PSMN4R3-30PL N-channel 30 V 4.3 mΩ logic level MOSFET Rev. 01 — 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits (cid:132) High efficiency due to low switching (cid:132) Suitable for logic level gate drive and conduction losses sources 1.3 Applications (cid:132) DC-to-DC converters (cid:132) Motor control (cid:132) Load switiching (cid:132) Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥25°C; T ≤175°C - - 30 V DS j j I drain current T =25°C; V =10V; [1] - - 100 A D mb GS see Figure 1 P total power T =25°C; see Figure 2 - - 103 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =4.5V; I =25A; - 5 - nC GD GS D V =15V; see Figure 14; DS see Figure 15 Static characteristics R drain-source V =10V; I =15A; [2] - 3.5 4.3 mΩ DSon GS D on-state resistance T =25°C; see Figure 13 j [1] Continuous current is limited by package. [2] Measured 3 mm from package.

PSMN4R3-30PL Nexperia N-channel 30 V 4.3 mΩ logic level MOSFET 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3 S source G mb D mounting base; connected to drain mbb076 S 1 2 3 SOT78 (TO-220AB; SC-46) 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version PSMN4R3-30PL TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 SC-46 TO-220AB PSMN4R3-30PL_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 16 June 2009 2 of 13

PSMN4R3-30PL Nexperia N-channel 30 V 4.3 mΩ logic level MOSFET 4. Limiting values Table 4. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥25°C; T ≤175°C - 30 V DS j j V drain-gate voltage T ≥25°C; T ≤175°C; R =20kΩ - 30 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V; T =100°C; see Figure 1 [1] - 80 A D GS mb V =10V; T =25°C; see Figure 1 [1] - 100 A GS mb I peak drain current t ≤10µs; pulsed; T =25°C; see Figure 3 - 465 A DM p mb P total power dissipation T =25°C; see Figure 2 - 103 W tot mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j Source-drain diode I source current T =25°C [1] - 100 A S mb I peak source current t ≤10µs; pulsed; T =25°C - 465 A SM p mb Avalanche ruggedness E non-repetitive V =10V; T =25°C; I =100A; V ≤30V; - 74 mJ DS(AL)S GS j(init) D sup drain-source avalanche R =50Ω; unclamped GS energy [1] Continuous current is limited by package. 003aad235 03aa16 150 120 ID Pder (A) (%) 100 80 (1) 50 40 0 0 0 50 100 150 200 0 50 100 150 200 Tmb (°C) Tmb (°C) Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature PSMN4R3-30PL_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 16 June 2009 3 of 13

PSMN4R3-30PL Nexperia N-channel 30 V 4.3 mΩ logic level MOSFET 003aad296 103 ID Limit RDSon = VDS / ID (A) 10 μs 102 (1) 100 μs 10 1 ms DC 10 ms 100 ms 1 10-1 1 10 VDS (V) 102 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from see Figure 4 - 1 1.5 K/W th(j-mb) junction to mounting base 003aad234 10 Z th (j-mb) (K/W) 1 δ = 0.5 0.2 10-1 0.1 0.05 P δ = tp 10-2 0.02 T single shot 10-3 tp t T 10-4 10-6 10-5 10-4 10-3 10-2 10-1 1 10 t (s) p Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN4R3-30PL_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 16 June 2009 4 of 13

PSMN4R3-30PL Nexperia N-channel 30 V 4.3 mΩ logic level MOSFET 6. Characteristics Table 6. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I =250µA; V =0V; T =25°C 30 - - V (BR)DSS D GS j breakdown voltage I =250µA; V =0V; T =-55°C 27 - - V D GS j V gate-source threshold I =1mA; V = V ; T =25°C; 1.3 1.7 2.15 V GS(th) D DS GS j voltage see Figure 10; see Figure 11 I =1mA; V = V ; T =175°C; 0.5 - - V D DS GS j see Figure 11 I =1mA; V = V ; T =-55°C; - - 2.45 V D DS GS j see Figure 11 I drain leakage current V =30V; V =0V; T =25°C - - 1 µA DSS DS GS j V =30V; V =0V; T =125°C - - 40 µA DS GS j I gate leakage current V =16V; V =0V; T =25°C - - 100 nA GSS GS DS j V =-16V; V =0V; T =25°C - - 100 nA GS DS j R drain-source on-state V =4.5V; I =15A; T =25°C [2] - 4.5 6.2 mΩ DSon GS D j resistance V =10V; I =15A; T =100°C; - - 6 mΩ GS D j see Figure 12; see Figure 13 V =10V; I =15A; T =25°C; [2] - 3.5 4.3 mΩ GS D j see Figure 13; R gate resistance f=1MHz - 1 - Ω G Dynamic characteristics Q total gate charge I =25A; V =15V; V =4.5V; - 19 - nC G(tot) D DS GS see Figure 14; see Figure 15 I =25A; V =15V; V =10V; - 41.5 - nC D DS GS see Figure 14; see Figure 15 Q gate-source charge I =25A; V =15V; V =4.5V; - 8 - nC GS D DS GS see Figure 14; see Figure 15 Q pre-threshold - 4 - nC GS(th) gate-source charge Q post-threshold - 4 - nC GS(th-pl) gate-source charge Q gate-drain charge - 5 - nC GD V gate-source plateau V =15V; see Figure 14; - 2.7 - V GS(pl) DS voltage see Figure 15 C input capacitance V =12V; V =0V; f=1MHz; - 2400 - pF iss DS GS T =25°C; see Figure 16 C output capacitance j - 500 - pF oss C reverse transfer - 240 - pF rss capacitance t turn-on delay time V =20V; R =0.5Ω; V =10V; - 28 - ns d(on) DS L GS R =5.6Ω t rise time G(ext) - 58 - ns r t turn-off delay time - 44 - ns d(off) t fall time - 21 - ns f PSMN4R3-30PL_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 16 June 2009 5 of 13

PSMN4R3-30PL Nexperia N-channel 30 V 4.3 mΩ logic level MOSFET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Source-drain diode V source-drain voltage I =25A; V =0V; T =25°C; - 0.81 1.2 V SD S GS j see Figure 17 t reverse recovery time I =20A; dI /dt=-100A/µs; V =0V; - 35 - ns rr S S GS V =30V Q recovered charge DS - 30 - nC r [1] Tested to JEDEC standards where applicable. [2] Measured 3 mm from package. 003aad244 003aad241 120 100 g I fs D (S) (A) 80 80 T = 175 °C 60 j 40 25 °C 40 20 0 0 0 20 40 60 80 100 0 1 2 3 4 5 I (A) V (V) D GS Fig 5. Forward transconductance as a function of Fig 6. Transfer characteristics: drain current as a drain current; typical values function of gate-source voltage; typical values PSMN4R3-30PL_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 16 June 2009 6 of 13

PSMN4R3-30PL Nexperia N-channel 30 V 4.3 mΩ logic level MOSFET 003aad240 003aad238 5000 12 C R DSon (pF) (mΩ) 4000 C iss 8 3000 C rss 2000 4 1000 0 0 0 3 6 9 12 0 5 10 15 V (V) GS VGS (V) Fig 7. Input and reverse transfer capacitances as a Fig 8. Drain-source on-state resistance as a function function of gate-source voltage; typical values of gate-source voltage; typical values 100 003aad236 10-1 003aab271 ID 10 ID (A) (A) 5 80 10-2 4 3 min typ max 3.5 60 10-3 40 10-4 20 VGS (V) =2.5 10-5 0 10-6 0 1 2 3 4 5 0 1 2 VGS (V) 3 V (V) DS Fig 9. Output characteristics: drain current as a Fig 10. Sub-threshold drain current as a function of function of drain-source voltage; typical values gate-source voltage PSMN4R3-30PL_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 16 June 2009 7 of 13

PSMN4R3-30PL Nexperia N-channel 30 V 4.3 mΩ logic level MOSFET 003aac982 03aa27 3 2 a VGS(th) (V) max 1.5 2 typ 1 min 1 0.5 0 0 -60 0 60 120 Tj (°C)180 −60 0 60 120 Tj (°C)180 Fig 11. Gate-source threshold voltage as a function of junction temperature Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aad237 16 R VDS DSon (mΩ) ID 3 12 VGS(pl) 8 3.5 VGS(th) 4 4.5 VGS 5 QGS1 QGS2 4 QGS QGD VGS (V) =10 QG(tot) 003aaa508 0 Fig 14. Gate charge waveform definitions 0 20 40 60 80 100 I (A) D Fig 13. Drain-source on-state resistance as a function of drain current; typical values PSMN4R3-30PL_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 16 June 2009 8 of 13

PSMN4R3-30PL Nexperia N-channel 30 V 4.3 mΩ logic level MOSFET 10 003aad242 104 003aad239 V GS C (V) (pF) 8 C iss 6 V = 15V DS 103 4 C oss 2 C rss 0 102 0 20 40 60 10-1 1 10 V (V) 102 DS Q (nC) G Fig 15. Gate-source voltage as a function of gate Fig 16. Input, output and reverse transfer capacitances charge; typical values as a function of drain-source voltage; typical values 003aad243 100 I S (A) 80 60 T = 175 °C j 40 25 °C 20 0 0 0.5 1 1.5 2 V (V) SD Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN4R3-30PL_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 16 June 2009 9 of 13

PSMN4R3-30PL Nexperia N-channel 30 V 4.3 mΩ logic level MOSFET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A p A1 q mounting D1 base D L1(1) L2(1) Q b1(2) L (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) mL2a(1x). p q Q 4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6 mm 2.54 3.0 4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 08-04-23 SOT78 3-lead TO-220AB SC-46 08-06-13 Fig 18. Package outline SOT78 (TO-220AB) PSMN4R3-30PL_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 16 June 2009 10 of 13

PSMN4R3-30PL Nexperia N-channel 30 V 4.3 mΩ logic level MOSFET 8. Revision history Table 7. Revision his tory Document ID Release date Data sheet status Change notice Supersedes PSMN4R3-30PL_1 20090616 Product data sheet - - PSMN4R3-30PL_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 16 June 2009 11 of 13

PSMN4R3-30PL Nexperia N-channel 30 V 4.3 mΩ logic level MOSFET 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no Draft — The document is a draft version only. The content is still under representation or warranty that such applications will be suitable for the internal review and subject to formal approval, which may result in specified use without further testing or modification. modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of Quick reference data — The Quick reference data is an extract of the information included herein and shall have no liability for the consequences of product data given in the Limiting values and Characteristics sections of this use of such information. document, and as such is not complete, exhaustive or legally binding. Short data sheet — A short data sheet is an extract from a full data sheet Limiting values — Stress above one or more limiting values (as defined in with the same product type number(s) and title. A short data sheet is intended the Absolute Maximum Ratings System of IEC 60134) may cause permanent for quick reference only and should not be relied upon to contain detailed and damage to the device. Limiting values are stress ratings only and operation of full information. For detailed and full information see the relevant full data the device at these or any other conditions above those given in the sheet, which is available on request via the local Nexperia sales Characteristics sections of this document is not implied. Exposure to limiting office. In case of any inconsistency or conflict with the short data sheet, the values for extended periods may affect device reliability. full data sheet shall prevail. Terms and conditions of sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published 9.3 Disclaimers at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless General — Information in this document is believed to be accurate and explicitly otherwise agreed to in writing by Nexperia. In case of reliable. However, Nexperia does not give any representations or any inconsistency or conflict between information in this document and such warranties, expressed or implied, as to the accuracy or completeness of such terms and conditions, the latter will prevail. information and shall have no liability for the consequences of use of such information. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, Right to make changes — Nexperia reserves the right to make conveyance or implication of any license under any copyrights, patents or changes to information published in this document, including without other industrial or intellectual property rights. limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior Export control — This document as well as the item(s) described herein may to the publication hereof. be subject to export control regulations. Export might require a prior authorization from national authorities. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 9.4 Trademarks malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental Notice: All referenced brands, product names, service names and trademarks damage. Nexperia accepts no liability for inclusion and/or use of are the property of their respective owners. Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com PSMN4R3-30PL_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 16 June 2009 12 of 13

PSMN4R3-30PL Nexperia N-channel 30 V 4.3 mΩ logic level MOSFET 11. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline. . . . . . . . . . . . . . . . . . . . . . . . .10 8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 10 Contact information. . . . . . . . . . . . . . . . . . . . . .12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 16 June 2009