PSMN6R0-30YL N-channel 30 V 6 mΩ logic level MOSFET in LFPAK Rev. 04 — 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits  High efficiency due to low switching  Suitable for logic level gate drive and conduction losses sources 1.3 Applications  Class-D amplifiers  Motor control  DC-to-DC converters  Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥25°C; T ≤175°C - - 30 V DS j j I drain current T =25°C; V =10V; - - 79 A D mb GS see Figure 1 P total power T =25°C; see Figure 2 - - 55 W tot mb dissipation T junction temperature -55 - 175 °C j Static characteristics R drain-source on-state V =10V; I =15A; - 4.26 6 mΩ DSon GS D resistance T =25°C j Dynamic characteristics Q gate-drain charge V =4.5V; I =10A; - 3.08 - nC GD GS D V =12V; see Figure 14; Q total gate charge DS - 11 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V; T =25°C; - - 26 mJ DS(AL)S GS j(init) drain-source I =73A; V ≤30V; D sup avalanche energy R =50Ω; unclamped GS

PSMN6R0-30YL Nexperia N-channel 30 V 6 mΩ logic level MOSFET in LFPAK 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source 3 S source G 4 G gate mb D mounting base; connected to mbb076 S drain 1 2 3 4 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version PSMN6R0-30YL LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 4. Limiting values Table 4. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥25°C; T ≤175°C - 30 V DS j j V peak drain-source voltage t ≤25ns; f≤500kHz; E ≤110nJ; - 35 V DSM p DS(AL) pulsed V drain-gate voltage T ≥25°C; T ≤175°C; R =20kΩ - 30 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V; T =100°C; see Figure 1 - 56 A D GS mb V =10V; T =25°C; seeF igure 1 - 79 A GS mb I peak drain current pulsed; t ≤10µs; T =25°C; - 292 A DM p mb see Figure 3 P total power dissipation T =25°C; seeF igure 2 - 55 W tot mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j Source-drain diode I source current T =25°C - 73 A S mb I peak source current pulsed; t ≤10µs; T =25°C - 292 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V; T =25°C; I =73A; - 26 mJ DS(AL)S GS j(init) D avalanche energy V ≤30V; R =50Ω; unclamped sup GS PSMN6R0-30YL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 10 March 2011 2 of 14

PSMN6R0-30YL Nexperia N-channel 30 V 6 mΩ logic level MOSFET in LFPAK 003aac631 03aa16 100 120 ID (A) Pder 80 (%) 80 60 40 40 20 0 0 0 50 100 150 200 0 50 100 150 200 Tmb (°C) Tmb (°C) Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a mounting base temperature function of mounting base temperature 003aac633 103 I D 10 μs (A) Limit R = V / I DSon DS D 102 100 μs 10 1 ms 10 ms DC 1 100 ms 10-1 10-1 1 10 V (V) 102 DS Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN6R0-30YL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 10 March 2011 3 of 14

PSMN6R0-30YL Nexperia N-channel 30 V 6 mΩ logic level MOSFET in LFPAK 5. Thermal characteristics Table 5. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from see Figure 4 - 1.4 2.25 K/W th(j-mb) junction to mounting base 003aac632 10 Z th(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 P δ = tp 10-1 0.05 T 0.02 tp t single shot T 10-2 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN6R0-30YL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 10 March 2011 4 of 14

PSMN6R0-30YL Nexperia N-channel 30 V 6 mΩ logic level MOSFET in LFPAK 6. Characteristics Table 6. Characterist ics Tested to JEDEC standards where applicable. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I =250µA; V =0V; T =25°C 30 - - V (BR)DSS D GS j breakdown voltage I =250µA; V =0V; T =-55°C 27 - - V D GS j V gate-source threshold I =1mA; V =V ; T =25°C; 1.3 1.7 2.15 V GS(th) D DS GS j voltage see Figure 11; see Figure 12 I =1mA; V =V ; T =150°C; 0.65 - - V D DS GS j see Figure 12 I =1mA; V =V ; T =-55°C; - - 2.45 V D DS GS j see Figure 12 I drain leakage current V =30V; V =0V; T =25°C - - 1 µA DSS DS GS j V =30V; V =0V; T =150°C - - 100 µA DS GS j I gate leakage current V =16V; V =0V; T =25°C - - 100 nA GSS GS DS j V =-16V; V =0V; T =25°C - - 100 nA GS DS j R drain-source on-state V =4.5V; I =15A; T =25°C - 6.18 7.87 mΩ DSon GS D j resistance V =10V; I =15A; T =150°C; - - 10.5 mΩ GS D j see Figure 13 V =10V; I =15A; T =25°C - 4.26 6 mΩ GS D j R gate resistance f=1MHz - 0.63 1.5 Ω G Dynamic characteristics Q total gate charge I =10A; V =12V; V =4.5V; - 11 - nC G(tot) D DS GS see Figure 14; see Figure 15 I =10A; V =12V; V =10V; - 24 - nC D DS GS see Figure 14; see Figure 15 I =0A; V =0V; V =10V - 22 - nC D DS GS Q gate-source charge I =10A; V =12V; V =4.5V; - 4.2 - nC GS D DS GS see Figure 14; see Figure 15 Q pre-threshold - 2.4 - nC GS(th) gate-source charge Q post-threshold - 1.8 - nC GS(th-pl) gate-source charge Q gate-drain charge - 3.08 - nC GD V gate-source plateau V =12V; seeF igure 14; - 2.6 - V GS(pl) DS voltage see Figure 15 C input capacitance V =12V; V =0V; f=1MHz; - 1425 - pF iss DS GS T =25°C; see Figure 16 C output capacitance j - 313 - pF oss C reverse transfer - 155 - pF rss capacitance t turn-on delay time V =12V; R =0.5Ω; V =4.5V; - 25 - ns d(on) DS L GS R =4.7Ω t rise time G(ext) - 43 - ns r t turn-off delay time - 31 - ns d(off) t fall time - 11 - ns f PSMN6R0-30YL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 10 March 2011 5 of 14

PSMN6R0-30YL Nexperia N-channel 30 V 6 mΩ logic level MOSFET in LFPAK Table 6. Characteristics …continued Tested to JEDEC standards where applicable. Symbol Parameter Conditions Min Typ Max Unit Source-drain diode V source-drain voltage I =25A; V =0V; T =25°C; - 0.88 1.2 V SD S GS j see Figure 17 t reverse recovery time I =20A; dI /dt=-100A/µs; V =0V; - 32 - ns rr S S GS V =20V Q recovered charge DS - 25 - nC r 003aac625 003aac627 100 80 I 10 D I (A) 4.5 D (A) 80 60 60 40 V (V) = 3.2 GS 40 3 20 20 2.8 Tj = 150 °C 25 °C 2.6 2.4 0 0 0 2 4 6 8VDS (V)10 0 1 2 3 VGS (V) 4 Fig 5. Output characteristics: drain current as a Fig 6. Transfer characteristics: drain current as a function of drain-source voltage; typical values function of gate-source voltage; typical values 003aac630 003aac636 20 2500 RDSon C Ciss (mΩ) (pF) 2000 15 V (V) = 3.2 GS C 1500 rss 10 4.5 1000 10 5 500 0 0 0 10 20 30 I (A) 40 0 2 4 6 8 10 D V (V) GS Fig 7. Drain-source on-state resistance as a function Fig 8. Input and reverse transfer capacitances as a of drain current; typical values function of gate-source voltage; typical values PSMN6R0-30YL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 10 March 2011 6 of 14

PSMN6R0-30YL Nexperia N-channel 30 V 6 mΩ logic level MOSFET in LFPAK 003aac629 003aac628 80 10 g fs (S) RDSon (mΩ) 60 8 40 6 20 0 4 0 20 40 I (A) 60 2 4 6 8 10 D V (V) GS Fig 9. Forward transconductance as a function of Fig 10. Drain-source on-state resistance as a function drain current; typical values of gate-source voltage; typical values 10-1 003aab271 3 003aac337 I D (A) 10-2 VGS(th) (V) min typ max 2 max 10-3 typ 10-4 min 1 10-5 10-6 0 0 1 2 VGS (V) 3 -60 0 60 120 Tj (°C)180 Fig 11. Sub-threshold drain current as a function of Fig 12. Gate-source threshold voltage as a function of gate-source voltage junction temperature PSMN6R0-30YL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 10 March 2011 7 of 14

PSMN6R0-30YL Nexperia N-channel 30 V 6 mΩ logic level MOSFET in LFPAK 03aa27 2 VDS a ID 1.5 VGS(pl) 1 VGS(th) VGS QGS1 QGS2 0.5 QGS QGD QG(tot) 003aaa508 0 −60 0 60 120 180 Tj (°C) Fig 13. Normalized drain-source on-state resistance Fig 14. Gate charge waveform definitions factor as a function of junction temperature 003aac638 003aac637 10 1800 C V iss GS C (V) (pF)1600 8 1400 C oss 1200 6 VDS = 12 (V) VDS = 19 (V) 1000 800 4 600 C rss 400 2 200 0 0 0 10 20 Q (nC) 30 10-1 1 10 V (V) 102 G DS Fig 15. Gate-source voltage as a function of gate Fig 16. Input, output and reverse transfer capacitances charge; typical values as a function of drain-source voltage; typical values PSMN6R0-30YL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 10 March 2011 8 of 14

PSMN6R0-30YL Nexperia N-channel 30 V 6 mΩ logic level MOSFET in LFPAK 003aac626 80 I S (A) 60 40 T = 150 °C j 20 25 °C 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V (V) SD Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN6R0-30YL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 10 March 2011 9 of 14

PSMN6R0-30YL Nexperia N-channel 30 V 6 mΩ logic level MOSFET in LFPAK 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 A2 E A C b2 c2 E1 L1 b3 mounting base b4 D1 H D L2 1 2 3 4 X e b w M A c 1/2 e A (A 3 ) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 A2 A3 b b2 b3 b4 c c2 D(1) Dm1a(1x) E(1) E1(1) e H L L1 L2 w y θ 1.20 0.15 1.10 0.50 4.41 2.2 0.9 0.25 0.30 4.10 5.0 3.3 6.2 0.85 1.3 1.3 8° mm 0.25 4.20 1.27 0.25 0.1 1.01 0.00 0.95 0.35 3.62 2.0 0.7 0.19 0.24 3.80 4.8 3.1 5.8 0.40 0.8 0.8 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-10-13 SOT669 MO-235 06-03-16 Fig 18. Package outline SOT669 (LFPAK) PSMN6R0-30YL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 10 March 2011 10 of 14

PSMN6R0-30YL Nexperia N-channel 30 V 6 mΩ logic level MOSFET in LFPAK 8. Revision history Table 7. Revision his tory Document ID Release date Data sheet status Change notice Supersedes PSMN6R0-30YL v.4 20110310 Product data sheet - PSMN6R0-30YL v.3 Modifications: • Various changes to content. PSMN6R0-30YL v.3 20100104 Product data sheet - PSMN6R0-30YL v.2 PSMN6R0-30YL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 10 March 2011 11 of 14

PSMN6R0-30YL Nexperia N-channel 30 V 6 mΩ logic level MOSFET in LFPAK 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or Draft — The document is a draft version only. The content is still under safety-critical systems or equipment, nor in applications where failure or internal review and subject to formal approval, which may result in malfunction of a Nexperia product can reasonably be expected modifications or additions. Nexperia does not give any to result in personal injury, death or severe property or environmental representations or warranties as to the accuracy or completeness of damage. Nexperia accepts no liability for inclusion and/or use of information included herein and shall have no liability for the consequences of Nexperia products in such equipment or applications and use of such information. therefore such inclusion and/or use is at the customer’s own risk. Short data sheet — A short data sheet is an extract from a full data sheet Quick reference data — The Quick reference data is an extract of the with the same product type number(s) and title. A short data sheet is intended product data given in the Limiting values and Characteristics sections of this for quick reference only and should not be relied upon to contain detailed and document, and as such is not complete, exhaustive or legally binding. full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales Applications — Applications that are described herein for any of these office. 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It is customer’s sole responsibility to determine whether the Nexperia deemed to offer functions and qualities beyond those described in the product is suitable and fit for the customer’s applications and Product data sheet. products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their 9.3 Disclaimers applications and products. Limited warranty and liability — Information in this document is believed to Nexperia does not accept any liability related to any default, be accurate and reliable. However, Nexperia does not give any damage, costs or problem which is based on any weakness or default in the representations or warranties, expressed or implied, as to the accuracy or customer’s applications or products, or the application or use by customer’s completeness of such information and shall have no liability for the third party customer(s). Customer is responsible for doing all necessary consequences of use of such information. testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and In no event shall Nexperia be liable for any indirect, incidental, the products or of the application or use by customer’s third party punitive, special or consequential damages (including - without limitation - lost customer(s). Nexperia does not accept any liability in this respect. profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such Limiting values — Stress above one or more limiting values (as defined in damages are based on tort (including negligence), warranty, breach of the Absolute Maximum Ratings System of IEC 60134) will cause permanent contract or any other legal theory. damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in Notwithstanding any damages that customer might incur for any reason the Recommended operating conditions section (if present) or the whatsoever, Nexperia’s aggregate and cumulative liability towards Characteristics sections of this document is not warranted. Constant or customer for the products described herein shall be limited in accordance repeated exposure to limiting values will permanently and irreversibly affect with the Terms and conditions of commercial sale of Nexperia. the quality and reliability of the device. Right to make changes — Nexperia reserves the right to make Terms and conditions of commercial sale — Nexperia changes to information published in this document, including without products are sold subject to the general terms and conditions of commercial limitation specifications and product descriptions, at any time and without sale, as published at http://www.nexperia.com/profile/terms, unless otherwise notice. This document supersedes and replaces all information supplied prior agreed in a valid written individual agreement. In case an individual to the publication hereof. agreement is concluded only the terms and conditions of the respective PSMN6R0-30YL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 10 March 2011 12 of 14

PSMN6R0-30YL Nexperia N-channel 30 V 6 mΩ logic level MOSFET in LFPAK agreement shall apply. Nexperia hereby expressly objects to product for such automotive applications, use and specifications, and (b) applying the customer’s general terms and conditions with regard to the whenever customer uses the product for automotive applications beyond purchase of Nexperia products by customer. Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any No offer to sell or license — Nothing in this document may be interpreted or liability, damages or failed product claims resulting from customer design and construed as an offer to sell products that is open for acceptance or the grant, use of the product for automotive applications beyond Nexperia’s conveyance or implication of any license under any copyrights, patents or standard warranty and Nexperia’s product specifications. other industrial or intellectual property rights. 9.4 Trademarks Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com PSMN6R0-30YL All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 10 March 2011 13 of 14

PSMN6R0-30YL Nexperia N-channel 30 V 6 mΩ logic level MOSFET in LFPAK 11. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline. . . . . . . . . . . . . . . . . . . . . . . . .10 8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 10 Contact information. . . . . . . . . . . . . . . . . . . . . .13 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 10 March 2011