1 1 tAL 10 (ms) Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time PSMN9R8-30MLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 15 June 2012 3 of 14

PSMN9R8-30MLC Nexperia N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 103 003aaj428 I D (A) Limit R = V / I DSon DS D 102 t =10 μs p 100 μs 10 DC 1 ms 1 10 ms 100 ms 10-1 10-1 1 10 102 V (V) DS Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from see Figure 5 - 3.1 3.32 K/W th(j-mb) junction to mounting base 003aaj429 10 Z th(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 0.02 P δ = Ttp single shot tp t T 10-2 10-6 10-5 10-4 10-3 10-2 10-1 t (s) 1 p Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN9R8-30MLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 15 June 2012 4 of 14

PSMN9R8-30MLC Nexperia N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 6. Characteristics Table 6. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I =250µA; V =0V; T =25°C 30 - - V (BR)DSS D GS j breakdown voltage I =250µA; V =0V; T =-55°C 27 - - V D GS j V gate-source threshold I =1mA; V =V ; T =25°C 1.3 1.64 1.95 V GS(th) D DS GS j voltage ∆V /∆T gate-source threshold - -4 - mV/K GS(th) voltage variation with temperature I drain leakage current V =30V; V =0V; T =25°C - - 1 µA DSS DS GS j V =30V; V =0V; T =150°C - - 100 µA DS GS j I gate leakage current V =16V; V =0V; T =25°C - - 100 nA GSS GS DS j V =-16V; V =0V; T =25°C - - 100 nA GS DS j R drain-source on-state V =4.5V; I =15A; T =25°C; - 10.65 12.4 mΩ DSon GS D j resistance see Figure 10 V =4.5V; I =15A; T =150°C; - - 21.1 mΩ GS D j see Figure 11; see Figure 10 V =10V; I =15A; T =25°C; - 8.5 9.8 mΩ GS D j see Figure 10 V =10V; I =15A; T =150°C; - - 16.75 mΩ GS D j see Figure 11; see Figure 10 R gate resistance f=1MHz 0.9 1.8 3.6 Ω G Dynamic characteristics Q total gate charge I =15A; V =15V; V =10V; - 10.9 - nC G(tot) D DS GS see Figure 12; see Figure 13 I =15A; V =15V; V =4.5V; - 5 - nC D DS GS see Figure 12; see Figure 13 I =0A; V =0V; V =10V - 10 - nC D DS GS Q gate-source charge I =15A; V =15V; V =4.5V; - 2 - nC GS D DS GS see Figure 12; see Figure 13 Q pre-threshold - 1.2 - nC GS(th) gate-source charge Q post-threshold - 0.8 - nC GS(th-pl) gate-source charge Q gate-drain charge - 1.5 - nC GD V gate-source plateau I =15A; V =15V; - 3.1 - V GS(pl) D DS voltage see Figure 12; see Figure 13 C input capacitance V =15V; V =0V; f=1MHz; - 690 - pF iss DS GS T =25°C; see Figure 14 C output capacitance j - 170 - pF oss C reverse transfer - 52 - pF rss capacitance PSMN9R8-30MLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 15 June 2012 5 of 14

PSMN9R8-30MLC Nexperia N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit t turn-on delay time V =15V; R =1Ω; V =4.5V; - 7.4 - ns d(on) DS L GS R =5Ω t rise time G(ext) - 7.7 - ns r t turn-off delay time - 11.7 - ns d(off) t fall time - 5.3 - ns f Q output charge V =0V; V =15V; f=1MHz; - 4.9 - nC oss GS DS T =25°C j Source-drain diode V source-drain voltage I =15A; V =0V; T =25°C; - 0.84 1.1 V SD S GS j see Figure 15 t reverse recovery time I =15A; dI /dt=-100A/µs; V =0V; - 12.9 - ns rr S S GS V =15V Q recovered charge DS - 5.3 - nC r t reverse recovery rise V =0V; I =15A; dI /dt=-100A/µs; - 7.9 - ns a GS S S time V =15V; see Figure 16 DS t reverse recovery fall - 5 - ns b time 003aaj430 003aaj431 50 30 ID 10 4.5 3.5 (A) R DSon 40 (mΩ) 20 30 3 20 2.8 10 2.6 10 V (V) = 2.4 GS 2.2 0 0 0 1 2 3 4 0 4 8 12 16 V (V) V (V) DS GS Fig 6. Output characteristics; drain current as a Fig 7. Drain-source on-state resistance as a function function of drain-source voltage; typical values of gate-source voltage; typical values PSMN9R8-30MLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 15 June 2012 6 of 14

PSMN9R8-30MLC Nexperia N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 60 003aaj432 50 003aaj433 I D gfs (A) (S) 40 40 30 20 20 10 T = 150 °C j T = 25 °C j 0 0 0 10 20 30 40 50 0 1 2 3 4 ID (A) VGS (V) Fig 8. Forward transconductance as a function of Fig 9. Transfer characteristics; drain current as a drain current; typical values function of gate-source voltage; typical values 003aaj436 003aaj437 50 2 2.8 3 R DSon (mΩ) a 10V 40 1.5 V =4.5V GS 30 3.5 1 20 4.5 0.5 10 V (V) = 10 GS 0 0 5 15 25 35 45 55 -60 0 60 120 180 ID (A) Tj (°C) Fig 10. Drain-source on-state resistance as a function Fig 11. Normalized drain-source on-state resistance of drain current; typical values factor as a function of junction temperature PSMN9R8-30MLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 15 June 2012 7 of 14

PSMN9R8-30MLC Nexperia N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 003aaj438 10 V GS (V) VDS 8 ID 6 V 6 24 V VGS(pl) VGS(th) 4 V = 15 V DS VGS QGS1 QGS2 2 QGS QGD QG(tot) 0 003aaa508 0 5 10 15 Q (nC) G Fig 12. Gate charge waveform definitions Fig 13. Gate-source voltage as a function of gate charge; typical values 103 003aaj439 50 003aaj440 I C Ciss (AS) (pF) 40 Coss 30 102 C 20 rss T = 150°C j 10 T = 25 °C 10 0 j 10-1 1 10 102 0 0.3 0.6 0.9 1.2 VDS (V) VSD (V) Fig 14. Input, output and reverse transfer capacitances Fig 15. Source current as a function of source-drain as a function of drain-source voltage; typical voltage; typical values values PSMN9R8-30MLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 15 June 2012 8 of 14

PSMN9R8-30MLC Nexperia N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 003aaf 444 ID (A) trr ta tb 0 0.25 IRM IRM t (s) Fig 16. Reverse recovery timing definition PSMN9R8-30MLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 15 June 2012 9 of 14

PSMN9R8-30MLC Nexperia N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 7. Package outline Plastic single ended surface mounted package (LFPAK33); 8 leads SOT1210 E A A e1 L b1 c1 E1 mounting base D1 D H 1 4 e X b w A A1 C c θ Lp y C detail X 0 2.5 5 mm scale Dimensions Unit(1) A A1 b b1 c c1 D(1) D1 E(1) E1 e e1 H L Lp w y θ max 0.90 0.10 0.35 0.35 0.20 0.30 2.70 2.35 3.40 2.45 3.40 0.25 0.50 8° mm nom 0.65 0.65 0.20 0.10 min 0.80 0.00 0.25 0.25 0.10 0.20 2.50 1.90 3.20 2.00 3.20 0.13 0.30 0° Note 1. Plastic or metal protrusions of 0.15 mm per side are not included. sot1210_po Outline References European Issue date version IEC JEDEC JEITA projection 11-12-19 SOT1210 12-03-12 Fig 17. Package outline SOT1210 (LFPAK33) PSMN9R8-30MLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 15 June 2012 10 of 14

PSMN9R8-30MLC Nexperia N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 8. Revision history Table 7. Revision his tory Document ID Release date Data sheet status Change notice Supersedes PSMN9R8-30MLC v.3 20120615 Product data sheet - PSMN9R8-30MLC v.2 Modifications: • Status changed from objective to product. • Various changes to content. PSMN9R8-30MLC v.2 20120607 Objective data sheet - PSMN9R8-30MLC v.1 PSMN9R8-30MLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 15 June 2012 11 of 14

PSMN9R8-30MLC Nexperia N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 9. Legal information 9.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without Preview — The document is a preview version only. The document is still limitation specifications and product descriptions, at any time and without subject to formal approval, which may result in modifications or additions. notice. This document supersedes and replaces all information supplied prior Nexperia does not give any representations or warranties as to to the publication hereof. the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or Draft — The document is a draft version only. The content is still under safety-critical systems or equipment, nor in applications where failure or internal review and subject to formal approval, which may result in malfunction of a Nexperia product can reasonably be expected modifications or additions. Nexperia does not give any to result in personal injury, death or severe property or environmental representations or warranties as to the accuracy or completeness of damage. Nexperia and its suppliers accept no liability for information included herein and shall have no liability for the consequences of inclusion and/or use of Nexperia products in such equipment or use of such information. applications and therefore such inclusion and/or use is at the customer’s own risk. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. 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Nexperia makes no representation or warranty that such applications will be suitable for the Product specification — The information and data provided in a Product specified use without further testing or modification. data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and Customers are responsible for the design and operation of their applications customer have explicitly agreed otherwise in writing. In no event however, and products using Nexperia products, and Nexperia shall an agreement be valid in which the Nexperia product is accepts no liability for any assistance with applications or customer product deemed to offer functions and qualities beyond those described in the design. It is customer’s sole responsibility to determine whether the Nexperia Product data sheet. product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate 9.3 Disclaimers design and operating safeguards to minimize the risks associated with their applications and products. Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any Nexperia does not accept any liability related to any default, representations or warranties, expressed or implied, as to the accuracy or damage, costs or problem which is based on any weakness or default in the completeness of such information and shall have no liability for the customer’s applications or products, or the application or use by customer’s consequences of use of such information. Nexperia takes no third party customer(s). Customer is responsible for doing all necessary responsibility for the content in this document if provided by an information testing for the customer’s applications and products using Nexperia source outside of Nexperia. products in order to avoid a default of the applications and the products or of the application or use by customer’s third party In no event shall Nexperia be liable for any indirect, incidental, customer(s). Nexperia does not accept any liability in this respect. punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or Limiting values — Stress above one or more limiting values (as defined in replacement of any products or rework charges) whether or not such the Absolute Maximum Ratings System of IEC 60134) will cause permanent damages are based on tort (including negligence), warranty, breach of damage to the device. Limiting values are stress ratings only and (proper) contract or any other legal theory. operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Notwithstanding any damages that customer might incur for any reason Characteristics sections of this document is not warranted. Constant or whatsoever, Nexperia’s aggregate and cumulative liability towards repeated exposure to limiting values will permanently and irreversibly affect customer for the products described herein shall be limited in accordance the quality and reliability of the device. with theTerms and conditions of commercial sale of Nexperia. PSMN9R8-30MLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 15 June 2012 12 of 14

PSMN9R8-30MLC Nexperia N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Terms and conditions of commercial sale — Nexperia product for such automotive applications, use and specifications, and (b) products are sold subject to the general terms and conditions of commercial whenever customer uses the product for automotive applications beyond sale, as published at http://www.nexperia.com/profile/terms, unless otherwise Nexperia’s specifications such use shall be solely at customer’s agreed in a valid written individual agreement. In case an individual own risk, and (c) customer fully indemnifies Nexperia for any agreement is concluded only the terms and conditions of the respective liability, damages or failed product claims resulting from customer design and agreement shall apply. Nexperia hereby expressly objects to use of the product for automotive applications beyond Nexperia’s applying the customer’s general terms and conditions with regard to the standard warranty and Nexperia’s product specifications. purchase of Nexperia products by customer. Translations — A non-English (translated) version of a document is for No offer to sell or license — Nothing in this document may be interpreted or reference only. The English version shall prevail in case of any discrepancy construed as an offer to sell products that is open for acceptance or the grant, between the translated and English versions. conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior Notice: All referenced brands, product names, service names and trademarks authorization from competent authorities. are the property of their respective owners. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the 10. Contact information For more information, please visit:http://www.nexperia.com For sales office addresses, please send an email to:salesaddresses@nexperia.com PSMN9R8-30MLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 15 June 2012 13 of 14

PSMN9R8-30MLC Nexperia N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 11. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline. . . . . . . . . . . . . . . . . . . . . . . . .10 8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 10 Contact information. . . . . . . . . . . . . . . . . . . . . .13 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 15 June 2012