Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

PSMN027-100XS TO-220F N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) Rev. 2 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching  Isolated package and conduction losses  Suitable for standard level gate drive 1.3 Applications  AC-to-DC power supply equipment  Server power supplies  Motor control  Synchronous rectification 1.4 Quick reference data Table 1. Quick refere nce data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥25°C; T ≤175°C - - 100 V DS j j I drain current T =25°C; V =10V; see Figure 1 - - 23.4 A D mb GS P total power dissipation T =25°C; see Figure 2 - - 41.1 W tot mb Static characteristics R drain-source on-state resistance V =10V; I =5A; T =25°C; - 21 26.8 mΩ DSon GS D j see Figure 12; see Figure 13 Dynamic characteristics Q gate-drain charge V =10V; I =5A; V =50V; - 9.5 - nC GD GS D DS see Figure 14; see Figure 15 Q total gate charge - 30 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V; T =25°C; I =23.4A; - - 69 mJ DS(AL)S GS j(init) D avalanche energy V ≤100V; unclamped; R =50Ω; sup GS see Figure 3

PSMN027-100XS NXP Semiconductors N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3 S source G mb mounting base; isolated mbb076 S 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version PSMN027-100XS TO-220F plastic single-ended package; isolated heatsink mounted; SOT186A 1 mounting hole; 3-lead TO-220 "full pack" PSMN027-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 6 March 2012 2 of 15

PSMN027-100XS NXP Semiconductors N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) 4. Limiting values Table 4. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥25°C; T ≤175°C - 100 V DS j j V drain-gate voltage T ≥25°C; T ≤175°C; R =20kΩ - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V; T =25°C; see Figure 1 - 23.4 A D GS mb V =10V; T =100°C; see Figure 1 - 16.5 A GS mb I peak drain current pulsed; t ≤10µs; T =25°C; see Figure 4 - 93.6 A DM p mb P total power dissipation T =25°C; see Figure 2 - 41.1 W tot mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j T peak soldering temperature - 260 °C sld(M) Source-drain diode I source current T =25°C - 34.2 A S mb I peak source current pulsed; t ≤10µs; T =25°C - 93.6 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V; T =25°C; I =23.4A; - 69 mJ DS(AL)S GS j(init) D avalanche energy V ≤100V; unclamped; R =50Ω; sup GS see Figure 3 003aag628 03aa16 30 120 ID Pder (A) (%) 20 80 10 40 0 0 0 50 100 150 200 0 50 100 150 200 Tmb (°C) Tmb (°C) Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a mounting base temperature function of mounting base temperature PSMN027-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 6 March 2012 3 of 15

PSMN027-100XS NXP Semiconductors N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) 102 003aag629 I AL (A) 10 (1) 1 (2) 10-1 10-3 10-2 10-1 1 10 t (ms) AL Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time 103 003aag630 I D (A) 102 Limit R = V / I DSon DS D t =10 μs p 10 100 μs DC 1 1 ms 10 ms 100 ms 10-1 1 10 102 103 V (V) DS Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN027-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 6 March 2012 4 of 15

PSMN027-100XS NXP Semiconductors N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) 5. Thermal characteristics Table 5. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from junction to mounting base see Figure 5 - 3.4 3.65 K/W th(j-mb) R thermal resistance from junction to ambient vertical in free air - 55 - K/W th(j-a) 003aag631 10 Z th(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 0.02 P δ = tp T single shot 10-2 tp t T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 10 t (s) 102 p Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 6. Isolation characteristics Table 6. Isolation cha racteristics Symbol Parameter Conditions Min Typ Max Unit C isolation capacitance [1] - 10 - pF isol V RMS isolation voltage 50Hz≤f≤60Hz; RH≤65%; sinusoidal - - 2500 V isol(RMS) waveform; clean and dust free [1] f = 1 MHz PSMN027-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 6 March 2012 5 of 15

PSMN027-100XS NXP Semiconductors N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) 7. Characteristics Table 7. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source breakdown voltage I =250µA; V =0V; T =25°C 100 - - V (BR)DSS D GS j I =250µA; V =0V; T =-55°C 90 - - V D GS j V gate-source threshold voltage I =1mA; V =V ; T =25°C; 2 3 4 V GS(th) D DS GS j see Figure 10; see Figure 11 I =1mA; V =V ; T =175°C; 1 - - V D DS GS j see Figure 10 I =1mA; V =V ; T =-55°C; - - 4.6 V D DS GS j see Figure 10 I drain leakage current V =100V; V =0V; T =25°C - - 2 µA DSS DS GS j V =100V; V =0V; T =100°C - - 40 µA DS GS j I gate leakage current V =20V; V =0V; T =25°C - 2 100 nA GSS GS DS j V =-20V; V =0V; T =25°C - 2 100 nA GS DS j R drain-source on-state resistance V =10V; I =5A; T =25°C; - 21 26.8 mΩ DSon GS D j see Figure 12; see Figure 13 V =10V; I =5A; T =100°C; - 36.8 46.9 mΩ GS D j see Figure 13 V =10V; I =5A; T =175°C; - 58.8 75 mΩ GS D j see Figure 13 R internal gate resistance (AC) f=1MHz - 0.92 - Ω G Dynamic characteristics Q total gate charge I =5A; V =50V; V =10V; - 30 - nC G(tot) D DS GS see Figure 14; see Figure 15 Q gate-source charge - 6.5 - nC GS Q pre-threshold gate-source - 4.5 - nC GS(th) charge Q post-threshold gate-source - 2 - nC GS(th-pl) charge Q gate-drain charge - 9.5 - nC GD V gate-source plateau voltage I =5A; V =50V; see Figure 14; - 4.4 - V GS(pl) D DS see Figure 15 C input capacitance V =50V; V =0V; f=1MHz; - 1624 - pF iss DS GS T =25°C; see Figure 16; j see Figure 17 C output capacitance V =50V; V =0V; f=1MHz; - 115 - pF oss DS GS T =25°C; see Figure 17 j C reverse transfer capacitance V =50V; V =0V; f=1MHz; - 74 - pF rss DS GS T =25°C; see Figure 16; j see Figure 17 t turn-on delay time V =50V; R =10Ω; V =10V; - 12 - ns d(on) DS L GS R =4.7Ω; T =25°C t rise time G(ext) j - 8.5 - ns r t turn-off delay time - 25 - ns d(off) t fall time - 9.5 - ns f PSMN027-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 6 March 2012 6 of 15

PSMN027-100XS NXP Semiconductors N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) Table 7. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Source-drain diode V source-drain voltage I =10A; V =0V; T =25°C; - 0.82 1.2 V SD S GS j see Figure 18 t reverse recovery time I =10A; dI /dt=-100A/µs; - 42 - ns rr S S V =0V; V =50V Q recovered charge GS DS - 73 - nC r 003aag632 003aag633 100 100 ID VGS (V) = 10 RDSon (A) 7.0 (mΩ) 80 80 6.0 60 60 40 5.5 40 20 5.0 20 4.8 4.6 4.4 0 0 0 1 2 3 4 5 4 8 12 16 20 V (V) V (V) DS GS Fig 6. Output characteristics; drain current as a Fig 7. Drain-source on-state resistance as a function function of drain-source voltage; typical values of gate-source voltage; typical values 003aag634 003aag636 60 60 g fs (S) I D 50 (A) 40 40 30 20 20 T = 175 °C T = 25 °C j j 10 0 0 0 20 40 60 80 100 0 2 4 6 8 I (A) V (V) D GS Fig 8. Forward transconductance as a function of Fig 9. Transfer characteristics; drain current as a drain current; typical values function of gate-source voltage; typical values PSMN027-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 6 March 2012 7 of 15

PSMN027-100XS NXP Semiconductors N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) 5 003aad280 10−1 03aa35 VGS(th) ID (V) (A) 4 10−2 min typ max max 3 10−3 typ 2 min 10−4 1 10−5 0 10−6 −60 0 60 120 180 0 2 4 6 Tj (°C) VGS (V) Fig 10. Gate-source threshold voltage as a function of Fig 11. Sub-threshold drain current as a function of junction temperature gate-source voltage 003aag637 003aag654 80 3 R 5.0 5.5 6.0 a DSon (mΩ) 2.5 60 7.0 2 40 1.5 V (V) = 10 1 GS 20 0.5 0 0 0 20 40 60 80 100 -60 0 60 120 180 ID (A) Tj (°C) Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance of drain current; typical values factor as a function of junction temperature PSMN027-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 6 March 2012 8 of 15

PSMN027-100XS NXP Semiconductors N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) 003aag638 10 VDS V GS (V) 80V ID 8 50V VGS(pl) VDS = 20V 6 VGS(th) VGS 4 QGS1 QGS2 QGS QGD 2 QG(tot) 003aaa508 0 0 10 20 30 40 Q (nC) G Fig 14. Gate charge waveform definitions Fig 15. Gate-source voltage as a function of gate charge; typical values 003aag639 003aag647 104 3000 C C (pF) (pF) C C iss iss 103 2000 102 Coss 1000 C rss C rss 10 0 10-1 1 10 102 0 3 6 9 12 V (V) V (V) DS GS Fig 16. Input, output and reverse transfer capacitances Fig 17. Input and reverse transfer capacitances as a as a function of drain-source voltage; typical function of gate-source voltage, typical values values PSMN027-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 6 March 2012 9 of 15

PSMN027-100XS NXP Semiconductors N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) 003aag640 100 I S (A) 80 60 40 T = 175 °C T = 25 °C j j 20 0 0 0.3 0.6 0.9 1.2 1.5 V (V) SD Fig 18. Source current as a function of source-drain voltage; typical values PSMN027-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 6 March 2012 10 of 15

PSMN027-100XS NXP Semiconductors N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A P A1 q D1 mounting T base D j L2 L1 K Q b1 L b2 1 2 3 b w M c e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D D1 E e e1 j K L L1 L2(1) P Q q T(2) w max. mm 4.6 2.9 0.9 1.1 1.4 0.7 15.8 6.5 10.3 2.54 5.08 2.7 0.6 14.4 3.30 3 3.2 2.6 3.0 2.5 0.4 4.0 2.5 0.7 0.9 1.0 0.4 15.2 6.3 9.7 1.7 0.4 13.5 2.79 3.0 2.3 2.6 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 02-04-09 SOT186A 3-lead TO-220F 06-02-14 Fig 19. Package outline SOT186A (TO-220F) PSMN027-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 6 March 2012 11 of 15

PSMN027-100XS NXP Semiconductors N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) 9. Revision history Table 8. Revision his tory Document ID Release date Data sheet status Change notice Supersedes PSMN027-100XS v.2 20120306 Product data sheet - PSMN027-100XS v.1 Modifications: • Status changed from preliminary to product. • Various changes to content. PSMN027-100XS v.1 20110926 Preliminary data sheet - - PSMN027-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 6 March 2012 12 of 15

PSMN027-100XS NXP Semiconductors N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) 10. Legal information 10.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 10.2 Definitions Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without Preview — The document is a preview version only. The document is still limitation specifications and product descriptions, at any time and without subject to formal approval, which may result in modifications or additions. notice. This document supersedes and replaces all information supplied prior NXP Semiconductors does not give any representations or warranties as to to the publication hereof. the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or Draft — The document is a draft version only. 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Customer is responsible for doing all necessary responsibility for the content in this document if provided by an information testing for the customer’s applications and products using NXP source outside of NXP Semiconductors. Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party In no event shall NXP Semiconductors be liable for any indirect, incidental, customer(s). NXP does not accept any liability in this respect. punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or Limiting values — Stress above one or more limiting values (as defined in replacement of any products or rework charges) whether or not such the Absolute Maximum Ratings System of IEC 60134) will cause permanent damages are based on tort (including negligence), warranty, breach of damage to the device. Limiting values are stress ratings only and (proper) contract or any other legal theory. operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Notwithstanding any damages that customer might incur for any reason Characteristics sections of this document is not warranted. Constant or whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards repeated exposure to limiting values will permanently and irreversibly affect customer for the products described herein shall be limited in accordance the quality and reliability of the device. with theTerms and conditions of commercial sale of NXP Semiconductors. PSMN027-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 6 March 2012 13 of 15

PSMN027-100XS NXP Semiconductors N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) Terms and conditions of commercial sale — NXP Semiconductors product for such automotive applications, use and specifications, and (b) products are sold subject to the general terms and conditions of commercial whenever customer uses the product for automotive applications beyond sale, as published athttp://www.nxp.com/profile/terms, unless otherwise NXP Semiconductors’ specifications such use shall be solely at customer’s agreed in a valid written individual agreement. In case an individual own risk, and (c) customer fully indemnifies NXP Semiconductors for any agreement is concluded only the terms and conditions of the respective liability, damages or failed product claims resulting from customer design and agreement shall apply. NXP Semiconductors hereby expressly objects to use of the product for automotive applications beyond NXP Semiconductors’ applying the customer’s general terms and conditions with regard to the standard warranty and NXP Semiconductors’ product specifications. purchase of NXP Semiconductors products by customer. Translations — A non-English (translated) version of a document is for No offer to sell or license — Nothing in this document may be interpreted or reference only. The English version shall prevail in case of any discrepancy construed as an offer to sell products that is open for acceptance or the grant, between the translated and English versions. conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 10.4 Trademarks Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior Notice: All referenced brands, product names, service names and trademarks authorization from competent authorities. are the property of their respective owners. Non-automotive qualified products — Unless this data sheet expressly Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G states that this specific NXP Semiconductors product is automotive qualified, reenChip,HiPerSmart,HITAG,I²C-bus the product is not suitable for automotive use. It is neither qualified nor tested logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE in accordance with automotive testing or application requirements. NXP Ultralight,MoReUse,QLPAK,Silicon Semiconductors accepts no liability for inclusion and/or use of Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia non-automotive qualified products in automotive equipment or applications. andUCODE — are trademarks of NXP B.V. In the event that customer uses the product for design-in and use in HD Radio andHD Radio logo — are trademarks of iBiquity Digital automotive applications to automotive specifications and standards, customer Corporation. (a) shall use the product without NXP Semiconductors’ warranty of the 11. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com PSMN027-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 6 March 2012 14 of 15

PSMN027-100XS NXP Semiconductors N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) 12. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 Isolation characteristics . . . . . . . . . . . . . . . . . . .5 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6 8 Package outline. . . . . . . . . . . . . . . . . . . . . . . . .11 9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 11 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 6 March 2012 Document identifier: PSMN027-100XS