PSMN8R5-60YS N-channel LFPAK 60 V, 8 mΩ standard level MOSFET 22 July 2015 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • Advanced TrenchMOS provides low RDSon and low gate charge • High efficiency gains in switching power converters • Improved mechanical and thermal characteristics • LFPAK provides maximum power density in a Power SO8 package 3. Applications • DC-to-DC converters • Lithium-ion battery protection • Load switching • Motor control • Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥ 25 °C; T ≤ 175 °C - - 60 V DS j j I drain current T = 25 °C; V = 10 V; Fig. 2 - - 76 A D mb GS P total power dissipation T = 25 °C; Fig. 1 - - 106 W tot mb T junction temperature -55 - 175 °C j Static characteristics R drain-source on-state V = 10 V; I = 15 A; T = 100 °C; - - 12.8 mΩ DSon GS D j resistance Fig. 12 V = 10 V; I = 15 A; T = 25 °C; - 5.6 8 mΩ GS D j Fig. 13 Dynamic characteristics Q gate-drain charge V = 10 V; I = 60 A; V = 30 V; - 7.7 - nC GD GS D DS Fig. 15; Fig. 14

Nexperia PSMN8R5-60YS N-channel LFPAK 60 V, 8 mΩ standard level MOSFET Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V = 10 V; I = 60 A; V = 30 V; - 39 - nC G(tot) GS D DS Fig. 14; Fig. 15 Avalanche ruggedness E non-repetitive drain- V = 10 V; T = 25 °C; I = 76 A; - - 97 mJ DS(AL)S GS j(init) D source avalanche V ≤ 60 V; R = 50 Ω; unclamped sup GS energy 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source 4 G gate mbb076 S 1 2 3 4 mb D mounting base; connected to LFPAK56; Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN8R5-60YS LFPAK56; Plastic single-ended surface-mounted package SOT669 Power-SO8 (LFPAK56; Power-SO8); 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN8R5-60YS 8R560 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥ 25 °C; T ≤ 175 °C - 60 V DS j j V drain-gate voltage T ≥ 25 °C; T ≤ 175 °C; R = 20 kΩ - 60 V DGR j j GS PSMN8R5-60YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 22 July 2015 2 / 14

Nexperia PSMN8R5-60YS N-channel LFPAK 60 V, 8 mΩ standard level MOSFET Symbol Parameter Conditions Min Max Unit V gate-source voltage -20 20 V GS P total power dissipation T = 25 °C; Fig. 1 - 106 W tot mb I drain current V = 10 V; T = 100 °C; Fig. 2 - 54 A D GS mb V = 10 V; T = 25 °C; Fig. 2 - 76 A GS mb I peak drain current pulsed; t ≤ 10 µs; T = 25 °C; Fig. 3 - 303 A DM p mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j T peak soldering temperature - 260 °C sld(M) Source-drain diode I source current T = 25 °C - 76 A S mb I peak source current pulsed; t ≤ 10 µs; T = 25 °C - 303 A SM p mb Avalanche ruggedness E non-repetitive drain-source V = 10 V; T = 25 °C; I = 76 A; - 97 mJ DS(AL)S GS j(init) D avalanche energy V ≤ 60 V; R = 50 Ω; unclamped sup GS 03aa16 120 Pder (%) 80 40 0 0 50 100 150 200 Tmb(°C) Fig. 1. Normalized total power dissipation as a function of mounting base temperature PSMN8R5-60YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 22 July 2015 3 / 14

Nexperia PSMN8R5-60YS N-channel LFPAK 60 V, 8 mΩ standard level MOSFET 003aad791 100 ID (A) 80 60 40 20 0 0 50 100 150 200 Tmb(°C) Fig. 2. Continuous drain current as a function of mounting base temperature 103 003aad792 ID (A) LimitRDSon=VDS/ID 102 tp=10µs 100µs 10 DC 1 1ms 10ms 100ms 10-1 10-1 1 10 102 103 VDS(V) Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance Fig. 4 - 0.63 1.42 K/W th(j-mb) from junction to mounting base PSMN8R5-60YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 22 July 2015 4 / 14

Nexperia PSMN8R5-60YS N-channel LFPAK 60 V, 8 mΩ standard level MOSFET 003aad834 1 Zth(j-mb) d=0.5 (K/W) 0.2 10-1 0.1 0.05 10-2 0.02 P δ= Ttp singleshot tp t T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp(s) 1 Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I = 250 µA; V = 0 V; T = -55 °C 54 - - V (BR)DSS D GS j breakdown voltage I = 250 µA; V = 0 V; T = 25 °C 60 - - V D GS j V gate-source threshold I = 1 mA; V = V ; T = 25 °C; 2 3 3.8 V GS(th) D DS GS j voltage Fig. 10; Fig. 11 V gate-source threshold I = 1 mA; V = V ; T = -55 °C; - - 4.3 V GSth D DS GS j voltage Fig. 11 I = 1 mA; V = V ; T = 175 °C; 0.95 - - V D DS GS j Fig. 11 I drain leakage current V = 60 V; V = 0 V; T = 25 °C - 0.03 2 µA DSS DS GS j V = 60 V; V = 0 V; T = 125 °C - - 50 µA DS GS j I gate leakage current V = 20 V; V = 0 V; T = 25 °C - 2 100 nA GSS GS DS j V = -20 V; V = 0 V; T = 25 °C - 2 100 nA GS DS j R drain-source on-state V = 10 V; I = 15 A; T = 175 °C; - 12 18.4 mΩ DSon GS D j resistance Fig. 12 V = 10 V; I = 15 A; T = 100 °C; - - 12.8 mΩ GS D j Fig. 12 V = 10 V; I = 15 A; T = 25 °C; - 5.6 8 mΩ GS D j Fig. 13 R gate resistance f = 1 MHz - 0.61 - Ω G PSMN8R5-60YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 22 July 2015 5 / 14

Nexperia PSMN8R5-60YS N-channel LFPAK 60 V, 8 mΩ standard level MOSFET Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q total gate charge I = 60 A; V = 30 V; V = 10 V; - 39 - nC G(tot) D DS GS Fig. 14; Fig. 15 I = 0 A; V = 0 V; V = 10 V - 33 - nC D DS GS Q gate-source charge I = 60 A; V = 30 V; V = 10 V; - 13.3 - nC GS D DS GS Fig. 15; Fig. 14 Q pre-threshold gate- I = 60 A; V = 30 V; V = 10 V; - 7 - nC GS(th) D DS GS source charge Fig. 14 Q post-threshold gate- - 6.2 - nC GS(th-pl) source charge Q gate-drain charge I = 60 A; V = 30 V; V = 10 V; - 7.7 - nC GD D DS GS Fig. 15; Fig. 14 V gate-source plateau V = 30 V; Fig. 14; Fig. 15 - 5.2 - V GS(pl) DS voltage C input capacitance V = 30 V; V = 0 V; f = 1 MHz; - 2370 - pF iss DS GS T = 25 °C; Fig. 16 C output capacitance j - 307 - pF oss C reverse transfer - 172 - pF rss capacitance t turn-on delay time V = 30 V; R = 0.5 Ω; V = 10 V; - 18.4 - ns d(on) DS L GS R = 4.7 Ω t rise time G(ext) - 13.7 - ns r t turn-off delay time - 32.4 - ns d(off) t fall time - 9.2 - ns f Source-drain diode V source-drain voltage I = 15 A; V = 0 V; T = 25 °C; Fig. 17 - 0.8 1.2 V SD S GS j t reverse recovery time I = 20 A; dI /dt = -100 A/µs; V = 0 V; - 43.3 - ns rr S S GS V = 30 V Q recovered charge DS - 61.4 - nC r PSMN8R5-60YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 22 July 2015 6 / 14

Nexperia PSMN8R5-60YS N-channel LFPAK 60 V, 8 mΩ standard level MOSFET 60 003aad794 4000 003aad801 gfs C Ciss (pF) (S) 3000 40 Crss 2000 20 1000 0 0 0 20 40 60 80 0 3 6 9 12 ID(A) VGS(V) Fig. 5. Forward transconductance as a function of Fig. 6. Input and reverse transfer capacitances as a drain current; typical values function of gate-source voltage, typical values 003aad797 003aad795 40 80 RDSon ID 10 7 6 5.5 (A) (mΩ) 30 60 5 20 40 VGS(V)=4.5 10 20 0 0 4 8 12 16 20 0 0.5 1 1.5 2 VGS(V) VDS(V) Fig. 7. Drain-source on-state resistance as a function Fig. 8. Output characteristics: drain current as a of gate-source voltage; typical values function of drain-source voltage; typical values PSMN8R5-60YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 22 July 2015 7 / 14

Nexperia PSMN8R5-60YS N-channel LFPAK 60 V, 8 mΩ standard level MOSFET 80 003aad796 10-1 aaa-019191 IIDD ID ((AA)) (A) 10-2 60 MMiinn TTyypp MMaaxx 10-3 40 10-4 20 Tj=175°C Tj=25°C 10-5 0 10-6 0 2 4 6 0 1 2 3 4 5 VGS(V) VGS (V) T = 25 °C; V = 5V Fig. 9. Transfer characteristics: drain current as a j DS function of gate-source voltage; typical values Fig. 10. Sub-threshold drain current as a function of gate-source voltage aaa-019190 003aad696 5 2.4 VVGGSS((tthh)) a ((VV)) 2 4 MMaaxx 1.6 3 TTyypp 1.2 2 MMiinn 0.8 1 0.4 0 0 -60 -30 0 30 60 90 120 150 180 -60 0 60 120 180 Tj (°C) Tj(°C) I = 1 mA ; V = V D DS GS Fig. 12. Normalized drain-source on-state resistance Fig. 11. Gate-source threshold voltage as a function of factor as a function of junction temperature. junction temperature PSMN8R5-60YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 22 July 2015 8 / 14

Nexperia PSMN8R5-60YS N-channel LFPAK 60 V, 8 mΩ standard level MOSFET 003aad798 25 RDSon VGS(V)=5 5.5 VDS (mΩ) ID 20 VGS(pl) 15 VGS(th) VGS 6 QGS2 10 7 QGS1 8 QGS QGD 10 QG(tot) 003aaa508 5 Fig. 14. Gate charge waveform definitions 0 20 40 60 80 ID(A) Fig. 13. Drain-source on-state resistance as a function of drain current; typical values 10 003aad799 104 003aad800 VGS (V) 12V C (pF) 8 VDS=30V 48V Ciss 6 103 4 Coss 2 Crss 0 102 0 20 40 60 10-1 1 10 102 QG(nC) VDS(V) Fig. 15. Gate-source voltage as a function of gate Fig. 16. Input, output and reverse transfer capacitances charge; typical values as a function of drain-source voltage; typical values PSMN8R5-60YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 22 July 2015 9 / 14

Nexperia PSMN8R5-60YS N-channel LFPAK 60 V, 8 mΩ standard level MOSFET 003aad802 80 IS (A) 60 40 20 Tj=175°C Tj=25°C 0 0 0.4 0.8 1.2 VSD(V) Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN8R5-60YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 22 July 2015 10 / 14

Nexperia PSMN8R5-60YS N-channel LFPAK 60 V, 8 mΩ standard level MOSFET 11. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 E A A2 C b2 c2 E1 L1 b3 mounting base b4 D1 H D L2 1 2 3 4 X e b w A c 1/2 e A (A3) A1 C q L detail X y C 0 5 mm θ scale 8° 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 b3 b4 c c2 D(1) D1(1) E(1) E1(1) e H L L1 L2 w y max 1.20 0.15 1.10 0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 6.2 0.85 1.3 1.3 mm nom 0.25 1.27 0.25 0.1 min 1.01 0.00 0.95 0.35 3.62 2.0 0.7 0.19 0.24 3.80 4.8 3.1 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. sot669_po Outline References European Issue date version IEC JEDEC JEITA projection 11-03-25 SOT669 MO-235 13-02-27 Fig. 18. Package outline LFPAK56; Power-SO8 (SOT669) PSMN8R5-60YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 22 July 2015 11 / 14

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Nexperia PSMN8R5-60YS N-channel LFPAK 60 V, 8 mΩ standard level MOSFET 13. Contents 1 General description ...............................................1 2 Features and benefits ............................................1 3 Applications ...........................................................1 4 Quick reference data .............................................1 5 Pinning information ...............................................2 6 Ordering information .............................................2 7 Marking ...................................................................2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics .......................................................5 11 Package outline ...................................................11 12 Legal information .................................................12 12.1 Data sheet status ...............................................12 12.2 Definitions ...........................................................12 12.3 Disclaimers .........................................................12 12.4 Trademarks ........................................................13 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 22 July 2015 PSMN8R5-60YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 22 July 2015 14 / 14