PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High reliability Power SO8 package,  Ultra low QG, QGD and QOSS for high qualified to 175°C system efficiencies at low and high loads  Optimised for 4.5V Gate drive utilising NextPower Superjunction technology  Ultra low Rdson and low parasitic inductance 1.3 Applications  DC-to-DC converters  Power OR-ing  Lithium-ion battery protection  Server power supplies  Load switching  Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25°C≤T ≤175°C - - 25 V DS j I drain current T =25°C; see Figure 1 [1] - - 100 A D mb P total power dissipation T =25°C; see Figure 2 - - 272 W tot mb T junction temperature -55 - 175 °C j Static characteristics R drain-source on-state V =4.5V; I =25A; - 0.95 1.25 mΩ DSon GS D resistance T =25°C; see Figure 12 j V =10V; I =25A; - 0.75 0.99 mΩ GS D T =25°C; see Figure 12 j

PSMN0R9-25YLC Nexperia N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =4.5V; I =25A; - 14 - nC GD GS D V =12V; see Figure 14; DS see Figure 15 Q total gate charge V =4.5V; I =25A; - 51 - nC G(tot) GS D V =12V; see Figure 15; DS see Figure 14 [1] Continuous current is limited by package 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source 3 S source G 4 G gate mb D mounting base; connected to drain mbb076 S 1 2 3 4 SOT669 (LFPAK; Power-SO8) 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version PSMN0R9-25YLC LFPAK; Power-SO8 plastic single-ended surface-mounted package; 4 leads SOT669 PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 4 July 2011 2 of 15

PSMN0R9-25YLC Nexperia N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology 4. Limiting values Table 4. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25°C≤T ≤175°C - 25 V DS j V drain-gate voltage 25°C≤T ≤175°C; R =20kΩ - 25 V DGR j GS V gate-source voltage -20 20 V GS I drain current T =25°C; see Figure 1 [1] - 100 A D mb T =100°C; see Figure 1 [1] - 100 A mb I peak drain current pulsed; t ≤10µs; T =25°C; - 1563 A DM p mb see Figure 4 P total power dissipation T =25°C; see Figure 2 - 272 W tot mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j T peak soldering temperature - 260 °C sld(M) V electrostatic discharge voltage MM (JEDEC JESD22-A115) 920 - V ESD Source-drain diode I source current T =25°C [1] - 100 A S mb I peak source current pulsed; t ≤10µs; T =25°C - 1563 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V; T =25°C; I =100A; - 342 mJ DS(AL)S GS j(init) D avalanche energy V ≤25V; unclamped; R =50Ω; sup GS see Figure 3 [1] Continuous current is limited by package 003aaf 521 03na19 400 120 ID (A) Pder 320 (%) 80 240 160 40 (1) 80 0 0 0 50 100 150 200 0 50 100 150 200 Tmb (C) Tmb (°C) Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a mounting base temperature function of mounting base temperature PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 4 July 2011 3 of 15

PSMN0R9-25YLC Nexperia N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology 003aaf 535 103 IAL (A) (1) 102 (2) 10 1 10-1 10-3 10-2 10-1 1 10 tAL (ms) Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time 003aaf 522 104 ID (A) 103 Limit RDSon = VDS / ID tp =10 s 102 100 s DC 1 ms 10 10 ms 100 ms 1 10-1 10-1 1 10 102 VDS (V) Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 4 July 2011 4 of 15

PSMN0R9-25YLC Nexperia N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology 5. Thermal characteristics Table 5. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from junction to see Figure 5 - 0.45 0.55 K/W th(j-mb) mounting base 003aaf 523 1 Zth(j-mb)  = 0.5 (K/W) 10-1 0.2 0.1 0.05 10-2 0.02 P  = tTp single shot tp t T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 4 July 2011 5 of 15

PSMN0R9-25YLC Nexperia N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology 6. Characteristics Table 6. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source breakdown I =250µA; V =0V; T =25°C 25 - - V (BR)DSS D GS j voltage I =250µA; V =0V; T =-55°C 22.5 - - V D GS j V gate-source threshold voltage I =1mA; V =V ; T =25°C; 1.05 1.41 1.95 V GS(th) D DS GS j see Figure 10 I =1mA; V =V ; T =-55°C; - - 2.25 V D DS GS j see Figure 11 I =10mA; V =V ; T =150°C 0.5 - - V D DS GS j I drain leakage current V =25V; V =0V; T =25°C - - 1 µA DSS DS GS j V =25V; V =0V; T =150°C - - 100 µA DS GS j I gate leakage current V =16V; V =0V; T =25°C - - 100 nA GSS GS DS j V =-16V; V =0V; T =25°C - - 100 nA GS DS j R drain-source on-state V =4.5V; I =25A; T =25°C; - 0.95 1.25 mΩ DSon GS D j resistance see Figure 12 V =4.5V; I =25A; T =150°C; - - 2.125 mΩ GS D j see Figure 12; see Figure 13 V =10V; I =25A; T =25°C; - 0.75 0.99 mΩ GS D j see Figure 12 V =10V; I =25A; T =150°C; - - 1.68 mΩ GS D j see Figure 12; see Figure 13 R internal gate resistance (AC) f=1MHz - 1.1 2.2 Ω G Dynamic characteristics Q total gate charge I =25A; V =12V; V =10V; - 110 - nC G(tot) D DS GS see Figure 14; see Figure 15 I =25A; V =12V; V =4.5V; - 51 - nC D DS GS see Figure 15; see Figure 14 I =0A; V =0V; V =10V; - 104 - nC D DS GS see Figure 14 Q gate-source charge I =25A; V =12V; V =4.5V; - 14.8 - nC GS D DS GS see Figure 14; see Figure 15 Q pre-threshold gate-source - 10.5 - nC GS(th) charge Q post-threshold gate-source - 4.4 - nC GS(th-pl) charge Q gate-drain charge - 14 - nC GD V gate-source plateau voltage I =25A; V =12V; seeF igure 14; - 2.4 - V GS(pl) D DS see Figure 15 C input capacitance V =12V; V =0V; f=1MHz; - 6775 - pF iss DS GS T =25°C; see Figure 16 C output capacitance j - 1437 - pF oss C reverse transfer capacitance - 573 - pF rss PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 4 July 2011 6 of 15

PSMN0R9-25YLC Nexperia N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit t turn-on delay time V =12V; R =0.5Ω; V =4.5V; - 42.5 - ns d(on) DS L GS R =4.7Ω t rise time G(ext) - 74 - ns r t turn-off delay time - 103.5 - ns d(off) t fall time - 55 - ns f Q output charge V =0V; V =12V; f=1MHz; - 31.57 - nC oss GS DS T =25°C j Source-drain diode V source-drain voltage I =25A; V =0V; T =25°C; - 0.8 1.1 V SD S GS j see Figure 17 t reverse recovery time I =25A; dI /dt=-100A/µs; - 48 - ns rr S S V =0V; V =12V Q recovered charge GS DS - 60 - nC r t reverse recovery rise time V =0V; I 25A; - 26.3 - ns a GS S dI /dt=-100A/µs; V =12V; S DS see Figure 18 t reverse recovery fall time V =0V; I =25A; - 21.7 - ns b GS S dI /dt=-100A/µs; V =12V; S DS see Figure 18 003aaf 524 003aaf 525 100 8 ID 10 2.8 2.6 RDSon (A) 3.0 (m) 80 4.5 6 60 2.4 4 40 VGS (V) = 2.2 2 20 0 0 0 0.25 0.5 0.75 1 0 4 8 12 16 VDS (V) VGS (V) Fig 6. Output characteristics; drain current as a Fig 7. Drain-source on-state resistance as a function function of drain-source voltage; typical values of gate-source voltage; typical values PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 4 July 2011 7 of 15

PSMN0R9-25YLC Nexperia N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology 003aaf 530 003aaf 532 300 100 gfs (IAD) (S) 75 200 50 100 25 Tj = 150 (cid:31)C Tj = 25 (cid:31)C 0 0 0 25 50 75 100 0 1 2 3 4 ID (A) VGS (V) Fig 8. Forward transconductance as a function of Fig 9. Transfer characteristics; drain current as a drain current; typical values function of gate-source voltage; typical values 003aaf 529 003aaf 528 10-1 3 ID (A) VGS(th) 10-2 (V) Max (1mA) ID = 5mA 2 Min Typ Max 10-3 1mA 10-4 1 Min (5mA) 10-5 10-6 0 0 1 2 3 -60 0 60 120 180 VGS (V) Tj ((cid:31)C) Fig 10. Sub-threshold drain current as a function of Fig 11. Gate-source threshold voltage as a function of gate-source voltage junction temperature PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 4 July 2011 8 of 15

PSMN0R9-25YLC Nexperia N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology 003aaf 526 003aaf 527 5 2 RDSon 2.4 2.6 a (m) 4 VGS=4.5V 1.5 3 VGS (V) = 2.8 10V 1 2 3.0 3.5 0.5 1 10 4.5 0 0 0 25 50 75 100 -60 0 60 120 180 ID (A) Tj ((cid:31)C) Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance of drain current; typical values factor as a function of junction temperature 003aaf 533 10 VDS VGS (V) ID 8 VGS(pl) 5V 6 VGS(th) VGS 4 VDS = 20V 12V QGS1 QGS2 QGS QGD 2 QG(tot) 003aaa508 0 0 30 60 90 120 QG (nC) Fig 14. Gate charge waveform definitions Fig 15. Gate-source voltage as a function of gate charge; typical values PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 4 July 2011 9 of 15

PSMN0R9-25YLC Nexperia N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology 003aaf 531 003aaf 534 104 100 Ciss IS (A) C (pF) 75 103 Coss 50 Crss 25 Tj = 150 (cid:31)C Tj = 25 (cid:31)C 102 0 10-1 1 10 102 0 0.3 0.6 0.9 1.2 VDS (V) VSD (V) Fig 16. Input, output and reverse transfer capacitances Fig 17. Source current as a function of source-drain as a function of drain-source voltage; typical voltage; typical values values 003aaf 444 ID (A) trr ta tb 0 0.25 IRM IRM t (s) Fig 18. Reverse recovery timing definition PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 4 July 2011 10 of 15

PSMN0R9-25YLC Nexperia N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology 7. Package outline Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads SOT669 A2 E A C b2 c2 E1 L1 b3 mounting base b4 D1 H D L2 1 2 3 4 X e b w M A c 1/2 e A (A 3 ) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 A2 A3 b b2 b3 b4 c c2 D(1) Dm1a(1x) E(1) E1(1) e H L L1 L2 w y θ 1.20 0.15 1.10 0.50 4.41 2.2 0.9 0.25 0.30 4.10 5.0 3.3 6.2 0.85 1.3 1.3 8° mm 0.25 4.20 1.27 0.25 0.1 1.01 0.00 0.95 0.35 3.62 2.0 0.7 0.19 0.24 3.80 4.8 3.1 5.8 0.40 0.8 0.8 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 06-03-16 SOT669 MO-235 11-03-25 Fig 19. Package outline SOT669 (LFPAK; Power-SO8) PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 4 July 2011 11 of 15

PSMN0R9-25YLC Nexperia N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology 8. Revision history Table 7. Revision his tory Document ID Release date Data sheet status Change notice Supersedes PSMN0R9-25YLC v.2 20110704 Product data sheet - PSMN0R9-25YLC v.1 Modifications: • Various changes to content. PSMN0R9-25YLC v.1 20101202 Product data sheet - - PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 4 July 2011 12 of 15

PSMN0R9-25YLC Nexperia N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without Preview — The document is a preview version only. The document is still limitation specifications and product descriptions, at any time and without subject to formal approval, which may result in modifications or additions. notice. This document supersedes and replaces all information supplied prior Nexperia does not give any representations or warranties as to to the publication hereof. the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or Draft — The document is a draft version only. The content is still under safety-critical systems or equipment, nor in applications where failure or internal review and subject to formal approval, which may result in malfunction of a Nexperia product can reasonably be expected modifications or additions. Nexperia does not give any to result in personal injury, death or severe property or environmental representations or warranties as to the accuracy or completeness of damage. Nexperia accepts no liability for inclusion and/or use of information included herein and shall have no liability for the consequences of Nexperia products in such equipment or applications and use of such information. therefore such inclusion and/or use is at the customer’s own risk. Short data sheet — A short data sheet is an extract from a full data sheet Quick reference data — The Quick reference data is an extract of the with the same product type number(s) and title. A short data sheet is intended product data given in the Limiting values and Characteristics sections of this for quick reference only and should not be relied upon to contain detailed and document, and as such is not complete, exhaustive or legally binding. full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales Applications — Applications that are described herein for any of these office. In case of any inconsistency or conflict with the short data sheet, the products are for illustrative purposes only. Nexperia makes no full data sheet shall prevail. representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Customers are responsible for the design and operation of their applications Nexperia and its customer, unless Nexperia and and products using Nexperia products, and Nexperia customer have explicitly agreed otherwise in writing. In no event however, accepts no liability for any assistance with applications or customer product shall an agreement be valid in which the Nexperia product is design. It is customer’s sole responsibility to determine whether the Nexperia deemed to offer functions and qualities beyond those described in the product is suitable and fit for the customer’s applications and Product data sheet. products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their 9.3 Disclaimers applications and products. Limited warranty and liability — Information in this document is believed to Nexperia does not accept any liability related to any default, be accurate and reliable. However, Nexperia does not give any damage, costs or problem which is based on any weakness or default in the representations or warranties, expressed or implied, as to the accuracy or customer’s applications or products, or the application or use by customer’s completeness of such information and shall have no liability for the third party customer(s). Customer is responsible for doing all necessary consequences of use of such information. testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and In no event shall Nexperia be liable for any indirect, incidental, the products or of the application or use by customer’s third party punitive, special or consequential damages (including - without limitation - lost customer(s). Nexperia does not accept any liability in this respect. profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such Limiting values — Stress above one or more limiting values (as defined in damages are based on tort (including negligence), warranty, breach of the Absolute Maximum Ratings System of IEC 60134) will cause permanent contract or any other legal theory. damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in Notwithstanding any damages that customer might incur for any reason the Recommended operating conditions section (if present) or the whatsoever, Nexperia’s aggregate and cumulative liability towards Characteristics sections of this document is not warranted. Constant or customer for the products described herein shall be limited in accordance repeated exposure to limiting values will permanently and irreversibly affect with the Terms and conditions of commercial sale of Nexperia. the quality and reliability of the device. PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 4 July 2011 13 of 15

PSMN0R9-25YLC Nexperia N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Terms and conditions of commercial sale — Nexperia In the event that customer uses the product for design-in and use in products are sold subject to the general terms and conditions of commercial automotive applications to automotive specifications and standards, customer sale, as published at http://www.nexperia.com/profile/terms, unless otherwise (a) shall use the product without Nexperia’s warranty of the agreed in a valid written individual agreement. In case an individual product for such automotive applications, use and specifications, and (b) agreement is concluded only the terms and conditions of the respective whenever customer uses the product for automotive applications beyond agreement shall apply. Nexperia hereby expressly objects to Nexperia’s specifications such use shall be solely at customer’s applying the customer’s general terms and conditions with regard to the own risk, and (c) customer fully indemnifies Nexperia for any purchase of Nexperia products by customer. liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s No offer to sell or license — Nothing in this document may be interpreted or standard warranty and Nexperia’s product specifications. construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or 9.4 Trademarks other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may Notice: All referenced brands, product names, service names and trademarks be subject to export control regulations. Export might require a prior are the property of their respective owners. authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 4 July 2011 14 of 15

PSMN0R9-25YLC Nexperia N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology 11. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 Package outline. . . . . . . . . . . . . . . . . . . . . . . . .11 8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 10 Contact information. . . . . . . . . . . . . . . . . . . . . .14 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 04 July 2011