PSMN6R3-120ES N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses • Improved dynamic avalanche performance • Suitable for standard level gate drive • I2PAK package for slimline adaptors & height constrained applications 3. Applications • AC-to-DC power supply • Synchronous rectification • Motor control • Slimline adaptors & chargers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥ 25 °C; T ≤ 175 °C - - 120 V DS j j I drain current T = 25 °C; V = 10 V; Fig. 1 - - 70 A D mb GS P total power dissipation T = 25 °C; Fig. 2 - - 405 W tot mb Static characteristics R drain-source on-state V = 10 V; I = 25 A; T = 25 °C; 4 5.7 6.7 mΩ DSon GS D j resistance Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V; I = 25 A; V = 60 V; - 61.9 - nC GD GS D DS Fig. 14; Fig. 15 Q total gate charge - 207.1 - nC G(tot) Avalanche ruggedness E non-repetitive drain- V = 10 V; T = 25 °C; I = 70 A; - - 532 mJ DS(AL)S GS j(init) D source avalanche V ≤ 120 V; unclamped; R = 50 Ω; sup GS energy Fig. 3

Nexperia PSMN6R3-120ES N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mb D drain mbb076 S 1 2 3 I2PAK (SOT226) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN6R3-120ES I2PAK plastic single-ended package (I2PAK); TO-262 SOT226 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥ 25 °C; T ≤ 175 °C - 120 V DS j j V drain-gate voltage T ≥ 25 °C; T ≤ 175 °C; R = 20 kΩ - 120 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V; T = 25 °C; Fig. 1 - 70 A D GS mb V = 10 V; T = 100 °C; Fig. 1 - 70 A GS mb I peak drain current pulsed; t ≤ 10 µs; T = 25 °C; Fig. 4 - 280 A DM p mb P total power dissipation T = 25 °C; Fig. 2 - 405 W tot mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j T peak soldering temperature - 260 °C sld(M) Source-drain diode I source current T = 25 °C - 70 A S mb I peak source current pulsed; t ≤ 10 µs; T = 25 °C - 280 A SM p mb PSMN6R3-120ES All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 2 / 12

Nexperia PSMN6R3-120ES N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK Symbol Parameter Conditions Min Max Unit Avalanche ruggedness E non-repetitive drain-source V = 10 V; T = 25 °C; I = 70 A; - 532 mJ DS(AL)S GS j(init) D avalanche energy V ≤ 120 V; unclamped; R = 50 Ω; sup GS Fig. 3 003aaj851 03aa16 80 120 IIDD ((AA)) Pder (%) 60 80 40 40 20 0 0 0 30 60 90 120 150 180 0 50 100 150 200 Tj (°C) Tmb(°C) Fig. 1. Continuous drain current as a function of Fig. 2. Normalized total power dissipation as a mounting base temperature function of mounting base temperature 102 003aaj852 IIAALL ((AA)) ((11)) 10 ((22)) 1 10-3 10-2 10-1 1 10 tAL (ms) Fig. 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time PSMN6R3-120ES All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 3 / 12

Nexperia PSMN6R3-120ES N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK 103 003aaj850 IIDD LLiimmiitt RRDDSSoonn == VVDDSS // IIDD ((AA)) ttpp == 1100 uuss 102 110000 uuss 10 DDCC 11 mmss 1 1100 mmss 110000 mmss 10-1 1 10 102 103 VDS (V) Fig. 4. Safe operating area; continuous and peak drain current as a function of drain-source voltage 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance Fig. 5 - 0.3 0.37 K/W th(j-mb) from junction to mounting base R thermal resistance vertical in free air - 65 - K/W th(j-a) from junction to ambient 003aaj849 1 ZZtthh((jj--mmbb)) ((KK//WW)) δδ == 00..55 10-1 00..22 00..11 00..0055 10-2 00..0022 P δ = tTp ssiinnggllee sshhoott tp t T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN6R3-120ES All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 4 / 12

Nexperia PSMN6R3-120ES N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I = 250 µA; V = 0 V; T = 25 °C 120 - - V (BR)DSS D GS j breakdown voltage I = 250 µA; V = 0 V; T = -55 °C 108 - - V D GS j V gate-source threshold I = 1 mA; V = V ; T = 25 °C; 2 3 4 V GS(th) D DS GS j voltage Fig. 10; Fig. 11 I = 1 mA; V = V ; T = 175 °C; 1 - - V D DS GS j Fig. 10; Fig. 11 I = 1 mA; V = V ; T = -55 °C; - - 4.6 V D DS GS j Fig. 10; Fig. 11 I drain leakage current V = 120 V; V = 0 V; T = 25 °C - 0.1 1 µA DSS DS GS j V = 120 V; V = 0 V; T = 175 °C - - 500 µA DS GS j I gate leakage current V = 20 V; V = 0 V; T = 25 °C - 10 100 nA GSS GS DS j V = -20 V; V = 0 V; T = 25 °C - 10 100 nA GS DS j R drain-source on-state V = 10 V; I = 25 A; T = 25 °C; 4 5.7 6.7 mΩ DSon GS D j resistance Fig. 12 V = 10 V; I = 25 A; T = 175 °C; - 16.5 19.4 mΩ GS D j Fig. 13; Fig. 12 R internal gate f = 1 MHz 0.44 0.88 1.76 Ω G resistance (AC) Dynamic characteristics Q total gate charge I = 25 A; V = 60 V; V = 10 V; - 207.1 - nC G(tot) D DS GS Fig. 14; Fig. 15 Q gate-source charge - 43.2 - nC GS Q pre-threshold gate- - 29.8 - nC GS(th) source charge Q post-threshold gate- - 13.4 - nC GS(th-pl) source charge Q gate-drain charge - 61.9 - nC GD V gate-source plateau I = 25 A; V = 60 V; Fig. 14; Fig. 15 - 4.3 - V GS(pl) D DS voltage C input capacitance V = 60 V; V = 0 V; f = 1 MHz; - 11384 - pF iss DS GS T = 25 °C; Fig. 16 C output capacitance j - 534 - pF oss C reverse transfer - 358 - pF rss capacitance t turn-on delay time V = 60 V; R = 2.4 Ω; V = 10 V; - 42.1 - ns d(on) DS L GS R = 5 Ω; T = 25 °C t rise time G(ext) j - 58.2 - ns r PSMN6R3-120ES All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 5 / 12

Nexperia PSMN6R3-120ES N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK Symbol Parameter Conditions Min Typ Max Unit t turn-off delay time - 142.1 - ns d(off) t fall time - 67.7 - ns f Source-drain diode V source-drain voltage I = 25 A; V = 0 V; T = 25 °C; Fig. 17 - 0.79 1.2 V SD S GS j t reverse recovery time I = 25 A; dI /dt = -100 A/µs; V = 0 V; - 76.1 - ns rr S S GS V = 60 V Q recovered charge DS - 264.2 - nC r 003aaj844 003aaj843 120 24 ID 6 5.5 RDSon (A) 10 5 (mΩ) 100 20 80 16 V (V)=4.5 GS 60 12 40 8 20 4 4 0 0 0 1 2 3 4 0 4 8 12 16 20 VDS(V) VGS(V) Fig. 6. Output characteristics: drain current as a Fig. 7. Drain-source on-state resistance as a function function of drain-source voltage; typical values of gate-source voltage; typical values 003aaj841 003aaj842 250 100 g I fs D (S) (A) 200 80 150 60 100 40 Tj=175°C Tj=25°C 50 20 0 0 0 20 40 60 80 100 0 2 4 6 ID(A) VGS(V) Fig. 8. Forward transconductance as a function of Fig. 9. Transfer characteristics: drain current as a drain current; typical values function of gate-source voltage; typical values PSMN6R3-120ES All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 6 / 12

Nexperia PSMN6R3-120ES N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK 5 003aad280 10-1 03aa35 VGS(th) ID (V) (A) min typ max 4 10-2 max 3 10-3 typ 2 min 10-4 1 10-5 0 10-6 -60 0 60 120 180 0 2 4 6 Tj(°C) VGS(V) Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Sub-threshold drain current as a function of junction temperature gate-source voltage 003aaj848 003aak793 25 3 aa R DSon (mΩ) 4.5 20 2.4 15 1.8 10 1.2 V (V)=5V GS 5.5 7 5 10 0.6 0 0 0 20 40 60 80 100 120 -60 -30 0 30 60 90 120 150 180 ID(A) Tj (°C) Fig. 12. Drain-source on-state resistance as a function Fig. 13. Normalized drain-source on-state resistance of drain current; typical values factor as a function of junction temperature PSMN6R3-120ES All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 7 / 12

Nexperia PSMN6R3-120ES N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK 003aaj845 10 VDS V GS (V) 96V ID 8 60V VGS(pl) VDS=24V 6 VGS(th) VGS 4 QGS1 QGS2 QGS QGD 2 QG(tot) 003aaa508 0 Fig. 14. Gate charge waveform definitions 0 50 100 150 200 250 Q (nC) G Fig. 15. Gate-source voltage as a function of gate charge; typical values 003aaj846 003aaj847 1E+5 100 C IS (A) (pF) C iss 80 104 60 C oss 103 40 C 102 rss Tj=175°C Tj=25°C 20 10 0 10-1 1 10 102 0 0.3 0.6 0.9 1.2 VDS(V) VSD(V) Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source (diode forward) current as a function of as a function of drain-source voltage; typical source-drain (diode forward) voltage; typical values values PSMN6R3-120ES All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 8 / 12

Nexperia PSMN6R3-120ES N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK 10. Package outline Plasticsingle-endedpackage(I2PAK);low-profile3-leadTO-262 SOT226 A D1 E A1 mounting base D L1 Q b1 L 1 2 3 b c e e 0 5 10mm scale DIMENSIONS(mmaretheoriginaldimensions) UNIT A A1 b b1 c mDax D1 E e L L1 Q 4.5 1.40 0.85 1.3 0.7 1.6 10.3 15.0 3.30 2.6 mm 11 2.54 4.1 1.27 0.60 1.0 0.4 1.2 9.7 13.5 2.79 2.2 OUTLINE REFERENCES EUROPEAN ISSUEDATE VERSION IEC JEDEC JEITA PROJECTION 06-02-14 SOT226 TO-262 09-08-25 Fig. 18. Package outline I2PAK (SOT226) PSMN6R3-120ES All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 9 / 12

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Nexperia PSMN6R3-120ES N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK 12. Contents 1 General description ...............................................1 2 Features and benefits ............................................1 3 Applications ...........................................................1 4 Quick reference data .............................................1 5 Pinning information ...............................................2 6 Ordering information .............................................2 7 Limiting values .......................................................2 8 Thermal characteristics .........................................4 9 Characteristics .......................................................5 10 Package outline .....................................................9 11 Legal information .................................................10 11.1 Data sheet status ...............................................10 11.2 Definitions ...........................................................10 11.3 Disclaimers .........................................................10 11.4 Trademarks ........................................................11 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 08 May 2013 PSMN6R3-120ES All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 12 / 12