PSMN026-80YS N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits (cid:132) Advanced TrenchMOS provides low (cid:132) Improved mechanical and thermal RDSon and low gate charge characteristics (cid:132) High efficiency gains in switching (cid:132) LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications (cid:132) DC-to-DC converters (cid:132) Motor control (cid:132) Lithium-ion battery protection (cid:132) Server power supplies (cid:132) Load switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥25°C; T ≤175°C - - 80 V DS j j I drain current T =25°C; V =10V; - - 34 A D mb GS see Figure 1 P total power T =25°C; see Figure 2 - - 74 W tot mb dissipation T junction temperature -55 - 175 °C j Avalanche ruggedness E non-repetitive V =10V; T =25°C; - - 32 mJ DS(AL)S GS j(init) drain-source I =31A; V ≤80V; D sup avalanche energy R =50Ω; unclamped GS Dynamic characteristics Q gate-drain charge V =10V; I =25A; - 5 - nC GD GS D V =40V; see Figure 14; Q total gate charge DS - 20 - nC G(tot) see Figure 15

PSMN026-80YS Nexperia N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET Table 1. Quick reference …continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V; I =5A; - - 42 mΩ DSon GS D on-state resistance T =100°C; see Figure 12 j V =10V; I =5A; - 20 27.5 mΩ GS D T =25°C; see Figure 13 j 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source 3 S source G 4 G gate mb D mounting base; connected to mbb076 S drain 1 2 3 4 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version PSMN026-80YS LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 PSMN026-80YS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 25 June 2009 2 of 14

PSMN026-80YS Nexperia N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET 4. Limiting values Table 4. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥25°C; T ≤175°C - 80 V DS j j V drain-gate voltage T ≥25°C; T ≤175°C; R =20kΩ - 80 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V; T =100°C; see Figure 1 - 24 A D GS mb V =10V; T =25°C; see Figure 1 - 34 A GS mb I peak drain current t ≤10µs; pulsed; T =25°C; see Figure 3 - 137 A DM p mb P total power dissipation T =25°C; see Figure 2 - 74 W tot mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j T peak soldering - 260 °C sld(M) temperature Source-drain diode I source current T =25°C - 34 A S mb I peak source current t ≤10µs; pulsed; T =25°C - 137 A SM p mb Avalanche ruggedness E non-repetitive V =10V; T =25°C; I =31A; V ≤80V; - 32 mJ DS(AL)S GS j(init) D sup drain-source avalanche R =50Ω; unclamped GS energy 003aad282 03aa16 40 120 I D (A) Pder (%) 30 80 20 40 10 0 0 0 50 100 150 200 0 50 100 150 200 Tmb (°C) Tmb (°C) Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature PSMN026-80YS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 25 June 2009 3 of 14

PSMN026-80YS Nexperia N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET 103 003aad313 I D (A) Limit RDSon = VDS / ID 10μs 102 10 100μs 1 DC 1ms 10ms 10-1 100ms 10-2 1 10 102 103 V (V) DS Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN026-80YS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 25 June 2009 4 of 14

PSMN026-80YS Nexperia N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET 5. Thermal characteristics Table 5. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from junction to see Figure 4 - 1.4 2 K/W th(j-mb) mounting base 003aac558 10 Z th(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 0.05 P δ = Ttp 0.02 single shot tp t T 10-2 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN026-80YS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 25 June 2009 5 of 14

PSMN026-80YS Nexperia N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET 6. Characteristics Table 6. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I =250µA; V =0V; T =-55°C 73 - - V (BR)DSS D GS j breakdown voltage I =250µA; V =0V; T =25°C 80 - - V D GS j V gate-source threshold I =1mA; V = V ; T =175°C; 1 - - V GS(th) D DS GS j voltage see Figure 10; see Figure 11 I =1mA; V = V ; T =-55°C; - - 4.6 V D DS GS j see Figure 10; see Figure 11 I =1mA; V = V ; T =25°C; 2 3 4 V D DS GS j see Figure 10; see Figure 11 I drain leakage current V =80V; V =0V; T =25°C - - 1.5 µA DSS DS GS j V =80V; V =0V; T =125°C - - 10 µA DS GS j I gate leakage current V =-20V; V =0V; T =25°C - - 100 nA GSS GS DS j V =20V; V =0V; T =25°C - - 100 nA GS DS j R drain-source on-state V =10V; I =5A; T =175°C - - 66 mΩ DSon GS D j resistance V =10V; I =5A; T =100°C; - - 42 mΩ GS D j see Figure 12 V =10V; I =5A; T =25°C; - 20 27.5 mΩ GS D j see Figure 13 R internal gate resistance f=1MHz - 0.8 - Ω G (AC) Dynamic characteristics Q total gate charge I =0A; V =0V; V =10V - 17 - nC G(tot) D DS GS I =25A; V =40V; V =10V; - 20 - nC D DS GS see Figure 14; see Figure 15 Q gate-source charge I =25A; V =40V; V =10V; - 6.4 - nC GS D DS GS see Figure 15 Q pre-threshold I =25A; V =40V; V =10V; - 3.7 - nC GS(th) D DS GS gate-source charge see Figure 14 Q post-threshold - 2.7 - nC GS(th-pl) gate-source charge Q gate-drain charge I =25A; V =40V; V =10V; - 5 - nC GD D DS GS see Figure 14; see Figure 15 V gate-source plateau I =25A; V =40V - 5 - V GS(pl) D DS voltage C input capacitance V =40V; V =0V; f=1MHz; - 1200 - pF iss DS GS T =25°C; see Figure 16 C output capacitance j - 120 - pF oss C reverse transfer - 70 - pF rss capacitance t turn-on delay time V =40V; R =1.6Ω; V =10V; - 15 - ns d(on) DS L GS R =4.7Ω t rise time G(ext) - 6 - ns r t turn-off delay time - 26 - ns d(off) t fall time - 5 - ns f PSMN026-80YS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 25 June 2009 6 of 14

PSMN026-80YS Nexperia N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Source-drain diode V source-drain voltage I =5A; V =0V; T =25°C; - 0.8 1.2 V SD S GS j see Figure 17 t reverse recovery time I =15A; dI /dt=100A/µs; V =0V; - 36 - ns rr S S GS V =40V Q recovered charge DS - 52 - nC r [1] Tested to JEDEC standards where applicable. 003aad270 003aad276 80 2000 2010 ID 8 C (A) (pF) 6 C iss 60 1600 5.5 40 1200 5 C rss 20 800 V (V) = 4.5 GS 0 400 0 1 2 3 4 5 0 3 6 9 12 VDS (V) VGS (V) Fig 5. Output characteristics: drain current as a Fig 6. Input and reverse transfer capacitances as a function of drain-source voltage; typical values function of gate-source voltage; typical values 003aad272 003aad278 50 60 ID RDSon (A) (mΩ) 40 50 30 40 20 T = 150 °C j 30 10 Tj = 175 °C T = 25 °C j 0 20 0 2 4 6 4 8 12 16 20 VGS (V) VGS (V) Fig 7. Transfer characteristics: drain current as a Fig 8. Drain-source on-state resistance as a function function of gate-source voltage; typical values of gate-source voltage; typical values PSMN026-80YS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 25 June 2009 7 of 14

PSMN026-80YS Nexperia N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET 50 003aad277 10−1 03aa35 gfs ID (S) (A) 40 10−2 min typ max 30 10−3 20 10−4 10 10−5 0 10−6 0 20 40 60 0 2 4 6 ID (A) VGS (V) Fig 9. Forward transconductance as a function of Fig 10. Sub-threshold drain current as a function of drain current; typical values gate-source voltage 003aad280 003aad045 5 2.5 VGS(th) (V) a 4 2.0 max 3 1.5 typ 2 min 1.0 1 0.5 0 0.0 −60 0 60 120 180 -60 -30 0 30 60 90 120 150 180 Tj (°C) Tj (°C) Fig 11. Gate-source threshold voltage as a function of junction temperature Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature PSMN026-80YS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 25 June 2009 8 of 14

PSMN026-80YS Nexperia N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET 003aad271 60 R VDS DSon (mΩ) VGS (V) = 5 5.5 6 2010 50 ID 20 VGS(pl) 40 VGS(th) 30 VGS QGS1 QGS2 20 QGS QGD QG(tot) 003aaa508 10 Fig 14. Gate charge waveform definitions 0 20 40 60 80 ID (A) Fig 13. Drain-source on-state resistance as a function of drain current; typical values 10 003aad274 104 003aad275 V GS 16V (V) C 8 (pF) 64V 103 Ciss 6 VDS = 40V 4 C oss 102 C rss 2 0 10 0 5 10 15 20 25 10-1 1 10 102 QG (nC) VDS (V) Fig 15. Gate-source voltage as a function of gate Fig 16. Input, output and reverse transfer capacitances charge; typical values as a function of drain-source voltage; typical values PSMN026-80YS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 25 June 2009 9 of 14

PSMN026-80YS Nexperia N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET 003aad273 100 I S (A) 80 60 40 T = 150 °C j 20 T = 175 °C j T = 25 °C j 0 0 0.3 0.6 0.9 1.2 V (V) SD Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN026-80YS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 25 June 2009 10 of 14

PSMN026-80YS Nexperia N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 A2 E A C b2 c2 E1 L1 b3 mounting base b4 D1 H D L2 1 2 3 4 X e b w M A c 1/2 e A (A 3 ) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 A2 A3 b b2 b3 b4 c c2 D(1) Dm1a(1x) E(1) E1(1) e H L L1 L2 w y θ 1.20 0.15 1.10 0.50 4.41 2.2 0.9 0.25 0.30 4.10 5.0 3.3 6.2 0.85 1.3 1.3 8° mm 0.25 4.20 1.27 0.25 0.1 1.01 0.00 0.95 0.35 3.62 2.0 0.7 0.19 0.24 3.80 4.8 3.1 5.8 0.40 0.8 0.8 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-10-13 SOT669 MO-235 06-03-16 Fig 18. Package outline SOT669 (LFPAK) PSMN026-80YS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 25 June 2009 11 of 14

PSMN026-80YS Nexperia N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET 8. Revision history Table 7. Revision his tory Document ID Release date Data sheet status Change notice Supersedes PSMN026-80YS_1 20090625 Product data sheet - - PSMN026-80YS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 25 June 2009 12 of 14

PSMN026-80YS Nexperia N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no Draft — The document is a draft version only. The content is still under representation or warranty that such applications will be suitable for the internal review and subject to formal approval, which may result in specified use without further testing or modification. modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of Quick reference data — The Quick reference data is an extract of the information included herein and shall have no liability for the consequences of product data given in the Limiting values and Characteristics sections of this use of such information. document, and as such is not complete, exhaustive or legally binding. Short data sheet — A short data sheet is an extract from a full data sheet Limiting values — Stress above one or more limiting values (as defined in with the same product type number(s) and title. A short data sheet is intended the Absolute Maximum Ratings System of IEC 60134) may cause permanent for quick reference only and should not be relied upon to contain detailed and damage to the device. Limiting values are stress ratings only and operation of full information. For detailed and full information see the relevant full data the device at these or any other conditions above those given in the sheet, which is available on request via the local Nexperia sales Characteristics sections of this document is not implied. Exposure to limiting office. In case of any inconsistency or conflict with the short data sheet, the values for extended periods may affect device reliability. full data sheet shall prevail. Terms and conditions of sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published 9.3 Disclaimers at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless General — Information in this document is believed to be accurate and explicitly otherwise agreed to in writing by Nexperia. In case of reliable. However, Nexperia does not give any representations or any inconsistency or conflict between information in this document and such warranties, expressed or implied, as to the accuracy or completeness of such terms and conditions, the latter will prevail. information and shall have no liability for the consequences of use of such information. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, Right to make changes — Nexperia reserves the right to make conveyance or implication of any license under any copyrights, patents or changes to information published in this document, including without other industrial or intellectual property rights. limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior Export control — This document as well as the item(s) described herein may to the publication hereof. be subject to export control regulations. Export might require a prior authorization from national authorities. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 9.4 Trademarks malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental Notice: All referenced brands, product names, service names and trademarks damage. Nexperia accepts no liability for inclusion and/or use of are the property of their respective owners. Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com PSMN026-80YS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 25 June 2009 13 of 14

PSMN026-80YS Nexperia N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET 11. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 Package outline. . . . . . . . . . . . . . . . . . . . . . . . .11 8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 10 Contact information. . . . . . . . . . . . . . . . . . . . . .13 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 25 June 2009