PSMN9R5-100BS N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK Rev. 2 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching  Suitable for standard level gate drive and conduction losses 1.3 Applications  DC-to-DC converters  Motor control  Load switching  Server power supplies 1.4 Quick reference data Table 1. Quick refere nce data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥25°C; T ≤175°C - - 100 V DS j j I drain current T =25°C; V =10V; see Figure 1 - - 89 A D mb GS P total power dissipation T =25°C; see Figure 2 - - 211 W tot mb T junction temperature -55 - 175 °C j Static characteristics R drain-source on-state V =10V; I =15A; T =25°C; - 8.16 9.6 mΩ DSon GS D j resistance see Figure 13 Dynamic characteristics Q gate-drain charge V =10V; I =60A; V =50V; - 23 - nC GD GS D DS see Figure 14;see Figure 15 Q total gate charge - 82 - nC G(tot) Avalanche ruggedness E non-repetitive V =10V; T =25°C; I =89A; - - 177 mJ DS(AL)S GS j(init) D drain-source V ≤100V; unclamped; R =50Ω sup GS avalanche energy

PSMN9R5-100BS Nexperia N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain[1] 3 S source G mb D mounting base; connected to drain mbb076 S 2 1 3 SOT404 (D2PAK) [1] It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version PSMN9R5-100BS D2PAK plastic single-ended surface-mounted package (D2PAK); SOT404 3 leads (one lead cropped) 4. Limiting values Table 4. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥25°C; T ≤175°C - 100 V DS j j V drain-gate voltage T ≤175°C; T ≥25°C; R =20kΩ - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V; T =100°C; see Figure 1 - 63 A D GS mb V =10V; T =25°C; see Figure 1 - 89 A GS mb I peak drain current pulsed; t ≤10µs; T =25°C; - 355 A DM p mb see Figure 3 P total power dissipation T =25°C; see Figure 2 - 211 W tot mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j T peak soldering temperature - 260 °C sld(M) Source-drain diode I source current T =25°C - 89 A S mb I peak source current pulsed; t ≤10µs; T =25°C - 355 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V; T =25°C; I =89A; - 177 mJ DS(AL)S GS j(init) D avalanche energy V ≤100V; unclamped; R =50Ω sup GS PSMN9R5-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 March 2012 2 of 14

PSMN9R5-100BS Nexperia N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK 003aae016 03aa16 100 120 I D (A) Pder 80 (%) 80 60 40 40 20 0 0 0 50 100 150 200 0 50 100 150 200 Tmb (°C) Tmb (°C) Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a mounting base temperature function of mounting base temperature 103 003aae017 ID (A) Limit RDSon = VDS / ID 102 tp = 10 μs 100 μs 10 DC 1 1 ms 10 ms 100 ms 10−1 1 10 102 103 VDS (V) Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN9R5-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 March 2012 3 of 14

PSMN9R5-100BS Nexperia N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK 5. Thermal characteristics Table 5. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from junction see Figure 4 - 0.38 0.71 K/W th(j-mb) to mounting base R thermal resistance from junction Minimum footprint; mounted on a - 50 - K/W th(j-a) to ambient printed circuit board 003aad142 1 Zth(j-mb) (K/W) δ = 0.5 10−1 0.2 0.1 0.05 10−2 0.02 single shot P δ = tp T 10−3 tp t T 10−4 10−6 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN9R5-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 March 2012 4 of 14

PSMN9R5-100BS Nexperia N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK 6. Characteristics Table 6. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I =0.25mA; V =0V; T =-55°C 90 - - V (BR)DSS D GS j breakdown voltage I =0.25mA; V =0V; T =25°C 100 - - V D GS j V gate-source threshold I =1mA; V =V ; T =175°C; 1 - - V GS(th) D DS GS j voltage see Figure 10; see Figure 11 I =1mA; V =V ; T =25°C; 2 3 4 V D DS GS j see Figure 10; see Figure 11 I =1mA; V =V ; T =-55°C; - - 4.8 V D DS GS j see Figure 10; see Figure 11 I drain leakage current V =100V; V =0V; T =125°C - - 100 µA DSS DS GS j V =100V; V =0V; T =25°C - 0.02 4 µA DS GS j I gate leakage current V =20V; V =0V; T =25°C - 10 100 nA GSS GS DS j V =-20V; V =0V; T =25°C - 10 100 nA GS DS j R drain-source on-state V =10V; I =15A; T =100°C; - - 17.3 mΩ DSon GS D j resistance see Figure 12 V =10V; I =15A; T =175°C; - 23.5 27.4 mΩ GS D j see Figure 12 V =10V; I =15A; T =25°C; - 8.16 9.6 mΩ GS D j see Figure 13 R internal gate resistance f=1MHz - 0.7 - Ω G (AC) Dynamic characteristics Q total gate charge I =0A; V =0V; V =10V; - 67 - nC G(tot) D DS GS see Figure 14 I =60A; V =50V; V =10V; - 82 - nC D DS GS see Figure 14; see Figure 15 Q gate-source charge - 21 - nC GS Q pre-threshold I =60A; V =50V; V =3V; - 13.1 - nC GS(th) D DS GS gate-source charge see Figure 14 Q post-threshold I =60A; V =50V; V =10V; - 7.8 - nC GS(th-pl) D DS GS gate-source charge see Figure 14 Q gate-drain charge I =60A; V =50V; V =10V; - 23 - nC GD D DS GS see Figure 14; see Figure 15 V gate-source plateau V =50V; see Figure 14; - 4.5 - V GS(pl) DS voltage see Figure 15 C input capacitance V =50V; V =0V; f=1MHz; - 4454 - pF iss DS GS T =25°C; see Figure 16 C output capacitance j - 302 - pF oss C reverse transfer - 185 - pF rss capacitance t turn-on delay time V =50V; R =0.8Ω; V =10V; - 22 - ns d(on) DS L GS R =4.7Ω; T =25°C t rise time G(ext) j - 25.2 - ns r t turn-off delay time - 52.2 - ns d(off) t fall time - 22.8 - ns f PSMN9R5-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 March 2012 5 of 14

PSMN9R5-100BS Nexperia N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Source-drain diode V source-drain voltage I =15A; V =0V; T =25°C; - 0.85 1.2 V SD S GS j see Figure 17 t reverse recovery time I =20A; dI /dt=100A/µs; V =0V; - 61.5 - ns rr S S GS V =50V Q recovered charge DS - 157 - nC r 003aae025 003aae022 30 8000 RDSon C (mΩ) (pF) C iss 24 6000 18 4000 C rss 12 2000 6 0 4 8 12 16 20 0 3 6 9 12 VGS (V) VGS (V) Fig 5. Drain-source on-state resistance as a function Fig 6. Input and reverse transfer capacitances as a of gate-source voltage; typical values function of gate-source voltage; typical values 003aae021 003aae019 150 100 10 5.5 5 I D gfs (A) (S) 75 100 4.8 4.7 50 4.5 50 25 4.3 V (V) = 4 GS 0 0 0 20 40 60 80 0 0.5 1 1.5 2 ID (A) VDS (V) Fig 7. Forward transconductance as a function of Fig 8. Output characteristics: drain current as a drain current; typical values function of drain-source voltage; typical values PSMN9R5-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 March 2012 6 of 14

PSMN9R5-100BS Nexperia N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK 80 003aae020 10−1 03aa35 I ID D (A) (A) 10−2 min typ max 60 10−3 40 10−4 20 10−5 Tj = 175 °C Tj = 25 °C 0 10−6 0 2 4 6 0 2 4 6 VGS (V) VGS (V) Fig 9. Transfer characteristics: drain current as a Fig 10. Sub-threshold drain current as a function of function of gate-source voltage; typical values gate-source voltage 003aad280 003aad774 5 3.2 VGS(th) (V) a 4 max 2.4 3 typ 1.6 2 min 0.8 1 0 0 −60 0 60 120 180 -60 0 60 120 180 Tj (°C) Tj (°C) Fig 11. Gate-source threshold voltage as a function of Fig 12. Normalized drain-source on-state resistance junction temperature factor as a function of junction temperature PSMN9R5-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 March 2012 7 of 14

PSMN9R5-100BS Nexperia N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK 003aae024 40 VGS (V) = 4.5 4.7 4.8 R DSon (mΩ) VDS 30 ID 20 5 VGS(pl) VGS(th) 10 5.5 VGS 10 QGS1 QGS2 QGS QGD 0 QG(tot) 0 25 50 75 100 I (A) 003aaa508 D Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions of drain current; typical values 10 003aae026 104 003aae023 VGS Ciss (V) C (pF) 8 Coss VDS = 20 V 50 V 6 Crss 103 4 2 0 102 0 25 50 75 100 10−2 10−1 1 10 102 QG (nC) VDS (V) Fig 15. Gate-source voltage as a function of gate Fig 16. Input, output and reverse transfer capacitances charge; typical values as a function of drain-source voltage; typical values PSMN9R5-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 March 2012 8 of 14

PSMN9R5-100BS Nexperia N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK 003aae027 100 I S (A) 75 50 25 T = 175 °C T = 25 °C j j 0 0 0.3 0.6 0.9 1.2 V (V) SD Fig 17. Source current as a function of source-drain voltage; typical values PSMN9R5-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 March 2012 9 of 14

PSMN9R5-100BS Nexperia N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK 7. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 A E A1 D1 mounting base D HD 2 Lp 1 3 b c e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) D UNIT A A1 b c max. D1 E e Lp HD Q 4.50 1.40 0.85 0.64 1.60 10.30 2.90 15.80 2.60 mm 11 2.54 4.10 1.27 0.60 0.46 1.20 9.70 2.10 14.80 2.20 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 05-02-11 SOT404 06-03-16 Fig 18. Package outline SOT404 (D2PAK) PSMN9R5-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 March 2012 10 of 14

PSMN9R5-100BS Nexperia N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK 8. Revision history Table 7. Revision his tory Document ID Release date Data sheet status Change notice Supersedes PSMN9R5-100BS v.2 20120302 Product data sheet - PSMN9R5-100BS v.1 Modifications: • Status changed from objective to product. • Various changes to content. PSMN9R5-100BS v.1 20111025 Objective data sheet - - PSMN9R5-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 March 2012 11 of 14

PSMN9R5-100BS Nexperia N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Right to make changes— Nexperia reserves the right to make changes to information published in this document, including without Preview— The document is a preview version only. The document is still limitation specifications and product descriptions, at any time and without subject to formal approval, which may result in modifications or additions. notice. This document supersedes and replaces all information supplied prior Nexperia does not give any representations or warranties as to to the publication hereof. the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Suitability for use— Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or Draft— The document is a draft version only. The content is still under safety-critical systems or equipment, nor in applications where failure or internal review and subject to formal approval, which may result in malfunction of a Nexperia product can reasonably be expected modifications or additions. Nexperia does not give any to result in personal injury, death or severe property or environmental representations or warranties as to the accuracy or completeness of damage. Nexperia and its suppliers accept no liability for information included herein and shall have no liability for the consequences of inclusion and/or use of Nexperia products in such equipment or use of such information. applications and therefore such inclusion and/or use is at the customer’s own risk. Short data sheet— A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for Quick reference data— The Quick reference data is an extract of the quick reference only and should not be relied upon to contain detailed and full product data given in the Limiting values and Characteristics sections of this information. For detailed and full information see the relevant full data sheet, document, and as such is not complete, exhaustive or legally binding. which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data Applications— Applications that are described herein for any of these sheet shall prevail. products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the Product specification— The information and data provided in a Product specified use without further testing or modification. data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and Customers are responsible for the design and operation of their applications customer have explicitly agreed otherwise in writing. In no event however, and products using Nexperia products, and Nexperia shall an agreement be valid in which the Nexperia product is accepts no liability for any assistance with applications or customer product deemed to offer functions and qualities beyond those described in the design. It is customer’s sole responsibility to determine whether the Nexperia Product data sheet. product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate 9.3 Disclaimers design and operating safeguards to minimize the risks associated with their applications and products. Limited warranty and liability— Information in this document is believed to be accurate and reliable. However, Nexperia does not give any Nexperia does not accept any liability related to any default, representations or warranties, expressed or implied, as to the accuracy or damage, costs or problem which is based on any weakness or default in the completeness of such information and shall have no liability for the customer’s applications or products, or the application or use by customer’s consequences of use of such information. Nexperia takes no third party customer(s). Customer is responsible for doing all necessary responsibility for the content in this document if provided by an information testing for the customer’s applications and products using Nexperia source outside of Nexperia. products in order to avoid a default of the applications and the products or of the application or use by customer’s third party In no event shall Nexperia be liable for any indirect, incidental, customer(s). Nexperia does not accept any liability in this respect. punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or Limiting values— Stress above one or more limiting values (as defined in replacement of any products or rework charges) whether or not such the Absolute Maximum Ratings System of IEC 60134) will cause permanent damages are based on tort (including negligence), warranty, breach of damage to the device. Limiting values are stress ratings only and (proper) contract or any other legal theory. operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Notwithstanding any damages that customer might incur for any reason Characteristics sections of this document is not warranted. Constant or whatsoever, Nexperia’s aggregate and cumulative liability towards repeated exposure to limiting values will permanently and irreversibly affect customer for the products described herein shall be limited in accordance the quality and reliability of the device. with theTerms and conditions of commercial saleof Nexperia. PSMN9R5-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 March 2012 12 of 14

PSMN9R5-100BS Nexperia N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK Terms and conditions of commercial sale— Nexperia In the event that customer uses the product for design-in and use in products are sold subject to the general terms and conditions of commercial automotive applications to automotive specifications and standards, customer sale, as published at http://www.nexperia.com/profile/terms, unless otherwise (a) shall use the product without Nexperia’s warranty of the agreed in a valid written individual agreement. In case an individual product for such automotive applications, use and specifications, and (b) agreement is concluded only the terms and conditions of the respective whenever customer uses the product for automotive applications beyond agreement shall apply. Nexperia hereby expressly objects to Nexperia’s specifications such use shall be solely at customer’s applying the customer’s general terms and conditions with regard to the own risk, and (c) customer fully indemnifies Nexperia for any purchase of Nexperia products by customer. liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s No offer to sell or license— Nothing in this document may be interpreted or standard warranty and Nexperia’s product specifications. construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or Translations— A non-English (translated) version of a document is for other industrial or intellectual property rights. reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Export control— This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior 9.4 Trademarks authorization from competent authorities. Non-automotive qualified products— Unless this data sheet expressly Notice: All referenced brands, product names, service names and trademarks states that this specific Nexperia product is automotive qualified, are the property of their respective owners. the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 10. Contact information For more information, please visit:http://www.nexperia.com For sales office addresses, please send an email to:salesaddresses@nexperia.com PSMN9R5-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 March 2012 13 of 14

PSMN9R5-100BS Nexperia N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK 11. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline. . . . . . . . . . . . . . . . . . . . . . . . .10 8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 10 Contact information. . . . . . . . . . . . . . . . . . . . . .13 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 02 March 2012